3D advanced integration technology for heterogeneous systems

International audience3D integration technology is nowadays mature enough, offering today further system integration using heterogeneous technologies, with already many different industrial successes (Imagers, 2.5D Interposers, 3D Memory Cube, etc.). CEA-LETI has been developing for a decade 3D integration, and have pursued research in both directions: developing advanced 3D technology bricks (TSVs, µ-bumps, Hybrid Bonding, etc), and designing advanced 3D circuits as pioneer prototypes. In this paper, a short overview of some recent advanced 3D technology results is presented, including some latest 3D circuit's description

Heterogeneous 2.5D integration on through silicon interposer

© 2015 AIP Publishing LLC. Driven by the need to reduce the power consumption of mobile devices, and servers/data centers, and yet continue to deliver improved performance and experience by the end consumer of digital data, the semiconductor industry is looking for new technologies for manufacturing integrated circuits (ICs). In this quest, power consumed in transferring data over copper interconnects is a sizeable portion that needs to be addressed now and continuing over the next few decades. 2.5D Through-Si-Interposer (TSI) is a strong candidate to deliver improved performance while consuming lower power than in previous generations of servers/data centers and mobile devices. These low-power/high-performance advantages are realized through achievement of high interconnect densities on the TSI (higher than ever seen on Printed Circuit Boards (PCBs) or organic substrates), and enabling heterogeneous integration on the TSI platform where individual ICs are assembled at close proximity

Cross-Layer Pathfinding for Off-Chip Interconnects

Off-chip interconnects for integrated circuits (ICs) today induce a diverse design space, spanning many different applications that require transmission of data at various bandwidths, latencies and link lengths. Off-chip interconnect design solutions are also variously sensitive to system performance, power and cost metrics, while also having a strong impact on these metrics. The costs associated with off-chip interconnects include die area, package (PKG) and printed circuit board (PCB) area, technology and bill of materials (BOM). Choices made regarding off-chip interconnects are fundamental to product definition, architecture, design implementation and technology enablement. Given their cross-layer impact, it is imperative that a cross-layer approach be employed to architect and analyze off-chip interconnects up front, so that a top-down design flow can comprehend the cross-layer impacts and correctly assess the system performance, power and cost tradeoffs for off-chip interconnects. Chip architects are not exposed to all the tradeoffs at the physical and circuit implementation or technology layers, and often lack the tools to accurately assess off-chip interconnects. Furthermore, the collaterals needed for a detailed analysis are often lacking when the chip is architected; these include circuit design and layout, PKG and PCB layout, and physical floorplan and implementation. To address the need for a framework that enables architects to assess the system-level impact of off-chip interconnects, this thesis presents power-area-timing (PAT) models for off-chip interconnects, optimization and planning tools with the appropriate abstraction using these PAT models, and die/PKG/PCB co-design methods that help expose the off-chip interconnect cross-layer metrics to the die/PKG/PCB design flows. Together, these models, tools and methods enable cross-layer optimization that allows for a top-down definition and exploration of the design space and helps converge on the correct off-chip interconnect implementation and technology choice. The tools presented cover off-chip memory interfaces for mobile and server products, silicon photonic interfaces, 2.5D silicon interposers and 3D through-silicon vias (TSVs). The goal of the cross-layer framework is to assess the key metrics of the interconnect (such as timing, latency, active/idle/sleep power, and area/cost) at an appropriate level of abstraction by being able to do this across layers of the design flow. In additional to signal interconnect, this thesis also explores the need for such cross-layer pathfinding for power distribution networks (PDN), where the system-on-chip (SoC) floorplan and pinmap must be optimized before the collateral layouts for PDN analysis are ready. Altogether, the developed cross-layer pathfinding methodology for off-chip interconnects enables more rapid and thorough exploration of a vast design space of off-chip parallel and serial links, inter-die and inter-chiplet links and silicon photonics. Such exploration will pave the way for off-chip interconnect technology enablement that is optimized for system needs. The basis of the framework can be extended to cover other interconnect technology as well, since it fundamentally relates to system-level metrics that are common to all off-chip interconnects

3D Integration: Another Dimension Toward Hardware Security

We review threats and selected schemes concerning hardware security at design and manufacturing time as well as at runtime. We find that 3D integration can serve well to enhance the resilience of different hardware security schemes, but it also requires thoughtful use of the options provided by the umbrella term of 3D integration. Toward enforcing security at runtime, we envision secure 2.5D system-level integration of untrusted chips and "all around" shielding for 3D ICs.Comment: IEEE IOLTS 201

