M-SrFe12O19 and ferrihydrite-like ultrathin nanoplatelets as building blocks for permanent magnets: HAADF-STEM study and magnetic properties

Mixtures of M-type strontium hexaferrite (M-SrFe12O19) and ferrihydrite-like particles were prepared by a microwave-assisted hydrothermal process at 200 °C with heating rates in the range 40–50 °C min-1. The particles exhibited a platelet shape with a diameter comprised between 20 and 200 nm and a thickness between 2 and 5 nm. HAADF-STEM observations and EDS analysis were carried out for a better understanding of nucleation and growth process. EDS showed that most of the particles contained Sr and HAADF-STEM revealed that very thin particles with a hexaferrite core extending over less than a unit cell and with surface disorder crystallized along with well crystallized hexaferrite and defect free ferrihydrite particles. The symmetric multilayer structures (SRS) of the ultrathin particles suggested that the nucleation step of the hexaferrite particles involved clusters containing Sr atoms. In comparison with the M-SrFe12O19 micrometer sized platelets prepared with heating rate of 25 °C min-1, the mixtures of ultrathin hexaferrite- and ferrihydrite-like particles combined after annealing a higher coercivity reaching 465 kA m-1 thanks to the smaller initial particle size and a high magnetization reaching 65 A m2 kg-1 thanks to a limited amount of hematite

Landau mean-field analysis and estimation of the spontaneous magnetization from magnetic entropy change

We investigated the critical exponents for the compounds La1-x□xMnO3 (x = 0.1; 0.2 and 0.3) prepared by the sol–gel method. Our samples show a second- order transition inferred from the positive slope, in accordance with the Banerjee Criterion. Using the slope of different models on the TC, the relative slope (RS) was traced. From this perspective, the best models for the three samples prove to be the mean field and the tricritical mean field models. This model is characterized by critical exponents β, γ and δ which are determined by many methods such as MAP, KF method and critical isotherm analysis. The theoritical methods and experimental results were in good agreement for the three compounds. The universality class has been shown. After determining the spontaneous magnetization for x = 0.2 from (-ΔSM) vs. M2, we detected a good agreement with those obtained from the classical extrapolation of Arrott curves (µ0H/M vs. M2). Furthermore, based on the magnetocaloric effect (MCE), Landau’s theory is valid for the compound x = 0.2.publishe

Optical properties of an ensemble of G-centers in silicon

We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this point defect in silicon emitting in the telecommunication wavelength range, we unravel the recombination dynamics by time-resolved photoluminescence spectroscopy. More specifically, we performed detailed photoluminescence experiments as a function of excitation energy, incident power, irradiation fluence and temperature in order to study the impact of radiative and non-radiative recombination channels on the spectrum, yield and lifetime of G-centers. The sharp line emitting at 969 meV ($\sim$1280 nm) and the broad asymmetric sideband developing at lower energy share the same recombination dynamics as shown by time-resolved experiments performed selectively on each spectral component. This feature accounts for the common origin of the two emission bands which are unambiguously attributed to the zero-phonon line and to the corresponding phonon sideband. In the framework of the Huang-Rhys theory with non-perturbative calculations, we reach an estimation of 1.6$\pm$0.1 \angstrom for the spatial extension of the electronic wave function in the G-center. The radiative recombination time measured at low temperature lies in the 6 ns-range. The estimation of both radiative and non-radiative recombination rates as a function of temperature further demonstrate a constant radiative lifetime. Finally, although G-centers are shallow levels in silicon, we find a value of the Debye-Waller factor comparable to deep levels in wide-bandgap materials. Our results point out the potential of G-centers as a solid-state light source to be integrated into opto-electronic devices within a common silicon platform