2D Parity Product Code for TSV online fault correction and detection

Through-Silicon-Via (TSV) is one of the most promising technologies to realize 3D Integrated Circuits (3D-ICs).  However, the reliability issues due to the low yield rates and the sensitivity to thermal hotspots and stress issues are preventing TSV-based 3D-ICs from being widely and efficiently used. To enhance the reliability of TSV connections, using error correction code to detect and correct faults automatically has been demonstrated as a viable solution.This paper presents a 2D Parity Product Code (2D-PPC) for TSV fault-tolerance with the ability to correct one fault and detect, at least, two faults.  In an implementation of 64-bit data and 81-bit codeword, 2D-PPC can detect over 71 faults, on average. Its encoder and decoder decrease the overall latency by 38.33% when compared to the Single Error Correction Double Error Detection code.  In addition to the high detection rates, the encoder can detect 100% of its gate failures, and the decoder can detect and correct around 40% of its individual gate failures. The squared 2D-PPC could be extended using orthogonal Latin square to support extra bit correction

Développement d'architectures HW/SW tolérantes aux fautes et auto-calibrantes pour les technologies Intégrées 3D

Malgré les avantages de l'intégration 3D, le test, le rendement et la fiabilité des Through-Silicon-Vias (TSVs) restent parmi les plus grands défis pour les systèmes 3D à base de Réseaux-sur-Puce (Network-on-Chip - NoC). Dans cette thèse, une stratégie de test hors-ligne a été proposé pour les interconnections TSV des liens inter-die des NoCs 3D. Pour le TSV Interconnect Built-In Self-Test (TSV-IBIST) on propose une nouvelle stratégie pour générer des vecteurs de test qui permet la détection des fautes structuraux (open et short) et paramétriques (fautes de délaye). Des stratégies de correction des fautes transitoires et permanents sur les TSV sont aussi proposées aux plusieurs niveaux d'abstraction: data link et network. Au niveau data link, des techniques qui utilisent des codes de correction (ECC) et retransmission sont utilisées pour protégé les liens verticales. Des codes de correction sont aussi utilisés pour la protection au niveau network. Les défauts de fabrication ou vieillissement des TSVs sont réparé au niveau data link avec des stratégies à base de redondance et sérialisation. Dans le réseau, les liens inter-die défaillante ne sont pas utilisables et un algorithme de routage tolérant aux fautes est proposé. On peut implémenter des techniques de tolérance aux fautes sur plusieurs niveaux. Les résultats ont montré qu'une stratégie multi-level atteint des très hauts niveaux de fiabilité avec un cout plus bas. Malheureusement, il n'y as pas une solution unique et chaque stratégie a ses avantages et limitations. C'est très difficile d'évaluer tôt dans le design flow les couts et l'impact sur la performance. Donc, une méthodologie d'exploration de la résilience aux fautes est proposée pour les NoC 3D mesh.3D technology promises energy-efficient heterogeneous integrated systems, which may open the way to thousands cores chips. Silicon dies containing processing elements are stacked and connected by vertical wires called Through-Silicon-Vias. In 3D chips, interconnecting an increasing number of processing elements requires a scalable high-performance interconnect solution: the 3D Network-on-Chip. Despite the advantages of 3D integration, testing, reliability and yield remain the major challenges for 3D NoC-based systems. In this thesis, the TSV interconnect test issue is addressed by an off-line Interconnect Built-In Self-Test (IBIST) strategy that detects both structural (i.e. opens, shorts) and parametric faults (i.e. delays and delay due to crosstalk). The IBIST circuitry implements a novel algorithm based on the aggressor-victim scenario and alleviates limitations of existing strategies. The proposed Kth-aggressor fault (KAF) model assumes that the aggressors of a victim TSV are neighboring wires within a distance given by the aggressor order K. Using this model, TSV interconnect tests of inter-die 3D NoC links may be performed for different aggressor order, reducing test times and circuitry complexity. In 3D NoCs, TSV permanent and transient faults can be mitigated at different abstraction levels. In this thesis, several error resilience schemes are proposed at data link and network levels. For transient faults, 3D NoC links can be protected using error correction codes (ECC) and retransmission schemes using error detection (Automatic Retransmission Query) and correction codes (i.e. Hybrid error correction and retransmission).For transients along a source-destination path, ECC codes can be implemented at network level (i.e. Network-level Forward Error Correction). Data link solutions also include TSV repair schemes for faults due to fabrication processes (i.e. TSV-Spare-and-Replace and Configurable Serial Links) and aging (i.e. Interconnect Built-In Self-Repair and Adaptive Serialization) defects. At network-level, the faulty inter-die links of 3D mesh NoCs are repaired by implementing a TSV fault-tolerant routing algorithm. Although single-level solutions can achieve the desired yield / reliability targets, error mitigation can be realized by a combination of approaches at several abstraction levels. To this end, multi-level error resilience strategies have been proposed. Experimental results show that there are cases where this multi-layer strategy pays-off both in terms of cost and performance. Unfortunately, one-fits-all solution does not exist, as each strategy has its advantages and limitations. For system designers, it is very difficult to assess early in the design stages the costs and the impact on performance of error resilience. Therefore, an error resilience exploration (ERX) methodology is proposed for 3D NoCs.SAVOIE-SCD - Bib.électronique (730659901) / SudocGRENOBLE1/INP-Bib.électronique (384210012) / SudocGRENOBLE2/3-Bib.électronique (384219901) / SudocSudocFranceF