A DLL Based Test Solution for 3D ICs

Integrated circuits (ICs) are rapidly changing and vertical integration and packaging strategies have already become an important research topic. 2.5D and 3D IC integrations have obvious advantages over the conventional two dimensional IC implementations in performance, capacity, and power consumption. A passive Si interposer utilizing Through-Silicon via (TSV) technology is used for 2.5D IC integration. TSV is also the enabling technology for 3D IC integration. TSV manufacturing defects can affect the performance of stacked devices and reduce the yield. Manufacturing test methodologies for TSVs have to be developed to ensure fault-free devices. This thesis presents two test methods for TSVs in 2.5D and 3D ICs utilizing Delay-Locked Loop (DLL) modules. In the test method developed for TSVs in 2.5D ICs, a DLL is used to determine the propagation delay for fault detection. TSV faults in 3D ICs are detected through observation of the control voltage of a DLL. The proposed test methods present a robust performance against Process, supply Voltage and Temperature (PVT) variations due to the inherent feedback of DLLs. 3D full-wave simulations are performed to extract circuit level models for TSVs and fragments of an interposer wires using HFSS simulation tools. The extracted TSV models are then used to perform circuit level simulations using ADS tools from Agilent. Simulation results indicate that the proposed test solution for TSVs can detect manufacturing defects affecting the TSV propagation delay

US Microelectronics Packaging Ecosystem: Challenges and Opportunities

The semiconductor industry is experiencing a significant shift from traditional methods of shrinking devices and reducing costs. Chip designers actively seek new technological solutions to enhance cost-effectiveness while incorporating more features into the silicon footprint. One promising approach is Heterogeneous Integration (HI), which involves advanced packaging techniques to integrate independently designed and manufactured components using the most suitable process technology. However, adopting HI introduces design and security challenges. To enable HI, research and development of advanced packaging is crucial. The existing research raises the possible security threats in the advanced packaging supply chain, as most of the Outsourced Semiconductor Assembly and Test (OSAT) facilities/vendors are offshore. To deal with the increasing demand for semiconductors and to ensure a secure semiconductor supply chain, there are sizable efforts from the United States (US) government to bring semiconductor fabrication facilities onshore. However, the US-based advanced packaging capabilities must also be ramped up to fully realize the vision of establishing a secure, efficient, resilient semiconductor supply chain. Our effort was motivated to identify the possible bottlenecks and weak links in the advanced packaging supply chain based in the US.Comment: 22 pages, 8 figure

De-embedding method for electrical response extraction of through-silicon via (TSV) in silicon interposer technology and signal integrity performance comparison with embedded multi-die interconnect bridge (EMIB) technology

Traditional two-dimensional system-in-package (2D SiP) can no longer support the scaling of size, power, bandwidth, and cost at the same rate required by Moore\u27s Law. Three-dimensional integrated circuits (3D-ICs), 2.5D silicon interposer technology in which through silicon vias are widely used, are implemented to meet these challenges. Embedded multi-die interconnect bridge (EMIB) technology are proposed as well. In Section 1, a novel de-embedding method is proposed for TSV characterization by using a set of simple yet efficient test patterns. Full wave models and corresponding equivalent circuits are provided to explain the electrical performance of the test patterns clearly. Furthermore, broadband measurement is performed for all test patterns up to 40 GHz, to verify the accuracy of the developed full wave models. Scanning Electron Microscopy (SEM) measurements are taken for all the test patterns to optimize the full wave models. Finally, the proposed de-embedding method is applied to extract the response of the TSV pair. Good agreement between the de-embedded results with analytical characterization and the full-wave simulation for a single TSV pair indicates that the proposed de-embedding method works effectively up to 40 GHz. In Section 2, the signal integrity performance of EMIB technology is evaluated and compared with silicon interposer technology. Two examples are available for each technology, one is simple with only one single trace pair considered; the other is complex with three differential pairs considered in the full wave simulation. Results of insertion loss, return loss, crosstalk and eye diagram are provided as criteria to evaluate the signal integrity performance for both technologies. This work provides guidelines to both top-level decision and specific IC or channel design --Abstract, page iii

