Layout level design for testability strategy applied to a CMOS cell library

The layout level design for testability (LLDFT) rules used here allow to avoid some hard to detect faults or even undetectable faults on a cell library by modifying the cell layout without changing their behavior and achieving a good level of reliability. These rules avoid some open faults or reduce their appearance probability. The main purpose has been to apply that set of LLDFT rules on the cells of the library designed at the Centre Nacional de Microelectronica (CNM) in order to obtain a highly testable cell library. The authors summarize the main results (area overhead and performance degradation) of the application of the LLDFT rules on the cell

Testability enhancement of a basic set of CMOS cells

Testing should be evaluated as the ability of the test patterns to cover realistic faults, and high quality IC products demand high quality testing. We use a test strategy based on physical design for testability (to discover both open and short faults, which are difficult or even impossible to detect). Consequentially, layout level design for testability (LLDFT) rules have been developed, which prevent the faults, or at least reduce the chance of their appearing. The main purpose of this work is to apply a practical set of LLDFT rules to the library cells designed by the Centre Nacional de Microelectrònica (CNM) and obtain a highly testable cell library. The main results of the application of the LLDFT rules (area overheads and performance degradation) are summarized and the results are significant since IC design is highly repetitive; a small effort to improve cell layout can bring about great improvement in design

Defect-sensitivity analysis of an SEU immune CMOS logic family

Fault testing of resistive manufacturing defects is done on a recently developed single event upset immune logic family. Resistive ranges and delay times are compared with those of traditional CMOS logic. Reaction of the logic to these defects is observed for a NOR gate, and an evaluation of its ability to cope with them is determined

Testing of mixed-signal systems using dynamic stimuli

The impulse response of a linear circuit element contains enough information to functionally characterise that element. A technique for comparison of observed and expected (reference) transient responses, which results in an absolute measure of device functionality, is presented. Comparisons of transient response test results with the results from existing test programs are also presented

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

Testability and redundancy techniques for improved yield and reliability of CMOS VLSI circuits

The research presented in this thesis is concerned with the design of fault-tolerant integrated circuits as a contribution to the design of fault-tolerant systems. The economical manufacture of very large area ICs will necessitate the incorporation of fault-tolerance features which are routinely employed in current high density dynamic random access memories. Furthermore, the growing use of ICs in safety-critical applications and/or hostile environments in addition to the prospect of single-chip systems will mandate the use of fault-tolerance for improved reliability. A fault-tolerant IC must be able to detect and correct all possible faults that may affect its operation. The ability of a chip to detect its own faults is not only necessary for fault-tolerance, but it is also regarded as the ultimate solution to the problem of testing. Off-line periodic testing is selected for this research because it achieves better coverage of physical faults and it requires less extra hardware than on-line error detection techniques. Tests for CMOS stuck-open faults are shown to detect all other faults. Simple test sequence generation procedures for the detection of all faults are derived. The test sequences generated by these procedures produce a trivial output, thereby, greatly simplifying the task of test response analysis. A further advantage of the proposed test generation procedures is that they do not require the enumeration of faults. The implementation of built-in self-test is considered and it is shown that the hardware overhead is comparable to that associated with pseudo-random and pseudo-exhaustive techniques while achieving a much higher fault coverage through-the use of the proposed test generation procedures. The consideration of the problem of testing the test circuitry led to the conclusion that complete test coverage may be achieved if separate chips cooperate in testing each other's untested parts. An alternative approach towards complete test coverage would be to design the test circuitry so that it is as distributed as possible and so that it is tested as it performs its function. Fault correction relies on the provision of spare units and a means of reconfiguring the circuit so that the faulty units are discarded. This raises the question of what is the optimum size of a unit? A mathematical model, linking yield and reliability is therefore developed to answer such a question and also to study the effects of such parameters as the amount of redundancy, the size of the additional circuitry required for testing and reconfiguration, and the effect of periodic testing on reliability. The stringent requirement on the size of the reconfiguration logic is illustrated by the application of the model to a typical example. Another important result concerns the effect of periodic testing on reliability. It is shown that periodic off-line testing can achieve approximately the same level of reliability as on-line testing, even when the time between tests is many hundreds of hours

