201 research outputs found

    High-Density Solid-State Memory Devices and Technologies

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    This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms

    Study of the impact of lithography techniques and the current fabrication processes on the design rules of tridimensional fabrication technologies

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    Working for the photolithography tool manufacturer leader sometimes gives me the impression of how complex and specific is the sector I am working on. This master thesis topic came with the goal of getting the overall picture of the state-of-the-art: stepping out and trying to get a helicopter view usually helps to understand where a process is in the productive chain, or what other firms and markets are doing to continue improvingUniversidad de sevilla.Máster Universitario en Microelectrónica: Diseño y Aplicaciones de Sistemas Micro/Nanométrico

    Manufacturing of three dimensional integrated circuits

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    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2007.Includes bibliographical references (p. 221-231).Along with scaling down in size, novel materials have been introduced into the semiconductor industry to enable continued improvements in performance and cost as predicted by Moore's law. It has become important now more than ever to include an environmental impact evaluation of future technologies, before they are introduced into manufacturing, in order to identify potentially environmentally harmful materials or processes and understand their implications, costs, and mitigation requirements. In this thesis, we introduce a methodology to compare alternative options on the environmental axis, along with the cost and performance axes, in order to create environmentally aware and benign technologies. This methodology also helps to identify potential performance and cost issues in novel technologies by taking a transparent and bottoms-up assessment approach. This methodology is applied to the evaluation of the MIT 3D IC technology in comparison to a standard CMOS 2D IC approach. Both options are compared on all three axes - performance, cost and environmental impact.(cont.) The "handle wafer" unit process in the existing 3D IC technology, which is a crucial process for back-to-face integration, is found to have a large environmental impact because of its use of thick metal sacrificial layers and high energy consumption. We explore three different handle wafer options, between-die channel, oxide release layer, and alternative low-temperature permanent bonding. The first two approaches use a chemical handle wafer release mechanism; while the third explores solid liquid inter-diffusion (SLID) bonding using copper-indium at 2000C. Preliminary results for copper-indium bonding indicate that a sub-micron thick multi-layer copper-indium stack, when bonded to a 300 nm thick copper film results in large voids in the bonding interface primarily due to rough as-deposited films. Finally, we conduct an overall assessment of these and other proposed handle wafer technologies. The overall assessment shows that but the oxide release layer approach appears promising; however, each process option has its strength and weaknesses, which need to be understood and pursued accordingly.by Ajay Somani.Ph.D

    Book of Knowledge (BOK) for NASA Electronic Packaging Roadmap

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    The objective of this document is to update the NASA roadmap on packaging technologies (initially released in 2007) and to present the current trends toward further reducing size and increasing functionality. Due to the breadth of work being performed in the area of microelectronics packaging, this report presents only a number of key packaging technologies detailed in three industry roadmaps for conventional microelectronics and a more recently introduced roadmap for organic and printed electronics applications. The topics for each category were down-selected by reviewing the 2012 reports of the International Technology Roadmap for Semiconductor (ITRS), the 2013 roadmap reports of the International Electronics Manufacturing Initiative (iNEMI), the 2013 roadmap of association connecting electronics industry (IPC), the Organic Printed Electronics Association (OE-A). The report also summarizes the results of numerous articles and websites specifically discussing the trends in microelectronics packaging technologies

    MICROELECTRONICS PACKAGING TECHNOLOGY ROADMAPS, ASSEMBLY RELIABILITY, AND PROGNOSTICS

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    This paper reviews the industry roadmaps on commercial-off-the shelf (COTS) microelectronics packaging technologies covering the current trends toward further reducing size and increasing functionality. Due tothe breadth of work being performed in this field, this paper presents only a number of key packaging technologies. The topics for each category were down-selected by reviewing reports of industry roadmaps including the International Technology Roadmap for Semiconductor (ITRS) and by surveying publications of the International Electronics Manufacturing Initiative (iNEMI) and the roadmap of association connecting electronics industry (IPC). The paper also summarizes the findings of numerous articles and websites that allotted to the emerging and trends in microelectronics packaging technologies. A brief discussion was presented on packaging hierarchy from die to package and to system levels. Key elements of reliability for packaging assemblies were presented followed by reliabilty definition from a probablistic failure perspective. An example was present for showing conventional reliability approach using Monte Carlo simulation results for a number of plastic ball grid array (PBGA). The simulation results were compared to experimental thermal cycle test data. Prognostic health monitoring (PHM) methods, a growing field for microelectronics packaging technologies, were briefly discussed. The artificial neural network (ANN), a data-driven PHM, was discussed in details. Finally, it presented inter- and extra-polations using ANN simulation for thermal cycle test data of PBGA and ceramic BGA (CBGA) assemblies

    Characterization of Flexible Hybrid Electronics Using Stretchable Silver Ink and Ultra-Thin Silicon Die

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    Flexible Hybrid Electronics (FHEs) offer many advantages to the future of wearable technology. By combining the dynamic performance of conductive inks, and the functionality of ultra-thinned, traditional IC technology, new FHE devices allow for development of applications previously excluded by relying on a specific type of electronics technology. The characterization and reliability analysis of stretchable conductive inks paired with ultra-thin silicon die in theµm range was conducted. A silver based ink designed to be stretchable was screen printed on a TPU substrate and cured using box oven, conveyor convection oven, and photonic curing processes. Reliability tests were conducted including a tape test, crease test, wash test, and abrasion test. Optimization of each curing process resulted in all three methods’ ability to achieve the ink sheet resistance specification of \u3c75mΩ/square/25µm. Reliability tests on the printing concluded that, if fully cured, all samples achieve similar reliability performance. Additionally, a series of 10 mm x 10 mm ultra-thin die were characterized using stylus profilometry and optical measurement in order to test the die quality and readiness for assembly. The die had been thinned from an initial thickness down of 600 µm to a target of 50 µm. A direct inverse relationship was shown between die thickness and die warpage, likely due to high levels of internal stress caused by the dicing and thinning process. Finally, an innovate pairing of serpentine copper clad traces on TPU was tested for reliability performance using traditional solder for die attachment

    Technical Design Report for the PANDA Micro Vertex Detector

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    This document illustrates the technical layout and the expected performance of the Micro Vertex Detector (MVD) of the PANDA experiment. The MVD will detect charged particles as close as possible to the interaction zone. Design criteria and the optimisation process as well as the technical solutions chosen are discussed and the results of this process are subjected to extensive Monte Carlo physics studies. The route towards realisation of the detector is outlined

    Silicon-based opto-electronic integration for high bandwidth density optical interconnects

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