InP integrated optical frequency comb generator using an amplified recirculating loop

A novel realisation of photonically integrated optical frequency comb generation is demonstrated on indium phosphide (InP) using a generic foundry platform. The architecture, based on the amplified recirculating loop technique, consists of cascaded electro-optic phase modulators embedded within a short waveguide loop. While an injected continuous wave laser signal is recirculated by the loop, the modulators are driven with a modulation frequency corresponding to the round-trip loop length frequency. This results in many phase coherent, evenly spaced optical comb lines being generated. The choice of InP as an integration platform allows immediate optical amplification of the modulated signal by embedded semiconductor optical amplifiers, enabling loop losses to be compensated and expanding the comb across broad optical bandwidths. This approach reduces the requirement for external, high-power optical amplifiers, improving the compactness and power efficiency of the full system. The system was modelled to identify off-resonance behaviour, outlining limits in matching both the modulation frequency and seed laser frequency to the round-trip loop frequency for optimal comb line generation to be achieved. The experimental device occupied a fraction of the 6 x 2 mm2 InP chip and operated at round-trip loop frequencies of 6.71 GHz to produce 59 comb lines within a 20 dB power envelope. All comb lines exhibited strong phase coherence as characterised by low composite phase noise measurements of -105 dBc/Hz at 100 kHz. A second device is also presented with a shorter loop length operating at ~10 GHz which generated 57 comb lines. Both loop configurations included short waveguide phase shifters providing a degree of tunability of the free spectral range with a tuning range of 150 MHz for small injection currents of less than 2.5 mA.This research work has been supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through the Integrated Photonics and Electronic Systems (IPES) Centre of Doctoral Training and PICSat project (EPSRC Reference: EP/S000976/1)

Pilot-tone assisted 16-QAM photonic wireless bridge operating at 250 GHz

A photonic wireless bridge operating at a carrier frequency of 250 GHz is proposed and demonstrated. To mitigate the phase noise of the free-running lasers present in such a link, the tone-assisted carrier recovery is used. Compared to the blind phase noise compensation (PNC) algorithm, this technique exhibited penalties of 0.15 dB and 0.46 dB when used with aggregated Lorentzian linewidths of 28 kHz and 359 kHz, respectively, and 20 GBd 16-quadrature amplitude modulation (QAM) signals. The wireless bridge is also demonstrated in a wavelength division multiplexing (WDM) scenario, where 5 optical channels are generated and sent to the Tx remote antenna unit (RAU). In this configuration, the full band from 224 GHz to 294 GHz is used. Finally, a 50 Gbit/s transmission is achieved with the proposed wireless bridge in single channel configuration. The wireless transmission distance is limited to 10 cm due to the low power emitted by the uni-travelling carrier photodiode used in the experiments. However, link budget calculations based on state-of-the-art THz technology show that distances >1000 m can be achieved with this approach.Comment: 13 pages, in Journal of Lightwave Technolog

High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy

The first waveguide coupled phosphide-based UTC photodiodes grown by Solid Source Molecular Beam Epitaxy (SSMBE) are reported in this paper. Metal Organic Vapour Phase Epitaxy (MOVPE) and Gas Source MBE (GSMBE) have long been the predominant growth techniques for the production of high quality InGaAsP materials. The use of SSMBE overcomes the major issue associated with the unintentional diffusion of zinc in MOVPE and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of GSMBE. The UTC epitaxial structure contains a 300 nm n-InP collection layer and a 300 nm n++-InGaAsP waveguide layer. UTC-PDs integrated with Coplanar Waveguides (CPW) exhibit 3 dB bandwidth greater than 65 GHz and output RF power of 1.1 dBm at 100 GHz. We also demonstrate accurate prediction of the absolute level of power radiated by our antenna integrated UTCs, between 200 GHz and 260 GHz, using 3d full-wave modelling and taking the UTC-to-antenna impedance match into account. Further, we present the first optical 3d full-wave modelling of waveguide UTCs, which provides a detailed insight into the coupling between a lensed optical fibre and the UTC chip.Comment: 19 pages, 24 figure

Monolithic quantum-dot distributed feedback laser array on silicon

Electrically-pumped lasers directly grown on silicon are key devices interfacing silicon microelectronics and photonics. We report here, for the first time, an electrically-pumped, room-temperature, continuous-wave (CW) and single-mode distributed feedback (DFB) laser array fabricated in InAs/GaAs quantum-dot (QD) gain material epitaxially grown on silicon. CW threshold currents as low as 12 mA and single-mode side mode suppression ratios (SMSRs) as high as 50 dB have been achieved from individual devices in the array. The laser array, compatible with state-of-the-art coarse wavelength division multiplexing (CWDM) systems, has a well-aligned channel spacing of 20 0.2 nm and exhibits a record wavelength coverage range of 100 nm, the full span of the O-band. These results indicate that, for the first time, the performance of lasers epitaxially grown on silicon is elevated to a point approaching real-world CWDM applications, demonstrating the great potential of this technology

