Minimization of NBTI performance degradation using internal node control

Abstract—Negative Bias Temperature Instability (NBTI) is a significant reliability concern for nanoscale CMOS circuits. Its effects on circuit timing can be especially pronounced for circuits with standby-mode equipped functional units because these units can be subjected to static NBTI stress for extended periods of time. This paper proposes internal node control, in which the inputs to individual gates are directly manipulated to prevent this static NBTI fatigue. We give a mixed integer linear program formulation for an optimal solution to this problem. The optimal placement of internal node control yields an average 26.7 % reduction in NBTI-induced delay over a ten year period for the ISCAS85 benchmarks. We find that the problem is NP-complete and present a linear-time heuristic that can be used to quickly find near-optimal solutions. The heuristic solutions are, on average, within 0.17 % of optimal and all were within 0.60% of optimal. I

Balancing soft error coverage with lifetime reliability in redundantly multithreaded processors

Silicon reliability is a key challenge facing the microprocessor industry. Processors need to be designed such that they are resilient against both soft errors and lifetime reliability phenomena. However, techniques developed to address one class of reliability problems may impact other aspects of silicon reliability. In this paper, we show that Redundant Multi-Threading (RMT), which provides soft error protection, exacerbates lifetime reliability. We then explore two different architectural approaches to tackle this problem, namely, Dynamic Voltage Scaling (DVS) and partial RMT. We show that each approach has certain strengths and weaknesses with respect to performance, soft error coverage, and lifetime reliability. We then propose and evaluate a hybrid approach that combines DVS and partial RMT. We show that this approach provides better improvement in lifetime reliability than DVS or partial RMT alone, buys back a significant amount of performance that is lost due to DVS, and provides nearly complete soft error coverage. I

Resilient Design for Process and Runtime Variations

The main objective of this thesis is to tackle the impact of parameter variations in order to improve the chip performance and extend its lifetime

PRITEXT: Processor Reliability Improvement Through Exercise Technique

With continuous improvements in CMOS technology, transistor sizes are shrinking aggressively every year. Unfortunately, such deep submicron process technologies are severely degraded by several wearout mechanisms which lead to prolonged operational stress and failure. Negative Bias Temperature Instability (NBTI) is a prominent failure mechanism which degrades the reliability of current semiconductor devices. Improving reliability of processors is necessary for ensuring long operational lifetime which obviates the necessity of mitigating the physical wearout mechanisms. NBTI severely degrades the performance of PMOS transistors in a circuit, when negatively biased, by increasing the threshold voltage leading to critical timing failures over operational lifetime. A lack of activity among the PMOS transistors for long duration leads to a steady increase in threshold voltage Vth. Interestingly, NBTI stress can be recovered by removing the negative bias using appropriate input vectors. Exercising the dormant critical components in the Processor has been proved to reduce the NBTI stress. We use a novel methodology to generate a minimal set of deterministic input vectors which we show to be effective in reducing the NBTI wearout in a superscalar processor core. We then propose and evaluate a new technique PRITEXT, which uses these input vectors in exercise mode to effectively reduce the NBTI stress and improve the operational lifetime of superscalar processors. PRITEXT, which uses Input Vector Control, leads to a 4.5x lifetime improvement of superscalar processor on average with a maximum lifetime improvement of 12.7x

A sensor-less NBTI mitigation methodology for NoC architectures

CMOS technology improvement allows to increase the number of cores integrated on a single chip and makes Network-on-Chips (NoCs) a key component from the performance and reliability standpoints. Unfortunately, continuous scaling of CMOS technology poses severe concerns regarding failure mechanisms such as NBTI and stressmigration, that are crucial in achieving acceptable component lifetime. Process variation complicates the scenario, decreasing device lifetime and performance predictability during chip fabrication. This paper presents a novel sensor-less methodology to reduce the NBTI degradation in the on-chip network virtual channel buffers, considering process variation effects as well. Experimental validation is obtained using a cycle accurate simulator considering both real and synthetic traffic patterns. We compare our methodology to the best sensor-wise approach used as reference golden model. The proposed sensor-less strategy achieves results within 25% to the optimal sensor-wise methodology while this gap is reduced around 10% decreasing the number of virtual channels per input port. Moreover, our proposal can mitigate NBTI impact both in short and long run, since we recover both the most degraded VC (short run) as well as all the other VCs (long term)

Aging-Aware Routing Algorithms for Network-on-Chips

Network-on-Chip (NoC) architectures have emerged as a better replacement of the traditional bus-based communication in the many-core era. However, continuous technology scaling has made aging mechanisms, such as Negative Bias Temperature Instability (NBTI) and electromigration, primary concerns in NoC design. In this work, a novel system-level aging model is proposed to model the effects of aging in NoCs, caused due to (a) asymmetric communication patterns between the network nodes, and (b) runtime traffic variations due to routing policies. This work observes a critical need of a holistic aging analysis, which when combined with power-performance optimization, poses a multi-objective design challenge. To solve this problem, two different aging-aware routing algorithms are proposed: (a) congestion-oblivious Mixed Integer Linear Programming (MILP)-based routing algorithm, and (b) congestion-aware adaptive routing algorithm and router micro-architecture. After extensive experimental evaluations, proposed routing algorithms reduce aging-induced power-performance overheads while also improving the system robustness

