Tools for Automated Design of ΣΔ Modulators

We present a set of CAD tools to design ΣΔ modulators. They use statistical optimization to calculate optimum specifications for the building blocks used in the modulators, and optimum sizes for the components in these blocks. Optimization procedures at the modulator level are equation-based, while procedures at the cell level are simulation-based. The toolset incorporates also an advanced ΣΔ behavioral simulator for monitoring and design space exploration. We include measurements taken from two silicon prototypes: 1) a 17bit@40kHz output rate fourth-order low-pass modulator; and 2) a [email protected] central freq@10kHz bandwidth band-pass modulator. The first uses SC fully-differential circuits in a 1.2μm CMOS double-metal double-poly technology. The second uses SI fully-differential circuits in a 0.8μm CMOS double-metal single-poly technology.This work has been supported by the CEE ESPRIT Program in the framework of the Project #8795 (AMFIS).Peer reviewe

Tools for Automated Design of ΣΔ Modulators

We present a set of CAD tools to design ΣΔ modulators. They use statistical optimization to calculate optimum specifications for the building blocks used in the modulators, and optimum sizes for the components in these blocks. Optimization procedures at the modulator level are equation-based, while procedures at the cell level are simulation-based. The toolset incorporates also an advanced ΣΔ behavioral simulator for monitoring and design space exploration. We include measurements taken from two silicon prototypes: 1) a 17bit@40kHz output rate fourth-order low-pass modulator; and 2) a [email protected] central freq@10kHz bandwidth band-pass modulator. The first uses SC fully-differential circuits in a 1.2μm CMOS double-metal double-poly technology. The second uses SI fully-differential circuits in a 0.8μm CMOS double-metal single-poly technology

Linearization of Time-encoded ADCs Architectures for Smart MEMS Sensors in Low Power CMOS Technology

