Electronic damage in quartz (c-SiO2) by MeV ion irradiations: Potentiality for optical waveguiding applications

The damage induced on quartz (c-SiO2) by heavy ions (F, O, Br) at MeV energies, where electronic stopping is dominant, has been investigated by RBS/C and optical methods. The two techniques indicate the formation of amorphous layers with an isotropic refractive index (n = 1.475) at fluences around 1014 cm−2 that are associated to electronic mechanisms. The kinetics of the process can be described as the superposition of linear (possibly initial Poisson curve) and sigmoidal (Avrami-type) contributions. The coexistence of the two kinetic regimes may be associated to the differential roles of the amorphous track cores and preamorphous halos. By using ions and energies whose maximum stopping power lies inside the crystal (O at 13 MeV, F at 15 MeV and F at 30 MeV) buried amorphous layer are formed and optical waveguides at the sample surface have been generated

Lattice preamorphization by ion irradiation: Fluence dependence of the electronic stopping power threshold for amorphization

A thermal-spike model has been applied to characterize the damage structure of the latent tracks generated by high-energy ion irradiations on LiNb O3 through electron excitation mechanisms. It applies to ions having electronic stopping powers both below and above the threshold value for lattice amorphization. The model allows to estimate the defect concentrations in the heavily damaged (preamorphized) regions that have not reached the threshold for amorphization. They include the halo and tail surrounding the core of a latent track. The existence of the preamorphized regions accounts for a synergy between successive irradiations and predicts a dependence of the amorphization threshold on previous irradiation fluence. The predicted dependence is in accordance with irradiation experiments using N (4.53 MeV), O (5.00 MeV), F (5.13 MeV), and Si (5 and 7.5 MeV). For electronic stopping powers above the threshold value the model describes the generation of homogeneous amorphous layers and predicts the propagation of the amorphization front with fluence. A theoretical expression, describing this propagation, has been obtained that is in reasonable agreement with silicon irradiation experiments at 5 and 7.5 MeV. The accordance is improved by including in a simple phenomenological way the velocity effect on the threshold. At the highest fluences (or depths) a significant discrepancy appears that may be attributed to the contribution of the nuclear collision damage. © 2005 American Institute of Physics.Peer Reviewe

Swift heavy ion damage to sodium chloride: synergy between excitation and thermal spikes

Systematic data on the effect of irradiation with swift ions (Zn at 735 MeV and Xe at 929 MeV) on NaCl single crystals have been analysed in terms of a synergetic two-spike approach (thermal and excitation spikes). The coupling of the two spikes, simultaneously generated by the irradiation, contributes to the operation of a non-radiative exciton decay model as proposed for purely ionization damage. Using this scheme, we have accounted for the π-emission yield of self-trapped excitons and its temperature dependence under ion-beam irradiation. Moreover, the initial production rates of F-centre growth have also been reasonably simulated for irradiation at low temperatures ( < 100 K), where colour centre annealing and aggregation can be neglected

Monte Carlo simulation of damage and amorphization induced by swift-ion irradiation in LiNbO3

This paper presents a Monte Carlo (MC) simulation tool which is applied to describe the ion beam induced damage generated by electronic excitation in LiNbO3. Based on a previously published thermal spike based analytical model, the MC technique allows for a more flexible and accurate treatment of the problem. A main advantage of this approach with respect to the analytical one is the possibility of studying the role of statistical fluctuations, relevant at low fluences. The paper recalls the main features of the physical model, describes the MC algorithm, and compares simulation results to experimental data (irradiations of LiNbO3 using silicon ions at 5 and 7.5 MeV and oxygen ions at 5 MeV). © 2006 American Institute of Physics.Peer Reviewe

Monte Carlo simulation of damage and amorphization induced by swift-ion irradiation in LiNbO3

This paper presents a Monte Carlo (MC) simulation tool which is applied to describe the ion beam induced damage generated by electronic excitation in LiNbO3. Based on a previously published thermal spike based analytical model, the MC technique allows for a more flexible and accurate treatment of the problem. A main advantage of this approach with respect to the analytical one is the possibility of studying the role of statistical fluctuations, relevant at low fluences. The paper recalls the main features of the physical model, describes the MC algorithm, and compares simulation results to experimental data (irradiations of LiNbO3 using silicon ions at 5 and 7.5 MeV and oxygen ions at 5 MeV). © 2006 American Institute of Physics.Peer Reviewe

Optical determination of three-dimensional nanotrack profiles generated by single swift-heavy ion impacts in lithium niobate

