Magnetics and GaN for Integrated CMOS Voltage Regulators

The increased use of DC-consuming electronics in many applications relevant to everyday life, necessitates significant improvements to power conversion and distribution methodologies. The surge in mobile electronics created a new power application space where high efficiency, size, and reduced complexity are critical, and at the same time, many computational tasks are relegated to centralized cloud computing centers, which consume significant amounts of energy. In both those application spaces, conversion and distribution efficiency improvements of even a few-% proves to be more and more challenging. A lot of research and development efforts target each source of loss, in an attempt to improve power electronics such that it serves the advances in other fields of electronics. Non-isolated DC-DC converters are essential in every electronics system, and improvements to efficiency, volume, weight and cost are of utmost interest. In particular, increasing the operation frequency and the conversion ratio of such converters serves the purposes of reducing the number or required conversion steps, reducing converter size, and increasing efficiency. The aforementioned improvements can be achieved by using superior technologies for the components of the converter, and by implementing higher level of integration than most present-day converters exhibit. In this work, Gallium Nitride (GaN) high electron mobility transistors (HEMT) are utilized as switches in a half-bridge buck converter topology, in conjunction with fine-line 180nm complementary metal oxide semiconductor (CMOS) driver circuitry. The circuits are integrated through a face-to-face bonding technique which results in significant reduction in interconnects parasitics and allows faster, more efficient operation. This work shows that the use of GaN transistors for the converter gives an efficiency headroom that allow pairing converters with state-of-the-art thin-film inductors with magnetic material, a task that is currently usually relegated to air-core inductors. In addition, a new "core-clad" structure for thin-film magnetic integrated inductors is presented for the use with fully integrated voltage regulators (IVRs). The core-clad topology combines aspects from the two popular inductor topologies (solenoid and cladded) to achieve higher inductance density and improved high frequency performance

Design and Control of Power Converters for High Power-Quality Interface with Utility and Aviation Grids

Power electronics as a subject integrating power devices, electric and electronic circuits, control, and thermal and mechanic design, requires not only knowledge and engineering insight for each subarea, but also understanding of interface issues when incorporating these different areas into high performance converter design.Addressing these fundamental questions, the dissertation studies design and control issues in three types of power converters applied in low-frequency high-power transmission, medium-frequency converter emulated grid, and high-frequency high-density aviation grid, respectively, with the focus on discovering, understanding, and mitigating interface issues to improve power quality and converter performance, and to reduce the noise emission.For hybrid ac/dc power transmission,• Analyze the interface transformer saturation issue between ac and dc power flow under line unbalances.• Proposed both passive transformer design and active hybrid-line-impedance-conditioner to suppress this issue.For transmission line emulator,• Propose general transmission line emulation schemes with extension capability.• Analyze and actively suppress the effects of sensing/sampling bias and PWM ripple on emulation considering interfaced grid impedance.• Analyze the stability issue caused by interaction of the emulator and its interfaced impedance. A criterion that determines the stability and impedance boundary of the emulator is proposed.For aircraft battery charger,• Investigate architectures for dual-input and dual-output battery charger, and a three-level integrated topology using GaN devices is proposed to achieve high density.• Identify and analyze the mechanisms and impacts of high switching frequency, di/dt, dv/dt on sensing and power quality control; mitigate solutions are proposed.• Model and compensate the distortion due to charging transition of device junction capacitances in three-level converters.• Find the previously overlooked device junction capacitance of the nonactive devices in three-level converters, and analyze the impacts on switching loss, device stress, and current distortion. A loss calculation method is proposed using the data from the conventional double pulse tester.• Establish fundamental knowledge on performance degradation of EMI filters. The impacts and mechanisms of both inductive and capacitive coupling on different filter structures are understood. Characterization methodology including measuring, modeling, and prediction of filter insertion loss is proposed. Mitigation solutions are proposed to reduce inter-component coupling and self-parasitics

Isolated Single-stage Power Electronic Building Blocks Using Medium Voltage Series-stacked Wide-bandgap Switches

