Integrated Circuit Design for Hybrid Optoelectronic Interconnects

This dissertation focuses on high-speed circuit design for the integration of hybrid optoelectronic interconnects. It bridges the gap between electronic circuit design and optical device design by seamlessly incorporating the compact Verilog-A model for optical components into the SPICE-like simulation environment, such as the Cadence design tool. Optical components fabricated in the IME 130nm SOI CMOS process are characterized. Corresponding compact Verilog-A models for Mach-Zehnder modulator (MZM) device are developed. With this approach, electro-optical co-design and hybrid simulation are made possible. The developed optical models are used for analyzing the system-level specifications of an MZM based optoelectronic transceiver link. Link power budgets for NRZ, PAM-4 and PAM-8 signaling modulations are simulated at system-level. The optimal transmitter extinction ratio (ER) is derived based on the required receiver\u27s minimum optical modulation amplitude (OMA). A limiting receiver is fabricated in the IBM 130 nm CMOS process. By side- by-side wire-bonding to a commercial high-speed InGaAs/InP PIN photodiode, we demonstrate that the hybrid optoelectronic limiting receiver can achieve the bit error rate (BER) of 10-12 with a -6.7 dBm sensitivity at 4 Gb/s. A full-rate, 4-channel 29-1 length parallel PRBS is fabricated in the IBM 130 nm SiGe BiCMOS process. Together with a 10 GHz phase locked loop (PLL) designed from system architecture to transistor level design, the PRBS is demonstrated operating at more than 10 Gb/s. Lessons learned from high-speed PCB design, dealing with signal integrity issue regarding to the PCB transmission line are summarized

High-speed communication circuits: voltage control oscillators and VCO-derived filters

Voltage Controlled Oscillators (VCO) and filters are the two main topics of focus in this dissertation.;A temperature and process compensated VCO, which is designed to operate at 2 GHz, and whose frequency variation due to incoming data is limited to 1% of its center frequency was presented. The test results show that, without process changes present, the frequency variation due to a temperature change over 0°C to 100°C is around 1.1% of its center frequency. This is a reduction of a factor of 10 when compared to the temperature variation of a conventional VCO.;A new method of designing continuous-time monolithic filters derived from well-known voltage controlled oscillators (VCOs) was introduced. These VCO-derived filters are capable of operating at very high frequencies in standard CMOS processes. Prototype low-pass and band-pass filters designed in a TSMC 0.25 mum process are discussed. Simulation results for the low-pass filter designed for a cutoff frequency of 4.3 GHz show a THD of -40 dB for a 200 mV peak-peak sinusoidal input. The band-pass filter has a resonant frequency programmable from 2.3 GHz to 3.1 GHz, a programmable Q from 3 to 85, and mid-band THD of -40 dB for an 80 mV peak-peak sinusoidal input signal.;A third contribution in this dissertation was the design of a new current mirror with accurate mirror gain for low beta bipolar transistors. High mirror gain accuracy is achieved by using a split-collector transistor to compensate for base currents of the source-coupled

A wide dynamic range high-q high-frequency bandpass filter with an automatic quality factor tuning scheme

An 80 MHz bandpass filter with a tunable quality factor of 16∼44 using an improved transconductor circuit is presented. A noise optimized biquad structure for high-Q, high- frequency bandpass filter is proposed. The quality factor of the filter is tuned using a new quality factor locked loop algorithm. It was shown that a second-order quality factor locked loop is necessary and sufficient to tune the quality factor of a bandpass filter with zero steady state error. The accuracy, mismatch, and sensitivty analysis of the new tuning scheme was performed and analyzed. Based on the proposed noise optimized filter structure and new quality factor tuning scheme, a biquad filter was designed and fabricated in 0.25 μm BiCMOS process. The measured results show that the biquad filter achieves a SNR of 45 dB at IMD of 40 dB. The P-1dB compression point and IIP3 of the filter are -10 dBm and -2.68 dBm, respectively. The proposed biquad filter and quality factor tuning scheme consumes 58mW and 13 mW of power at 3.3 V supply.Ph.D.Committee Chair: Allen Phillip; Committee Member: Hasler Paul; Committee Member: Keezer David; Committee Member: Kenny James; Committee Member: Pan Ronghu

RF MEMS reference oscillators platform for wireless communications

A complete platform for RF MEMS reference oscillator is built to replace bulky quartz from mobile devices, thus reducing size and cost. The design targets LTE transceivers. A low phase noise 76.8 MHz reference oscillator is designed using material temperature compensated AlN-on-silicon resonator. The thesis proposes a system combining piezoelectric resonator with low loading CMOS cross coupled series resonance oscillator to reach state-of-the-art LTE phase noise specifications. The designed resonator is a two port fundamental width extensional mode resonator. The resonator characterized by high unloaded quality factor in vacuum is designed with low temperature coefficient of frequency (TCF) using as compensation material which enhances the TCF from - 3000 ppm to 105 ppm across temperature ranges of -40˚C to 85˚C. By using a series resonant CMOS oscillator, phase noise of -123 dBc/Hz at 1 kHz, and -162 dBc/Hz at 1MHz offset is achieved. The oscillator’s integrated RMS jitter is 106 fs (10 kHz–20 MHz), consuming 850 μA, with startup time is 250μs, achieving a Figure-of-merit (FOM) of 216 dB. Electronic frequency compensation is presented to further enhance the frequency stability of the oscillator. Initial frequency offset of 8000 ppm and temperature drift errors are combined and further addressed electronically. A simple digital compensation circuitry generates a compensation word as an input to 21 bit MASH 1 -1-1 sigma delta modulator incorporated in RF LTE fractional N-PLL for frequency compensation. Temperature is sensed using low power BJT band-gap front end circuitry with 12 bit temperature to digital converter characterized by a resolution of 0.075˚C. The smart temperature sensor consumes only 4.6 μA. 700 MHz band LTE signal proved to have the stringent phase noise and frequency resolution specifications among all LTE bands. For this band, the achieved jitter value is 1.29 ps and the output frequency stability is 0.5 ppm over temperature ranges from -40˚C to 85˚C. The system is built on 32nm CMOS technology using 1.8V IO device

A high speed serializer/deserializer design

A Serializer/Deserializer (SerDes) is a circuit that converts parallel data into a serial stream and vice versa. It helps solve clock/data skew problems, simplifies data transmission, lowers the power consumption and reduces the chip cost. The goal of this project was to solve the challenges in high speed SerDes design, which included the low jitter design, wide bandwidth design and low power design. A quarter-rate multiplexer/demultiplexer (MUX/DEMUX) was implemented. This quarter-rate structure decreases the required clock frequency from one half to one quarter of the data rate. It is shown that this significantly relaxes the design of the VCO at high speed and achieves lower power consumption. A novel multi-phase LC-ring oscillator was developed to supply a low noise clock to the SerDes. This proposed VCO combined an LC-tank with a ring structure to achieve both wide tuning range (11%) and low phase noise (-110dBc/Hz at 1MHz offset). With this structure, a data rate of 36 Gb/s was realized with a measured peak-to-peak jitter of 10ps using 0.18microm SiGe BiCMOS technology. The power consumption is 3.6W with 3.4V power supply voltage. At a 60 Gb/s data rate the simulated peak-to-peak jitter was 4.8ps using 65nm CMOS technology. The power consumption is 92mW with 2V power supply voltage. A time-to-digital (TDC) calibration circuit was designed to compensate for the phase mismatches among the multiple phases of the PLL clock using a three dimensional fully depleted silicon on insulator (3D FDSOI) CMOS process. The 3D process separated the analog PLL portion from the digital calibration portion into different tiers. This eliminated the noise coupling through the common substrate in the 2D process. Mismatches caused by the vertical tier-to-tier interconnections and the temperature influence in the 3D process were attenuated by the proposed calibration circuit. The design strategy and circuits developed from this dissertation provide significant benefit to both wired and wireless applications

Process and Temperature Compensated Wideband Injection Locked Frequency Dividers and their Application to Low-Power 2.4-GHz Frequency Synthesizers

There has been a dramatic increase in wireless awareness among the user community in the past five years. The 2.4-GHz Industrial, Scientific and Medical (ISM) band is being used for a diverse range of applications due to the following reasons. It is the only unlicensed band approved worldwide and it offers more bandwidth and supports higher data rates compared to the 915-MHz ISM band. The power consumption of devices utilizing the 2.4-GHz band is much lower compared to the 5.2-GHz ISM band. Protocols like Bluetooth and Zigbee that utilize the 2.4-GHz ISM band are becoming extremely popular. Bluetooth is an economic wireless solution for short range connectivity between PC, cell phones, PDAs, Laptops etc. The Zigbee protocol is a wireless technology that was developed as an open global standard to address the unique needs of low-cost, lowpower, wireless sensor networks. Wireless sensor networks are becoming ubiquitous, especially after the recent terrorist activities. Sensors are employed in strategic locations for real-time environmental monitoring, where they collect and transmit data frequently to a nearby terminal. The devices operating in this band are usually compact and battery powered. To enhance battery life and avoid the cumbersome task of battery replacement, the devices used should consume extremely low power. Also, to meet the growing demands cost and sized has to be kept low which mandates fully monolithic implementation using low cost process. CMOS process is extremely attractive for such applications because of its low cost and the possibility to integrate baseband and high frequency circuits on the same chip. A fully integrated solution is attractive for low power consumption as it avoids the need for power hungry drivers for driving off-chip components. The transceiver is often the most power hungry block in a wireless communication system. The frequency divider (prescaler) and the voltage controlled oscillator in the transmitter’s frequency synthesizer are among the major sources of power consumption. There have been a number of publications in the past few decades on low-power high-performance VCOs. Therefore this work focuses on prescalers. A class of analog frequency dividers called as Injection-Locked Frequency Dividers (ILFD) was introduced in the recent past as low power frequency division. ILFDs can consume an order of magnitude lower power when compared to conventional flip-flop based dividers. However the range of operation frequency also knows as the locking range is limited. ILFDs can be classified as LC based and Ring based. Though LC based are insensitive to process and temperature variation, they cannot be used for the 2.4-GHz ISM band because of the large size of on-chip inductors at these frequencies. This causes a lot of valuable chip area to be wasted. Ring based ILFDs are compact and provide a low power solution but are extremely sensitive to process and temperature variations. Process and temperature variation can cause ring based ILFD to loose lock in the desired operating band. The goal of this work is to make the ring based ILFDs useful for practical applications. Techniques to extend the locking range of the ILFDs are discussed. A novel and simple compensation technique is devised to compensate the ILFD and keep the locking range tight with process and temperature variations. The proposed ILFD is used in a 2.4-GHz frequency synthesizer that is optimized for fractional-N synthesis. Measurement results supporting the theory are provided

Novel Current-Mode Sensor Interfacing and Radio Blocks for Cell Culture Monitoring

Since 2004 Imperial College has been developing the world’s first application-specific instrumentation aiming at the on-line, in-situ, physiochemical monitoring of adult stem cell cultures. That effort is internationally known as the ‘Intelligent Stem Cell Culture Systems’ (ISCCS) project. The ISCCS platform is formed by the functional integration of biosensors, interfacing electronics and bioreactors. Contrary to the PCB-level ISCCS platform the work presented in this thesis relates to the realization of a miniaturized cell culture monitoring platform. Specifically, this thesis details the synthesis and fabrication of pivotal VLSI circuit blocks suitable for the construction of a miniaturized microelectronic cell monitoring platform. The thesis is composed of two main parts. The first part details the design and operation of a two-stage current-input currentoutput topology suitable for three-electrode amperometric sensor measurements. The first stage is a CMOS-dual rail-class AB-current conveyor providing a low impedancevirtual ground node for a current input. The second stage is a novel hyperbolic-sinebased externally-linear internally-non-linear current amplification stage. This stage bases its operation upon the compressive sinh−1 conversion of the interfaced current to an intermediate auxiliary voltage and the subsequent sinh expansion of the same voltage. The proposed novel topology has been simulated for current-gain values ranging from 10 to 1000 using the parameters of the commercially available 0.8μm AMS CMOS process. Measured results from a chip fabricated in the same technology are also reported. The proposed interfacing/amplification architecture consumes 0.88-95μW. The second part describes the design and practical evaluation of a 13.56MHz frequency shift keying (FSK) short-range (5cm) telemetry link suitable for the monitoring of incubated cultures. Prior to the design of the full FSK radio system, a pair of 13.56MHz antennae are characterized experimentally. The experimental S-parameter-value determination of the 13.56MHz wireless link is incorporated into the Cadence Design Framework allowing a high fidelity simulation of the reported FSK radio. The transmitter of the proposed system is a novel multi-tapped seven-stage ring-oscillator-based VCO whereas the core of the receiver is an appropriately modified phase locked loop (PLL). Simulated and measured results from a 0.8μm CMOS technology chip are reported

Low phase noise 2 GHz Fractional-N CMOS synthesizer IC

Low noise low division 2 GHz RF synthesizer integrated circuits (ICs) are conventionally implemented in some form of HBT process such as SiGe or GaAs. The research in this dissertation differs from convention, with the aim of implementing a synthesizer IC in a more convenient, low-cost Si-based CMOS process. A collection of techniques to push towards the noise and frequency limits of CMOS processes, and possibly other IC processes, is then one of the research outcomes. In a synthesizer low N-divider ratios are important, as high division ratios would amplify in-band phase noise. The design methods deployed as part of this research achieve low division ratios (4 ≤ N ≤ 33) and a high phase comparison frequency (>100 MHz). The synthesizer IC employs a first-order fractional-N topology to achieve increased frequency tuning resolution. The primary N-divider was implemented utilising current mode logic (CML) and the fractional accumulator utilising conventional CMOS. Both a conventional CMOS phase frequency detector (PFD) and a CML PFD were implemented for benchmarking purposes. A custom-built 4.4 GHz synthesizer circuit employing the IC was used to validate the research. In the 4.4 GHz synthesizer circuit, the prototype IC achieved a measured in-band phase noise plateau of L( f ) = -113 dBc/Hz at a 100 kHz frequency offset, which equates to a figure of merit (FOM) of -225 dBc/Hz. The FOM compares well with existing, but expensive, SiGe and GaAs HBT processes. Total IC power dissipation was 710 mW, which is considerably less than commercially available GaAs designs. The complete synthesizer IC was implemented in Austriamicrosystems‟ (AMS) 0.35 μm CMOS process and occupies an area of 3.15 x 2.18 mm2.Dissertation (MEng)--University of Pretoria, 2010.Electrical, Electronic and Computer Engineeringunrestricte