2,421 research outputs found
Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions
We demonstrate efficient spin-polarized tunneling between a ferromagnetic
metal and a ferromagnetic semiconductor with highly mismatched conductivities.
This is indicated by a large tunneling magnetoresistance (up to 30%) at low
temperatures in epitaxial magnetic tunnel junctions composed of a ferromagnetic
metal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by a
nonmagnetic semiconductor (AlAs). Analysis of the current-voltage
characteristics yields detailed information about the asymmetric tunnel
barrier. The low temperature conductance-voltage characteristics show a zero
bias anomaly and a V^1/2 dependence of the conductance, indicating a
correlation gap in the density of states of GaMnAs. These experiments suggest
that MnAs/AlAs heterostructures offer well characterized tunnel junctions for
high efficiency spin injection into GaAs.Comment: 14 pages, submitted to Phys. Rev.
Spintronics: Fundamentals and applications
Spintronics, or spin electronics, involves the study of active control and
manipulation of spin degrees of freedom in solid-state systems. This article
reviews the current status of this subject, including both recent advances and
well-established results. The primary focus is on the basic physical principles
underlying the generation of carrier spin polarization, spin dynamics, and
spin-polarized transport in semiconductors and metals. Spin transport differs
from charge transport in that spin is a nonconserved quantity in solids due to
spin-orbit and hyperfine coupling. The authors discuss in detail spin
decoherence mechanisms in metals and semiconductors. Various theories of spin
injection and spin-polarized transport are applied to hybrid structures
relevant to spin-based devices and fundamental studies of materials properties.
Experimental work is reviewed with the emphasis on projected applications, in
which external electric and magnetic fields and illumination by light will be
used to control spin and charge dynamics to create new functionalities not
feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes
from the published versio
Spin Electronics and Spin Computation
We review several proposed spintronic devices that can provide new
functionality or improve available functions of electronic devices. In
particular, we discuss a high mobility field effect spin transistor, an
all-metal spin transistor, and our recent proposal of an all-semiconductor spin
transistor and a spin battery. We also address some key issues in
spin-polarized transport, which are relevant to the feasibility and operation
of hybrid semiconductor devices. Finally, we discuss a more radical aspect of
spintronic research--the spin-based quantum computation and quantum information
processing.Comment: 17 pages, 3 figure
Vertical spinal electronic device with large room temperature magnetoresistance
We report experimental transport measurements of a vertical hybrid ferromagnetic (FM)/III-V semiconductor (SC)/ferromagnetic(FM) type structure, i.e., Cr(20ML)/Co(15ML)/GaAs(50 nm, n-type)/Al/sub 0.3/Ga/sub 0.7/As(200 nm, n-type)/FeNi(30 nm). The current-voltage (I-V) characteristics reveal Schottky/tunneling type behavior in the direction of FeNi/Semiconductor/Co and observed to be dependent on external magnetic field. The magnetoresistance (MR) behavior shows a strong dependence on the measured current and field. At low fields no significant change in MR has been observed with increasing current. However, at high fields the MR initially increases with increasing current and becomes stable beyond a critical current of 10 /spl mu/A. A maximum of 12% change in the MR has been observed at room temperature, which is far larger than that of the conventional AMR effect. This property of the device could be utilized as field sensors or magnetic logic devices
A Brief Review of Ferroelectric Control of Magnetoresistance in Organic Spin Valves
Magnetoelectric coupling has been a trending research topic in both organic
and inorganic materials and hybrids. The concept of controlling magnetism using
an electric field is particularly appealing in energy efficient applications.
In this spirit, ferroelectricity has been introduced to organic spin valves to
manipulate the magneto transport, where the spin transport through the
ferromagnet/organic spacer interfaces (spinterface) are under intensive study.
The ferroelectric materials in the organic spin valves provide a knob to vary
the interfacial energy alignment and the interfacial crystal structures, both
are critical for the spin transport. In this review, we first go over the basic
concepts of spin transport in organic spin valves. Then we introduce the recent
efforts of controlling magnetoresistance of organic spin valves using
ferroelectricity, where the ferroelectric material is either inserted as an
interfacial layer or used as a spacer material. The realization of the
ferroelectric control of magneto transport in organic spin valve, advances our
understanding in the spin transport through the ferromagnet/organic interface
and suggests more functionality of organic spintronic devices
Graphene Spintronics
The isolation of graphene has triggered an avalanche of studies into the
spin-dependent physical properties of this material, as well as graphene-based
spintronic devices. Here we review the experimental and theoretical
state-of-art concerning spin injection and transport, defect-induced magnetic
moments, spin-orbit coupling and spin relaxation in graphene. Future research
in graphene spintronics will need to address the development of applications
such as spin transistors and spin logic devices, as well as exotic physical
properties including topological states and proximity-induced phenomena in
graphene and other 2D materials.Comment: 47 Pages, 6 figure
Bipolar spintronics: From spin injection to spin-controlled logic
An impressive success of spintronic applications has been typically realized
in metal-based structures which utilize magnetoresistive effects for
substantial improvements in the performance of computer hard drives and
magnetic random access memories. Correspondingly, the theoretical understanding
of spin-polarized transport is usually limited to a metallic regime in a linear
response, which, while providing a good description for data storage and
magnetic memory devices, is not sufficient for signal processing and digital
logic. In contrast, much less is known about possible applications of
semiconductor-based spintronics and spin-polarized transport in related
structures which could utilize strong intrinsic nonlinearities in
current-voltage characteristics to implement spin-based logic. Here we discuss
the challenges for realizing a particular class of structures in semiconductor
spintronics: our proposal for bipolar spintronic devices in which carriers of
both polarities (electrons and holes) contribute to spin-charge coupling. We
formulate the theoretical framework for bipolar spin-polarized transport, and
describe several novel effects in two- and three-terminal structures which
arise from the interplay between nonequilibrium spin and equilibrium
magnetization.Comment: 16 pages, 7 figure
All-electrical measurement of spin injection in a magnetic - junction diode
Magnetic - junction diodes are fabricated to investigate spin-polarized
electron transport. The injection of spin-polarized electrons in a
semiconductor is achieved by driving a current from a ferromagnetic injector
(Fe), into a bulk semiconductor (-GaAs) via schottky contact. For detection,
a diluted magnetic semiconductor (-GaMnAs) layer is used. Clear
magnetoresistance was observed only when a high forward bias was applied across
the - junction.Comment: 4 pages, 4 figure
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