Investigation into voltage and process variation-aware manufacturing test

Increasing integration and complexity in IC design provides challenges for manufacturing testing. This thesis studies how process and supply voltage variation influence defect behaviour to determine the impact on manufacturing test cost and quality. The focus is on logic testing of static CMOS designs with respect to two important defect types in deep submicron CMOS: resistive bridges and full opens. The first part of the thesis addresses testing for resistive bridge defects in designs with multiple supply voltage settings. To enable analysis, a fault simulator is developed using a supply voltage-aware model for bridge defect behaviour. The analysis shows that for high defect coverage it is necessary to perform test for more than one supply voltage setting, due to supply voltage-dependent behaviour. A low-cost and effective test method is presented consisting of multi-voltage test generation that achieves high defect coverage and test set size reduction without compromise to defect coverage. Experiments on synthesised benchmarks with realistic bridge locations validate the proposed method.The second part focuses on the behaviour of full open defects under supply voltage variation. The aim is to determine the appropriate value of supply voltage to use when testing. Two models are considered for the behaviour of full open defects with and without gate tunnelling leakage influence. Analysis of the supply voltage-dependent behaviour of full open defects is performed to determine if it is required to test using more than one supply voltage to detect all full open defects. Experiments on synthesised benchmarks using an extended version of the fault simulator tool mentioned above, measure the quantitative impact of supply voltage variation on defect coverage.The final part studies the impact of process variation on the behaviour of bridge defects. Detailed analysis using synthesised ISCAS benchmarks and realistic bridge model shows that process variation leads to additional faults. If process variation is not considered in test generation, the test will fail to detect some of these faults, which leads to test escapes. A novel metric to quantify the impact of process variation on test quality is employed in the development of a new test generation tool, which achieves high bridge defect coverage. The method achieves a user-specified test quality with test sets which are smaller than test sets generated without consideration of process variation

Defect-based testing of LTS digital circuits

A Defect-Based Test (DBT) methodology for Superconductor Electronics (SCE) is presented in this thesis, so that commercial production and efficient testing of systems can be implemented in this technology in the future. In the first chapter, the features and prospects for SCE have been presented. The motivation for this research and the outline of the thesis were also described in Chapter 1. It has been shown that high-end applications such as Software-Defined Radio (SDR) and petaflop computers which are extremely difficult to implement in top-of-the-art semiconductor technologies can be realised using SCE. But, a systematic structural test methodology had yet to be developed for SCE and has been addressed in this thesis. A detailed introduction to Rapid Single-Flux Quantum (RSFQ) circuits was presented in Chapter 2. A Josephson Junction (JJ) was described with associated theory behind its operation. The JJ model used in the simulator used in this research work was also presented. RSFQ logic with logic protocols as well as the design and implementation of an example D-type flip-flop (DFF) was also introduced. Finally, advantages and disadvantages of RSFQ circuits have been discussed with focus on the latest developments in the field. Various techniques for testing RSFQ circuits were discussed in Chapter 3. A Process Defect Monitor (PDM) approach was presented for fabrication process analysis. The presented defect-monitor structures were used to gather measurement data, to find the probability of the occurrence of defects in the process which forms the first step for Inductive Fault Analysis (IFA). Results from measurements on these structures were used to create a database for defects. This information can be used as input for performing IFA. "Defect-sprinkling" over a fault-free circuit can be carried out according to the measured defect densities over various layers. After layout extraction and extensive fault simulation, the resulting information will indicate realistic faults. In addition, possible Design-for-Testability (DfT) schemes for monitoring Single-Flux Quantum (SFQ) pulses within an RSFQ circuit has also been discussed in Chapter 3. The requirement for a DfT scheme is inevitable for RSFQ circuits because of their very high frequency of operation and very low operating temperature. It was demonstrated how SFQ pulses can be monitored at an internal node of an SCE circuit, introducing observability using Test-Point Insertion (TPI). Various techniques were discussed for the introduction of DfT and to avoid the delay introduced by the DfT structure if it is required. The available features in the proposed design for customising the detector make it attractive for a detailed DBT of RSFQ circuits. The control of internal nodes has also been illustrated using TPI. The test structures that were designed and implemented to determine the occurrence of defects in the processes can also be used to locate the position for the insertion of the above mentioned DfT structures

Comparing the impact of power supply voltage on CMOS-and FinFET-based SRAMs in the presence of resistive defects

CMOS technology scaling has reached its limit at the 22 nm technology node due to several factors including Process Variations (PV), increased leakage current, Random Dopant Fluctuation (RDF), and mainly the Short-Channel Effect (SCE). In order to continue the miniaturization process via technology down-scaling while preserving system reliability and performance, Fin Field-Effect Transistors (FinFETs) arise as an alternative to CMOS transistors. In parallel, Static Random-Access Memories (SRAMs) increasingly occupy great part of Systems-on-Chips’ (SoCs) silicon area, making their reliability an important issue. SRAMs are designed to reach densities at the limit of the manufacturing process, making this component susceptible to manufacturing defects, including the resistive ones. Such defects may cause dynamic faults during the circuits’ lifetime, an important cause of test escape. Thus, the identification of the proper faulty behavior taking different operating conditions into account is considered crucial to guarantee the development of more suitable test methodologies. In this context, a comparison between the behavior of a 22 nm CMOS-based and a 20 nm FinFET-based SRAM in the presence of resistive defects is carried out considering different power supply voltages. In more detail, the behavior of defective cells operating under different power supply voltages has been investigated performing SPICE simulations. Results show that the power supply voltage plays an important role in the faulty behavior of both CMOS- and FinFET-based SRAM cells in the presence of resistive defects but demonstrate to be more expressive when considering the FinFET-based memories. Studying different operating temperatures, the results show an expressively higher occurrence of dynamic faults in FinFET-based SRAMs when compared to CMOS technology