Efficient DSP and Circuit Architectures for Massive MIMO: State-of-the-Art and Future Directions

Massive MIMO is a compelling wireless access concept that relies on the use of an excess number of base-station antennas, relative to the number of active terminals. This technology is a main component of 5G New Radio (NR) and addresses all important requirements of future wireless standards: a great capacity increase, the support of many simultaneous users, and improvement in energy efficiency. Massive MIMO requires the simultaneous processing of signals from many antenna chains, and computational operations on large matrices. The complexity of the digital processing has been viewed as a fundamental obstacle to the feasibility of Massive MIMO in the past. Recent advances on system-algorithm-hardware co-design have led to extremely energy-efficient implementations. These exploit opportunities in deeply-scaled silicon technologies and perform partly distributed processing to cope with the bottlenecks encountered in the interconnection of many signals. For example, prototype ASIC implementations have demonstrated zero-forcing precoding in real time at a 55 mW power consumption (20 MHz bandwidth, 128 antennas, multiplexing of 8 terminals). Coarse and even error-prone digital processing in the antenna paths permits a reduction of consumption with a factor of 2 to 5. This article summarizes the fundamental technical contributions to efficient digital signal processing for Massive MIMO. The opportunities and constraints on operating on low-complexity RF and analog hardware chains are clarified. It illustrates how terminals can benefit from improved energy efficiency. The status of technology and real-life prototypes discussed. Open challenges and directions for future research are suggested.Comment: submitted to IEEE transactions on signal processin

On the VCO/Frequency Divider Interface in Cryogenic CMOS PLL for Quantum Computing Applications

The availability of quantum microprocessors is mandatory, to efficiently run those quantum al-gorithms promising a radical leap forward in computation capability. Silicon-based nanostruc-tured qubits appear today as a very interesting approach, because of their higher information density, longer coherence times, fast operation gates, and compatibility with the actual CMOS technology. In particular, thanks to their phase noise properties, the actual CMOS RFIC Phase-Locked Loops (PLL) and Phase-Locked Oscillators (PLO) are interesting circuits to synthe-size control signals for spintronic qubits. In a quantum microprocessor, these circuits should op-erate close to the qubits, that is, at cryogenic temperatures. The lack of commercial cryogenic Design Kits (DK) may make the interface between the Voltage Controlled Oscillator (VCO) and the Frequency Divider (FD) a serious issue. Nevertheless, currently this issue has not been sys-tematically addressed in the literature. The aim of the present paper is to investigate the VCO/FD interface when the temperature drops from room to cryogenic. To this purpose, physi-cal models of electronics passive/active devices and equivalent circuits of VCO and the FD were developed at room and cryogenic temperatures. The modeling activity has led to design guide-lines for the VCO/FD interface, useful in the absence of cryogenic DKs

Low-power Design of a Neuromorphic IC and MICS Transceiver

abstract: The first part describes Metal Semiconductor Field Effect Transistor (MESFET) based fundamental analog building blocks designed and fabricated in a single poly, 3-layer metal digital CMOS technology utilizing fully depletion mode MESFET devices. DC characteristics were measured by varying the power supply from 2.5V to 5.5V. The measured DC transfer curves of amplifiers show good agreement with the simulated ones with extracted models from the same process. The accuracy of the current mirror showing inverse operation is within ±15% for the current from 0 to 1.5mA with the power supply from 2.5 to 5.5V. The second part presents a low-power image recognition system with a novel MESFET device fabricated on a CMOS substrate. An analog image recognition system with power consumption of 2.4mW/cell and a response time of 6µs is designed, fabricated and characterized. The experimental results verified the accuracy of the extracted SPICE model of SOS MESFETs. The response times of 4µs and 6µs for one by four and one by eight arrays, respectively, are achieved with the line recognition. Each core cell for both arrays consumes only 2.4mW. The last part presents a CMOS low-power transceiver in MICS band is presented. The LNA core has an integrated mixer in a folded configuration. The baseband strip consists of a pseudo differential MOS-C band-pass filter achieving demodulation of 150kHz-offset BFSK signals. The SRO is used in a wakeup RX for the wake-up signal reception. The all digital frequency-locked loop drives a class AB power amplifier in a transmitter. The sensitivity of -85dBm in the wakeup RX is achieved with the power consumption of 320µW and 400µW at the data rates of 100kb/s and 200kb/s from 1.8V, respectively. The sensitivities of -70dBm and -98dBm in the data-link RX are achieved with NF of 40dB and 11dB at the data rate of 100kb/s while consuming only 600µW and 1.5mW at 1.2V and 1.8V, respectively.Dissertation/ThesisPh.D. Electrical Engineering 201

