Le monde du tout petit, petit, petit, petit...

La concordance d’un certain nombre d’évolutions techniques et la rencontre des physiciens avec des chimistes et des biologistes ont permis la fabrication et l’observation d’objets de plus en plus petits pour se diriger vers l’infiniment petit. Exploration avec Alain Schuhl

Chiral damping of magnetic domain walls

Structural symmetry breaking in magnetic materials is responsible for a variety of outstanding physical phenomena. Examples range from the existence of multiferroics, to current induced spin orbit torques (SOT) and the formation of topological magnetic structures. In this letter we bring into light a novel effect of the structural inversion asymmetry (SIA): a chiral damping mechanism. This phenomenon is evidenced by measuring the field driven domain wall (DW) motion in perpendicularly magnetized asymmetric Pt/Co/Pt trilayers. The difficulty in evidencing the chiral damping is that the ensuing DW dynamics exhibit identical spatial symmetry to those expected from the Dzyaloshinskii-Moriya interaction (DMI). Despite this fundamental resemblance, the two scenarios are differentiated by their time reversal properties: while DMI is a conservative effect that can be modeled by an effective field, the chiral damping is purely dissipative and has no influence on the equilibrium magnetic texture. When the DW motion is modulated by an in-plane magnetic field, it reveals the structure of the internal fields experienced by the DWs, allowing to distinguish the physical mechanism. The observation of the chiral damping, not only enriches the spectrum of physical phenomena engendered by the SIA, but since it can coexists with DMI it is essential for conceiving DW and skyrmion devices

Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

International audienceModern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic writing remains the object of major research efforts. Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric fields and currents, the simple reversal of a high-coercivity, single-layer ferromagnet remains a challenge. Materials with large coercivity and perpendicular magnetic anisotropy represent the mainstay of data storage media, owing to their ability to retain a stable magnetization state over long periods of time and their amenability to miniaturization. However, the same anisotropy properties that make a material attractive for storage also make it hard to write to. Here we demonstrate switching of a perpendicularly magnetized cobalt dot driven by in-plane current injection at room temperature. Our device is composed of a thin cobalt layer with strong perpendicular anisotropy and Rashba interaction induced by asymmetric platinum and AlOx interface layers. The effective switching field is orthogonal to the direction of the magnetization and to the Rashba field. The symmetry of the switching field is consistent with the spin accumulation induced by the Rashba interaction and the spin-dependent mobility observed in non-magnetic semiconductors as well as with the torque induced by the spin Hall effect in the platinum layer. Our measurements indicate that the switching efficiency increases with the magnetic anisotropy of the cobalt layer and the oxidation of the aluminium layer, which is uppermost, suggesting that the Rashba interaction has a key role in the reversal mechanism. To prove the potential of in-plane current switching for spintronic applications, we construct a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures. This device is simple, scalable and compatible with present-day magnetic recording technolog

Cabbage and fermented vegetables : From death rate heterogeneity in countries to candidates for mitigation strategies of severe COVID-19

Large differences in COVID-19 death rates exist between countries and between regions of the same country. Some very low death rate countries such as Eastern Asia, Central Europe, or the Balkans have a common feature of eating large quantities of fermented foods. Although biases exist when examining ecological studies, fermented vegetables or cabbage have been associated with low death rates in European countries. SARS-CoV-2 binds to its receptor, the angiotensin-converting enzyme 2 (ACE2). As a result of SARS-CoV-2 binding, ACE2 downregulation enhances the angiotensin II receptor type 1 (AT(1)R) axis associated with oxidative stress. This leads to insulin resistance as well as lung and endothelial damage, two severe outcomes of COVID-19. The nuclear factor (erythroid-derived 2)-like 2 (Nrf2) is the most potent antioxidant in humans and can block in particular the AT(1)R axis. Cabbage contains precursors of sulforaphane, the most active natural activator of Nrf2. Fermented vegetables contain many lactobacilli, which are also potent Nrf2 activators. Three examples are: kimchi in Korea, westernized foods, and the slum paradox. It is proposed that fermented cabbage is a proof-of-concept of dietary manipulations that may enhance Nrf2-associated antioxidant effects, helpful in mitigating COVID-19 severity.Peer reviewe

Nrf2-interacting nutrients and COVID-19 : time for research to develop adaptation strategies

There are large between- and within-country variations in COVID-19 death rates. Some very low death rate settings such as Eastern Asia, Central Europe, the Balkans and Africa have a common feature of eating large quantities of fermented foods whose intake is associated with the activation of the Nrf2 (Nuclear factor (erythroid-derived 2)-like 2) anti-oxidant transcription factor. There are many Nrf2-interacting nutrients (berberine, curcumin, epigallocatechin gallate, genistein, quercetin, resveratrol, sulforaphane) that all act similarly to reduce insulin resistance, endothelial damage, lung injury and cytokine storm. They also act on the same mechanisms (mTOR: Mammalian target of rapamycin, PPAR gamma:Peroxisome proliferator-activated receptor, NF kappa B: Nuclear factor kappa B, ERK: Extracellular signal-regulated kinases and eIF2 alpha:Elongation initiation factor 2 alpha). They may as a result be important in mitigating the severity of COVID-19, acting through the endoplasmic reticulum stress or ACE-Angiotensin-II-AT(1)R axis (AT(1)R) pathway. Many Nrf2-interacting nutrients are also interacting with TRPA1 and/or TRPV1. Interestingly, geographical areas with very low COVID-19 mortality are those with the lowest prevalence of obesity (Sub-Saharan Africa and Asia). It is tempting to propose that Nrf2-interacting foods and nutrients can re-balance insulin resistance and have a significant effect on COVID-19 severity. It is therefore possible that the intake of these foods may restore an optimal natural balance for the Nrf2 pathway and may be of interest in the mitigation of COVID-19 severity