Three-dimensional (3D) profiles of single nanotracks generated by a low impact density of Cl ions at 46 MeV have been determined by optical methods, using an effective-medium approach. The buried location of the maximum stopping power induces a surface optical waveguiding layer even at ultralow fluences (1011-1013 at./cm2) that allows to obtain the effective refractive index profiles (from dark-mode measurements). Combining the optical information with Rutherford backscattering spectroscopy/channeling experiments, the existence of a surrounding defective halo around the amorphous track core has been ascertained. The 3D profile of the halo has also been determined. © 2006 American Institute of Physics.Peer Reviewe

Defect Generation Mechanisms In Silica Under Intense Electronic Excitation By Ion Beams Below 100 K: Interplay Between Radiative Emissions

Ion-beam effects on bulk silica at low temperature have been studied with the aim of understanding the routes and mechanisms leading from the initial generation of free carriers and self-trapped excitons (STEs) to the production of two stable defect structures in irradiated silica, non-bridging oxygen hole centers (NBOHCs) and oxygen deficient centers (ODCs). Ion beam induced luminescence (ionoluminescence, IL) spectra were obtained using 3 MeV H, 3.5 MeV He, 19 MeV Si, and 19 MeV Cl ions and a range of cryogenic irradiation temperatures from 30 to 100 K. The kinetic behavior of three emission bands centered at 1.9 eV (assigned to NBOHCs), 2.1 eV (assigned to the intrinsic decay of STEs), and 2.7 eV (assigned to ODCs) reveal the physical origin of these emissions under intense electronic excitation. The creation of NBOHCs is governed by a purely electronic mechanism. The kinetics curve of the NBOHC band shows two main contributions: an instantaneous (beam-on) contribution, followed by a slower fluence- and temperature-dependent process correlated with the concentration of STEs. The beam-on contribution is proportional to deposited ionization energy. The growth of the ODC band is linear in fluence up to around 2 x 1012 cm−2. The growth rate is independent of temperature but proportional to the number of radiation-induced oxygen vacancies per ion, showing, unambiguously, that the 2.7 eV emission can be associated with ODCs created in an excited state

Optical determination of three-dimensional nanotrack profiles generated by single swift-heavy ion impacts in lithium niobate

Three-dimensional (3D) profiles of single nanotracks generated by a low impact density of Cl ions at 46 MeV have been determined by optical methods, using an effective-medium approach. The buried location of the maximum stopping power induces a surface optical waveguiding layer even at ultralow fluences (1011-1013 at./cm2) that allows to obtain the effective refractive index profiles (from dark-mode measurements). Combining the optical information with Rutherford backscattering spectroscopy/channeling experiments, the existence of a surrounding defective halo around the amorphous track core has been ascertained. The 3D profile of the halo has also been determined. © 2006 American Institute of Physics.Peer Reviewe

Synergy between pyroelectric and photovoltaic effects for optoelectronic nanoparticle manipulation

© 2019 Optical Society of America. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.The combined action of the pyroelectric (PY) and photovoltaic (PV) effects, exhibited by z-cut LiNbO3:Fe substrates, has been investigated for particle trapping and patterning applications. The novel hybrid procedure provides new possibilities and versatility to optoelectronic manipulation on LiNbO3 substrates. It has allowed obtaining periodic and arbitrary 2D patterns whose particle density distribution is correlated with the light intensity profile but can be tuned through ΔT according to the relative strength of the PV and PY effects. A relevant result is that the PY and PV contributions compete for a ΔT range of 1-20 °C, very accessible for experiments. Moreover, the synergy of the PY and PV has provided two additional remarkable applications: i) A method to measure the PV field, key magnitude for photovoltaic optoelectronic tweezers. Using this method, the minimum field needed to obtain a particle pattern has been determined, resulting relatively high, E~60 kV/cm, and so, requiring highly doped crystals when only using the PV effect. ii) An strategy combining the PY and PV to get particle patterning in samples inactive for PV trapping when the PV field value is under that thresholdMinisterio de Ciencia, Innovación y Universidades of Spain (MAT2014-57704-C3, MAT2017-83951-R); Universidad Politécnica de Madrid (RR01/2016

In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities

A unique experimental setup at the Accelerator Laboratory of the University of Helsinki enables in situ positron annihilation spectroscopy (PAS) analysis on ion irradiated samples. In addition, the system enables temperature control (10-300 K) of the sample both during irradiation and during subsequent positron annihilation measurements. Using such a system for defect identification and annealing studies comes with a plethora of possibilities for elaborate studies. However, the system also poses some restrictions and challenges to these possibilities, both related to irradiation and to the PAS analysis. This review tries to address these issues.Peer reviewe