Flexible sensors—from materials to applications

Flexible sensors have the potential to be seamlessly applied to soft and irregularly shaped surfaces such as the human skin or textile fabrics. This benefits conformability dependant applications including smart tattoos, artificial skins and soft robotics. Consequently, materials and structures for innovative flexible sensors, as well as their integration into systems, continue to be in the spotlight of research. This review outlines the current state of flexible sensor technologies and the impact of material developments on this field. Special attention is given to strain, temperature, chemical, light and electropotential sensors, as well as their respective applications

On improvements in metal oxide based flexible transistors through systematic evaluation of material properties

Thin-film metal oxide (MOx) semiconductors have opened the way to a new generation of electronics based on their unique properties. With mobilities, mu, of up to 80 cm2V-1s-1, metal oxides do not rival crystalline silicon (mu~1000 cm2V-1s-1) for complex applications. But such oxides do have three unique characteristics driving great interest: their mobilities persist in the amorphous form, contrary to the thousandfold drop seen in silicon; they are transparent; and they can be processed at, or near, room temperature. Most work on MOx semiconductors, in particular indium gallium zinc oxide (IGZO), has focused on display applications, where MOx thin-film transistors (TFTs) are used to drive individual pixels, reducing power consumption by blocking less light than alternatives, and allowing smaller pixels due to reduced TFT sizes. Such work has seen great advances in IGZO, but has generally not considered the thermal budget during production. By utilising the low temperature processing possible with MOx, a new world of applications becomes possible: flexible electronics. This work aims to improve the characteristics of TFTs based on amorphous IGZO (a-IGZO) through detailed study of the thin-film structure in relation to functional performance, looking at the material structure of three critical layers in an a-IGZO TFT. A study of optimisation of a dielectric layer of Al2O3, deposited by atomic layer deposition (ALD), is presented. This dielectric, between the a-IGZO and the gate electrode, shows a three-layer substructure in what has previously been regarded as a single homogeneous layer. A study of the insulating Al2O3 buffer layer below the a-IGZO compared the properties of Al2O3 deposited by ALD and sputtering. Sputtered material has a more complex structure than ALD, consisting of multiple sublayers that correlate with the sputtering process. The structure of the two materials is discussed, and the impact on device performance considered. A detailed systematic study of the effects of annealing of a-IGZO shows a strong dependence of the density on both time and temperature. A two mechanism model is proposed which consists of structural relaxation of the amorphous material followed by absorption of oxygen from the environment. Finally, investigation of the influence of the buffer material on the a-IGZO, and the structure of this interface showed little difference in the growth of the a-IGZO, but did reveal some changes in the interface, while a systematic study of annealing effects on the a-IGZO-dielectric interface showed some interesting changes in this structure, both of which are likely to significantly impact the operational characteristics of TFT devices

Large-area flexible electronics based on low-temperature solution-processed oxide semiconductors

Due to their high charge carrier mobility, optical transparency and mechanical flexibility, thin-film transistors (TFTs) based on metal oxide semiconductors represent an emerging technology that offers the potential to revolutionise the next-generations of large-area electronics. This thesis focuses on the development of high-performance TFTs based on low-temperature, solution-processed metal oxide semiconductors that are compatible with inexpensive flexible plastic substrates. The first part of the dissertation describes an ultraviolet light assisted processing method suitable for room-temperature activation of ZnO nanoparticles and their application as semiconducting channels in TFTs. The impact of the semiconductor/dielectric interface on electrical performance is studied using different device configurations and dielectric surface-passivation methods. Furthermore, a nanocomposite concept is proposed in order to assist electron transport between different crystalline domains. Using this approach, TFTs with electron mobilities of ~3 cm2/Vs are demonstrated. The second part of this work explores a carbon-free, aqueous-based Zn-ammine complex route for the synthesis of polycrystalline ZnO thin-films at low temperature and their subsequent use in TFTs. Concurrently, the development of a complementary high-κ oxide dielectric system enables the demonstration of high-performance ZnO TFTs with electron mobilities >10 cm2/Vs and operation voltage down to ~1.2 V. This low-temperature aqueous chemistry is further explored using a facile n-type doping approach. Enhancement in electrical performance is attributed to the different crystallographic properties of the Al-doped ZnO layers. The final part of the thesis introduces a novel TFT concept that exploits the enhanced electron transport properties of low-dimensional polycrystalline quasi-superlattices (QSLs), consisting of sequentially spin-cast layers of In2O3, Ga2O3 and ZnO deposited at temperatures 40 cm2/Vs - an order of magnitude higher than devices based on single binary oxide layers. Based on temperature dependent electron transport and capacitance-voltage measurements, it is reasoned that the enhanced electrical performance arises from the presence of quasi two-dimensional electron gas-like systems formed at the carefully engineered oxide heterointerfaces buried within the QSLs.Open Acces

