Low Power Memory/Memristor Devices and Systems

This reprint focusses on achieving low-power computation using memristive devices. The topic was designed as a convenient reference point: it contains a mix of techniques starting from the fundamental manufacturing of memristive devices all the way to applications such as physically unclonable functions, and also covers perspectives on, e.g., in-memory computing, which is inextricably linked with emerging memory devices such as memristors. Finally, the reprint contains a few articles representing how other communities (from typical CMOS design to photonics) are fighting on their own fronts in the quest towards low-power computation, as a comparison with the memristor literature. We hope that readers will enjoy discovering the articles within

Timing-driven physical design for VLSI circuits using resonant rotary clocking

Paper presented at the Midwest Symposium on Circuits and Systems, San Juan, Puerto Rico.Resonant clocking technologies are next-generation clocking technologies that provide low or controllable-skew, low-jitter and multi-gigahertz frequency clock signals with low power consumption. This paper describes a collection of circuit partitioning, placement and synchronization methodologies that enables the implementation of high speed, low power circuits synchronized with the resonant rotary clocking technology. Resonant rotary clocking technology inherently supports (and requires) non-zero clock skew operation, which permits further improved circuit performances. The proposed physical design flow entails integrated circuit partitioning and placement methodologies that permit the hierarchical application of non-zero clock skew system timing. This design flow is shown to be a computationally efficient implementation method

BOOLEAN AND BRAIN-INSPIRED COMPUTING USING SPIN-TRANSFER TORQUE DEVICES

Several completely new approaches (such as spintronic, carbon nanotube, graphene, TFETs, etc.) to information processing and data storage technologies are emerging to address the time frame beyond current Complementary Metal-Oxide-Semiconductor (CMOS) roadmap. The high speed magnetization switching of a nano-magnet due to current induced spin-transfer torque (STT) have been demonstrated in recent experiments. Such STT devices can be explored in compact, low power memory and logic design. In order to truly leverage STT devices based computing, researchers require a re-think of circuit, architecture, and computing model, since the STT devices are unlikely to be drop-in replacements for CMOS. The potential of STT devices based computing will be best realized by considering new computing models that are inherently suited to the characteristics of STT devices, and new applications that are enabled by their unique capabilities, thereby attaining performance that CMOS cannot achieve. The goal of this research is to conduct synergistic exploration in architecture, circuit and device levels for Boolean and brain-inspired computing using nanoscale STT devices. Specifically, we first show that the non-volatile STT devices can be used in designing configurable Boolean logic blocks. We propose a spin-memristor threshold logic (SMTL) gate design, where memristive cross-bar array is used to perform current mode summation of binary inputs and the low power current mode spintronic threshold device carries out the energy efficient threshold operation. Next, for brain-inspired computing, we have exploited different spin-transfer torque device structures that can implement the hard-limiting and soft-limiting artificial neuron transfer functions respectively. We apply such STT based neuron (or ‘spin-neuron’) in various neural network architectures, such as hierarchical temporal memory and feed-forward neural network, for performing “human-like” cognitive computing, which show more than two orders of lower energy consumption compared to state of the art CMOS implementation. Finally, we show the dynamics of injection locked Spin Hall Effect Spin-Torque Oscillator (SHE-STO) cluster can be exploited as a robust multi-dimensional distance metric for associative computing, image/ video analysis, etc. Our simulation results show that the proposed system architecture with injection locked SHE-STOs and the associated CMOS interface circuits can be suitable for robust and energy efficient associative computing and pattern matching

Design of variation-tolerant synchronizers for multiple clock and voltage domains

