An 11 mA Capacitor-Less LDO With 3.08 nA Quiescent Current and SSF-Based Adaptive Biasing

This brief presents an ultra-low power low-dropout (LDO) regulator with an experimental total quiescent current consumption of only 3.08 nA. The circuit is designed to operate with a load current in the range 0 - 11 mA. A novel adaptive biasing scheme based on a super source follower (SSF) structure is proposed, which measures the absolute voltage difference between the two inputs of the LDO’s error amplifier and modifies the biasing current accordingly. Thus, the transient response of the regulator is improved by counteracting the effect of using such a low bias current. The proposed LDO has been fabricated in a standard CMOS 180 nm process and the experimental characterization showed an outstanding performance in terms of maximum load current over quiescent current consumption ratio.S

Ultra-low Quiescent Current NMOS Low Dropout Regulator With Fast Transient response for Always-On Internet-of-Things Applications

abstract: The increased adoption of Internet-of-Things (IoT) for various applications like smart home, industrial automation, connected vehicles, medical instrumentation, etc. has resulted in a large scale distributed network of sensors, accompanied by their power supply regulator modules, control and data transfer circuitry. Depending on the application, the sensor location can be virtually anywhere and therefore they are typically powered by a localized battery. To ensure long battery-life without replacement, the power consumption of the sensor nodes, the supply regulator and, control and data transmission unit, needs to be very low. Reduction in power consumption in the sensor, control and data transmission is typically done by duty-cycled operation such that they are on periodically only for short bursts of time or turn on only based on a trigger event and are otherwise powered down. These approaches reduce their power consumption significantly and therefore the overall system power is dominated by the consumption in the always-on supply regulator. Besides having low power consumption, supply regulators for such IoT systems also need to have fast transient response to load current changes during a duty-cycled operation. Supply regulation using low quiescent current low dropout (LDO) regulators helps in extending the battery life of such power aware always-on applications with very long standby time. To serve as a supply regulator for such applications, a 1.24 µA quiescent current NMOS low dropout (LDO) is presented in this dissertation. This LDO uses a hybrid bias current generator (HBCG) to boost its bias current and improve the transient response. A scalable bias-current error amplifier with an on-demand buffer drives the NMOS pass device. The error amplifier is powered with an integrated dynamic frequency charge pump to ensure low dropout voltage. A low-power relaxation oscillator (LPRO) generates the charge pump clocks. Switched-capacitor pole tracking (SCPT) compensation scheme is proposed to ensure stability up to maximum load current of 150 mA for a low-ESR output capacitor range of 1 - 47µF. Designed in a 0.25 µm CMOS process, the LDO has an output voltage range of 1V – 3V, a dropout voltage of 240 mV, and a core area of 0.11 mm2.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

An external capacitor-less low-dropout voltage regulator using a transconductance amplifier

This paper presents an external capacitor-less NMOS low-dropout (LDO) voltage regulator integrated with a standard CSMC 0.6 μm BiCMOS technology. Over a -55 ∘C to +125 ∘C temperature range, the fabricated LDO provides a stable and considerable amount of 3 A output current over wide ranges of output capacitance COUT (from zero to hundreds of μF ) and effective-series-resistance (ESR) (from tens of milliohms to several ohms). A low dropout voltage of 200 mV has been realised by accurate modelling. Operating with an input voltage ranging from 2.2 V to 5.5 V provides a scalable output voltage from 0.8 V to 3.6 V. When the load current jumps from 100 mA to 3 A within 3 μs, the output voltage overshoot remains as low as 50 mV without output capacitance, COUT. The system bandwidth is about 2 MHz, and hardly changes with load altering to ensure system stability. To improve the load transient response and driving capacity of the NMOS power transistor, a buffer with high input impedance and low output impedance is applied between the transconductance amplifier and the NMOS power transistor. The total area of fabricated LDO voltage regulator chip including pads is 2.1 mm×2.2 mm

0.6-V-VIN 7.0-nA-IQ 0.75-mA-IL CMOS Capacitor-Less LDO for Low-Voltage Micro-Energy-Harvested Supplies