Printed and drawn flexible electronics based on cellulose nanocomposites

Sustainability, flexibility, and low-power consumption are key features to meet the growing re- quirements of simplicity and multifunctionality of low-cost, disposable/recyclable smart electronic -of- -based composites hold po- tential to fulfill such demands when explored as substrate and/or electrolyte-gate, or as active channel layer on printed transistors and integrated circuits based on ionic responses (iontronics). In this work, a new generation of reusable, healable and recyclable regenerated cellulose hydro- gels with high ionic conductivity and conformability, capable of being provided in the form of stick- ers, are demonstrated. These hydrogels are obtained from a simple, fast, low-cost, and environ- mental-friendly aqueous alkali salt/urea dissolution method of native cellulose, combined with eration and simultaneous ion incorporation with acetic acid. Their electrochemical properties can be also merged with the mechanical robustness, thermal resistance, transparency, and smooth- - strate. Beyond gate dielectrics, a water-based screen-printable ink, composed of CMC binder and com- mercial zinc oxide (ZnO) semiconducting nanoparticles, was formulated. The ink enables the printing of relatively smooth and densely packed films on office paper with semiconducting func- tionality at room temperature. The rather use of porous ZnO nanoplates is beneficial to form per- colative pathways at lower contents of functional material, at the cost of rougher surfaces. The engineered cellulose composites are successfully integrated into flexible, recyclable, low- voltage (<3.5 V), printed electrolyte-gated office paper or on the ionically modified nanopaper. Ubiquitous calligraphy accessories are used -the- out on the target substrate, where are already printed the devices. Such concept paves the way for a worldwide boom of creativity, where we can freely create personal electronic kits, while having fun at it and without generating waste.Sustentabilidade, flexibilidade e baixo consumo energético são características chave para atender aos crescentes requisitos de simplicidade e multifuncionalidade de sistemas eletrónicos inteligentes de baixo custo, das- Compósitos à base de celulose têm potencial para atender a tais necessidades quando explora- dos como substrato e/ou porta-de-eletrólito ou como camada de canal ativo em transístores impressos e circuitos integrados baseados em respostas iónicas (iontronics). Neste trabalho, é demonstrada uma nova geração de hidrogéis reutilizáveis, reparáveis e recicláveis baseados em celulose regenerada, que apresentam alta condução iónica e conformabilidade, podendo ser fornecidos na forma de adesivos. Estes hidrogéis são obtidos a partir de um método simples, rápido, barato e amigo do ambiente que permite a dissolução de celulose nativa em soluções aquosas com mistura de sal alcalino e ureia, combinado com carboximetil celulose (CMC) para melhorar a sua robustez, seguido da regeneração e simultâneo enriquecimento iónico com ácido acético. As suas propriedades eletroquímicas podem ser combinadas com a inbase de celulose micro/nanofibrilada para obter um substrato eletrolítico semelhante a papel. Para além de portas-dielétricas, foi formulada uma tinta aquosa compatível com serigrafia, composta por CMC como espessante e nanopartículas semicondutoras de ZnO. A tinta permite a impressão de filmes pouco rugosos e densamente percolados sobre papel de escritório, e com funcionalidade semicondutora à temperatura ambiente. O uso alternativo de nanoplacas porosas de ZnO é benéfico para criar caminhos percolativos com menores teores de material funcional, apesar de se obter filmes rugosos. Os compósitos à base celulose foram integrados com sucesso em transístores e portas lógicas porta-eletrolítica, os quais foram impressos em papel de escritório ou no "nanopapel" iconicamente modificado. Acessórios de caligrafia permitem a fácil e rápida padronização de pistas condutoras/resistivas, desenhando-as no substrato alvo, onde estão impressos os dispositivos. Este conceito despoleta um mundo criativo, onde é possível criar livremente kits eletrónicos customizados de forma divertida e sem gerar resíduos

Toward Sustainable Transparent and Flexible Electronics with Amorphous Zinc Tin Oxide