Mención Internacional en el título de doctorIn the last few years, the development of mobile technologies and machine learning applications has increased the demand of MEMS-based digital microphones. Mobile devices have several microphones enabling noise canceling, acoustic beamforming and speech recognition. With the development of machine learning applications the interest to integrate sensors with neural networks has increased. This has driven the interest to develop digital microphones in nanometer CMOS nodes where the microphone analog-front end and digital processing, potentially including neural networks, is integrated on the same chip. Traditionally, analog-to-digital converters (ADCs) in digital microphones have been implemented using high order Sigma-Delta modulators. The most common technique to implement these high order Sigma-Selta modulators is switchedcapacitor CMOS circuits. Recently, to reduce power consumption and make them more suitable for tasks that require always-on operation, such as keyword recognition, switched-capacitor circuits have been improved using inverter-based operational amplifier integrators. Alternatively, switched-capacitor based Sigma- Delta modulators have been replaced by continuous time Sigma-Delta converters. Nevertheless, in both implementations the input signal is voltage encoded across the modulator, making the integration in smaller CMOS nodes more challenging due to the reduced voltage supply. An alternative technique consists on encoding the input signal on time (or frequency) instead of voltage. This is what time-encoded converters do. Lately, time-encoding converters have gained popularity as they are more suitable to nanometer CMOS nodes than Sigma-Delta converters. Among the ones that have drawn more interest we find voltage-controlled oscillator based ADCs (VCOADCs). VCO-ADCs can be implemented using CMOS inverter based ring oscillators (RO) and digital circuitry. They also show noise-shaping properties. This makes them a very interesting alternative for implementation of ADCs in nanometer CMOS nodes. Nevertheless, two main circuit impairments are present in VCO-ADCs, and both come from the oscillator non-idealities. The first of them is the oscillator phase noise, that reduces the resolution of the ADC. The second is the non-linear tuning curve of the oscillator, that results in harmonic distortion at medium to high input amplitudes. In this thesis we analyze the use of time encoding ADCs for MEMS microphones with special focus on ring oscillator based ADCs (RO-ADCs). Firstly, we study the use of a dual-slope based SAR noise shaped quantizer (SAR-NSQ) in sigma-delta loops. This quantizer adds and extra level of noise-shaping to the modulator, improving the resolution. The quantizer is explained, and equations for the noise transfer function (NTF) of a third order sigma-delta using a second order filter and the NSQ are presented. Secondly, we move our attention to the topic of RO-ADCs. We present a high dynamic range MEMS microphone 130nm CMOS chip based on an open-loop VCO-ADC. This dissertation shows the implementation of the analog front-end that includes the oscillator and the MEMS interface, with a focus on achieving low power consumption with low noise and a high dynamic range. The digital circuitry is left to be explained by the coauthor of the chip in his dissertation. The chip achieves a 80dBA peak SNDR and 108dB dynamic range with a THD of 1.5% at 128 dBSPL with a power consumption of 438μW. After that, we analyze the use of a frequency-dependent-resistor (FDR) to implement an unsampled feedback loop around the oscillator. The objective is to reduce distortion. Additionally phase noise mitigation is achieved. A first topology including an operational amplifier to increase the loop gain is analyzed. The design is silicon proven in a 130 nm CMOS chip that achieves a 84 dBA peak SNDR with an analog power consumption of 600μW. A second topology without the operational amplifier is also analyzed. Two chips are designed with this topology. The first chip in 130 nm CMOS is a full VCO-ADC including the frequencyto- digital converter (F2D). This chip achieves a peak SNDR of 76.6 dBA with a power consumption of 482μW. The second chip includes only the oscillator and is implemented in 55nm CMOS. The peak SNDR is 78.15 dBA and the analog power consumption is 153μW. To finish this thesis, two circuits that use an FDR with a ring oscillator are presented. The first is a capacity-to-digital converter (CDC). The second is a filter made with an FDR and an oscillator intended for voice activity detection tasks (VAD).En los últimos años, el desarrollo de las tecnologías móviles y las aplicaciones de machine-learning han aumentado la demanda de micrófonos digitales basados en MEMS. Los dipositivos móviles tienen varios micrófonos que permiten la cancelación de ruido, el beamforming o conformación de haces y el reconocimiento de voz. Con el desarrollo de aplicaciones de aprendizaje automático, el interés por integrar sensores con redes neuronales ha aumentado. Esto ha impulsado el interés