Photoelectric response of Schottky barrier in La0.7 Ca0.3 Mn O3 Nb:SrTi O3 heterojunctions

Heterojunctions composed of La0.7 Ca0.3 Mn O3 and 0.05 wt % Nb-doped SrTi O3 were fabricated using pulse laser deposition. The current-voltage characteristics of such heterojunctions can be described by tunneling with an effective Schottky barrier. These junctions showed significant response to ultraviolet and visible light. Band-to-band and internal photoemission were characterized by photoelectric experiments. A quantum efficiency of about 86% was observed at an incident energy of ∼3.95 eV, which corresponds to the band-to-band excitation of electrons in Nb:SrTi O3. From the internal photoemission, the height of Schottky barrier was determined as 1.64 eV. © 2008 American Institute of Physics.published_or_final_versio

Luminescent and structural properties of ZnO nanorods prepared under different conditions

Author name used in this publication: C. Surya2003-2004 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Magnetic properties of Mn doped ZnO tetrapod structures

Author name used in this publication: C. Surya2003-2004 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling

Negative bias temperature instability (NBTI)-generated defects (GDs) have been widely observed and known to play an important role in device’s lifetime. However, its characterization and modeling in nanoscaled devices is a challenge due to their stochastic nature. The objective of this paper is to develop a fast and accurate technique for characterizing the statistical properties of NBTI aging, which can be completed in one day and thus reduce test time significantly. The fast speed comes from replacing the conventional constant voltage stress by the voltage step stress (VSS), while the accuracy comes from capturing the GDs without recovery. The key advances are twofold: first, we demonstrate that this VSS-GD technique is applicable for nanoscaled devices; second, we verify the 15 accuracy of the statistical model based on the parameters extracted from this technique against independently measured data. The proposed method provides an effective solution for GD evaluation, as required when qualifying a CMOS process

The last of the simple remainders

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Esta energía que nos da vida. Significados acerca de la naturaleza, y de la relación entre personas y naturaleza, para personas involucradas en movimientos ecologistas en Costa Rica

Esta investigación aborda la relación de las sociedades humanas con la naturaleza, desde la perspectiva de la comunicación como proceso de interrelación y construcción intersubjetiva de realidad. Se concentra en particular en el potencial transformador de la perspectiva de ecología social o crítica que expresan doce personas reconocidas como referentes importantes en los movimientos ecologistas en Costa Rica, a partir del estudio de los procesos de comunicación mediante los que construyen y expresan los significados, narrativas y prácticas sobre la naturaleza y la relación con ella.UCR::Vicerrectoría de Investigación::Sistema de Estudios de Posgrado::Ciencias Sociales::Maestría Académica en Comunicación y Desarroll

Salience-based selection: attentional capture by distractors less salient than the target

Current accounts of attentional capture predict the most salient stimulus to be invariably selected first. However, existing salience and visual search models assume noise in the map computation or selection process. Consequently, they predict the first selection to be stochastically dependent on salience, implying that attention could even be captured first by the second most salient (instead of the most salient) stimulus in the field. Yet, capture by less salient distractors has not been reported and salience-based selection accounts claim that the distractor has to be more salient in order to capture attention. We tested this prediction using an empirical and modeling approach of the visual search distractor paradigm. For the empirical part, we manipulated salience of target and distractor parametrically and measured reaction time interference when a distractor was present compared to absent. Reaction time interference was strongly correlated with distractor salience relative to the target. Moreover, even distractors less salient than the target captured attention, as measured by reaction time interference and oculomotor capture. In the modeling part, we simulated first selection in the distractor paradigm using behavioral measures of salience and considering the time course of selection including noise. We were able to replicate the result pattern we obtained in the empirical part. We conclude that each salience value follows a specific selection time distribution and attentional capture occurs when the selection time distributions of target and distractor overlap. Hence, selection is stochastic in nature and attentional capture occurs with a certain probability depending on relative salience

Large Anomalous Hall effect in a silicon-based magnetic semiconductor

Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the most popular materials for this new technology. While Curie temperatures are rising towards room temperature, these materials can only be fabricated in thin film form, are heavily defective, and are not obviously compatible with Si. We show here that it is productive to consider transition metal monosilicides as potential alternatives. In particular, we report the discovery that the bulk metallic magnets derived from doping the narrow gap insulator FeSi with Co share the very high anomalous Hall conductance of (GaMn)As, while displaying Curie temperatures as high as 53 K. Our work opens up a new arena for spintronics, involving a bulk material based only on transition metals and Si, and which we have proven to display a variety of large magnetic field effects on easily measured electrical properties.Comment: 19 pages with 5 figure

Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation

To predict the negative bias temperature instability (NBTI) towards the end of pMOSFETs’ 10 years lifetime, power-law based extrapolation is the industrial standard method. The prediction accuracy crucially depends on the accuracy of time exponents, n. The n reported by early work spreads in a wide range and varies with measurement conditions, which can lead to unacceptable errors when extrapolated to 10 years. The objective of this work is to find how to make the n extraction independent of measurement conditions. After removing the contribution from as-grown hole traps (AHT), a new method is proposed to capture the generated defects (GD) in their entirety. The n extracted by this method is around 0.2 and insensitive to measurement conditions for the four fabrication processes we tested. The model based on this method is verified by comparing its prediction with measurements. Under AC operation, the model predicts that GD can contribute to ~90% of NBTI at 10 years