Compact Modeling for a Double Gate MOSFET

MOSFETs (metal-oxide-silicon field-effect transistors) are an integral part of modern electronics. Improved designs are currently under investigation, and one that is promising is the double gate MOSFET. Understanding device characteristics is critical for the design of MOSFETs as part of design tools for integrated circuits such as SPICE. Current methods involve the numerical solution of PDEs governing electron transport. Numerical solutions are accurate, but do not provide an appropriate way to optimize the design of the device, nor are they suitable for use in chip simulation software such as SPICE. As chips contain more and more transistors, this problem will get more and more acute. There is hence a need for analytic solutions of the equations governing the performance of MOSFETs, even if these are approximate. Almost all solutions in the literature treat the long-channel case (thin devices) for which the PDEs reduce to ODEs. The goal of this problem is to produce analytical solutions based on the underlying PDEs that are rapid to compute (e.g. require solving only a small number of algebraic equations rather than systems of PDEs). Guided by asymptotic analysis, a fast numerical procedure has been developed to obtain approximate solutions of the governing PDEs governing MOSFET properties, namely electron density, Fermi potential and electrostatic potential. The approach depends on the channel’s being long enough, and appears accurate in this limit

MODELING AND SPICE IMPLEMENTATION OF SILICON-ON-INSULATOR (SOI) FOUR GATE (G4FET) TRANSISTOR

As the device dimensions have reduced from micrometer to nanometer range, new bulk silicon devices are now facing many undesirable effects of scaling leading device engineers to look for new process technologies. Silicon-on-insulator (SOI) has emerged as a very promising candidate for resolving the major problems plaguing the bulk silicon technology. G4FET [G4FET] is a SOI transistor with four independent gates. Although G4FET has already shown great potential in different applications, the widespread adoption of a technology in circuit design is heavily dependent upon good SPICE (Simulation Program with Integrated Circuit Emphasis) models. CAD (Computer Aided Design) tools are now ubiquitous in circuit design and a fast, robust and accurate SPICE model is absolutely necessary to transform G4FET into a mainstream technology. The research goal is to develop suitable SPICE models for G4FET to aid circuit designers in designing innovative analog and digital circuits using this new transistor. The first phase of this work is numerical modeling of the G4FET where four different numerical techniques are implemented, each with its merits and demerits. The first two methods are based on multivariate Lagrange interpolation and multidimensional Bernstein polynomial. The third numerical technique is based on multivariate regression polynomial to aid modeling with dense gridded data. Another suitable alternative namely multidimensional linear and cubic spline interpolation is explored as the fourth numerical modeling approach to solve some of the problems resulting from single polynomial approximation. The next phase of modeling involves developing a macromodel combining already existing SPICE models of MOSFET (metal–oxide–semiconductor field-effect transistor) and JFET (junction-gate field-effect transistor). This model is easy to implement in circuit simulators and provides good results compared to already demonstrated experimental works with innovative G4FET circuits. The final phase of this work involves the development of a physics-based compact model of G4FET with some empirical fitting parameters. A model for depletion-all-around operation is implemented in circuit simulator based on previous work. Another simplified model, combining MOS and JFET action, is implemented in circuit simulator to model the accumulation mode operation of G4FET

Semiconductor Device Modeling and Simulation for Electronic Circuit Design

This chapter covers different methods of semiconductor device modeling for electronic circuit simulation. It presents a discussion on physics-based analytical modeling approach to predict device operation at specific conditions such as applied bias (e.g., voltages and currents); environment (e.g., temperature, noise); and physical characteristics (e.g., geometry, doping levels). However, formulation of device model involves trade-off between accuracy and computational speed and for most practical operation such as for SPICE-based circuit simulator, empirical modeling approach is often preferred. Thus, this chapter also covers empirical modeling approaches to predict device operation by implementing mathematically fitted equations. In addition, it includes numerical device modeling approaches, which involve numerical device simulation using different types of commercial computer-based tools. Numerical models are used as virtual environment for device optimization under different conditions and the results can be used to validate the simulation models for other operating conditions

Grid infrastructures for the electronics domain: requirements and early prototypes from an EPSRC pilot project

The fundamental challenges facing future electronics design is to address the decreasing – atomistic - scale of transistor devices and to understand and predict the impact and statistical variability these have on design of circuits and systems. The EPSRC pilot project “Meeting the Design Challenges of nanoCMOS Electronics” (nanoCMOS) which began in October 2006 has been funded to explore this space. This paper outlines the key requirements that need to be addressed for Grid technology to support the various research strands in this domain, and shows early prototypes demonstrating how these requirements are being addressed