Transport dépendant du spin et couplage d'échange (de la jonction tunnel au capteur magnétique intégré)

Dans une première partie, les propriétés cristallographiques et magnétiques de couches minces X/IrMn et X/IrMn/Y (X,Y= Co et/ou Py) sont présentées. Le magnétisme est expliqué à l'aide de modèles micromagnétiques. La différence de couplage d'échange aux interfaces X/IrMn et IrMn/Y est indépendante de la microstructure et uniquement liée à l'ordre d'empilement des couches. Il est démontrer que déposer une couche antiferromagnétique sur une couche ferromagnétique est totalement différent d'un point de vue magnétique de l'opération inverse. Dans une seconde partie, la bicouche IrMn/Co est utilisée comme couche de détection dans une jonction tunnel magnétique pour réaliser un capteur de champ magnétique linéaire et réversible dans la gamme 50 et 50 Oe. Un choix judicieux des paramètres de la jonction tunnel a permis de rendre la sensibilité du capteur indépendante de la température. Sur cette base, un démonstrateur de capteur magnétique avec son électronique de traitement est réalisé.In a first part, the crystalline and magnetic properties of X/IrMn and X/IrMn/Y multilayers (X,Y= Co and/or Py) are studied. The magnetic properties are explained by the use of micromagnetic models. The exchange coupling difference for both interfaces X/IrMn and IrMn/Y is independent of the microstructure and is shown to be only linked to the stacking order. It is evidenced that depositing an antiferromagnetic layer on a ferromagnetic layer is completely different than the opposite case. In a second part, the IrMn/Co bilayer is used as a detection layer in a magnetic tunnel junction to build up a magnetic field sensor. The sensor output signal is linear and reversible in a field range +/-50 Oe. A clever choice of the junction parameters allowed us to make a temperature independent sensor sensitivity. On this basis, a demonstrator using this magnetic field sensor was realized with its complete electronic processing.NANCY1-SCD Sciences & Techniques (545782101) / SudocSudocFranceF

L'effet tunnel dépendant du spin comme sonde du micromagnétisme et du transport d'électrons chauds (application aux capteurs)

L'effet tunnel dépendant du spin dans les structures métal ferromagnétique/isolant/métal ferromagnétique fait l'objet de nombreuses études motivées par de multiples applications (capteurs de champ magnétique, mémoires vives magnétiques non volatiles, têtes de lecture, etc). La résistance de ces dispositifs est liée à l'orientation relative des aimantations de chacune des électrodes. Au cours de ce travail de thèse, l'extrême sensibilité de l'effet tunnel dépendant du spin à la configuration magnétique des électrodes a été utilisée à la fois comme une sonde du comportement micromagnétique des électrodes et pour réaliser des capteurs de champ magnétique. De plus, l'élaboration de doubles jonctions tunnel magnétiques à trois entrées a permis mettre en évidence la présence d'un courant d'électrons chauds qui pourrait être à la base d'un nouveau type de transistor magnétique.Studies of the spin dependent tunneling effect in ferromagnetic metal /insulating/ferromagnetic metal stacks are being actively pursued for their high application potential (magnetic sensors, random access memories, read heads ). The resistance of these devices is directly link to the relative orientation of the electrode magnetizations. The high sensitivity of spin dependent tunneling effect to the electrodes magnetic configuration has been used both as a probe for the micromagnetic behavior of the electrodes and to realize magnetic sensors. Moreover, double tunnel junctions with three terminals have been prepared. This 3-terminals device allowed us to evidence an hot electron current which is forecast to be on the base of a new kind of transistor.NANCY1-SCD Sciences & Techniques (545782101) / SudocSudocFranceF

Transport tunnel polarisé en spin dans le système épitaxié Fe/MgO/Fe (interactions magnétiques et symétries électroniques)