Development of Silicon Photonic Multi Chip Module Transceivers

The exponential growth of data generation–driven in part by the proliferation of applications such as high definition streaming, artificial intelligence, and the internet of things–presents an impending bottleneck for electrical interconnects to fulfill data center bandwidth demands. Links now require bandwidths in excess of multiple Tbps while operating on the order of picojoules per bit, in addition to constraints on areal bandwidth densities and pin I/O bandwidth densities. Optical communications built on a silicon photonic platform offers a potential solution to develop power efficient, high bandwidth, low attenuation, small footprint links, all while building off the mature CMOS ecosystem. The development of silicon photonic foundries supporting multi project wafer runs with associated process design kit components supports a path towards widespread commercial production by increasing production volume while reducing fabrication and development costs. While silicon photonics can always be improved in terms of performance and yield, one of the central challenges is the integration of the silicon photonic integrated circuits with the driving electronic integrated circuits and data generating compute nodes such as CPUs, FPGAs, and ASICs. The co-packaging of the photonics with the electronics is crucial for adoption of silicon photonics in datacenters, as improper integration negates all the potential benefits of silicon photonics. The work in this dissertation is centered around the development of silicon photonic multi chip module transceivers to aid in the deployment of silicon photonics within data centers. Section one focuses on silicon photonic integration and highlights multiple integrated transceiver prototypes. The central prototype features a photonic integrated circuit with bus waveguides with WDM microdisk modulators for the transmitter and WDM demuxes with drop ports to photodiodes for the receiver. The 2.5D integrated prototype utilizes a thinned silicon interposer and TIA electronic integrated circuits. The architecture, integration, characterization, performance, and scalability of the prototype are discussed. The development of this first prototype identified key design considerations necessary for designing multi chip module silicon photonic prototypes, which will be addressed in this section. Finally, other multi chip module silicon photonic prototypes will be overviewed. These include a 2.5D integrated transceiver with a different electronic integrated circuit TIA, a 3D integrated receiver, an active interposer network on chip, and a 2.5D integrated transceiver with custom electronic integrated circuits. Section two focuses on research that supports the development of silicon photonic transceivers. The thermal crosstalk from neighboring microdisk modulators as a function of modulator pitch is investigated. As modulators are placed at denser pitches to accommodate areal bandwidth density requirements in transceivers, this thermal crosstalk will become significant. In this section, designs and results from several iterations of custom microring modulators are reported. Custom microring modulators allow for scaling up the number of channels in microring transceivers by offering the ability to fabricate variable resonances and provide a platform for further innovation in bandwidth, free spectral range, and energy efficiency. The designs and results of higher order modulation format modulators, both microring based and Mach Zehnder based, are discussed. High order modulators offer a path towards scaling transceiver total throughput without having to increase the channel counts or component bandwidth. Together, the work in these two sections supports the development of silicon photonic transceivers to aid in the adoption of silicon photonics into data generating systems

Design, Extraction, and Optimization Tool Flows and Methodologies for Homogeneous and Heterogeneous Multi-Chip 2.5D Systems

Chip and packaging industries are making significant progress in 2.5D design as a result of increasing popularity of their application. In advanced high-density 2.5D packages, package redistribution layers become similar to chip Back-End-of-Line routing layers, and the gap between them scales down with pin density improvement. Chiplet-package interactions become significant and severely affect system performance and reliability. Moreover, 2.5D integration offers opportunities to apply novel design techniques. The traditional die-by-die design approach neither carefully considers these interactions nor fully exploits the cross-boundary design opportunities. This thesis presents chiplet-package cross-boundary design, extraction, analysis, and optimization tool flows and methodologies for high-density 2.5D packaging technologies. A holistic flow is presented that can capture all parasitics from chiplets and the package and improve system performance through iterative optimizations. Several design techniques are demonstrated for agile development and quick turn-around time. To validate the flow in silicon, a chip was taped out and studied in TSMC 65nm technology. As the holistic flow cannot handle heterogeneous technologies, in-context flows are presented. Three different flavors of the in-context flow are presented, which offer trade-offs between scalability and accuracy in heterogeneous 2.5D system designs. Inductance is an inseparable part of a package design. A holistic flow is presented that takes package inductance into account in timing analysis and optimization steps. Custom CAD tools are developed to make these flows compatible with the industry standard tools and the foundry model. To prove the effectiveness of the flows several design cases of an ARM Cortex-M0 are implemented for comparitive study