140 research outputs found
Measuring Temperature Gradients over Nanometer Length Scales
When a quantum dot is subjected to a thermal gradient, the temperature of
electrons entering the dot can be determined from the dot's thermocurrent if
the conductance spectrum and background temperature are known. We demonstrate
this technique by measuring the temperature difference across a 15 nm quantum
dot embedded in a nanowire. This technique can be used when the dot's energy
states are separated by many kT and will enable future quantitative
investigations of electron-phonon interaction, nonlinear thermoelectric
effects, and the effciency of thermoelectric energy conversion in quantum dots.Comment: 6 pages, 5 figure
Direct Observation of Propagating Gigahertz Coherent Guided Acoustic Phonons in Free Standing Single Copper Nanowires
We report on gigahertz acoustic phonon waveguiding in free-standing single
copper nanowires studied by femtosecond transient reflectivity measurements.
The results are discussed on the basis of the semianalytical resolution of the
Pochhammer and Chree equation. The spreading of the generated Gaussian wave
packet of two different modes is derived analytically and compared with the
observed oscillations of the sample reflectivity. These experiments provide a
unique way to independently obtain geometrical and material characterization.
This direct observation of coherent guided acoustic phonons in a single
nano-object is also the first step toward nanolateral size acoustic transducer
and comprehensive studies of the thermal properties of nanowires
Determining the electronic performance limitations in top-down fabricated Si nanowires with mean widths down to 4 nm
Silicon nanowires have been patterned with mean widths down to 4 nm using top-down lithography and dry etching. Performance-limiting scattering processes have been measured directly which provide new insight into the electronic conduction mechanisms within the nanowires. Results demonstrate a transition from 3-dimensional (3D) to 2D and then 1D as the nanowire mean widths are reduced from 12 to 4 nm. The importance of high quality surface passivation is demonstrated by a lack of significant donor deactivation, resulting in neutral impurity scattering ultimately limiting the electronic performance. The results indicate the important parameters requiring optimization when fabricating nanowires with atomic dimensions
Impacts of Atomistic Coating on Thermal Conductivity of Germanium Nanowires
By using non-equilibrium molecular dynamics simulations, we demonstrated that
thermal conductivity of Germanium nanowires can be reduced more than 25% at
room temperature by atomistic coating. There is a critical coating thickness
beyond which thermal conductivity of the coated nanowire is larger than that of
the host nanowire. The diameter dependent critical coating thickness and
minimum thermal conductivity are explored. Moreover, we found that interface
roughness can induce further reduction of thermal conductivity in coated
nanowires. From the vibrational eigen-mode analysis, it is found that coating
induces localization for low frequency phonons, while interface roughness
localizes the high frequency phonons. Our results provide an available approach
to tune thermal conductivity of nanowires by atomic layer coating.Comment: 24 pages, 5 figure
From thermal rectifiers to thermoelectric devices
We discuss thermal rectification and thermoelectric energy conversion from
the perspective of nonequilibrium statistical mechanics and dynamical systems
theory. After preliminary considerations on the dynamical foundations of the
phenomenological Fourier law in classical and quantum mechanics, we illustrate
ways to control the phononic heat flow and design thermal diodes. Finally, we
consider the coupled transport of heat and charge and discuss several general
mechanisms for optimizing the figure of merit of thermoelectric efficiency.Comment: 42 pages, 22 figures, review paper, to appear in the Springer Lecture
Notes in Physics volume "Thermal transport in low dimensions: from
statistical physics to nanoscale heat transfer" (S. Lepri ed.
Recent advances on thermoelectric materials
By converting waste heat into electricity through the thermoelectric power of
solids without producing greenhouse gas emissions, thermoelectric generators
could be an important part of the solution to today's energy challenge. There
has been a resurgence in the search for new materials for advanced
thermoelectric energy conversion applications. In this paper, we will review
recent efforts on improving thermoelectric efficiency. Particularly, several
novel proof-of-principle approaches such as phonon disorder in
phonon-glasselectron crystals, low dimensionality in nanostructured materials
and charge-spin-orbital degeneracy in strongly correlated systems on
thermoelectric performance will be discussed.Comment: 12 pages, 12 figure
First-principles quantum transport modeling of thermoelectricity in single-molecule nanojunctions with graphene nanoribbon electrodes
We overview nonequilibrium Green function combined with density functional
theory (NEGF-DFT) modeling of independent electron and phonon transport in
nanojunctions with applications focused on a new class of thermoelectric
devices where a single molecule is attached to two metallic zigzag graphene
nanoribbons (ZGNRs) via highly transparent contacts. Such contacts make
possible injection of evanescent wavefunctions from ZGNRs, so that their
overlap within the molecular region generates a peak in the electronic
transmission. Additionally, the spatial symmetry properties of the transverse
propagating states in the ZGNR electrodes suppress hole-like contributions to
the thermopower. Thus optimized thermopower, together with diminished phonon
conductance through a ZGNR/molecule/ZGNR inhomogeneous structure, yields the
thermoelectric figure of merit ZT~0.5 at room temperature and 0.5<ZT<2.5 below
liquid nitrogen temperature. The reliance on evanescent mode transport and
symmetry of propagating states in the electrodes makes the
electronic-transport-determined power factor in this class of devices largely
insensitive to the type of sufficiently short conjugated organic molecule,
which we demonstrate by showing that both 18-annulene and C10 molecule
sandwiched by the two ZGNR electrodes yield similar thermopower. Thus, one can
search for molecules that will further reduce the phonon thermal conductance
(in the denominator of ZT) while keeping the electronic power factor (in the
nominator of ZT) optimized. We also show how often employed Brenner empirical
interatomic potential for hydrocarbon systems fails to describe phonon
transport in our single-molecule nanojunctions when contrasted with
first-principles results obtained via NEGF-DFT methodology.Comment: 20 pages, 6 figures; mini-review article prepared for the special
issue of the Journal of Computational Electronics on "Simulation of Thermal,
Thermoelectric, and Electrothermal Phenomena in Nanostructures", edited by I.
Knezevic and Z. Aksamij
One dimensional transport in silicon nanowire junction-less field effect transistors
Junction-less nanowire transistors are being investigated to solve short channel effects
in future CMOS technology. Here we demonstrate 8 nm diameter silicon
nanowire junction-less transistors with metallic doping densities which demonstrate
clear 1D electronic transport characteristics. The 1D regime allows excellent gate
modulation with near ideal subthreshold slopes, on- to off-current ratios above 108
and high on-currents at room temperature. Universal conductance scaling as a function
of voltage and temperature similar to previous reports of Luttinger liquids and
Coulomb gap behaviour at low temperatures suggests that many body effects including
electron-electron interactions are important in describing the electronic transport.
This suggests that modelling of such nanowire devices will require 1D models which
include many body interactions to accurately simulate the electronic transport to
optimise the technology but also suggest that 1D effects could be used to enhance
future transistor performance
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