The phosphorylation of BAG3 by CDK5 and its roles in astrocytes

细胞周期素依赖性蛋白激酶5（Cyclin-DependentKinase5，CDK5)是细胞周期蛋白依赖性丝氨酸/苏氨酸蛋白激酶家族中的一个成员，在神经系统的发育中发挥了至关重要的作用。CDK5的调节亚基P35、P39是神经系统特异性表达的蛋白，因此赋予了CDK5在神经系统中特异的激酶活性，使CDK5在调控神经递质传递，神经元凋亡等方面发挥了重要作用。对于CDK5的研究一直集中在对其新底物的发现和鉴定上，至今为止有40余个CDK5的底物被鉴定出来。作为脯氨酸依赖性蛋白激酶，CDK5可以特异磷酸化包含有(S/T)PX(H/K/R)序列的底物蛋白，其中S/T代表丝氨酸/苏氨酸，X代表任意氨基酸，P...Cyclin-dependent kinase 5 (CDK5), a serine/threonine kinase, was originally identified as a member of the cyclin-dependent kinase family based on sequence homology. CDK5 is activated by p35 and p39 whose expression are found almost exclusively in the nervous system (both CNS and PNS). Thus, CDK5 plays an important role in nerves system including regulating neurotransmitter releasing, neuronal deve...学位：理学硕士院系专业：医学院_微生物学学号：2452013115342

Fibrewise Rational H-Spaces

We prove fibrewise versions of classical theorems of Hopf and Leray-Samelson. Our results imply the fibrewise H-triviality after rationalization of a certain class of fibrewise H-spaces. They apply, in particular, to universal adjoint bundles. From this, we may retrieve a result of Crabb and Sutherland [Proc. London Math. Soc. (2000), 747-768], which is used there as a crucial step in establishing their main finiteness result

Regional Research of Old Industrial Buildings Renovation under Low Carbon Context

产业建筑作为工业文明的遗存，代表了一个时代最先进的生产力，也代表了人们对城市建设的无限热情。随着“低碳文明”的出现，这些代表了人们对过去无数回忆的场所，如何进行转型，重新融入城市发展，以最大限度促进资源再循环，成为了社会关注的焦点。因此，本文将探讨低碳语境下，旧产业建筑改造与城市经济、文化、生活等相结合的可能，在展现旧产业建筑文化的同时，传播地域文化概念。 首先，本文试图从“低碳”这一当前最为热点的环境保护话题入手，通过分析低碳文明所带来的经济、文化和生活方面的改变，论述“低碳”并不是一味地追求潮流，而是一个循序渐进的过程；并在此基础之上，分析低碳理念下建筑的系统特征以及低碳时代人们的审美取...As industrial civilization remains, industrial buildings represent the most advanced productivity in an era. Also, it represents people’s infinite enthusiasm with urban construction. As "low carbon civilization" appears, how the place that represents people’s past innumerable memories transforms to reintegrate into urban development to promote resource recycling to the uttermost, becomes the focus...学位：建筑学硕士院系专业：建筑与土木工程学院土木工程系_建筑设计及其理论学号：2522008115178

sense synthesis of the art——from Merleau-Ponty

本文从梅洛•庞蒂的思想出发，来谈论艺术中“感官综合”的问题。全文共分三个部分。第一章通过对梅洛•庞蒂思想的表述，得出“感官综合”是一种身体意向性（尽管他本人并没有说“感官综合”是身体意向性，但从他的叙述脉络中我们可以顺理成章地得到这个结论）。第二章首先梳理了艺术中的通感现象，然后从《塞尚的疑惑》一文中得出“感官综合”向艺术提出了一个要求，即在艺术中发现呈现给感官的全部可能性，而要满足这一要求，就需要达到艺术中的交媾式的“物我同一”。第三章介绍了艺术如何通过身体的介入和感觉的多样化两方面，也就是身体整体参与到艺术中的方式来回应这个要求的。并在文章的末尾指出，可能虚拟空间艺...This work walks from Merleau-Ponty’s thought,discussing the issue about“sense synthesis”. There are three chapters here. Chapter I expounds Merleau-Ponty’s thought,giving a conclusion about that“sense synthesis” is body intentinalitat.Chapter II analyses the phenomenon of synaesthesia in the art.Then,though the work ,“sense synthesis” requests the art to present the whole possibilities to the sen...学位：文学硕士院系专业：人文学院中文系_艺术学学号：1022008115245