Les jonctions tunnel magnétiques monocristallines Fe(1 00)/MgO(1 00)/Fe(1 00) élaborées par Epitaxie par Jet Moléculaire sont des systèmes modèles pour la va1idation de concepts spécifiques au transport polarisé en ( spin dans les multicouches cristallines. L'analyse de la structure de bande montre que le Fe(100) apparaît comme un demi-métal au regard de la symétrie 01 : cette nouvelle notion de polarisation en terme de symétrie électronique explique les formidables effets magnétorésistifs prédits dans ce système. Nos résultats magnétorésistifs valident les effets de filtrage en symétrie et montrent l'influence de la structure électronique sur le transport dont les mécanismes dépassent le modèle des électrons libres. Parallèlement, la croissance bidimensionnelle du MgO a permis "élaboration de fines couches de MgO pour lesquelles nous avons fourni la première mise en évidence expérimentale d'une interaction antiferromagnétique entre deux couches magnétiques par effet tunnel polarisé en spin.Monocrystalline Fe(1 00)/MgO(1 00)/Fe(1 00) magnetic tunnel junctions (MT J), elaborated by Molecular Beam Epitaxy constitute ideal systems for validation of specific concepts related to the spin polarized transport in crystalline multilayers. The analysis of the band structure shows that the Fe(100) behaves as a half-metal with respect to the 01 electronic symmetry; this new concept of spin polarization/filtering in terms of symmetry being at the origin of huge magnetoresistive effects theoretically predicted in these systems. Our magnetotransport results validate the effects of electronic symmetry filtering. Moreover, they illustrate the influence of the electronic structure on tunnel transport, whose complex mechanisms go weil beyond the free- electron framework. The precise control of the bidimensional epitaxial growth of MgO allowed us the elaboration of extremely thin insulating barriers for which we provide a first experimental proof of magnetic coupling by spin polarized tunneling.NANCY-INPL-Bib. électronique (545479901) / SudocSudocFranceF

Jonctions tunnel magnétiques à aimantation perpendiculaire (anisotropie, magnétorésistance, couplages magnétiques et renversement par couple de transfert de spin)

Le but de cette thèse est l'étude des propriétés de jonctions tunnel magnétiques à aimantation perpendiculaire, en utilisant l'anisotropie perpendiculaire présente à l'interface entre un métal magnétique et un oxyde. En théorie, dans le cas des applications mémoires, les jonctions tunnel perpendiculaires devraient nécessiter moins d'énergie (courant) pour l'e criture par courant polarisé en spin. Mais la fabrication de telles structures représente un défi et une tâche difficile puisque les propriétés de transport (TMR) et d'anisotropie imposent des contraintes sur les matériaux utilisées en limitant la fenêtre de travail, notamment en ce qui concerne l'épaisseur des couches magnétiques. Pour atteindre cet objectif nous avons tout d'abord étudié les propriétés de ces structures comme l'anisotropie de l'interface métal magnétique-oxyde, le transport tunnel et le couplage entre les couches magnétiques à travers la barrière isolante. L'amplitude de l'anisotropie d'interface entre un métal magnétique et un oxyde dépend de l'épaisseur des couches magnétiques, de la température de recuit et la concentration de l'oxygène à l'interface. Différentes structures ont été réalisées afin de choisir la structure la mieux adaptée pour les applications mémoires MRAM. Une corrélation entre la TMR et l'anisotropie a été observée permettant de valider l'origine de l'anisotropie perpendiculaire : la formation de liaisons métal magnétique-oxygène. Un couplage antiferromagnétique à été aussi observé entre les couches magnétiques à anisotropie perpendiculaire à travers l'oxyde. Une étude détaillée sur le couplage a été faite en fonction de la température de recuit et de l'épaisseur des couches magnétiques pour mieux comprendre l'origine du couplage et une possible relation avec l'amplitude de l'anisotropie perpendiculaire. Finalement des jonctions perpendiculaires ont été nano-lithographiées et des mesures de commutation d'aimantation par transfert de spin sur des piliers nanométriques ont été réalisées avec de faibles courants critiques.The aim of this thesis is the study of magnetic tunnel junctions with perpendicularly magnetized electrodes (pMTJ), using perpendicular magnetic anisotropy (PMA) arising from the magnetic metal/oxide interfaces. For magnetic memories applications, it was predicted in theory that perpendicular junctions should need less energy (current) for spin transfer torque (STT) writing applications. However, the engineering of such structures is a real challenge and a difficult task since simultaneous transport (TMR) and PMA properties impose constraints on materials being used and also limit the working window of the device, especially in terms of magnetic layer thickness. In order to reach our goal we first studied different properties of these structures, such as the origin of PMA from the metal/oxide interface, tunnel transport and interlayer exchange coupling phenomena. The PMA at magnetic metal/oxide interface was showed to strongly depend on different parameters like annealing temperature, oxygen concentration, layer thickness etc. Several pMTJ structures were tested in order to choose the best one for MRAM memories applications. A correlation between TMR and PMA was observed and confirms the PMA origin from the magnetic metal-oxygen bond formation at the interface. Furthermore, antiferromagnetic interlayer exchange coupling was observed in our structures in the presence of out of plane anisotropy. A detailed study was made as a function of annealing temperature and layers thickness, in order to understand the origin of this coupling and its possible relationship to the anisotropy strength. Finally the STT-pMTJ concept was validated and low critical currents were observed on submicronic dots prepared by electron beam lithography.SAVOIE-SCD - Bib.électronique (730659901) / SudocGRENOBLE1/INP-Bib.électronique (384210012) / SudocGRENOBLE2/3-Bib.électronique (384219901) / SudocSudocFranceF