Structural investigation of MOVPE-Grown GaAs on Ge by X-ray techniques

The selection of appropriate characterisation methodologies is vital for analysing and comprehending the sources of defects and their influence on the properties of heteroepitaxially grown III-V layers. In this work we investigate the structural properties of GaAs layers grown by Metal-Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates – (100) with 6⁰ offset towards – under various growth conditions. Synchrotron X-ray topography (SXRT) is employed to investigate the nature of extended linear defects formed in GaAs epilayers. Other X-ray techniques, such as reciprocal space mapping (RSM) and triple axis ω-scans of (00l)-reflections (l = 2, 4, 6) are used to quantify the degree of relaxation and presence of antiphase domains (APDs) in the GaAs crystals. The surface roughness is found to be closely related to the size of APDs formed at the GaAs/Ge heterointerface, as confirmed by X-ray diffraction (XRD), as well as atomic force microscopy (AFM), and transmission electron microscopy (TEM)

Multi-technique characterisation of MOVPE-grown GaAs on Si

The heterogeneous integration of III-V materials on a Si CMOS platform offers tremendous prospects for future high speed and low power logic applications. That said this integration generates immense scientific and technological challenges. In this work multi-technique characterisation is used to investigate properties of GaAs layers grown by Metal-Organic Vapour Phase Epitaxy (MOVPE) on Si substrates - (100) with 4⁰ offset towards - under various growth conditions. This being a crucial first step towards the production of III-V template layers with a relatively lower density of defects for selective epitaxial overgrowth of device quality material. The optical and structural properties of heteroepitaxial GaAs are first investigated by micro-Raman spectroscopy and photoluminescence and reflectance measurements. High-resolution X-ray diffraction (HR-XRD) is used to investigate structural properties. Advanced XRD techniques, including double-axis diffraction and X-ray crystallographic mapping are used to evaluate degrees of relaxation and distribution of the grain orientations in the epilayers, respectively. Results obtained from the different methodologies are compared in an attempt to understand growth kinetics of the materials system. The GaAs overlayer grown with annealing at 735⁰C following As predeposition at 500⁰C shows the best crystallinity. Close inspection confirms the growth of epitaxial GaAs preferentially oriented along (100) embedded in a highly-textured polycrystalline structure

Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on Germanium (100)

This work summarizes the observations made on the variation and time evolution of the reflectanceanisotropy signal during the MOVPE growth of GaInPnucleation layers on Germanium substrates. This in situ monitoring tool is used to assess the impact of different nucleation routines and reactor conditions on the quality of the layers grown. This comparison is carried out by establishing a correlation between reflectanceanisotropy signature at 2.1 eV and the morphology of the epilayers evaluated by atomic force microscopy (AFM). This paper outlines the potential of reflectanceanisotropy to predict, explore, and therefore optimize, the best growth conditions that lead to a high quality III–V epilayer on a Ge substrat

Structural investigation of MOVPE-Grown GaAs on Ge by X-ray techniques

The selection of appropriate characterisation methodologies is vital for analysing and comprehending the sources of defects and their influence on the properties of heteroepitaxially grown III-V layers. In this work we investigate the structural properties of GaAs layers grown by Metal-Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates – (100) with 6⁰ offset towards – under various growth conditions. Synchrotron X-ray topography (SXRT) is employed to investigate the nature of extended linear defects formed in GaAs epilayers. Other X-ray techniques, such as reciprocal space mapping (RSM) and triple axis ω-scans of (00l)-reflections (l = 2, 4, 6) are used to quantify the degree of relaxation and presence of antiphase domains (APDs) in the GaAs crystals. The surface roughness is found to be closely related to the size of APDs formed at the GaAs/Ge heterointerface, as confirmed by X-ray diffraction (XRD), as well as atomic force microscopy (AFM), and transmission electron microscopy (TEM)

Marginalization of end-use technologies in energy innovation for climate protection

Mitigating climate change requires directed innovation efforts to develop and deploy energy technologies. Innovation activities are directed towards the outcome of climate protection by public institutions, policies and resources that in turn shape market behaviour. We analyse diverse indicators of activity throughout the innovation system to assess these efforts. We find efficient end-use technologies contribute large potential emission reductions and provide higher social returns on investment than energy-supply technologies. Yet public institutions, policies and financial resources pervasively privilege energy-supply technologies. Directed innovation efforts are strikingly misaligned with the needs of an emissions-constrained world. Significantly greater effort is needed to develop the full potential of efficient end-use technologies

First narrow-band search for continuous gravitational waves from known pulsars in advanced detector data

Spinning neutron stars asymmetric with respect to their rotation axis are potential sources of continuous gravitational waves for ground-based interferometric detectors. In the case of known pulsars a fully coherent search, based on matched filtering, which uses the position and rotational parameters obtained from electromagnetic observations, can be carried out. Matched filtering maximizes the signalto- noise (SNR) ratio, but a large sensitivity loss is expected in case of even a very small mismatch between the assumed and the true signal parameters. For this reason, narrow-band analysis methods have been developed, allowing a fully coherent search for gravitational waves from known pulsars over a fraction of a hertz and several spin-down values. In this paper we describe a narrow-band search of 11 pulsars using data from Advanced LIGO’s first observing run. Although we have found several initial outliers, further studies show no significant evidence for the presence of a gravitational wave signal. Finally, we have placed upper limits on the signal strain amplitude lower than the spin-down limit for 5 of the 11 targets over the bands searched; in the case of J1813-1749 the spin-down limit has been beaten for the first time. For an additional 3 targets, the median upper limit across the search bands is below the spin-down limit. This is the most sensitive narrow-band search for continuous gravitational waves carried out so far

Key indicators to track current progress and future ambition of the Paris Agreement

Current emission pledges to the Paris Agreement appear insufficient to hold the global average temperature increase to well below 2 °C above pre-industrial levels. Yet, details are missing on how to track progress towards the â € Paris goal', inform the five-yearly â € global stocktake', and increase the ambition of Nationally Determined Contributions (NDCs). We develop a nested structure of key indicators to track progress through time. Global emissions track aggregated progress, country-level decompositions track emerging trends that link directly to NDCs, and technology diffusion indicates future reductions. We find the recent slowdown in global emissions growth is due to reduced growth in coal use since 2011, primarily in China and secondarily in the United States. The slowdown is projected to continue in 2016, with global CO 2 emissions from fossil fuels and industry similar to the 2015 level of 36 GtCO 2. Explosive and policy-driven growth in wind and solar has contributed to the global emissions slowdown, but has been less important than economic factors and energy efficiency. We show that many key indicators are currently broadly consistent with emission scenarios that keep temperatures below 2 °C, but the continued lack of large-scale carbon capture and storage threatens 2030 targets and the longer-term Paris ambition of net-zero emissions

Parental transfer of the antimicrobial protein LBP/BPI protects Biomphalaria glabrata eggs against oomycete infections

Copyright: © 2013 Baron et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited. Funding: This work was funded by ANR (ANR-07-BLAN-0214 and ANR-12-EMMA-00O7-01), CNRS and INRA. PvW was financially supported by the BBSRC. The funders had no role in study design, data collection and analysis, decision to publish, or preparation of the manuscript.Peer reviewedPublisher PD