PANI-derived polymer/Al2O3 nanocomposites: synthesis, characterization, and electrochemical studies

This paper presents the physicochemical, conductive, and electrochemical properties of different polyaniline (PANI)-derived polymer/Al2O3 nanocomposites synthesized by chemical oxidation polymerization method carried out in two stages: first, activation of the surface of the Al2O3 nanoparticles by hydrochloric acid and second, polymerization of 2-chloroaniline (2ClANI), aniline (ANI), and the copolymer (2ClANI-ANI) in the presence of Al2O3 by using ammonium persulfate as oxidant in aqueous hydrochloric acid. XRD and TEM results reveal the growth of the polymers on Al2O3 nanoparticles and the formation of PANI-derived polymer/Al2O3 nanocomposites. FTIR and UV-Vis show a systematic shifting of the characteristic bands of the polymers with the presence of Al2O3 nanoparticles. Moreover, these nanoparticles enhance the thermal stability of the polymers, as found by thermogravimetric analysis (TGA). Although the incorporation of Al2O3 nanoparticles reduces the electric conductivity of the polymers, the resulting nanocomposites still keep high conductivities, ranging between 0.3 × 10−2 and 9.2 × 10−2 S cm−1. As a result, the polymer/Al2O3 nanocomposites exhibit a good voltammetric response. All these synergetic features of the nanocomposites are assigned to the effective interaction of the polymers and Al2O3 particles at nanoscale.This work was supported by the National Assessment and Planning Committee of the University Research (CNEPRU number E-03720130015), the Directorate General of Scientific Research and Technological Development (DGRSDT) of Algeria. The financial support from MINECO is also acknowledged (MAT2013-42007-P project)

Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots

We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T ≤ 40 K) photon correlation measurements under continuous wave excitation show nearly perfect single-photon emission from a single GaAs QD and reveal the single photon nature of the emitted light up to 77 K. The QD emission energies, homogeneous linewidths and the thermally activated behavior as a function of temperature are discussed

Influence of Al-doped ZnO Transparent Contacts Deposited by a Spray Pyrolysis Technique on Performance of HIT Solar Cells

AbstractTransparent and conductive Al-doped ZnO (AZO) thin films were deposited by spray pyrolysis and analysed in the aim to improve optical and electrical properties involved in the efficiency of Heterostructure with Intrinsic Thin Layer (HIT) solar cell. X-ray diffraction measurement shows that AZO film grown on glass has (002) preferred orientation. High optical transmittance value of ∼80% in the visible region was observed and the optical band gap was found to be 3.31eV at room temperature. The influence of AZO thin films as transparent conductive oxide TCO on heterojunction with intrinsic thin-layer (HIT) solar cell performance was investigated using software simulation. The beneficial effect of implementing AZO front contact for increasing electrical energy conversion properties of HIT solar cell compared to the reference cell without the AZO layer

Correlated Photon-Pair Emission from a Charged Single Quantum Dot

The optical creation and recombination of charged biexciton and trion complexes in an (In,Ga)As/GaAs quantum dot is investigated by micro-photoluminescence spectroscopy. Photon cross-correlation measurements demonstrate the temporally correlated decay of charged biexciton and trion states. Our calculations provide strong evidence for radiative decay from the excited trion state which allows for a deeper insight into the spin configurations and their dynamics in these systems.Comment: 5 pages, 3 figures, submitted for publicatio

A Chip-Level BSOR-based linear GSIC multiuser Detector for Long-Code CDMA Systems

In this work, we introduce a chip-level linear group-wise successive interference cancellation (GSIC) multi-user structure that is asymptotically equivalent to block successive over-relaxation (BSOR) iteration, which is known to outperform the conventional block Gauss-Seidel iteration by an order of magnitude in terms of convergence speed. The main advantage of the proposed scheme is that it uses directly the spreading codes instead of the cross-correlation matrix and thus doesn’t require the calculation of the cross-correlation matrix (requires 2NK2 floating point operations (flops), where N is the processing gain and K is the number of users) which reduces significantly the overall computational complexity. Thus it is suitable for long-code CDMA systems such as IS-95 and UMTS where the cross-correlation matrix is changing every symbol. We study the convergence behavior of the proposed scheme using two approaches and prove that it converges to the decorrelator detector if the over-relaxation factor is in the interval ]0, 2[. Simulation results are in excellent agreement with theory