por desarrollar micrófonos digitales en nodos CMOS nanométricos donde el front-end analógico y el procesamiento digital del micrófono, que puede incluir redes neuronales, está integrado en el mismo chip. Tradicionalmente, los convertidores analógicos-digitales (ADC) en micrófonos digitales han sido implementados utilizando moduladores Sigma-Delta de orden elevado. La técnica más común para implementar estos moduladores Sigma- Delta es el uso de circuitos CMOS de capacidades conmutadas. Recientemente, para reducir el consumo de potencia y hacerlos más adecuados para las tareas que requieren una operación continua, como el reconocimiento de palabras clave, los convertidores Sigma-Delta de capacidades conmutadas has sido mejorados con el uso de integradores implementados con amplificadores operacionales basados en inversores CMOS. Alternativamente, los Sigma-Delta de capacidades conmutadas han sido reemplazados por moduladores en tiempo continuo. No obstante, en ambas implementaciones, la señal de entrada es codificada en voltaje durante el proceso de conversión, lo que hace que la integración en nodos CMOS más pequeños sea complicada debido a la menor tensión de alimentación. Una técnica alternativa consiste en codificar la señal de entrada en tiempo (o frecuencia) en lugar de tensión. Esto es lo que hacen los convertidores de codificación temporal. Recientemente, los convertidores de codificación temporal han ganado popularidad ya que son más adecuados para nodos CMOS nanométricos que los convertidores Sigma-Delta. Entre los que más interés han despertado encontramos los ADCs basados en osciladores controlados por tensión (VCO-ADC). Los VCO-ADC se pueden implementar usando osciladores en anillo (RO) implementados con inversores CMOS y circuitos digitales. Esta familia de convertidores también tiene conformado de ruido. Esto los convierte en una alternativa muy interesante para la implementación de convertidores en nodos CMOS nanométricos. Sin embargo, dos problemas principales están presentes en este tipo de ADCs debidos ambos a las no idealidades del oscilador. El primero de los problemas es la presencia de ruido de fase en el oscilador, lo que reduce la resolución del ADC. El segundo es la curva de conversion voltaje-frecuencia no lineal del oscilador, lo que causa distorsión a amplitudes medias y altas. En esta tesis analizamos el uso de ADCs de codificación temporal para micrófonos MEMS, con especial interés en ADCS basados en osciladores de anillo (RO-ADC). En primer lugar, estudiamos el uso de un cuantificador SAR con conformado de ruido (SAR-NSQ) en moduladores Sigma-Delta. Este cuantificador agrega un orden adicional de conformado de ruido al modulador, mejorando la resolución. En este documento se explica el cuantificador y obtienen las ecuaciones para la función de transferencia de ruido (NTF) de un sigma-delta de tercer orden usando un filtro de segundo orden y el NSQ. En segundo lugar, dirigimos nuestra atención al tema de los RO-ADC. Presentamos el chip de un micrófono MEMS de alto rango dinámico en CMOS de 130 nm basado en un VCO-ADC de bucle abierto. En esta tesis se explica la implementación del front-end analógico que incluye el oscilador y la interfaz con el MEMS. Esta implementación se ha llevado a cabo con el objetivo de lograr un bajo consumo de potencia, un bajo nivel de ruido y un alto rango dinámico. La descripción del back-end digital se deja para la tesis del couator del chip. La SNDR de pico del chip es de 80dBA y el rango dinámico de 108dB con una THD de 1,5% a 128 dBSPL y un consumo de potencia de 438μW. Finalmente, se analiza el uso de una resistencia dependiente de frecuencia (FDR) para implementar un bucle de realimentación no muestreado alrededor del oscilador. El objetivo es reducir la distorsión. Además, también se logra la mitigación del ruido de fase del oscilador. Se analyza una primera topologia de realimentación incluyendo un amplificador operacional para incrementar la ganancia de bucle. Este diseño se prueba en silicio en un chip CMOS de 130nm que logra un pico de SNDR de 84 dBA con un consumo de potencia de 600μW en la parte analógica. Seguidamente, se analiza una segunda topología sin el amplificador operacional. Se fabrican y miden dos chips diseñados con esta topologia. El primero de ellos en CMOS de 130 nm es un VCO-ADC completo que incluye el convertidor de frecuencia a digital (F2D). Este chip alcanza un pico SNDR de 76,6 dBA con un consumo de potencia de 482μW. El segundo incluye solo el oscilador y está implementado en CMOS de 55nm. El pico SNDR es 78.15 dBA y el el consumo de potencia analógica es de 153μW. Para cerrar esta tesis, se presentan dos circuitos que usan la FDR con un oscilador en anillo. El primero es un convertidor de capacidad a digital (CDC). El segundo es un filtro realizado con una FDR y un oscilador, enfocado a tareas de detección de voz (VAD).Programa de Doctorado en Ingeniería Eléctrica, Electrónica y Automática por la Universidad Carlos III de MadridPresidente: Antonio Jesús Torralba Silgado.- Secretaria: María Luisa López Vallejo.- Vocal: Pieter Rombout

Design of a 130-nm CMOS Reconfigurable Cascade ΣΔ Modulator for GSM/UMTS/Bluetooth

This paper reports a 130-nm CMOS programmable cascade ΣΔ modulator for multistandard wireless terminals, covering three standards: GSM, Bluetooth and UMTS. The modulator is reconfigured at both architecture- and circuitlevel in order to adapt its performance to the different standard specifications with optimized power consumption. The design of the building blocks is based upon a top-down CAD methodology that combines simulation and statistical optimization at different levels of the system hierarchy. Transistor-level simulations show correct operation for all standards, featuring 13-bit, 11.3-bit and 9-bit effective resolution within 200-kHz, 1-MHz and 4-MHz bandwidth, respectively.España, Ministerio de Educación y Ciencia TEC2004-01752/MI

Design of a 16-bit 50-kHz low-power SC delta-sigma modulator for ADC in 0.18um CMOS technology

This Master Thesis work aims to design a low power high-resolution Delta-Sigma modulator for ADC in a low-cost standard mixed-mode CMOS technology. For this purpose, a single-bit single loop Delta-Sigma architecture will be selected in order to mitigate distortion issues caused by technology mismatching. Also, the switched capacitor (SC) circuit implementation of the Delta-Sigma modulator will avoid the use of any internal voltage supply bootstrapping for biasing critical switches in favor of extending IC lifetime. The designer will take benefit of the low-power Class-AB OpA general purpose 16 Bits Sigma-Delta modulator ADC for double precision audio 50 kHz bandwidth, targeted for Low-power operation, involving no additional digital circuit compensation, no bootstrapping techniques and resistor-less topologies, and relaying on Switched Capacitor Sigma-Delta modulator topologies for robust operation and insensitivity to process and temperature variations, is presented in this work. Designed in a commercial 180 nm technology, the whole circuit static current is calculated in 620 uA with a nominal voltage supply of 1.8 V, performing a Schreier FOM of 174.16 dB. This outstanding state-of-the-art forseen FOM is achieved by the use of architectural and circuital Low-power techniques. At the architectural level a single loop Low-distortion topology with the optimum order and coefficients have been chosen, while at circuit level very novel OTA based on Variable Mirror Amplifiers allows an efficient Class-AB operation. Specially optimized switched variable mirror amplifiers with a novel design methodology based on Bottom-up approach, allows faster design stages ensuring feasable circuit performance at architectural level without the need of large iterative simulations of the complete SC Sigma-Delta modulator. Simulation results confirms the complete optimization process and the metioned advantages with respect to the tradicional approach

Design of passive SD modulator for ESP32

This thesis addresses the problem of voice recognition, by studying how to build a lowcost solution for data acquisition, presents the analysis, design implementation and simulation of a low-cost continuous-time(CT) passive sigma-delta modulator(SDM) with signal-to-noise-plus-distortion ratio(SNDR) > 86dB to increase fidelity in voice recognition applications. Employing passive RC integrators and a differential signal structure, the CT passive SDM is optimized to work as independently from a specific comparator module as possible, by decreasing the necessary gain of the comparator in the modulator gain. Nevertheless, the loop gain is restricted by the comparator’s noise, aggravated by the high attenuation of the passive RC integrators on the signal, causing low voltage swing at the comparator’s input. It is discussed the viability of utilizing a microprocessor (μP) as substitute of the comparator block in a CT passive SDM, specifically, the esp32. Due to hardware limitations and the high-frequency requirements of the CT passive SDM, it is proven this substitution is not viable. Along the course of the design implementation a comparison in the performance of three different simulation software is presented, these software being, the open-source LTspice VII, the open-source Ngspice and the private Cadence Virtuoso. As it was necessary to change simulation software at different stages in the design of the circuit

A survey on continuous-time modulators : theory, designs and implementations

Recently, delta-sigma modulation has become a widely applied technique for high-performance analog-to-digital conversion of narrow-band signals. Most of the early designs used discrete-time structure for good accuracy and good linearity. The transfer functions are independent of the clock frequency. However, high unity-gain bandwidths of the opamps are required to satisfy the settling accuracy required in the discrete-time designs. Continuous-time structure can potentially achieve higher clock frequency with less power consumption. the anti-aliasing filter can also be eliminated due to the anti-aliasing property of CT modulators. On the other hand, CT ADC have their own problems, such as jitter sensitivity and excess loop delay. In this thesis, the state-of-the-art of CT modulator is reviewed. The problems in the design of CT ADCs are analyzed and solutions to them are described. The theory, design and implementations of CT modulator will also be reviewed.Keywords: Continuous-Time, Delta-Sigm

High-Speed Delta-Sigma Data Converters for Next-Generation Wireless Communication

In recent years, Continuous-time Delta-Sigma(CT-ΔΣ) analog-to-digital converters (ADCs) have been extensively investigated for their use in wireless receivers to achieve conversion bandwidths greater than 15 MHz and higher resolution of 10 to 14 bits. This dissertation investigates the current state-of-the-art high-speed single-bit and multi-bit Continuous-time Delta-Sigma modulator (CT-ΔΣM) designs and their limitations due to circuit non-idealities in achieving the performance required for next-generation wireless standards. Also, we presented complete architectural and circuit details of a high-speed single-bit and multi-bit CT-ΔΣM operating at a sampling rate of 1.25 GSps and 640 MSps respectively (the highest reported sampling rate in a 0.13 μm CMOS technology node) with measurement results. Further, we propose novel hybrid ΔΣ architecture with two-step quantizer to alleviate the bandwidth and resolution bottlenecks associated with the contemporary CT-ΔΣM topologies. To facilitate the design with the proposed architecture, a robust systematic design method is introduced to determine the loop-filter coefficients by taking into account the non-ideal integrator response, such as the finite opamp gain and the presence of multiple parasitic poles and zeros. Further, comprehensive system-level simulation is presented to analyze the effect of two-step quantizer non-idealities such as the offset and gain error in the sub-ADCs, and the current mismatch between the MSB and LSB elements in the feedback DAC. The proposed novel architecture is demonstrated by designing a high-speed wideband 4th order CT-ΔΣ modulator prototype, employing a two-step quantizer with 5-bits resolution. The proposed modulator takes advantage of the combination of a high-resolution two-step quantization technique and an excess-loop delay (ELD) compensation of more than one clock cycle to achieve lower-power consumption (28 mW), higher dynamic range (\u3e69 dB) with a wide conversion bandwidth (20 MHz), even at a lower sampling rate of 400 MHz. The proposed modulator achieves a Figure of Merit (FoM) of 340 fJ/level

Integrated chaos generators

This paper surveys the different design issues, from mathematical model to silicon, involved on the design of integrated circuits for the generation of chaotic behavior.Comisión Interministerial de Ciencia y Tecnología 1FD97-1611(TIC)European Commission ESPRIT 3110

Bandpass delta-sigma modulators for radio receivers

This thesis concerns discrete-time (DT) bandpass (BP) ΔΣ modulators targeted for intermediate frequency (IF) analog-to-digital (A/D) conversion in radio receivers. The receiver architecture adopted has to be capable of operating with different radio frequencies, channel bandwidths, and modulation techniques. This is necessary in order to achieve an extensive operating area and the possibility of utilizing a local mobile phone standard or a standard suitable for a specific service. The digital IF receiver is a good choice for a multi-mode and multi-band mobile phone receiver, because the signal demodulation and channel filtering are performed in the digital domain. This increases the flexibility of the receiver and relieves the design of the baseband part, but an A/D conversion with high dynamic range and low power dissipation is required. BP ΔΣ modulators are capable of converting a high-frequency narrow band signal and are therefore suitable for signal digitization in an IF receiver. First, the theory of BP ΔΣ modulators is introduced. It has been determined that resonators are the most critical circuit blocks in the implementation of a high performance BP ΔΣ modulator. Different DT resonator topologies are studied and a double-delay (DD) resonator is found to be the best candidate for a high quality resonator. A new DD switched-capacitor (SC) resonator structure has been designed. Furthermore, two evolution versions of the designed SC resonator are presented and their nonidealities are analyzed. The three designed DD SC resonator structures are a main point of the thesis, together with the experimental results. Five different DT BP ΔΣ modulator circuit structures have been implemented and measured. All three of the designed SC resonators are used in the implemented circuits. The experimental work consists of both single-bit and multi-bit structures, as well as both single-loop and cascade architectures. The circuits have been implemented with a 0.35 μm (Bi)CMOS technology and operate with a 3.0 V supply. The measured maximum signal-to-noise-and-distortion ratios (SNDRs) are 78 dB over 270 kHz (GSM), 75 dB over 1.25 MHz (IS-95), 69 dB over 1.762 MHz (DECT), and 48 dB over 3.84 MHz (WCDMA) bandwidths using a 60 MHz IF signal.reviewe