Design of a RF communication receiver front-end for ultra-low power and voltage applications in a FDSOI 28nm technology

The advances in the semiconductor and wireless industry have enabled the expansion of new paradigms, which have given rise to concepts like Internet of Things (IoT). Apart from qualities like size, speed or cost, the ever-increasing demand for autonomy focuses all design efforts in the minimization of power consumption. Scaling technologies and the request to reduce power consumption have pushed designers towards lower supply voltages. Despite the fact that technology scalability allows for faster transistors, radio-frequency (RF) integrated circuit (IC) design accuses the reduction of the voltage supply through frequency response degradation, which significantly deteriorates the overall performance. Analog and RF circuits in highend applications require substantial gate voltage overdrive to maintain device speed, which further complicates the design due to the reduction of voltage headroom. As a consequence, the necessity to develop circuit topologies capable to deal with low-power and low-voltage stringent constraints well suited to applications requiring long battery life and low cost emerges. This work aims to implement a low-noise amplifier and mixer stages of a radio-frequency receiver front-end working under an ultra-low power (< 100 ?W) and ultra-low voltage (< 0.8V) scenario while targeting decent overall performance. To cope with the stringent power requirements, 28nm FD-SOI technology will be used to take maximum profit of aggressive forward body bias and enhance transistor performance

Design of 5v Digital Standard Cells And I/O Libraries for Military Standard Temperatures

The scope of this research work is to develop digital standard cell and I/O cell libraries operable at 5V power supply and operable up to 125�C using Peregrine 0.5um 3.3 V process. Device geometries are selected based on Ion/Ioff ratios at 125�C. The cell schematic, layout and abstracted views are generated for both the libraries The Standard cell and I/O libraries are characterized for timing and power and the characterization data is realized in various formats compatible with logic synthesis and place and route tools. The pads have been tested for robustness to ESD. A tutorial on abstraction of standard cells and IO cells is prepared using the Cadence Abstract Generator.School of Electrical & Computer Engineerin

Modelling and Design Optimisations of CMOS MEMS Single Membrane Thermopile Detector Arrays

Thermal imaging devices based on Complementary Metal-Oxide-Semiconductor (CMOS) and Micro-Electro-Mechanical System (MEMS) technology are widely used across consumer and industrial applications. The combination of CMOS and MEMS technologies allows for the production of devices with high performance, good reliability and consistent reproducibility. Additionally, these technologies allow devices to be manufactured at low cost and a high volume. There are several types of thermal sensing technologies, however, this thesis mainly focuses on 8×8 thermopile based Focal Plane Arrays (FPAs). The core principles governing the function of thermopiles are based on the Seebeck effect. In this thesis, the structure and fabrication process of thermopile FPAs are described and discussed. The thesis describes the functionality of the array chip and introduces a new experimental technique, called the bi-directional electrical biasing method, which was applied to obtain the device’s responsivity and crosstalk measurements. Compared to traditional measurement approaches using laser sources, this novel method significantly reduces the complexity of the experimental setup, as no external laser source is required. The crosstalk of the 8×8 array is ~2.69% and the responsivity is ~73.1 V/W. A detecting system using a larger array chip was designed, created and successfully applied in a series of experiments that involved gesture recognition and people counting. In order to enhance the performance of the current array device, a 3D simulation model based on the Finite Element Method (FEM) was built using the COMSOL Multiphysics simulation tool. The numerical model was validated by comparing the model’s simulated values for responsivity, crosstalk and temperature distribution with experimental results. The difference between the simulations and experimental results was 90 V/W in the model with tungsten tracks. A 32×32 array design demonstrates the smallest pixel size that can be achieved based on this thermopile array design. The 32×32 array design increased responsivity to ~77.18 V/W and crosstalk remained 6% when the pixel size was reduced further in a 64×64 array design, at this level of crosstalk, image quality is likely to be significantly affected. Future work may focus on the implementation of carbon nanotubes or novel 3D thermopile designs. Carbon nanotubes, when deposited over the array chip, could enhance the absorption of IR radiation. While new thermopiles employing a 3D design could dramatically reduce array size and potentially achieve a fill factor of 100%