Contactless Test Access Mechanism for 3D IC

3D IC integration presents many advantages over the current 2D IC integration. It has the potential to reduce the power consumption and the physical size while supporting higher bandwidth and processing speed. Through Silicon Via’s (TSVs) are vertical interconnects between different layers of 3D ICs with a typical 5μm diameter and 50μm length. To test a 3D IC, an access mechanism is needed to apply test vectors to TSVs and observe their responses. However, TSVs are too small for access by current wafer probes and direct TSV probing may affect their physical integrity. In addition, the probe needles for direct TSV probing must be cleaned or replaced frequently. Contactless probing method resolves most of the TSV probing problems and can be employed for small-pitch TSVs. In this dissertation, contactless test access mechanisms for 3D IC have been explored using capacitive and inductive coupling techniques. Circuit models for capacitive and inductive communication links are extracted using 3D full-wave simulations and then circuit level simulations are carried out using Advanced Design System (ADS) design environment to verify the results. The effects of cross-talk and misalignment on the communication link have been investigated. A contactless TSV probing method using capacitive coupling is proposed and simulated. A prototype was fabricated using TSMC 65nm CMOS technology to verify the proposed method. The measurement results on the fabricated prototype show that this TSV probing scheme presents -55dB insertion loss at 1GHz frequency and maintains higher than 35dB signal-to-noise ratio within 5µm distance. A microscale contactless probe based on the principle of resonant inductive coupling has also been designed and simulated. Experimental measurements on a prototype fabricated in TSMC 65nm CMOS technology indicate that the data signal on the TSV can be reconstructed when the distance between the TSV and the probe remains less than 15µm

Investigation into yield and reliability enhancement of TSV-based three-dimensional integration circuits