The demand for efficient power conversion systems that can process the energy at high power and voltage levels is increasing every day. These systems are to be used in microgrid applications. Wide-bandgap semiconductor devices (i.e. Silicon Carbide (SiC) and Gallium Nitride (GaN) devices) are very promising candidates due to their lower conduction and switching losses compared to the state-of-the-art Silicon (Si) devices. The main challenge for these devices is that their breakdown voltages are relatively lower compared to their Si counterpart. In addition, the high frequency operation of the wide-bandgap devices are impeded in many cases by the magnetic core losses of the magnetic coupling components (i.e. coupled inductors and/or high frequency transformers) utilized in the power converter circuit. Six new dc-dc converter topologies are propose. The converters have reduced voltage stresses on the switches. Three of them are unidirectional step-up converters with universal input voltage which make them excellent candidates for photovoltaic and fuel cell applications. The other three converters are bidirectional dc-dc converters with wide voltage conversion ratios. These converters are very good candidates for the applications that require bidirectional power flow capability. In addition, the wide voltage conversion ratios of these converters can be utilized for applications such as energy storage systems with wide voltage swings

Special Power Electronics Converters and Machine Drives with Wide Band-Gap Devices

Power electronic converters play a key role in power generation, storage, and consumption. The major portion of power losses in the converters is dissipated in the semiconductor switching devices. In recent years, new power semiconductors based on wide band-gap (WBG) devices have been increasingly developed and employed in terms of promising merits including the lower on-state resistance, lower turn-on/off energy, higher capable switching frequency, higher temperature tolerance than conventional Si devices. However, WBG devices also brought new challenges including lower fault tolerance, higher system cost, gate driver challenges, and high dv/dt and resulting increased bearing current in electric machines. This work first proposed a hybrid Si IGBTs + SiC MOSFETs five-level transistor clamped H-bridge (TCHB) inverter which required significantly fewer number of semiconductor switches and fewer isolated DC sources than the conventional cascaded H-bridge inverter. As a result, system cost was largely reduced considering the high price of WBG devices in the present market. The semiconductor switches operated at carrier frequency were configured as Silicon Carbide (SiC) devices to improve the inverter efficiency, while the switches operated at fundamental output frequency (i.e., grid frequency) were constituted by Silicon (Si) IGBT devices. Different modulation strategies and control methods were developed and compared. In other words, this proposed SiC+Si hybrid TCHB inverter provided a solution to ride through a load short-circuit fault. Another special power electronic, multiport converter, was designed for EV charging station integrated with PV power generation and battery energy storage system. The control scheme for different charging modes was carefully developed to improve stabilization including power gap balancing, peak shaving, and valley filling, and voltage sag compensation. As a result, the influence on the power grid was reduced due to the matching between daily charging demand and adequate daytime PV generation. For special machine drives, such as slotless and coreless machines with low inductance, low core losses, typical drive implementations using conventional silicon-based devices are performance limited and also produce large current and torque ripples. In this research, WBG devices were employed to increase inverter switching frequency, reduce current ripple, reduce filter size, and as a result reduce drive system cost. Two inverter drive configurations were proposed and implemented with WBG devices in order to mitigate such issues for 2-phase very low inductance machines. Two inverter topologies, i.e., a dual H-bridge inverter with maximum redundancy and survivability and a 3-leg inverter for reduced cost, were considered. Simulation and experimental results validated the drive configurations in this dissertation. An integrated AC/AC converter was developed for 2-phase motor drives. Additionally, the proposed integrated AC/AC converter was systematically compared with commonly used topologies including AC/DC/AC converter and matrix converters, in terms of the output voltage/current capability, total harmonics distortion (THD), and system cost. Furthermore, closed-loop speed controllers were developed for the three topologies, and the maximum operating range and output phase currents were investigated. The proposed integrated AC/AC converter with a single-phase input and a 2-phase output reduced the switch count to six and resulting in minimized system cost and size for low power applications. In contrast, AC/DC/AC pulse width modulation (PWM) converters contained twelve active power semiconductor switches and a common DC link. Furthermore, a modulation scheme and filters for the proposed converter were developed and modeled in detail. For the significantly increased bearing current caused by the transition from Si devices to WBG devices, advanced modeling and analysis approach was proposed by using coupled field-circuit electromagnetic finite element analysis (FEA) to model bearing voltage and current in electric machines, which took into account the influence of distributed winding conductors and frequency-dependent winding RL parameters. Possible bearing current issues in axial-flux machines, and possibilities of computation time reduction, were also discussed. Two experimental validation approaches were proposed: the time-domain analysis approach to accurately capture the time transient, the stationary testing approach to measure bearing capacitance without complex control development or loading condition limitations. In addition, two types of motors were employed for experimental validation: an inside-out N-type PMSM was used for rotating testing and stationary testing, and an N-type BLDC was used for stationary testing. Possible solutions for the increased CMV and bearing currents caused by the implementation of WGB devices were discussed and developed in simulation validation, including multi-carrier SPWM modulation and H-8 converter topology

Design and Control of Power Converters 2019

In this book, 20 papers focused on different fields of power electronics are gathered. Approximately half of the papers are focused on different control issues and techniques, ranging from the computer-aided design of digital compensators to more specific approaches such as fuzzy or sliding control techniques. The rest of the papers are focused on the design of novel topologies. The fields in which these controls and topologies are applied are varied: MMCs, photovoltaic systems, supercapacitors and traction systems, LEDs, wireless power transfer, etc

Function Implementation in a Multi-Gate Junctionless FET Structure

Title from PDF of title page, viewed September 18, 2023Dissertation advisor: Mostafizur RahmanVitaIncludes bibliographical references (pages 95-117)Dissertation (Ph.D.)--Department of Computer Science and Electrical Engineering, Department of Physics and Astronomy. University of Missouri--Kansas City, 2023This dissertation explores designing and implementing a multi-gate junctionless field-effect transistor (JLFET) structure and its potential applications beyond conventional devices. The JLFET is a promising alternative to conventional transistors due to its simplified fabrication process and improved electrical characteristics. However, previous research has focused primarily on the device's performance at the individual transistor level, neglecting its potential for implementing complex functions. This dissertation fills this research gap by investigating the function implementation capabilities of the JLFET structure and proposing novel circuit designs based on this technology. The first part of this dissertation presents a comprehensive review of the existing literature on JLFETs, including their fabrication techniques, operating principles, and performance metrics. It highlights the advantages of JLFETs over traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) and discusses the challenges associated with their implementation. Additionally, the review explores the limitations of conventional transistor technologies, emphasizing the need for exploring alternative device architectures. Building upon the theoretical foundation, the dissertation presents a detailed analysis of the multi-gate JLFET structure and its potential for realizing advanced functions. The study explores the impact of different design parameters, such as channel length, gate oxide thickness, and doping profiles, on the device performance. It investigates the trade-offs between power consumption, speed, and noise immunity, and proposes design guidelines for optimizing the function implementation capabilities of the JLFET. To demonstrate the practical applicability of the JLFET structure, this dissertation introduces several novel circuit designs based on this technology. These designs leverage the unique characteristics of the JLFET, such as its steep subthreshold slope and improved on/off current ratio, to implement complex functions efficiently. The proposed circuits include arithmetic units, memory cells, and digital logic gates. Detailed simulations and analyses are conducted to evaluate their performance, power consumption, and scalability. Furthermore, this dissertation explores the potential of the JLFET structure for emerging technologies, such as neuromorphic computing and bioelectronics. It investigates how the JLFET can be employed to realize energy-efficient and biocompatible devices for applications in artificial intelligence and biomedical engineering. The study investigates the compatibility of the JLFET with various materials and substrates, as well as its integration with other functional components. In conclusion, this dissertation contributes to the field of nanoelectronics by providing a comprehensive investigation into the function implementation capabilities of the multi-gate JLFET structure. It highlights the potential of this device beyond its individual transistor performance and proposes novel circuit designs based on this technology. The findings of this research pave the way for the development of advanced electronic systems that are more energy-efficient, faster, and compatible with emerging applications in diverse fields.Introduction -- Literature review -- Crosstalk principle -- Experiment of crosstalk -- Device architecture -- Simulation & results -- Conclusio