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

EMI suppression of DC-DC synchronous buck converters by layout optimizations and EMI prediction using non-linear and SPICE circuit co-simulation

The oscillation on the phase voltage is due to the resonant structure formed by a parasitic loop (consisting of two FETs and the input decoupling capacitors) inductance and the output capacitance of the low side FET. Therefore, it is important to minimize this parasitic loop inductance. A simulation guideline is developed on full-wave modeling and simulation of buck converter layouts to estimate the parasitic loop inductances. Furthermore, this method is taken one step further to estimate the far-field radiation from the loop. These simulations were verified on six PCB variants of the buck converter and were compared with measurements in a semi anechoic chamber. Later a layout optimization technique for dc-dc synchronous buck converter to suppress its EMI and minimize its parasitic loop inductance is discussed. Three different loop orientations were optimized for lowest loop inductance by proper placement of FETs, decoupling capacitors, vias, etc. The radiated emissions of these loops were compared and were also compared with full-wave simulation. Co-simulation is a method which combines full-wave and non-linear SPICE solutions to obtain a model which reflects the real circuit behavior of the PCB. In the first part of this thesis, co-simulation is used to estimate the EMC related parameters of the dc-dc synchronous buck converter. Three different co-simulated strategies were examined and analyzed. Initially the phase voltage ringing was estimated and compared with the measured ringing on the phase voltage. After achieving a decent match, EMC parameters such as coupling in a TEM cell and coupled voltage on a conical antenna were co-simulated. These simulations were then verified by lab measurements. Important aspects, pros and cons of co-simulation are also discussed --Abstract, page iv

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis

Statistical circuit simulations - from ‘atomistic’ compact models to statistical standard cell characterisation

This thesis describes the development and application of statistical circuit simulation methodologies to analyse digital circuits subject to intrinsic parameter fluctuations. The specific nature of intrinsic parameter fluctuations are discussed, and we explain the crucial importance to the semiconductor industry of developing design tools which accurately account for their effects. Current work in the area is reviewed, and three important factors are made clear: any statistical circuit simulation methodology must be based on physically correct, predictive models of device variability; the statistical compact models describing device operation must be characterised for accurate transient analysis of circuits; analysis must be carried out on realistic circuit components. Improving on previous efforts in the field, we posit a statistical circuit simulation methodology which accounts for all three of these factors. The established 3-D Glasgow atomistic simulator is employed to predict electrical characteristics for devices aimed at digital circuit applications, with gate lengths from 35 nm to 13 nm. Using these electrical characteristics, extraction of BSIM4 compact models is carried out and their accuracy in performing transient analysis using SPICE is validated against well characterised mixed-mode TCAD simulation results for 35 nm devices. Static d.c. simulations are performed to test the methodology, and a useful analytic model to predict hard logic fault limitations on CMOS supply voltage scaling is derived as part of this work. Using our toolset, the effect of statistical variability introduced by random discrete dopants on the dynamic behaviour of inverters is studied in detail. As devices scaled, dynamic noise margin variation of an inverter is increased and higher output load or input slew rate improves the noise margins and its variation. Intrinsic delay variation based on CV/I delay metric is also compared using ION and IEFF definitions where the best estimate is obtained when considering ION and input transition time variations. Critical delay distribution of a path is also investigated where it is shown non-Gaussian. Finally, the impact of the cell input slew rate definition on the accuracy of the inverter cell timing characterisation in NLDM format is investigated

Impact on signal integrity of interconnect variabilities

In this paper, literature results on the statistical simulation of lossy and dispersive interconnect networks with uncertain physical properties are extended to general nonlinear circuits. The approach is based on the expansion of circuit voltages and currents into polynomial chaos approximations. The derivation of deterministic circuit equivalents for nonlinear components allows to retrieve the unknown expansion coefficients with a single circuit simulation, that can be carried out via standard SPICE-type solvers. These coefficients provide direct statistical information. The methodology allows the inclusion of arbitrary nonlinear elements and is validated via transmission-line networks terminated by diodes and driven by inverter

Compact Models for Integrated Circuit Design

This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models. Featuring exercise problems at the end of each chapter and extensive references at the end of the book, the text supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices. It ensures even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts