Design and qualification of the SEU/TD Radiation Monitor chip

This report describes the design, fabrication, and testing of the Single-Event Upset/Total Dose (SEU/TD) Radiation Monitor chip. The Radiation Monitor is scheduled to fly on the Mid-Course Space Experiment Satellite (MSX). The Radiation Monitor chip consists of a custom-designed 4-bit SRAM for heavy ion detection and three MOSFET's for monitoring total dose. In addition the Radiation Monitor chip was tested along with three diagnostic chips: the processor monitor and the reliability and fault chips. These chips revealed the quality of the CMOS fabrication process. The SEU/TD Radiation Monitor chip had an initial functional yield of 94.6 percent. Forty-three (43) SEU SRAM's and 14 Total Dose MOSFET's passed the hermeticity and final electrical tests and were delivered to LL

Développement de circuits logiques programmables résistants aux alas logiques en technologie CMOS submicrométrique

The electronics associated to the particle detectors of the Large Hadron Collider (LHC), under construction at CERN, will operate in a very harsh radiation environment. Most of the microelectronics components developed for the first generation of LHC experiments have been designed with very precise experiment-specific goals and are hardly adaptable to other applications. Commercial Off-The-Shelf (COTS) components cannot be used in the vicinity of particle collision due to their poor radiation tolerance. This thesis is a contribution to the effort to cover the need for radiation-tolerant SEU-robust programmable components for application in High Energy Physics (HEP) experiments. Two components are under development: a Programmable Logic Device (PLD) and a Field-Programmable Gate Array (FPGA). The PLD is a fuse-based, 10-input, 8-I/O general architecture device in 0.25 micron CMOS technology. The FPGA under development is instead a 32x32 logic block array, equivalent to ~25k gates, in 0.13 micron CMOS. This work focussed also on the research for an SEU-robust register in both the mentioned technologies. The SEU-robust register is employed as a user data flip-flop in the FPGA and PLD designs and as a configuration cell as well in the FPGA design

SINGLE EVENT UPSET DETECTION IN FIELD PROGRAMMABLE GATE ARRAYS

The high-radiation environment in space can lead to anomalies in normal satellite operation. A major cause of concern to spacecraft-designers is the single event upset (SEU). SEUs can result in deviations from expected component behavior and are capable of causing irreversible damage to hardware. In particular, Field Programmable Gate Arrays (FPGAs) are known to be highly susceptible to SEUs. Radiation-hardened versions of such devices are associated with an increase in power consumption and cost in addition to being technologically inferior when compared to contemporary commercial-off-the-shelf (COTS) parts. This thesis consequently aims at exploring the option of using COTS FPGAs in satellite payloads. A framework is developed, allowing the SEU susceptibility of such a device to be studied. SEU testing is carried out in a software-simulated fault environment using a set of Java classes called JBits. A radiation detector module, to measure the radiation backdrop of the device, is also envisioned as part of the final design implementation

45-nm Radiation Hardened Cache Design

abstract: Circuits on smaller technology nodes become more vulnerable to radiation-induced upset. Since this is a major problem for electronic circuits used in space applications, designers have a variety of solutions in hand. Radiation hardening by design (RHBD) is an approach, where electronic components are designed to work properly in certain radiation environments without the use of special fabrication processes. This work focuses on the cache design for a high performance microprocessor. The design tries to mitigate radiation effects like SEE, on a commercial foundry 45 nm SOI process. The design has been ported from a previously done cache design at the 90 nm process node. The cache design is a 16 KB, 4 way set associative, write-through design that uses a no-write allocate policy. The cache has been tested to write and read at above 2 GHz at VDD = 0.9 V. Interleaved layout, parity protection, dual redundancy, and checking circuits are used in the design to achieve radiation hardness. High speed is accomplished through the use of dynamic circuits and short wiring routes wherever possible. Gated clocks and optimized wire connections are used to reduce power. Structured methodology is used to build up the entire cache.Dissertation/ThesisM.S. Electrical Engineering 201