PhD ThesisParametric variability increasingly affects the performance of electronic circuits as the fabrication technology has reached the level of 32nm and beyond. These parameters may include transistor Process parameters (such as threshold voltage), supply Voltage and Temperature (PVT), all of which could have a significant impact on the speed and power consumption of the circuit, particularly if the variations exceed the design margins. As systems are designed with more asynchronous protocols, there is a need for highly robust synchronizers and arbiters. These components are often used as interfaces between communication links of different timing domains as well as sampling devices for asynchronous inputs coming from external components. These applications have created a need for new robust designs of synchronizers and arbiters that can tolerate process, voltage and temperature variations. The aim of this study was to investigate how synchronizers and arbiters should be designed to tolerate parametric variations. All investigations focused mainly on circuit-level and transistor level designs and were modeled and simulated in the UMC90nm CMOS technology process. Analog simulations were used to measure timing parameters and power consumption along with a “Monte Carlo” statistical analysis to account for process variations. Two main components of synchronizers and arbiters were primarily investigated: flip-flop and mutual-exclusion element (MUTEX). Both components can violate the input timing conditions, setup and hold window times, which could cause metastability inside their bistable elements and possibly end in failures. The mean-time between failures is an important reliability feature of any synchronizer delay through the synchronizer. The MUTEX study focused on the classical circuit, in addition to a number of tolerance, based on increasing internal gain by adding current sources, reducing the capacitive loading, boosting the transconductance of the latch, compensating the existing Miller capacitance, and adding asymmetry to maneuver the metastable point. The results showed that some circuits had little or almost no improvements, while five techniques showed significant improvements by reducing τ and maintaining high tolerance. Three design approaches are proposed to provide variation-tolerant synchronizers. wagging synchronizer proposed to First, the is significantly increase reliability over that of the conventional two flip-flop synchronizer. The robustness of the wagging technique can be enhanced by using robust τ latches or adding one more cycle of synchronization. The second approach is the Metastability Auto-Detection and Correction (MADAC) latch which relies on swiftly detecting a metastable event and correcting it by enforcing the previously stored logic value. This technique significantly reduces the resolution time down from uncertain synchronization technique is proposed to transfer signals between Multiple- Voltage Multiple-Clock Domains (MVD/MCD) that do not require conventional level-shifters between the domains or multiple power supplies within each domain. This interface circuit uses a synchronous set and feedback reset protocol which provides level-shifting and synchronization of all signals between the domains, from a wide range of voltage-supplies and clock frequencies. Overall, synchronizer circuits can tolerate variations to a greater extent by employing the wagging technique or using a MADAC latch, while MUTEX tolerance can suffice with small circuit modifications. Communication between MVD/MCD can be achieved by an asynchronous handshake without a need for adding level-shifters.The Saudi Arabian Embassy in London, Umm Al-Qura University, Saudi Arabi

Design and Simulation of Vertical Grating Coupler for Photonic Integrated System-in-Package

Projecte final de carrera fet en col.laboració amb Technische Universität BerlinAs we approach the limits in operating speed of IC’s predicted by Moore’s Law, some alternative way of increasing velocities while reducing dimensions has to be found. In this context, optical interconnects appear to be an optimal solution that avoids the main limitations that electrical interconnects have. To implement these optical interconnects in the already well developed CMOS integrated environment, the System-in-Package (SiP) and the Silicon on Insulator (SOI) technologies arise as a good solution to achieve these goals. In this Thesis optical single mode strip nano waveguides and a grating coupler for vertical coupling to optical fibres are presented, designed and simulated. Their design parameters are optimized, and their performance analyzed and discussed. Firstly, the characteristics of large single mode rib waveguides and their direct butt coupling to fibres is studied. Their performance is found to be not good enough when the dimensions were reduced to under 1 μm, with losses as high as 14.5 dB. Therefore, nano strip waveguides are studied and simulated. They provide high light confinement and good propagation characteristics. Some performance characteristics (confinement factor, single mode region, effective index) are studied, for core widths in the range 100 – 600 nm. The vertical coupling of these nano strip waveguides to optical fibres by means of a grating coupler is simulated with the FDTD technique. The main design parameters of this grating coupler are optimized, obtaining losses of 7 dB for TE polarisation and 8.5 dB for TM. The misalignment tolerances are also analysed. The crosstalk effects between this grating and an hypothetical underlying waveguide are studied, showing that no light couples to the lower waveguide

Transient simulation of complex electronic circuits and systems operating at ultra high frequencies

