70,035 research outputs found

    Two- and Three-dimensional High Performance, Patterned Overlay Multi-chip Module Technology

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    A two- and three-dimensional multi-chip module technology was developed in response to the continuum in demand for increased performance in electronic systems, as well as the desire to reduce the size, weight, and power of space systems. Though developed to satisfy the needs of military programs, such as the Strategic Defense Initiative Organization, the technology, referred to as High Density Interconnect, can also be advantageously exploited for a wide variety of commercial applications, ranging from computer workstations to instrumentation and microwave telecommunications. The robustness of the technology, as well as its high performance, make this generality in application possible. More encouraging is the possibility of this technology for achieving low cost through high volume usage

    Characterization and Verification Environment for the RD53A Pixel Readout Chip in 65 nm CMOS

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    The RD53 collaboration is currently designing a large scale prototype pixel readout chip in 65 nm CMOS technology for the phase 2 upgrades at the HL-LHC. The RD53A chip will be available by the end of the year 2017 and will be extensively tested to confirm if the circuit and the architecture make a solid foundation for the final pixel readout chips for the experiments at the HL-LHC. A test and data acquisition system for the RD53A chip is currently under development to perform single-chip and multi-chip module measurements. In addition, the verification of the RD53A design is performed in a dedicated simulation environment. The concept and the implementation of the test and data acquisition system and the simulation environment, which are based on a modular data acquisition and system testing framework, are presented in this work

    ATLASPIX3 Modules for Experiments at Electron-Positron Colliders

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    High-voltage CMOS detectors are being developed for application in High-Energy Physics. ATLASPIX3 is a full-reticle size monolithic pixel detector, consisting of 49000 pixels of dimension 50ร—150 ฮผm2^2. It has been realized in in TSI 180 nm HVCMOS technology. In view of applications at future electron-positron colliders, multi-chip-modules are built. The module design and its characterization by electrical test and radiation sources will be illustrated, including characterization of shunt regulators for serial chain powering. Lightweight long structure to support and to cool multiple-module chain are also being realized. The multi-chip-modules performance shows no degradation with respect to single-chip devices and the level of integration achieved is suitable for tracking at future e+e- accelerators

    3-D MCM Technology for Miniaturisation of an Electronic System

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    Miniaturisation of a bulky system requires effective use and integration of modern packagingtechnology to achieve smaller size and lighter weight while consuming low power and achievinghigh speed. Using three-dimensional packaging technology, a system can be miniaturised to asmall package popularly known as system-in-a-package (SIP). Various layers of componentintegration (die or packaged) in the horizontal and vertical directions lead to a compact systemin a single package. In this paper, the development of an analog multi-chip module (MCM) isillustrated using 3-D technology. The major goals achieved using this technology are the mixedsignalintegration, arealsize reduction, and low power. A comparison is made with the systemon-a-chip (SOC) technology and their merits and demerits are also discussed

    Paper Session III-C - Technology Transfer of Military Space Microprocessor Development

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    Over the past 11 years Phillips Laboratory has led the development of microprocessors and computers for USAF space and strategic missile applications. As a result of their programs, advanced computer technology is available for use by civil and commercial space customers as well. The Generic VHSIC Spaceborne Computer (GVSC) program began in 1985 at the USAF Phillips Laboratory to fulfill a deficiency in the availability of space-qualified data and control processors. GVSC developed a radiation hardened multi-chip version of the 16-bit, Mil-Std 1750A microprocessor. The follow-on program to the GVSC, the Advanced Spaceborne Computer Module (ASCM) program, was initiated by Phillips Laboratory to establish two industrial sources for complete, radiation-hardened 16-bit and 32-bit computers and microelectronic components. Development of the Control Processor Module (CPM), the first of two contract phases, completed in 1994 with the availability of two sources for space-qualified, 16-bit Mil-Std- 1750A computers, cards, multi-chip modules, and integrated circuits. The second phase of the program, the Advanced Technology Insertion Module (ATIM), is currently scheduled to complete at the end of 1997. ATIM is developing two single board computers based on 32-bit reduced instruction set computer (RISC) processors. GVSC, CPM, and ATIM technologies are flying or baselined in the majority of todayโ€™s DoD, NASA, and commercial satellite systems