活性碳上羧酸根锚定AuCl3催化乙炔氢氯化反应的理论研究

采用密度泛函B3LYP方法,运用分子模型对活性碳（AC）上羧酸根负载AuClx催化剂的活性结构、稳定性以及催化乙炔氢氯化反应机制进行了详细的理论探讨。结果表明,AuCl3催化剂可以被表面羧酸根单中心级分散锚定,形成AC-COOH-AuCl3表面活性中心,进而在氢氯化过程中与乙炔发生协同加成生成氯乙烯,同时形成具有螯合结构的表面活性中心AC-CO2>AuCl2,进而催化氢氯化反应遵循分步反应异步加成机制:乙炔活化吸附到Au（Ⅲ）中心,HCl异裂亲核加成到乙炔伴随羧酸根质子化,分子内质子迁移形成Au（Ⅲ）-氯乙烯d-π配键络合物,氯乙烯脱除恢复AC-CO2>AuCl2螯合结构。计算还表明,AC-COOH-AuCl3表面活性中心比Au2Cl6催化组分更不易被乙炔还原失活。国家自然科学基金(91545105,21273177

Progress in research of hypoxia in estuaries and coastal areas in China

对长江、珠江等河口及其近海水域缺氧现象与影响因素进行研究,结果表明,主要分布于长江与珠江河口及其邻近海域的缺氧现象,夏季(6-8月)达到最盛,秋; 冬季消失;长江口的缺氧区域主要位于30.75°N~32°N,122.5°E~123.25°E附近海域,具有南北2个缺氧中心;珠江口缺氧程度相对较; 轻,缺氧区域主要在广州黄埔区河段至虎门水域和伶仃洋;辽河、钱塘江、海河等河口区域也时而出现零星的缺氧现象;水体缺氧受控于多项环境要素,物理层化作; 用是缺氧产生的最初诱因之一,陆源污染物的分解则是重要的耗氧负荷;各河口区特征各异,潮汐、洋流、营养盐、叶绿素a等要素对缺氧区的范围、程度和持续时; 间影响程度不一。In order to study hypoxia in the main estuaries and adjacent coastal; areas in China, we compared the hypoxia in the estuaries of the Yangtze; River, the Pearl River, and other rivers, and analyzed the factors. We; found that hypoxia mainly occurred in the estuaries of the Yangtze; River, the Pearl River, and the adjacent coastal areas; it had the most; significant increase in the summer (from June to August) and disappeared; in the autumn and winter. The hypoxia zone in the Yangtze River Estuary; was mainly located in the area with latitudes from 30.75°N to 32°N and; longitudes from 122.5°E to 123.25°E, and there were two hypoxia centers; in the south and north, respectively. The degree of hypoxia in the Pearl; River Estuary was relatively moderate, and hypoxia mainly occurred from; the Huangpu section to Humen waters in Guangzhou and in the Lingdingyang; Channel. In addition, hypoxia occasionally occurred in the estuaries of; the Liaohe River, Qiantang River, and Haihe River. We also found that; hypoxia was subjected to many environmental factors, of which the; stratification of water was one of the initial factors and the; decomposition of terrigenous pollutants was a major factor of oxygen; consumption. Tides, upwellings, nutrients, and chlorophyll-a had; different influences on the scale, degree, and duration of hypoxia, due; to the various characteristics of the estuaries

Effects of Spartina alterniflora on Mangrove Kandelia candel Seedlings Regeneration

以裸露的光滩为对照,在福建漳江口红树林国家级自然保护区互花米草入侵地进行秋茄胚轴插植试验,探究互花米草入侵对秋茄幼苗更新的影响。结果表明:由于互花米草遮荫的影响,秋茄幼苗生长缓慢,茎杆纤细且叶片出现脱落现象,最终由于互花米草的倒伏覆盖使得秋茄幼苗完全失去光照而全部死亡。The study was conducted in Zhangjiangkou Mangrove National Nature Reserve.Study sited with Kandelia candel hypocotyls were separately set in the places invaded by Spartina alterniflora with the control of places of bare tidal flat.The growth and survival of K.candel hypocotyls in the scopes of S.alterniflora communities were surveyed to evaluate the effects of the invasion on the regeneration of K.candel seedlings.The results showed that K.candel seedlings poorly grew because of the Spartina alterniflora shading, stalks were slender and leaves abscised,at last,because of the lodging of S.alterniflora,K.candel seedlings losed sunlight and died.国家自然科学基金项目(30600077)资