A capacitor-less (CL) low-dropout (LDO) regulator suitable to be incorporated in an on-chip system with low-voltage micro-energy-harvested supply, is proposed in this contribution. The differential input stage of the error amplifier includes bulk-driven MOS transistors, thus providing the LDO with an output voltage range that extends from the negative rail up to a level very close to the input voltage without the need of using a resistive feedback network. The circuit parameters relying on the feedback factor, , are maximized thanks to the use of a unitary value for this parameter. The CL-LDO has been designed and fabricated in standard 180-nm CMOS technology and optimized to operate with an input voltage equal to 0.6 V and a reference level of 0.5 V. The experimental characterization of the fabricated prototypes shows that, under these operating conditions, the LDO is able to deliver a load current above 0.75 mA with a total quiescent current of only 7.0 nA. Furthermore, the proposed voltage regulator is able to operate from input voltages as low as 0.4 V, delivering in this case a maximum load current of 30 μA.RTI2018- 095994-B-I00 ED431G-2019/04 GRC2021/48 IB18079S

Fast-transient radiation-hardened low-dropout voltage regulator for space applications

This paper presents a fast-transient radiation-hardened low-dropout (LDO) voltage regulator integrated in a standard CSMC 0.6 μm BiCMOS technology for space and other harsh radiation environments applications. The fabricated LDO consumes 150 μA quiescent current at 6 A maximum output current. A low dropout voltage of 300 mV which corresponds to an ultra-low RDS(ON) resistance of 50 mΩ is realized by accurate modeling. A separate fast-transient response circuit under narrow-bandwidth condition is proposed to improve the output voltage transient speed. It operates from an input voltage range of 2.8 V to 5.5 V and provides for output voltage of 2.5 V, with output voltage accuracy of ±2%. The proposed LDO achieves a successful line regulation of 1 mV/V, and a load regulation of 2.16 mV/A. Novel radiation-hardened layout techniques are applied to realise high area-efficient LDO chip, whose total area including pads is 5.35 mm2, only about one-third area of similar radiationhardened products. Total ionising dose (TID) experiments were conducted at China Academy of Engineering Physics, Mianyang of Sichuan province. Furthermore, a special set of single event latch-up (SEL) experiments were performed at the Heavy Ion Research Facility in Lanzhou (HIRFL), Institute of Modern Physics, Chinese Academy of Sciences, the most advanced heavy ion accelerator of China. The measurement results show that the LDO can tolerate up to a total ionising dose (TID) of 150 krad (Si) and SEL immunity at a linear energy transfer (LET) of 99.8 MeV/(mg/cm2) with proposed novel layout design