Ultra low-power fault-tolerant SRAM design in 90nm CMOS technology

With the increment of mobile, biomedical and space applications, digital systems with low-power consumption are required. As a main part in digital systems, low-power memories are especially desired. Reducing the power supply voltages to sub-threshold region is one of the effective approaches for ultra low-power applications. However, the reduced Static Noise Margin (SNM) of Static Random Access Memory (SRAM) imposes great challenges to the subthreshold SRAM design. The conventional 6-transistor SRAM cell does not function properly at sub-threshold supply voltage range because it has no enough noise margin for reliable operation. In order to achieve ultra low-power at sub-threshold operation, previous research work has demonstrated that the read and write decoupled scheme is a good solution to the reduced SNM problem. A Dual Interlocked Storage Cell (DICE) based SRAM cell was proposed to eliminate the drawback of conventional DICE cell during read operation. This cell can mitigate the singleevent effects, improve the stability and also maintain the low-power characteristic of subthreshold SRAM, In order to make the proposed SRAM cell work under different power supply voltages from 0.3 V to 0.6 V, an improved replica sense scheme was applied to produce a reference control signal, with which the optimal read time could be achieved. In this thesis, a 2K ~8 bits SRAM test chip was designed, simulated and fabricated in 90nm CMOS technology provided by ST Microelectronics. Simulation results suggest that the operating frequency at VDD = 0.3 V is up to 4.7 MHz with power dissipation 6.0 ƒÊW, while it is 45.5 MHz at VDD = 0.6 V dissipating 140 ƒÊW. However, the area occupied by a single cell is larger than that by conventional SRAM due to additional transistors used. The main contribution of this thesis project is that we proposed a new design that could simultaneously solve the ultra low-power and radiation-tolerance problem in large capacity memory design

Fault and Defect Tolerant Computer Architectures: Reliable Computing With Unreliable Devices

This research addresses design of a reliable computer from unreliable device technologies. A system architecture is developed for a fault and defect tolerant (FDT) computer. Trade-offs between different techniques are studied and yield and hardware cost models are developed. Fault and defect tolerant designs are created for the processor and the cache memory. Simulation results for the content-addressable memory (CAM)-based cache show 90% yield with device failure probabilities of 3 x 10(-6), three orders of magnitude better than non fault tolerant caches of the same size. The entire processor achieves 70% yield with device failure probabilities exceeding 10(-6). The required hardware redundancy is approximately 15 times that of a non-fault tolerant design. While larger than current FT designs, this architecture allows the use of devices much more likely to fail than silicon CMOS. As part of model development, an improved model is derived for NAND Multiplexing. The model is the first accurate model for small and medium amounts of redundancy. Previous models are extended to account for dependence between the inputs and produce more accurate results

A new architecture for single-event upset detection & reconfiguration of SRAM-based FPGAs

Field Programmable Gate Arrays (FPGA) are used in a variety of applications, ranging from consumer electronics to devices in spacecrafts because of their flexibility in achieving requirements such as low cost, high performance, and fast turnaround. SRAM-based FPGAs can experience single bit flips in the configuration memory due to high-energy neutrons or alpha particles hitting critical nodes in the SRAM cells, by transferring enough energy to effect the change. High energy particles can be emitted by cosmic radiation or traces of radioactive elements in device packaging. The result of this could range from unwanted functional or data modification, data loss in the system, to damage to the cell where the charged particle makes impact. This phenomenon is known as a Single Event Upset (SEU) and makes fault tolerance a critical requirement in FPGA design. This research proposes a shift in architecture from current SRAM-based FPGAs such as Xilinx Virtex. The proposed architecture includes an inherent SEU detection through parity checking of the configuration memory. The inherent SEU detection sets a syndrome flag when an odd number of bit flips occur within a data frame of the configuration memory. To correct a fault, the FPGA the affected data frame is partially reconfigured. Existing and proposed solutions include: Triple Modular Redundancy (TMR) systems; readback and compare the configuration memory; and periodically reprogramming the entire configuration memory, also known as scrubbing. The advantages afforded by the proposed architecture over existing solutions include: faster error detection and correction latency over the readback method and better area and power overhead over TMR

Hardware, Software and Data Analysis Techniques for SRAM-Based Field Programmable Gate Array Circuits

This work presents a built, tested, and demonstrated test structure that is low-cost, flexible, and re-usable for robust radiation experimentation, primarily to investigate memory, in this case SRAMs and SRAM-based FPGAs. The space environment can induce many kinds of failures due to radiation effects. These failures result in a loss of money, time, intelligence, and information. In order to evaluate technologies for potential failures, a detailed test methodology and associated structure are required. In this solution, an FPGA board was used as the controller platform, with multiple VHDL circuit controllers, data collection and reporting modules. The structure was demonstrated by programming an SRAM-based FPGA board as the device under test (DUT) with various types of adders, counters and RAM modules. The controllers, hardware, and data collection operations were tested and validated using gamma radiation from a Co-60 source at the Ohio State University Nuclear Reactor to irradiate the DUT. The test structure is easily modified to allow for a broad range of experiments on the same DUT. In addition, this structure is easily adaptable for other memory types, such as DRAM, FlashRam, and MRAM. These additions will be discussed further in this document. The system fits in a backpack and costs less than $1000

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects

Cross-layer Soft Error Analysis and Mitigation at Nanoscale Technologies

This thesis addresses the challenge of soft error modeling and mitigation in nansoscale technology nodes and pushes the state-of-the-art forward by proposing novel modeling, analyze and mitigation techniques. The proposed soft error sensitivity analysis platform accurately models both error generation and propagation starting from a technology dependent device level simulations all the way to workload dependent application level analysis