The present thesis addresses a sustainable approach to mechanically flexible and transparent electronic devices based on the amorphous oxide semiconductor zinc tin oxide (ZTO) as abundant and low-cost alternative to already industrially established materials such as amorphous indium gallium zinc oxide. ZTO thin films are deposited by radio frequency long-throw magnetron sputtering at room temperature to generally enable the implementation of common photolithography processes and further facilitate patterning of digital circuit elements on thermally unstable organic substrates. Starting with the most basic device building blocks of integrated circuitry, various types of field-effect transistors are fabricated by implementation of amorphous ZTO as active channel material. Metal-semiconductor field-effect transistors and pn heterodiode based junctions field-effect transistors as well as conventional metal-insulatorsemiconductor field-effect transistors are then compared regarding their electrical performance and long-term stability over a couple of months. A decisive step toward the successful interconnection of fundamental digital circuit elements, such as previously demonstrated simple inverters, is to ensure sufficient output level compatibility between the signals of associated logic components. Accordingly, the Schottky diode field-effect transistor logic approach is adapted for amorphous ZTO based devices in order to facilitate cascading of multiple inverters consisting of unipolar devices. Field-effect transistor properties as well as the circuit design have been continuously improved to enhance the overall performance in terms of functionality and low-voltage operation. Corresponding logic inverters are finally integrated in ring oscillator circuits to gain insights into the dynamic properties of digital circuit building blocks based on amorphous ZTO. Ultimately, ZTO has been fabricated on mechanically flexible polyimide substrates to determine the elastic and electrical properties of amorphous ZTO thin films in dependence on external tensile and compressive stress induced by mechanical bending. Further, associated flexible metal-semiconductor field-effect transistor are investigated regarding their performance stability under tensile strain.Die vorliegende Arbeit umfasst die Herstellung und Charakterisierung aktiver elektrischer Bauelemente und integrierter Schaltkreise auf Basis des amorphen Oxidhalbleiters Zink-Zinnoxid (ZTO). Als vielversprechende nachhaltige und kostengünstigere Alternative zu dem bereits industriell etablierten Halbleiter Indium-Gallium-Zinkoxid wird insbesondere die Eignung von ZTO in optisch transparenter sowie mechanisch flexibler Elektronik untersucht. Um entsprechend Kompatibilität mit thermisch instabilen organischen Substraten sowie herkömmlichen Fotolithografieverfahren zu gewährleisten, beschränkt sich die Züchtung von ZTO-Dünnfilmen mittels Hochfrequenz-Magnetron-Distanzkathodenzerstäubung ausschließlich auf Herstellungsprozesse bei Raumtemperatur. Zunächst wird auf die Umsetzung verschiedener Feldeffekttransistor-Typen auf Basis amorphen ZTOs eingegangen, welche elektrisch charakterisiert und schließlich vor dem Hintergrund der Anwendung in integrierten Schaltkreisen vergleichend gegenübergestellt werden. Neben konventionellen Metall-Isolator-Halbleiterstrukturen wird vor allem näher auf Metall-Halbleiter-Feldeffekttransistoren sowie Sperrschicht-Feldeffekttransistoren auf der Grundlage von pn-Heteroübergängen eingegangen, da diese hauptsächlich in Bereichen hoher geforderter Schaltfrequenzen zum Einsatz kommen. Da integrierte Schaltkreise auf Basis unipolarer Feldeffekttransistoren eines Ladungsträgertyps inkonsistente Signaleingangs- sowie -ausgangspegel aufweisen, wird die Schottky- Dioden-Transistorlogik adaptiert, um entsprechend die Verknüpfung mehrerer Logikgatter auf Basis amorphen ZTOs zu gewährleisten. Durch geeignete Signalrückkopplung werden komplexere Schaltungen wie Ringoszillatoren realisiert, welche anhand von Laufzeitanalysen Aufschluss über die Schaltgeschwindigkeit ZTO basierter Feldeffekttransistoren geben. Abschließend werden amorphe ZTO-Dünnfilme auf flexiblen Polyimid-Substraten hergestellt und bezüglich der elastischen sowie elektrischen Eigenschaften in Abhängigkeit von exzessivem mechanischen Stress untersucht. Darüber hinaus werden flexible Metall-Halbleiter-Feldeffekttransistoren hinsichtlich ihrer Funktionalität und Stabilität gegenüber durch Biegeprozesse induzierte Verspannungen elektrisch charakterisiert

Metal oxide semiconductor thin-film transistors for flexible electronics

The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided

Novel Semiconducting Materials and Thin Film Technologies for High Energy Radiation Detection

Nowadays the development of real-time ionizing radiation detection system operating over large areas is crucial. Increasing quest for flexible, portable, low cost and low power consumption sensors pushed the scientific community to look for alternative materials and technologies able to fulfill these new requirements. In this thesis the potentiality of organic semiconductors and metal oxides as material platforms for novel ionizing radiation sensors is demonstrated. In particular, organic semiconductors are human tissue-equivalent and this represents a unique and desirable property for the development of dosimeters to be employed in the medical field. The ionizing radiation sensors described in this thesis have been designed, fabricated and characterized during my PhD research and are realized onto polymeric foils leading to flexible devices operating at low voltages, in ambient condition and able to directly detect X-rays, gamma-rays and protons. Following the study of the properties and of the mechanisms of interaction between the radiation and the active layers of the sensors, several strategies have been adopted to enhance the efficiency of these detectors. X-rays dosimeters based on organic semiconductors have been realized presenting record sensitivity values compared with the state of the art for large area radiation detection. The unprecedentedly reported performance led to the possibility to testing these devices in actual medical environments. Moreover, the proof-of-principle demonstration of a dosimetric detection of proton beams by organic-based sensors is reported. Finally, a new sensing platform based on metal oxides is introduced. Combining the advantages of amorphous high mobility oxide semiconductors with a multilayer dielectric, novel devices have been designed, capable of providing a sensitivity one order of magnitude higher than the one shown by the standard RADFETs. Thanks to their unique properties, these sensors have been integrated with a wireless readout system based on a commercial RFID tag and its assessment is presented