메모리 어플리케이션을 위한 빠른 과도 응답 성능을 가지는 디지털 낮은 드롭아웃 레귤레이터 설계

학위논문(박사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2023. 2. 정덕균.In this dissertation, the design of a fast transient response digital low-dropout regulator (DLDO) applicable to next-generation memory systems is discussed. Recent technologies in memory systems mainly aim at high power density and fast data rate. Accordingly, the need for a power converter withstanding a large amount of load current change in a short period is increased. Accordingly, a solution for compensating for a voltage drop that causes significant damage to a memory data input/output is searched according to a periodic clock signal. With this situation, two structures that achieve fast transient response performance under the constraints of memory systems are proposed. To mitigate the transient response degradation under slow external clock conditions, an adaptive two-step search algorithm with event-driven approaches DLDO is proposed. The technique solves the limitations of loop operation time dependent on slow external clocks through a ring-amplifier-based continuous-time comparator. Also, shift register is designed as a circular structure with centralized control of each register to reduce the cost. Finally, the remaining regulation error is controlled by an adaptive successive approximation algorithm to minimize the settling time. Fast recovery and settling time are shown through the measurement of the prototype chip implemented by the 40-nm CMOS process. Next, a digital low dropout regulator for ultra-fast transient response is designed. A slope-detector-based coarse controller to detect, compensate, and correct load current changes occurring at every rising or falling edge of tens to hundreds of megahertz clocks is proposed. Compensation efficiency is increased by the method according to the degree of change in load voltage over time. Furthermore, the LUT-based shift register enables the fast loop response speed of the DLDO. Finally, a bidirectional latch-based driver with fast settling speed and high resolution are proposed. The prototype chip is implemented with a 40-nm CMOS process and achieves effective load voltage recovery through fast transient response performance even with low load capacitance.본 논문은 차세대 메모리 시스템에 적용 가능한 빠른 과도 응답 성능을 가지는 디지탈 낮은 드롭아웃 레귤레이터의 설계에 대해 기술한다. 메모리 시스템의 최근 기술들은 높은 전력 밀도와 빠른 데이터 속도를 주된 목표로 하며 이에 맞추어 단기간, 많은 양의 부하 전류 변화를 견디는 파워 컨버터의 필요성이 높아지고 있다. 이에 주기적인 클락 신호에 따라 메모리 데이터 입출력에 유의미한 손상을 발생시키는 전압 강하를 보상하는 해결 방안을 탐색한다. 이를 통해 메모리 시스템이 가지는 제약조건 하에서 빠른 과도 응답 성능을 달성하는 두 가지 구조를 제안한다. 첫 번째 시연으로서, 느린 외부 클락 조건에서 유발되는 디지탈 낮은 드롭아웃 레귤레이터의 과도 응답 성능 저하를 완화시키기 위한 이벤트 주도 방식의 적응형 두 단계 서치 기술을 제안한다. 본 기술은 느린 외부클락에 의존한 루프 동작 시간의 한계를 고리 증폭기 기반 연속 시간 비교기를 통해 해결한다. 또한 자리 이동 레지스터의 구현에 소모되는 비용을 줄이고자 각 레지스터의 제어 장치를 중앙으로 집적시킨 순환형 구조로 설계되었다. 마지막으로 남아있는 조정 에러는 적응방식의 축차 비교형 알고리즘으로 제어하여 교정에 필요한 시간을 최소화하였다. 40-nm CMOS 공정으로 구현된 프로토타입 칩의 측정을 통해 부하 전압의 빠른 회복 속도와 정정시간을 보임을 확인하였다. 두 번째 시연으로서, 초고속 과도 응답 환경에 적합한 디지털 낮은 드롭아웃 레귤레이터가 설계되었다. 수십~수백 메가헤르쯔 클락의 상승 또는 하강 엣지마다 발생하는 부하 전류 변화를 탐지하고 보상하고 정정하기 위해 기울기 탐지기 기반 coarse 제어기 기술을 제안한다. 시간에 따른 부하 전압 변화의 정도에 따라 차등 보상하는 알고리즘을 적용함으로써 보상 효율을 높였다. 나아가 순람표 기반 자리이동 레지스터는 부하 전류 과도 상태 이후 디지탈 레귤레이터의 빠른 루프 응답 속도를 가능케 하였다. 마지막으로 남은 조정 에러를 제어하는데 있어서 기존 자리이동 레지스터 방식에서 벗어나 빠른 수렴 속도와 높은 해상도를 가지는 양방향 래치 기반 드라이버가 제안되었다. 해당 프로토타입 칩은 40-nm CMOS 공정으로 구현되었으며, 낮은 부하 축전용량에도 빠른 과도 응답 성능을 통해 효과적인 부하 전압 회복을 이루어 내었다.CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 VARIOUS TYPES OF LDO 4 1.2.1 ANALOG LDO VS. DIGITAL LDO 4 1.2.2 CAP LDO VS. CAP-LESS LDO 6 1.3 THESIS ORGANIZATION 8 CHAPTER 2 BACKGROUNDS ON DIGITAL LOW-DROPOUT REGULATOR 9 2.1 BASIC DIGITAL LOW-DROPOUT REGULATOR 9 2.2 FAST TRANSIENT RESPONSE LOW-DROPOUT REGULATOR 12 2.2.1 RESPONSE TIME 13 2.2.1 SETTLING TIME 20 2.3 VARIOUS METHODS FOR IMPLEMENT FAST TRANSIENT DIGITAL LDO 21 2.3.1 EVENT-DRIVEN DIGITAL LDO 21 2.3.2 FEEDFORWARD CONTROL 23 2.3.3 COMPUTATIONAL DIGITAL LDO 25 2.4 DESIGN POINTS OF FAST TRANSIENT RESPONSE DIGITAL LDO 27 CHAPTER 3 A FAST DROOP-RECOVERY EVENT-DRIVEN DIGITAL LDO WITH ADAPTIVE LINEAR/BINARY TWO-STEP SEARCH FOR VOLTAGE REGULATION IN ADVANCED MEMORY 29 3.1 OVERVIEW 29 3.2 PROPOSED DIGITAL LDO 32 3.2.1 MOTIVATION 32 3.2.2 ALSC WITH TWO-DIMENSIONAL CIRCULAR SHIFTING REGISTER 36 3.2.3 SBSC WITH SUBRANGE SUCCESSIVE-APPROXIMATION REGISTER 39 3.2.4 STABILITY ANALYSIS 41 3.3 CIRCUIT IMPLEMENTATION 44 3.3.1 TIME-INTERLEAVED RING-AMPLIFIER-BASED COMPARATOR 44 3.3.2 ASYNCHRONOUS 2D CIRCULAR SHIFTING REGISTER 49 3.3.3 SUBRANGE SUCCESSIVE APPROXIMATION REGISTER 51 3.4 MESUREMENT RESULTS 54 CHAPTER 4 A FAST TRANSIENT RESPONSE DIGITAL LOW-DROPOUT REGULATOR WITH SLOPE-DETECTOR-BASED MULTI-STEP CONTROL FOR DIGITAL LOAD APPLICATION 62 4.1 OVERVIEW 62 4.2 PROPOSED DIGITAL LDO 64 4.2.1 MOTIVATION 64 4.2.2 ARCHITECTURE OF DIGITAL LDO 66 4.2.3 SLEW-RATE DEPENDENT COARSE-CONTROL LOOP 69 4.2.4 FINE-CONTROL LOOP 72 4.2.5 CONTROL FOR LOAD-TRANSIENT RESPONSE 74 4.3 CIRCUIT IMPLEMENTATION 77 4.3.1 COMPARATOR-TRIGGERED OSCILLATOR DESIGN 77 4.3.2 SLOPE DETECTOR DESIGN 81 4.3.3 LUT-BASED SHIFT REGISTER DESIGN 84 4.3.4 BI-DIRECTIONAL LATCH-BASED DRIVER DESIGN 86 4.4 MEASUREMENT(SIMULATION) RESULTS 90 CHAPTER 5 CONCLUSION 95 BIBLIOGRAPHY 97 초 록 109박

CMOS Integrated Circuits for RF-powered Wireless Temperature Sensor

This dissertation presents original research contributions in the form of twelve scientific publications that represent advances related to RF-to-DC converters, reference circuits (voltage, current and frequency) and temperature sensors. The primary focus of this research was to design efficient and low power CMOS-based circuit components, which are useful in various blocks of an RF-powered wireless sensor node.  The RF-to-DC converter or rectifier converts RF energy into DC energy, which is utilized by the sensor node. In the implementation of a CMOS-based RF-to-DC converter, the threshold voltage of MOS transistors mainly affects the conversion efficiency. Hence, for the first part of this research, different threshold voltage compensation schemes were developed for the rectifiers. These schemes were divided into two parts; first, the use of the MOSFET body terminal biasing technique and second, the use of an auxiliary circuit to obtain threshold voltage compensation. In addition to these schemes, the use of an alternate signaling scheme for voltage multiplier configuration of differential input RF-harvesters has also been investigated.  A known absolute value of voltage or current is the most useful for an integrated circuit. Thus, the circuit which generates the absolute value of voltage or current is cited as the voltage or current reference circuit respectively. Hence, in the second part of the research, simple, low power and moderately accurate, voltage and current reference circuits were developed for the power management unit of the sensor node. Besides voltage and current reference circuits, a frequency reference circuit was also designed. The use of the frequency reference circuit is in the digital processing and timing functions of the sensor node.  In the final part of the research, temperature sensing was selected as an application for the sensor node. Here, voltage and current based sensor cores were developed to sense the temperature. A smart temperature sensor was designed by using the voltage cores to obtain temperature information in terms of the duty-cycle. Similarly, the temperature equivalent current was converted into the frequency to obtain a temperature equivalent output signal.  All these implementations were done by using two integrated circuits which were fabricated during the year 2013-14.

