A silicon model of auditory localization

The barn owl accurately localizes sounds in the azimuthal plane, using interaural time difference as a cue. The time-coding pathway in the owl's brainstem encodes a neural map of azimuth, by processing interaural timing information. We have built a silicon model of the time-coding pathway of the owl. The integrated circuit models the structure as well as the function of the pathway; most subcircuits in the chip have an anatomical correlate. The chip computes all outputs in real time, using analog, continuous-time processing

Gain Modulation by Corticostriatal and Thalamostriatal Input Signals during Reward-Conditioned Behavior.

The cortex and thalamus send excitatory projections to the striatum, but little is known about how these inputs, either individually or collectively, regulate striatal dynamics during behavior. The lateral striatum receives overlapping input from the secondary motor cortex (M2), an area involved in licking, and the parafascicular thalamic nucleus (PF). Using neural recordings, together with optogenetic terminal inhibition, we examine the contribution of M2 and PF projections on medium spiny projection neuron (MSN) activity as mice performed an anticipatory licking task. Each input has a similar contribution to striatal activity. By comparing how suppressing single or multiple projections altered striatal activity, we find that cortical and thalamic input signals modulate MSN gain and that this effect is more pronounced in a temporally specific period of the task following the cue presentation. These results demonstrate that cortical and thalamic inputs synergistically regulate striatal output during reward-conditioned behavior

Neuromorphic analogue VLSI

Neuromorphic systems emulate the organization and function of nervous systems. They are usually composed of analogue electronic circuits that are fabricated in the complementary metal-oxide-semiconductor (CMOS) medium using very large-scale integration (VLSI) technology. However, these neuromorphic systems are not another kind of digital computer in which abstract neural networks are simulated symbolically in terms of their mathematical behavior. Instead, they directly embody, in the physics of their CMOS circuits, analogues of the physical processes that underlie the computations of neural systems. The significance of neuromorphic systems is that they offer a method of exploring neural computation in a medium whose physical behavior is analogous to that of biological nervous systems and that operates in real time irrespective of size. The implications of this approach are both scientific and practical. The study of neuromorphic systems provides a bridge between levels of understanding. For example, it provides a link between the physical processes of neurons and their computational significance. In addition, the synthesis of neuromorphic systems transposes our knowledge of neuroscience into practical devices that can interact directly with the real world in the same way that biological nervous systems do

Six networks on a universal neuromorphic computing substrate

In this study, we present a highly configurable neuromorphic computing substrate and use it for emulating several types of neural networks. At the heart of this system lies a mixed-signal chip, with analog implementations of neurons and synapses and digital transmission of action potentials. Major advantages of this emulation device, which has been explicitly designed as a universal neural network emulator, are its inherent parallelism and high acceleration factor compared to conventional computers. Its configurability allows the realization of almost arbitrary network topologies and the use of widely varied neuronal and synaptic parameters. Fixed-pattern noise inherent to analog circuitry is reduced by calibration routines. An integrated development environment allows neuroscientists to operate the device without any prior knowledge of neuromorphic circuit design. As a showcase for the capabilities of the system, we describe the successful emulation of six different neural networks which cover a broad spectrum of both structure and functionality

Response Dynamics of Entorhinal Cortex in Awake, Anesthetized, and Bulbotomized Rats. <i>Brain Research</i> <b>911</b>(2)

The generation of oscillatory activity may be crucial to brain function. The coordination of individual neurons into rhythmic and coherently active populations is thought to result from interactions between excitatory and inhibitory cells mediated by local feedback connections. By using extracellular recording wires and silicon microprobes to measure electrically evoked damped oscillatory responses at the level of neural populations in the entorhinal cortex, and by using current-source density analysis to determine the spatial pattern of evoked responses, we show that the propagation of activity through the cortical circuit and consequent oscillations in the local field potential are dependent upon background neural activity. Pharmacological manipulations as well as surgical disconnection of the olfactory bulb serve to quell the background excitatory input incident to entorhinal cortex, resulting in evoked responses without characteristic oscillations and showing no signs of polysynaptic feedback. Electrical stimulation at 200 Hz applied to the lateral olfactory tract provides a substitute for the normal background activity emanating from the bulb and enables the generation of oscillatory responses once again. We conclude that a nonzero background level of activity is necessary and sufficient to sustain normal oscillatory responses and polysynaptic transmission through the entorhinal cortex

Spontaneous emission rates of dipoles in photonic crystal membranes

We show theoretically that finite two-dimensional (2D) photonic crystals in thin semiconductor membranes strongly modify the spontaneous emission rate of embedded dipole emitters. Three-dimensional Finite-Difference Time-Domain calculations show over 7 times inhibition and 15 times enhancement of the emission rate compared to the vacuum emission rate for judiciously oriented and positioned dipoles. The vertical index confinement in membranes strongly enhances modifications of the emission rate as compared to vertically unconfined 2D photonic crystals. The emission rate modifications inside the membrane mimic the local electric field mode density in a simple 2D model. The inhibition of emission saturates exponentially as the crystal size around the source is increased, with a $1/e$ length that is inversely proportional to the bandwidth of the emission gap. We obtain inhibition of emission only close to the slab center. However, enhancement of emission persists even outside the membrane, with a distance dependence which dependence can be understood by analyzing the contributions to the spontaneous emission rate of the different vertically guided modes of the membrane. Finally we show that the emission changes can even be observed in experiments with ensembles of randomly oriented dipoles, despite the contribution of dipoles for which no gap exists

The Hot-Spot Phenomenon and its Countermeasures in Bipolar Power Transistors by Analytical Electro-Thermal Simulation

This communication deals with a theoretical study of the hot spot onset (HSO) in cellular bipolar power transistors. This well-known phenomenon consists of a current crowding within few cells occurring for high power conditions, which significantly decreases the forward safe operating area (FSOA) of the device. The study was performed on a virtual sample by means of a fast, fully analytical electro-thermal simulator operating in the steady state regime and under the condition of imposed input base current. The purpose was to study the dependence of the phenomenon on several thermal and geometrical factors and to test suitable countermeasures able to impinge this phenomenon at higher biases or to completely eliminate it. The power threshold of HSO and its localization within the silicon die were observed as a function of the electrical bias conditions as for instance the collector voltage, the equivalent thermal resistance of the assembling structure underlying the silicon die, the value of the ballasting resistances purposely added in the emitter metal interconnections and the thickness of the copper heat spreader placed on the die top just to the aim of making more uniform the temperature of the silicon surface.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions