Nanowire Volatile RAM as an Alternative to SRAM

Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage power control are critical issues. To alleviate some of these challenges a novel non-volatile memory alternative to SRAM was proposed called nanowire volatile RAM (NWRAM). Due to NWRAMs regular grid based layout and innovative circuit style, manufacturing complexity is reduced and at the same time considerable benefits are attained in terms of performance and leakage power reduction. In this paper, we elaborate more on NWRAM circuit aspects and manufacturability, and quantify benefits at 16nm technology node through simulation against state-of-the-art 6T-SRAM and gridded 8T-SRAM designs. Our results show the 10T-NWRAM to be 2x faster and 35x better in terms of leakage when compared to high performance gridded 8T-SRAM design

Plasmonic modulator optimized by patterning of active layer and tuning permittivity

We study an ultra-compact plasmonic modulator that can be applied in photonic integrated circuits. The modulator is a metal-insulator-metal waveguide with an additional ultra-thin layer of indium tin oxide (ITO). Bias is applied to the multilayer core by means of metal plates that serve as electrodes. External field changes carrier density in the ultra-thin ITO layer, which influences the permittivity. The metal-insulator-metal system possesses a plasmon resonance, and it is strongly affected by changes in the permittivity of the active layer. To improve performance of the structure we propose several optimizations. We examine influence of the ITO permittivity on the modulator's performance and point out appropriate values. We analyze eigenmodes of the waveguide structure and specify the range for its efficient operation. We show that substituting the continuous active layer by a one-dimension periodic stripes increases transmittance through the device and keeps the modulator's performance at the same level. The dependence on the pattern size and filling factor of the active material is analyzed and optimum parameters are found. Patterned ITO layers allow us to design a Bragg grating inside the waveguide. The grating can be turned on and off, thus modulating reflection from the structure. The considered structure with electrical control possesses a high performance and can efficiently work as a plasmonic component in nanophotonic architectures.Comment: Optics Communications (2012

Diameter-Selective Dispersion of Carbon Nanotubes via Polymers: A Competition between Adsorption and Bundling

The mechanism of the selective dispersion of single-walled carbon nanotubes (CNTs) by polyfluorene polymers is studied in this paper. Using extensive molecular dynamics simulations, it is demonstrated that diameter selectivity is the result of a competition between bundling of CNTs and adsorption of polymers on CNT surfaces. The preference for certain diameters corresponds to local minima of the binding energy difference between these two processes. Such minima in the diameter dependence occur due to abrupt changes in the CNT's coverage with polymers and their calculated positions are in quantitative agreement with preferred diameters, reported experimentally. The presented approach defines a theoretical framework for the further understanding and improvement of dispersion/extraction processes.Comment: 22 pages, 5 figures, ACS Nano (2015

Efficient, designable, and broad-bandwidth optical extinction via aspect-ratio-tailored silver nanodisks

Subwavelength resonators, ranging from single atoms to metallic nanoparticles, typically exhibit a narrow-bandwidth response to optical excitations. We computationally design and experimentally synthesize tailored distributions of silver nanodisks to extinguish light over broad and varied frequency windows. We show that metallic nanodisks are two-to-ten-times more efficient in absorbing and scattering light than common structures, and can approach fundamental limits to broadband scattering for subwavelength particles. We measure broadband extinction per volume that closely approaches theoretical predictions over three representative visible-range wavelength windows, confirming the high efficiency of nanodisks and demonstrating the collective power of computational design and experimental precision for developing new photonics technologies

Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires

We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs). These NWs are lithographically patterned from a 50 nm thick SiC layer heteroepitaxially grown on single-crystal silicon (Si). Several generic designs of in-plane electrostatic SiC NW switches have been realized, with NW widths as small as ~20 nm and lateral switching gaps as narrow as ~10 nm. Very low switch-on voltages are obtained, from a few volts down to ~1 V level. Two-terminal, contact-mode “hot” switching with high on/off ratios (>10^2 or 10^3) has been demonstrated repeatedly for many devices. We find enhanced switching performance in bare SiC NWs, with lifetimes exceeding those based on metallized SiC NWs

Towards improved exact exchange functionals relying on GW quasiparticle methods for parametrization

We use fully self-consistent GW calculations on diamond and silicon carbide to reparametrize the Heyd-Scuseria-Ernzerhof exact exchange density functional for use in band structure calculations of semiconductors and insulators. We show that the thus modified functional is able to calculate the band structure of bulk Si, Ge, GaAs, and CdTe with good quantitative accuracy at a significantly reduced computational cost as compared to GW methods. We discuss the limitations of this functional in low-dimensions by calculating the band structures of single-layer hexagonal BN and MoS$_{2}$, and by demonstrating that the diameter scaling of curvature induced band gaps in single-walled carbon nanotubes is still physically incorrect using our functional; we consider possible remedies to this problem.Comment: Submitted to Physical Review