Exploiting heterogeneity in Chip-Multiprocessor Design

In the past decade, semiconductor manufacturers are persistent in building faster and smaller transistors in order to boost the processor performance as projected by Moore’s Law. Recently, as we enter the deep submicron regime, continuing the same processor development pace becomes an increasingly difficult issue due to constraints on power, temperature, and the scalability of transistors. To overcome these challenges, researchers propose several innovations at both architecture and device levels that are able to partially solve the problems. These diversities in processor architecture and manufacturing materials provide solutions to continuing Moore’s Law by effectively exploiting the heterogeneity, however, they also introduce a set of unprecedented challenges that have been rarely addressed in prior works. In this dissertation, we present a series of in-depth studies to comprehensively investigate the design and optimization of future multi-core and many-core platforms through exploiting heteroge-neities. First, we explore a large design space of heterogeneous chip multiprocessors by exploiting the architectural- and device-level heterogeneities, aiming to identify the optimal design patterns leading to attractive energy- and cost-efficiencies in the pre-silicon stage. After this high-level study, we pay specific attention to the architectural asymmetry, aiming at developing a heterogeneity-aware task scheduler to optimize the energy-efficiency on a given single-ISA heterogeneous multi-processor. An advanced statistical tool is employed to facilitate the algorithm development. In the third study, we shift our concentration to the device-level heterogeneity and propose to effectively leverage the advantages provided by different materials to solve the increasingly important reliability issue for future processors

Modeling DVFS and Power-Gating Actuators for Cycle-Accurate NoC-Based Simulators

Networks-on-chip (NoCs) are a widely recognized viable interconnection paradigm to support the multi-core revolution. One of the major design issues of multicore architectures is still the power, which can no longer be considered mainly due to the cores, since the NoC contribution to the overall energy budget is relevant. To face both static and dynamic power while balancing NoC performance, different actuators have been exploited in literature, mainly dynamic voltage frequency scaling (DVFS) and power gating. Typically, simulation-based tools are employed to explore the huge design space by adopting simplified models of the components. As a consequence, the majority of state-of-the-art on NoC power-performance optimization do not accurately consider timing and power overheads of actuators, or (even worse) do not consider them at all, with the risk of overestimating the benefits of the proposed methodologies. This article presents a simulation framework for power-performance analysis of multicore architectures with specific focus on the NoC. It integrates accurate power gating and DVFS models encompassing also their timing and power overheads. The value added of our proposal is manyfold: (i) DVFS and power gating actuators are modeled starting from SPICE-level simulations; (ii) such models have been integrated in the simulation environment; (iii) policy analysis support is plugged into the framework to enable assessment of different policies; (iv) a flexible GALS (globally asynchronous locally synchronous) support is provided, covering both handshake and FIFO re-synchronization schemas. To demonstrate both the flexibility and extensibility of our proposal, two simple policies exploiting the modeled actuators are discussed in the article

Particle Swarm Optimization Algorithm for Leakage Power Reduction in VLSI Circuits

 Leakage power is the dominant source of power dissipation innanometer technology. As per the International Technology Roadmap forSemiconductors (ITRS) static power dominates dynamic power with theadvancement in technology. One of the well-known techniques used forleakage reduction is Input Vector Control (IVC). Due to stacking effect inIVC, it gives less leakage for the Minimum Leakage Vector (MLV) appliedat inputs of test circuit. This paper introduces Particle Swarm Optimization(PSO) algorithm to the field of VLSI to find minimum leakage vector.Another optimization algorithm called Genetic algorithm (GA) is alsoimplemented to search MLV and compared with PSO in terms of number ofiterations. The proposed approach is validated by simulating few testcircuits. Both GA and PSO algorithms are implemented in Verilog HDLand the simulations are carried out using Xilinx 9.2i. From the simulationresults it is found that PSO based approach is best in finding MLVcompared to Genetic based implementation as PSO technique uses lessruntime compared to GA. To the best of the author’s knowledge PSOalgorithm is used in IVC technique to optimize power for the first time andit is quite successful in searching MLV

On variability and reliability of poly-Si thin-film transistors

In contrast to conventional bulk-silicon technology, polysilicon (poly-Si) thin-film transistors (TFTs) can be implanted in flexible substrate and can have low process temperature. These attributes make poly-Si TFT technology more attractive for new applications, such as flexible displays, biosensors, and smart clothing. However, due to the random nature of grain boundaries (GBs) in poly-Si film and self-heating enhanced negative bias temperature instability (NBTI), the variability and reliability of poly-Si TFTs are the main obstacles that impede the application of poly-Si TFTs in high-performance circuits. The primary focus of this dissertation is to develop new design methodologies and modeling techniques for facilitating new applications of poly-Si TFT technology. In order to do that, a physical model is first presented to characterize the GB-induced transistor threshold voltage (V th)variations considering not only the number but also the position and orientation of each GB in 3-D space. The fast computation time of the proposed model makes it suitable for evaluation of GB-induced transistor Vthvariation in the early design phase. Furthermore, a self-consistent electro-thermal model that considers the effects of device geometry, substrate material, and stress conditions on NBTI is proposed. With the proposed modeling methodology, the significant impacts of device geometry, substrate, and supply voltage on NBTI in poly-Si TFTs are shown. From a circuit design perspective, a voltage programming pixel circuit is developed for active-matrix organic light emitting diode (AMOLED) displays for compensating the shift of Vth and mobility in driver TFTs as well as compensating the supply voltage degradation. In addition, a self-repair design methodology is proposed to compensate the GB-induced variations for liquid crystal displays (LCDs) and AMOLED displays. Based on the simulation results, the proposed circuit can decrease the required supply voltage by 20% without performance and yield degradation. In the final section of this dissertation, an optimization methodology for circuit-level reliability tests is explored. To effectively predict circuit lifetime, accelerated aging (i.e. elevated voltage and temperature) is commonly applied in circuit-level reliability tests, such as constant voltage stress (CVS) and ramp voltage stress (RVS) tests. However, due to the accelerated aging, shifting of dominant degradation mechanism might occur leading to the wrong lifetime prediction. To get around this issue, we proposed a technique to determine the proper stress range for accelerated aging tests