Three dimensional integrated circuits (3D ICs) have been acknowledged as a promising technology to overcome the interconnect delay bottleneck brought by continuous CMOS scaling. Recent research shows that through-silicon-vias (TSVs), which act as vertical links between layers, pose yield and reliability challenges for 3D design. This thesis presents three original contributions.The first contribution presents a grouping-based technique to improve the yield of 3D ICs under manufacturing TSV defects, where regular and redundant TSVs are partitioned into groups. In each group, signals can select good TSVs using rerouting multiplexers avoiding defective TSVs. Grouping ratio (regular to redundant TSVs in one group) has an impact on yield and hardware overhead. Mathematical probabilistic models are presented for yield analysis under the influence of independent and clustering defect distributions. Simulation results using MATLAB show that for a given number of TSVs and TSV failure rate, careful selection of grouping ratio results in achieving 100% yield at minimal hardware cost (number of multiplexers and redundant TSVs) in comparison to a design that does not exploit TSV grouping ratios. The second contribution presents an efficient online fault tolerance technique based on redundant TSVs, to detect TSV manufacturing defects and address thermal-induced reliability issue. The proposed technique accounts for both fault detection and recovery in the presence of three TSV defects: voids, delamination between TSV and landing pad, and TSV short-to-substrate. Simulations using HSPICE and ModelSim are carried out to validate fault detection and recovery. Results show that regular and redundant TSVs can be divided into groups to minimise area overhead without affecting the fault tolerance capability of the technique. Synthesis results using 130-nm design library show that 100% repair capability can be achieved with low area overhead (4% for the best case). The last contribution proposes a technique with joint consideration of temperature mitigation and fault tolerance without introducing additional redundant TSVs. This is achieved by reusing spare TSVs that are frequently deployed for improving yield and reliability in 3D ICs. The proposed technique consists of two steps: TSV determination step, which is for achieving optimal partition between regular and spare TSVs into groups; The second step is TSV placement, where temperature mitigation is targeted while optimizing total wirelength and routing difference. Simulation results show that using the proposed technique, 100% repair capability is achieved across all (five) benchmarks with an average temperature reduction of 75.2? (34.1%) (best case is 99.8? (58.5%)), while increasing wirelength by a small amount

TSV Equivalent Circuit Model using 3D Full-Wave Analysis

This work presents a study to build lumped models for fault-free and faulty Through Silicon Vias (TSVs). Three dimensional full-wave simulations are performed to extract equivalent circuit models. The effects of parametric and catastrophic faults due to pin-holes, voids and open circuits on the equivalent circuit models have been determined through 3D simulations. The extracted TSV models are then used to conduct delay tests to determine the required measurement resolution to detect TSV defects. It is shown that the substrate conductivity has a considerable effect on TSV fault characterization. It is also shown that, regardless of the substrate type, even a relatively large void does not alter the TSV resistance or its parasitic capacitance noticeably at 1GHz solution frequency. An on-chip test solution for TSV parametric faults requires a dedicated high resolution measurement circuit due to the minor variations of TSV circuit model parameters

High Speed Test Interface Module Using MEMS Technology

With the transient frequency of available CMOS technologies exceeding hundreds of gigahertz and the increasing complexity of Integrated Circuit (IC) designs, it is now apparent that the architecture of current testers needs to be greatly improved to keep up with the formidable challenges ahead. Test requirements for modern integrated circuits are becoming more stringent, complex and costly. These requirements include an increasing number of test channels, higher test-speeds and enhanced measurement accuracy and resolution. In a conventional test configuration, the signal path from Automatic Test Equipment (ATE) to the Device-Under-Test (DUT) includes long traces of wires. At frequencies above a few gigahertz, testing integrated circuits becomes a challenging task. The effects on transmission lines become critical requiring impedance matching to minimize signal reflection. AC resistance due to the skin effect and electromagnetic coupling caused by radiation can also become important factors affecting the test results. In the design of a Device Interface Board (DIB), the greater the physical separation of the DUT and the ATE pin electronics, the greater the distortion and signal degradation. In this work, a new Test Interface Module (TIM) based on MEMS technology is proposed to reduce the distance between the tester and device-under-test by orders of magnitude. The proposed solution increases the bandwidth of test channels and reduces the undesired effects of transmission lines on the test results. The MEMS test interface includes a fixed socket and a removable socket. The removable socket incorporates MEMS contact springs to provide temporary with the DUT pads and the fixed socket contains a bed of micro-pins to establish electrical connections with the ATE pin electronics. The MEMS based contact springs have been modified to implement a high-density wafer level test probes for Through Silicon Vias (TSVs) in three dimensional integrated circuits (3D-IC). Prototypes have been fabricated using Silicon On Insulator SOI wafer. Experimental results indicate that the proposed architectures can operate up to 50 GHz without much loss or distortion. The MEMS probes can also maintain a good elastic performance without any damage or deformation in the test phase