Effects of phosphorous and antimony doping on thin Ge layers grown on Si

Suppression of threading dislocations (TDs) in thin germanium (Ge) layers grown on silicon (Si) substrates has been critical for realizing high-performance Si-based optoelectronic and electronic devices. An advanced growth strategy is desired to minimize the TD density within a thin Ge buffer layer in Ge-on-Si systems. In this work, we investigate the impact of P dopants in 500-nm thin Ge layers, with doping concentrations from 1 to 50 × 1018 cm−3. The introduction of P dopants has efficiently promoted TD reduction, whose potential mechanism has been explored by comparing it to the well-established Sb-doped Ge-on-Si system. P and Sb dopants reveal different defect-suppression mechanisms in Ge-on-Si samples, inspiring a novel co-doping technique by exploiting the advantages of both dopants. The surface TDD of the Ge buffer has been further reduced by the co-doping technique to the order of 107 cm−2 with a thin Ge layer (of only 500 nm), which could provide a high-quality platform for high-performance Si-based semiconductor devices

Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP

We demonstrate the generation of continuous wave terahertz (THz) frequency radiation from photomixers fabricated on both Fe-doped InGaAs and Fe-doped InGaAsP, grown by metal-organic chemical vapor deposition. The photomixers were excited using a pair of distributed Bragg reflector lasers with emission around 1550 nm, and THz radiation was emitted over a bandwidth of greater than 2.4 THz. Two InGaAs and four InGaAsP wafers with different Fe doping concentrations were investigated, with the InGaAsmaterial found to outperform the InGaAsP in terms of emitted THz power. The dependencies of the emitted power on the photomixer applied bias, incident laser power, and materialdoping level were also studied

Electrically pumped continuous-wave III–V quantum dot lasers on silicon

Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 A cm–2, a room-temperature output power exceeding 105 mW and operation up to 120 °C. Over 3,100 h of continuous-wave operating data have been collected, giving an extrapolated mean time to failure of over 100,158 h. The realization of high-performance quantum dot lasers on silicon is due to the achievement of a low density of threading dislocations on the order of 105 cm−2 in the III–V epilayers by combining a nucleation layer and dislocation filter layers with in situ thermal annealing. These results are a major advance towards reliable and cost-effective silicon-based photonic–electronic integration

The 2017 Terahertz Science and Technology Roadmap

Science and technologies based on terahertz frequency electromagnetic radiation (100GHz-30THz) have developed rapidly over the last 30 years. For most of the 20th century, terahertz radiation, then referred to as sub-millimeter wave or far-infrared radiation, was mainly utilized by astronomers and some spectroscopists. Following the development of laser based terahertz time-domain spectroscopy in the 1980s and 1990s the field of THz science and technology expanded rapidly, to the extent that it now touches many areas from fundamental science to “real world” applications. For example THz radiation is being used to optimize materials for new solar cells, and may also be a key technology for the next generation of airport security scanners. While the field was emerging it was possible to keep track of all new developments, however now the field has grown so much that it is increasingly difficult to follow the diverse range of new discoveries and applications that are appearing. At this point in time, when the field of THz science and technology is moving from an emerging to a more established and interdisciplinary field, it is apt to present a roadmap to help identify the breadth and future directions of the field. The aim of this roadmap is to present a snapshot of the present state of THz science and technology in 2016, and provide an opinion on the challenges and opportunities that the future holds. To be able to achieve this aim, we have invited a group of international experts to write 17 sections that cover most of the key areas of THz Science and Technology. We hope that The 2016 Roadmap on THz Science and Technology will prove to be a useful resource by providing a wide ranging introduction to the capabilities of THz radiation for those outside or just entering the field as well as providing perspective and breadth for those who are well established. We also feel that this review should serve as a useful guide for government and funding agencies

Coherent terahertz photonics

We present a review of recent developments in THz coherent systems based on photonic local oscillators. We show that such techniques can enable the creation of highly coherent, thus highly sensitive, systems for frequencies ranging from 100 GHz to 5 THz, within an energy efficient integrated platform. We suggest that such systems could enable the THz spectrum to realize its full applications potential. To demonstrate how photonics-enabled THz systems can be realized, we review the performance of key components, show recent demonstrations of integrated platforms, and give examples of applications