Relation of personality to life satisfaction and depression in visual artists

目的：检验视觉艺术工作者的人格特征与生活满意度、抑郁情绪的线性关系，并考察可能存在的非线性关系模式。方法：选取北京市宋庄艺术区视觉艺术工作者132人，其主要从事绘画、雕塑、摄影等艺术创作。采用大五人格测量问卷（Mini-IPIP）、生活满意度量表（SWLS）和流调中心抑郁量表（CES-D）进行施测。结果：视觉艺术工作者的神经质对抑郁有正向预测（&beta;＝0.41），宜人性、严谨性和外向性对抑郁存在负向预测（&beta;＝－0.27、－0.23、－0.19）；在人格特质与生活满意度的线性关系模式中，仅严谨性对生活满意度存在正向预测（&beta;＝0.25）。控制了线性关系的影响之后，神经质和严谨性与生活满意度之间均呈正 U 型曲线关系（&beta;＝0.32、0.22）。结论：视觉艺术工作者的人格因素能够预测抑郁症状与生活满意度水平，但其人格与生活满意度的关系模式不能用简单的线性模型来解释。</p

Schottky Barrier S /D Metal Oxide Semiconductor Field Effect Transistors with Ge /SiGe Heterostructure

制备了氧化铪(HfO2)高k介质栅SI基gE/SIgE异质结构肖特基源漏场效应晶体管(Sb-MOSfET)器件,研究了n型掺杂SI0.16gE0.84层对器件特性的影响,分析了n型掺杂SIgE层降低器件关态电流的机理。使用uHV CVd沉积系统,采用低温gE缓冲层技术进行了材料生长,首先在SI衬底上外延gE缓冲层,随后生长32 nM SI0.16gE0.84和12 nM gE,并生长1 nM SI作为钝化层。使用原子力显微镜和X射线衍射对材料形貌和晶体质量进行表征,在源漏区沉积nI薄膜并退火形成nIgE/gE肖特基结,制备的P型沟道肖特基源漏MOSfET,其未掺杂gE/SIgE异质结构MOSfET器件的空穴有效迁移率比相同工艺条件制备的硅器件的高1.5倍,比传统硅器件空穴有效迁移率提高了80%,掺杂器件的空穴有效迁移率与传统硅器件的相当。Si-based Ge /SiGe heterostructure Schottky barrier source and drain metal oxide semiconductor field effect transistors( SB-MOSFETs) with hafnium dioxide high-k gate were fabricated.The effect of the n-type doped Si 0.16 Ge 0.84 layer on the device performance was investigated,and the mechanism of the device off-state current reduction caused by the n type doping SiGe layer was analyzed.Firstly,Ge buffer was fabricated with low-temperature Ge buffer technique.Then a 32 nm Si 0.16 Ge 0.84 layer and a 12 nm Ge layer were grown on the Ge buffer in the same UHVCVD system.For comparative study, the 32 nm Si 0.16 Ge 0.84 layer was controlled undoped or n-type doped by P.For all samples,1 nm Si layer was grown to passivate the Ge surface.Atomic force microscopy and X-ray diffraction were used to characterize the surface morphology and crystal quality of the materials.NiGe / Ge Schottky junctions in source and drain were formed by nickel layer deposition and anneal.The fabricated Ge / SiGe heterosturctual MOSFET device without n-type doping shows 150% enhancement of the hole effective mobility over that of the control Si device and about 80% enhancement over the universal Si device.And the device with n-type doping shows a comparable hole effective mobility with the universal Si MOSFET device.国家自然科学基金资助项目(61036003;61176092); 国家重点基础研究发展计划(973计划)资助项目(2012CB933503;2013CB632103); 中央高校基本科研业务费资助项目(2010121056