Signaling in 3-D integrated circuits, benefits and challenges

Three-dimensional (3-D) or vertical integration is a design and packaging paradigm that can mitigate many of the increasing challenges related to the design of modern integrated systems. 3-D circuits have recently been at the spotlight, since these circuits provide a potent approach to enhance the performance and integrate diverse functions within amulti-plane stack. Clock networks consume a great portion of the power dissipated in a circuit. Therefore, designing a low-power clock network in synchronous circuits is an important task. This requirement is stricter for 3-D circuits due to the increased power densities. Synchronization issues can be more challenging for 3-D circuits since a clock path can spread across several planes with different physical and electrical characteristics. Consequently, designing low power clock networks for 3-D circuits is an important issue. Resonant clock networks are considered efficient low-power alternatives to conventional clock distribution schemes. These networks utilize additional inductive circuits to reduce power while delivering a full swing clock signal to the sink nodes. In this research, a design method to apply resonant clocking to synthesized clock trees is proposed. Manufacturing processes for 3-D circuits include some additional steps as compared to standard CMOS processes which makes 3-D circuits more susceptible to manufacturing defects and lowers the overall yield of the bonded 3-D stack. Testing is another complicated task for 3-D ICs, where pre-bond test is a prerequisite. Pre-bond testability, in turn, presents new challenges to 3-D clock network design primarily due to the incomplete clock distribution networks prior to the bonding of the planes. A design methodology of resonant 3-D clock networks that support wireless pre-bond testing is introduced. To efficiently address this issue, inductive links are exploited to wirelessly transmit the clock signal to the disjoint resonant clock networks. The inductors comprising the LC tanks are used as the receiver circuit for the links, essentially eliminating the need for additional circuits and/or interconnect resources during pre-bond test. Recent FPGAs are quite complex circuits which provide reconfigurablity at the cost of lower performance and higher power consumption as compared to ASIC circuits. Exploiting a large number of programmable switches, routing structures are mainly responsible for performance degradation in FPAGs. Employing 3-D technology can providemore efficient switches which drastically improve the performance and reduce the power consumption of the FPGA. RRAM switches are one of the most promising candidates to improve the FPGA routing architecture thanks to their low on-resistance and non-volatility. Along with the configurable switches, buffers are the other important element of the FPGAs routing structure. Different characteristics of RRAM switches change the properties of signal paths in RRAM-based FPGAs. The on resistance of RRAMswitches is considerably lower than CMOS pass gate switches which results in lower RC delay for RRAM-based routing paths. This different nature in critical path and signal delay in turn affect the need for intermediate buffers. Thus the buffer allocation should be reconsidered. In the last part of this research, the effect of intermediate buffers on signal propagation delay is studied and a modified buffer allocation scheme for RRAM-based FPGA routing path is proposed

On Energy Efficient Computing Platforms

In accordance with the Moore's law, the increasing number of on-chip integrated transistors has enabled modern computing platforms with not only higher processing power but also more affordable prices. As a result, these platforms, including portable devices, work stations and data centres, are becoming an inevitable part of the human society. However, with the demand for portability and raising cost of power, energy efficiency has emerged to be a major concern for modern computing platforms. As the complexity of on-chip systems increases, Network-on-Chip (NoC) has been proved as an efficient communication architecture which can further improve system performances and scalability while reducing the design cost. Therefore, in this thesis, we study and propose energy optimization approaches based on NoC architecture, with special focuses on the following aspects. As the architectural trend of future computing platforms, 3D systems have many bene ts including higher integration density, smaller footprint, heterogeneous integration, etc. Moreover, 3D technology can signi cantly improve the network communication and effectively avoid long wirings, and therefore, provide higher system performance and energy efficiency. With the dynamic nature of on-chip communication in large scale NoC based systems, run-time system optimization is of crucial importance in order to achieve higher system reliability and essentially energy efficiency. In this thesis, we propose an agent based system design approach where agents are on-chip components which monitor and control system parameters such as supply voltage, operating frequency, etc. With this approach, we have analysed the implementation alternatives for dynamic voltage and frequency scaling and power gating techniques at different granularity, which reduce both dynamic and leakage energy consumption. Topologies, being one of the key factors for NoCs, are also explored for energy saving purpose. A Honeycomb NoC architecture is proposed in this thesis with turn-model based deadlock-free routing algorithms. Our analysis and simulation based evaluation show that Honeycomb NoCs outperform their Mesh based counterparts in terms of network cost, system performance as well as energy efficiency.Siirretty Doriast