    Study on the Terahertz Nondestructive Testing Method for Multi-chip Package Inspection using a Resonant Slit-type Probe with Rounded Matching Structure

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    This paper presents a terahertz (THz) non-destructive testing (NDT) method for multi-chip package (MCP) inspection. A resonant slit-type probe was used to obtain high resolution while using a source in the low Th frequency region for the Th inspection. However, the conventional resonant slit structure is difficult to manufacture due to the thin thickness of the slit, as well as the problem of increasing the change of the resonance frequency and the loss of reflection due to the thickness error of the slit. A resonant slit-type probe with a rounded matching structure was proposed to improve the coupling efficiency while improving the slit thickness problem in the Th region. The proposed probe can reduce the resonance frequency change according to the thickness error while maintaining the high coupling efficiency despite the increase of the slit thickness. It is possible to reduce the FWHM by more than 40% by using the proposed structure than the conventional resonant slit structure in the foreign object detection simulation using the slit probe. A probe with a resonant frequency of 205 GHz using the proposed structure was fabricated by electroforming and compared with VNA measurement results and CST MWS simulation results. From the measurement results, it was confirmed that the proposed probe has a simple structure and high coupling efficiency. Using the pulsed THz system, the transmission characteristics of the semiconductor chip according to the polarization direction were verified, and it was confirmed that the semiconductor inspection using the THz wave was possible. A continuous (CW) THz inspection system that can be applied to process inspection has been established. A THz transceiver module based on directional coupler and a THz transceiver module based on Magic-tee have been constructed. In addition, FPGA-based high-speed lock amplifiers have been built to improve detection rates for process inspections. Standard samples were used to verify the performance of the measurement system and probes. It was confirmed that the magic-based THz transceiver module is more suitable for defect detection. The probe structure fabricated using the proposed structure was able to detect defects of 100 ยตm, and the high - speed signal detection module was able to detect defects stably even at a sample moving speed of 1000 mm/s. In the semiconductor chip inspection, a lateral inspection method has been proposed because the conductivity of the semiconductor surface is high. The CST Microwave Studio simulation confirmed that side inspection enabled void detection. A lateral inspection system was constructed and a void of 500 ใŽ› in diameter in the multi-chip package was detected. In addition, a simple contrast-transformed image filter is applied to the detected image so that defects in the laminated structure can be easily discriminated. As a result, it is confirmed that THz wave system using the proposed probe is a new inspection tool for detecting voids of multi-chip package.