The electronics industry worldwide faces increasingly difficult challenges in a bid to produce ultra-fast, reliable and inexpensive electronic devices. Electronic manufacturers rely on the Electronic Design Automation (EDA) industry to produce consistent Computer A id e d Design (CAD) simulation tools that w ill enable the design of new high-performance integrated circuits (IC), the key component of a modem electronic device. However, the continuing trend towards increasing operational frequencies and shrinking device sizes raises the question of the capability of existing circuit simulators to accurately and efficiently estimate circuit behaviour. The principle objective of this thesis is to advance the state-of-art in the transient simulation of complex electronic circuits and systems operating at ultra high frequencies. Given a set of excitations and initial conditions, the research problem involves the determination of the transient response o f a high-frequency complex electronic system consisting of linear (interconnects) and non-linear (discrete elements) parts with greatly improved efficien cy compared to existing methods and with the potential for very high accuracy in a way that permits an effective trade-off between accuracy and computational complexity. High-frequency interconnect effects are a major cause of the signal degradation encountered b y a signal propagating through linear interconnect networks in the modem IC. Therefore, the development of an interconnect model that can accurately and efficiently take into account frequency-dependent parameters of modem non-uniform interconnect is of paramount importance for state-of-art circuit simulators. Analytical models and models based on a set of tabulated data are investigated in this thesis. Two novel, h igh ly accurate and efficient interconnect simulation techniques are developed. These techniques combine model order reduction methods with either an analytical resonant model or an interconnect model generated from frequency-dependent sparameters derived from measurements or rigorous full-wave simulation. The latter part o f the thesis is concerned with envelope simulation. The complex mixture of profoundly different analog/digital parts in a modern IC gives rise to multitime signals, where a fast changing signal arising from the digital section is modulated by a slower-changing envelope signal related to the analog part. A transient analysis of such a circuit is in general very time-consuming. Therefore, specialised methods that take into account the multi-time nature o f the signal are required. To address this issue, a novel envelope simulation technique is developed. This technique combines a wavelet-based collocation method with a multi-time approach to result in a novel simulation technique that enables the desired trade-off between the required accuracy and computational efficiency in a simple and intuitive way. Furthermore, this new technique has the potential to greatly reduce the overall design cycle

Hierarchical Associative Memory Based on Oscillatory Neural Network

In this thesis we explore algorithms and develop architectures based on emerging nano-device technologies for cognitive computing tasks such as recognition, classification, and vision. In particular we focus on pattern matching in high dimensional vector spaces to address the nearest neighbor search problem. Recent progress in nanotechnology provides us novel nano-devices with special nonlinear response characteristics that fit cognitive tasks better than general purpose computing. We build an associative memory (AM) by weakly coupling nano-oscillators as an oscillatory neural network and design a hierarchical tree structure to organize groups of AM units. For hierarchical recognition, we first examine an architecture where image patterns are partitioned into different receptive fields and processed by individual AM units in lower levels, and then abstracted using sparse coding techniques for recognition at higher levels. A second tree structure model is developed as a more scalable AM architecture for large data sets. In this model, patterns are classified by hierarchical k-means clustering and organized in hierarchical clusters. Then the recognition process is done by comparison between the input patterns and centroids identified in the clustering process. The tree is explored in a "depth-only" manner until the closest image pattern is output. We also extend this search technique to incorporate a branch-and-bound algorithm. The models and corresponding algorithms are tested on two standard face recognition data-sets. We show that the depth-only hierarchical model is very data-set dependent and performs with 97% or 67% recognition when compared to a single large associative memory, while the branch and bound search increases time by only a factor of two compared to the depth-only search

Proximitized Materials

Advances in scaling down heterostructures and having an improved interface quality together with atomically-thin two-dimensional materials suggest a novel approach to systematically design materials. A given material can be transformed through proximity effects whereby it acquires properties of its neighbors, for example, becoming superconducting, magnetic, topologically nontrivial, or with an enhanced spin-orbit coupling. Such proximity effects not only complement the conventional methods of designing materials by doping or functionalization, but can also overcome their various limitations. In proximitized materials it is possible to realize properties that are not present in any constituent region of the considered heterostructure. While the focus is on magnetic and spin-orbit proximity effects with their applications in spintronics, the outlined principles provide also a broader framework for employing other proximity effects to tailor materials and realize novel phenomena.Comment: Invited Review to appear in Materials Today, 28 pages, 22 figure