Electrospun piezoelectric polymer 3D structures for wearable energy harvesters

Wearable devices have emerged as one of the most rapidly growing branches of the consumer electronics industry in recent years. Having a wide breadth of applications, ranging from leisure and fitness tracking to therapeutics and diagnostics, their development has become a critical driving force in the field of personalised medicine and point-of-care technologies. With the availability of more powerful processing techniques, efficient design approaches, and the miniaturisation of the basic building blocks that conform them, the capabilities of wearable devices have great potential for growth. Energy sources are one of the critical challenges associated with the design of wearable electronics. Renewable sources such as piezoelectric energy harvesters are of great interest, offering a viable alternative that can help tackle the problem of e-waste by enhancing the lifespan of a primary power source or as an independent power source. The piezoelectric active core materials of energy harvesters are the elements that allow for the conversion of mechanical energy to electrical energy. Contrary to the case of using piezoelectric ceramics, polymer based active cores offer superior flexibility, low manufacturing costs, and are non-toxic. However, their piezoelectric properties are comparatively lower than those of ceramics. Micro and nanofabrication methods for the manufacture of polymer based piezoelectric structures are of great interest in the field of energy harvesting because they allow for the tuning of specific morphological properties of these materials, offering the possibility of tailoring the material to the intended application and for the enhancement of the piezoelectric properties of the manufactured structures in some cases, which can bring the piezoelectric performance of polymer based materials closer to that of ceramics Electrospinning is a technique for the fabrication of nano and microfibrous structures based on the principles of electrohydrodynamics. This versatile manufacturing method not only allows for the fabrication of diverse morphologies of a material depending on the working parameters, ambient conditions and reagents, but can also intrinsically enhance the properties of the product. In this thesis, electrospinning will be used for the fabrication of polymer based piezoelectric materials. The work presented in the following chapters will focus firstly on the optimisation of the working parameters and on the composition of the polymer solutions for the fabrication of morphologically stable fibres and consequently will deal with improving the electrical response of these structures when they are used as the active core of a piezoelectric generator. Initial experimental work deals with the optimisation of polymer solutions containing the ferroelectric polymer poly(vinylidene fluoride) (PVDF). Favourable conditions for the fabrication of PVDF nanofibres were identified, and the resulting 2D fibrous mats were used for assembling a first iteration of piezoelectric generators. The findings indicated that the electrospun PVDF product had a favourable electrical response in spite of the morphology of the fibrous product not being ideal. Thus, improving the quality of the electrospun products would certainly allow for the fabrication of better performing generators. The use of chemical additives, solvent systems, and the combination of polymers for electrospinning can heavily influence the quality of the product. This thesis proceeds with the exploration of this premise, using combinations of PVDF with poly(ethylene oxide) (PEO) and lithium chloride (LiCl) for improving the quality of the material. Fibre morphology improved dramatically with the use of these additives, and it was observed that the fabricated fibrous structures could now transition to 3D materials under specific conditions, with variants ranging from a cloud-like structure to thick sponge-like fibrous mats. The conditions required for the production of 3D structures were found to be compatible with poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE), a copolymer known to have intrinsically superior piezoelectric properties than PVDF. The fabricated structures were used for assembling piezoelectric generators, and their electrical properties were shown to be comparable or to outperform similar state-of-the-art devices. Design opportunities were identified while working on the proposed piezoelectric generator architecture and the interfacing methods used for bonding the active core to the electrode materials. The thesis finalises with an exploration of additional methods that can be used to further increase the electrical response of generators with thick sponge-like fibrous PVDF-TrFE/PEO active cores. The findings of this final study revealed that electrode placement and design that conforms to the characteristics of the electrospun fibrous core and the use of electrode materials that can interface with both the surface of the active core and the fibrous network within the core material can improve the electrical output of the generators dramatically. The multidisciplinary work presented in this thesis explored fields ranging from chemistry and materials science to electronics and electrical engineering, laying the ground work upon which new research opportunities for the development of portable renewable energy sources can develop

Double smart energy harvesting system for self-powered industrial IoT

312 p. 335 p. (confidencial)Future factories would be based on the Industry 4.0 paradigm. IndustrialInternet of Things (IIoT) represent a part of the solution in this field. Asautonomous systems, powering challenges could be solved using energy harvestingtechnology. The present thesis work combines two alternatives of energy input andmanagement on a single architecture. A mini-reactor and an indoor photovoltaiccell as energy harvesters and a double power manager with AC/DC and DC/DCconverters controlled by a low power single controller. Furthermore, theaforementioned energy management is improved with artificial intelligencetechniques, which allows a smart and optimal energy management. Besides, theharvested energy is going to be stored in a low power supercapacitor. The workconcludes with the integration of these solutions making IIoT self-powered devices.IK4 Teknike