|๋ณธ ๋…ผ๋ฌธ์—์„œ๋Š” ๋‹ค์ค‘ ์นฉ ํŒจํ‚ค์ง€ ๊ฒ€์‚ฌ๋ฅผ ์œ„ํ•œ ํ…Œ๋ผํ—ค๋ฅด์ธ  ๋น„ํŒŒ๊ดด ๊ฒ€์‚ฌ ๋ฐฉ๋ฒ•์„ ์ œ์‹œํ•˜์˜€๋‹ค. ํ…Œ๋ผํ—ค๋ฅด์ธ ํŒŒ ๊ฒ€์‚ฌ๋ฅผ ์œ„ํ•ด ์ €์ฃผํŒŒ ์˜์—ญ์˜ ํ…Œ๋ผํ—ค๋ฅด์ธ  ๊ด‘์›์„ ์‚ฌ์šฉํ•˜๋ฉด์„œ๋„ ๊ณ ํ•ด์ƒ๋„์˜ ๋ถ„ํ•ด๋Šฅ์„ ์–ป๊ธฐ ์œ„ํ•œ ๋ฐฉ๋ฒ•์œผ๋กœ ๊ณต์ง„ํ˜• ์Šฌ๋ฆฟ ํ”„๋กœ๋ธŒ๋ฅผ ์ ์šฉํ•˜์˜€๋‹ค. ๊ทธ๋Ÿฌ๋‚˜ ์ข…๋ž˜์˜ ๊ณต์ง„ํ˜• ์Šฌ๋ฆฟ ๊ตฌ์กฐ๋Š” ์Šฌ๋ฆฟ ๋‘๊ป˜๊ฐ€ ์–‡์•„ ์ œ์ž‘์ด ์–ด๋ ค์šธ ๋ฟ๋งŒ ์•„๋‹ˆ๋ผ ์Šฌ๋ฆฟ ๋‘๊ป˜ ์˜ค์ฐจ์— ๋”ฐ๋ฅธ ๊ณต์ง„์ฃผํŒŒ์ˆ˜ ๋ณ€ํ™” ๋ฐ ๋ฐ˜์‚ฌ์†์‹ค(Return loss)์ด ์ฆ๊ฐ€ํ•˜๋Š” ๋ฌธ์ œ๊ฐ€ ๋ฐœ์ƒํ•œ๋‹ค. ํ…Œ๋ผํ—ค๋ฅด์ธ ํŒŒ ์˜์—ญ์—์„œ์˜ ์Šฌ๋ฆฟ ๋‘๊ป˜ ๋ฌธ์ œ๋ฅผ ๊ฐœ์„ ํ•˜๋ฉด์„œ๋„ ๊ฒฐํ•ฉ ํšจ์œจ์„ ๋†’์ด๊ธฐ ์œ„ํ•œ ๋ฐฉ๋ฒ•์œผ๋กœ ๋‘ฅ๊ทผ ์ •ํ•ฉ ๊ตฌ์กฐ๋ฅผ ๊ฐ€์ง„ ๊ณต์ง„ํ˜• ์Šฌ๋ฆฟ ํ”„๋กœ๋ธŒ๋ฅผ ์ œ์•ˆํ•˜์˜€๋‹ค. ์ œ์•ˆ ๋œ ํ”„๋กœ๋ธŒ๋Š” ์Šฌ๋ฆฟ ๋‘๊ป˜์˜ ์ฆ๊ฐ€์—๋„ ๋ถˆ๊ตฌํ•˜๊ณ  ๋†’์€ ๊ฒฐํ•ฉ ํšจ์œจ์„ ์œ ์ง€ํ•จ๊ณผ ๋™์‹œ์— ๋‘๊ป˜ ์˜ค์ฐจ์— ๋”ฐ๋ฅธ ๊ณต์ง„์ฃผํŒŒ์ˆ˜ ๋ณ€ํ™”๋ฅผ ๊ฐ์†Œ์‹œํ‚ฌ ์ˆ˜ ์žˆ๋‹ค. ๋˜ํ•œ, ์Šฌ๋ฆฟ ํ”„๋กœ๋ธŒ๋ฅผ ์ด์šฉํ•œ ์ด๋ฌผ ๊ฒ€์ถœ ์‹œ๋ฎฌ๋ ˆ์ด์…˜์—์„œ ๊ธฐ์กด์˜ ๊ณต์ง„ํ˜• ์Šฌ๋ฆฟ ๊ตฌ์กฐ๋ณด๋‹ค ์ œ์•ˆ๋œ ๊ตฌ์กฐ๋ฅผ ์ด์šฉํ•จ์œผ๋กœ์จ ๋ฐ˜์น˜ํญ (FWHM)์„ 40% ์ด์ƒ ๊ฐ์†Œ์‹œํ‚ฌ ์ˆ˜ ์žˆ์—ˆ๋‹ค. ์ œ์•ˆ๋œ ๊ตฌ์กฐ๋ฅผ ์ ์šฉํ•œ ๊ณต์ง„ ์ฃผํŒŒ์ˆ˜๊ฐ€ 205 GHz์ธ ํ”„๋กœ๋ธŒ๋ฅผ ์ „๊ธฐ๋„๊ธˆ ๋ฐฉ์‹์œผ๋กœ ์ œ์ž‘ํ•˜์˜€์œผ๋ฉฐ, VNA ์ธก์ • ๊ฒฐ๊ณผ์™€ CST MWS ์‹œ๋ฎฌ๋ ˆ์ด์…˜ ๊ฒฐ๊ณผ์™€ ๋น„๊ตํ•˜์˜€๋‹ค. ์ธก์ • ๊ฒฐ๊ณผ๋กœ๋ถ€ํ„ฐ ์ œ์•ˆ ๋œ ํ”„๋กœ๋ธŒ๊ฐ€ ๊ตฌ์กฐ์ ์œผ๋กœ ๊ฐ„๋‹จํ•˜๋ฉด์„œ๋„ ๋†’์€ ๊ฒฐํ•ฉ ํšจ์œจ์„ ๊ฐ€์ง์„ ํ™•์ธํ•˜์˜€๋‹ค. ํŽ„์Šคํ˜• ํ…Œ๋ผํ—ค๋ฅด์ธ ํŒŒ ์‹œ์Šคํ…œ์„ ๊ตฌ์„ฑ, ๋ฐ˜๋„์ฒด ์นฉ์˜ ํŽธ๊ด‘ ๋ฐฉํ–ฅ์— ๋”ฐ๋ฅธ ํˆฌ๊ณผ ํŠน์„ฑ์„ ๊ฒ€์ฆํ•˜์—ฌ ํ…Œ๋ผํ—ค๋ฅด์ธ ํŒŒ๋ฅผ ์ด์šฉํ•œ ๋ฐ˜๋„์ฒด ๊ฒ€์‚ฌ๊ฐ€ ๊ฐ€๋Šฅํ•จ์„ ํ™•์ธํ•˜์˜€๋‹ค. ๊ณต์ • ๊ฒ€์‚ฌ ์ ์šฉ์ด ๊ฐ€๋Šฅํ•œ ์—ฐ์†ํ˜• ํ…Œ๋ผํ—ค๋ฅด์ธ ํŒŒ ๊ฒ€์‚ฌ ์‹œ์Šคํ…œ์„ ๊ตฌ์ถ•ํ•˜์˜€๋‹ค. ๋ฐฉํ–ฅ์„ฑ ์ปคํ”Œ๋Ÿฌ (Directional coupler) ๊ธฐ๋ฐ˜์˜ ํ…Œ๋ผํ—ค๋ฅด์ธ ํŒŒ ์†ก์ˆ˜์‹ ๊ธฐ ๋ชจ๋“ˆ๊ณผ ๋งค์ง ํ‹ฐ (Magic-tee) ๊ธฐ๋ฐ˜์˜ ํ…Œ๋ผํ—ค๋ฅด์ธ ํŒŒ ์†ก์ˆ˜์‹ ๊ธฐ ๋ชจ๋“ˆ์„ ๊ตฌ์„ฑํ•˜์˜€๋‹ค. ๋˜ํ•œ, ๊ณต์ • ๊ฒ€์‚ฌ๋ฅผ ์œ„ํ•œ ๊ฒ€์ถœ ์†๋„๋ฅผ ๊ฐœ์„ ํ•˜๊ธฐ ์œ„ํ•ด FPGA ๊ธฐ๋ฐ˜์˜ ๊ณ ์† ๋ฝ์ธ์•ฐํ”„ (lock-in amplifier)๊ฐ€ ์ œ์ž‘๋˜์—ˆ์œผ๋ฉฐ ๋ฐ˜๋„์ฒด ํ‘œ๋ฉด์˜ ๋„์ „์„ฑ์„ ๊ณ ๋ คํ•œ ํ‘œ์ค€ ์ƒ˜ํ”Œ์„ ์ œ์ž‘ํ•˜์—ฌ ์ธก์ • ์‹œ์Šคํ…œ๊ณผ ํ”„๋กœ๋ธŒ์˜ ์„ฑ๋Šฅ ๊ฒ€์ฆ์„ ์œ„ํ•ด ์‚ฌ์šฉ๋˜์—ˆ์Šต๋‹ˆ๋‹ค. ๋งค์ง ํ‹ฐ ๊ธฐ๋ฐ˜์˜ ํ…Œ๋ผํ—ค๋ฅด์ธ ํŒŒ ํŠธ๋žœ์‹œ๋ฒ„ ๋ชจ๋“ˆ์ด ๊ฒฐํ•จ ๊ฒ€์ถœ์— ๋” ์ ํ•ฉํ•จ์„ ํ™•์ธํ•˜์˜€์œผ๋ฉฐ, ์‹œ์Šคํ…œ์„ ์ด์šฉํ•œ ํ”„๋กœ๋ธŒ์˜ ๊ณต๊ฐ„ ๋ถ„ํ•ด๋Šฅ ๊ฒ€์ฆ ๊ฒฐ๊ณผ 100 ยตm์˜ ๊ณต๊ฐ„ ํ•ด์ƒ๋„์„ ๊ฐ€์กŒ๋‹ค. ๋˜ํ•œ, ๊ณ ์† ์‹ ํ˜ธ ์ฒ˜๋ฆฌ ๋ชจ๋“ˆ์„ ์ด์šฉํ•˜์—ฌ 1000mm/s์˜ ๊ณ ์† ์ด๋™ ์ค‘์—๋„ ์•ˆ์ •์ ์œผ๋กœ ์˜์ƒ ๊ฒ€์ถœ์ด ๊ฐ€๋Šฅํ•จ์„ ํ™•์ธํ•˜์˜€๋‹ค. ๋ฐ˜๋„์ฒด ์นฉ์„ ์ด์šฉํ•œ ๊ฒ€์‚ฌ์—์„œ๋Š” ๋ฐ˜๋„์ฒด ํ‘œ๋ฉด์˜ ๋†’์€ ๋„์ „์„ฑ์œผ๋กœ ๋ฐ˜์‚ฌํ˜• ํ…Œ๋ผํ—ค๋ฅด์ธ ํŒŒ ์‹œ์Šคํ…œ์œผ๋กœ๋Š” Void ๊ฒ€์ถœ์ด ์–ด๋ ค์›Œ ์ธก ๋ฐฉํ–ฅ(lateral) ๊ฒ€์‚ฌ ๋ฐฉ์‹์„ ์ œ์•ˆํ•˜์˜€๋‹ค. CST Microwave Studio ์‹œ๋ฎฌ๋ ˆ์ด์…˜์„ ํ†ตํ•˜์—ฌ ์ธก ๋ฐฉํ–ฅ ๊ฒ€์‚ฌ๋กœ ๋ณด์ด๋“œ (Void) ๊ฒ€์ถœ์ด ๊ฐ€๋Šฅํ•จ์„ ํ™•์ธํ•˜์˜€๋‹ค. ์ธก ๋ฐฉํ–ฅ ๊ฒ€์‚ฌ ์‹œ์Šคํ…œ์„ ๊ตฌ์„ฑํ•˜์˜€์œผ๋ฉฐ ์ ์ธต ๋ฐ˜๋„์ฒด ๋‚ด์˜ ์ง๊ฒฝ 500 ใŽ›์˜ ๋ณด์ด๋“œ๋ฅผ ๊ฒ€์ถœํ•˜์˜€๋‹ค. ๋˜ํ•œ, ๊ฒ€์ถœ ์˜์ƒ์— ๊ฐ„๋‹จํ•œ ์ฝ˜ํŠธ๋ผ์ŠคํŠธ ์ŠคํŠธ๋ ˆ์นญ ๋ณ€ํ™˜ ์˜์ƒ ํ•„ํ„ฐ๋ฅผ ์ ์šฉํ•˜์—ฌ ํ”„๋กœ๋ธŒ ๊ตฌ์กฐ์— ๋”ฐ๋ฅธ ๊ฒ€์ถœ ์‹ ํ˜ธ๋ฅผ ๊ฐœ์„ ํ•จ์œผ๋กœ์จ ์ ์ธต ๊ตฌ์กฐ ๋‚ด์˜ ๊ฒฐํ•จ์„ ์‰ฝ๊ฒŒ ํŒ๋ณ„์ด ๊ฐ€๋Šฅํ•˜๋„๋ก ํ•˜์˜€๋‹ค. ๊ฒฐ๊ณผ์ ์œผ๋กœ ์ œ์•ˆ๋œ ํ”„๋กœ๋ธŒ๋ฅผ ์ ์šฉํ•œ ํ…Œ๋ผํ—ค๋ฅด์ธ ํŒŒ ์‹œ์Šคํ…œ์ด ์ ์ธต ๋ฐ˜๋„์ฒด ๋‚ด์˜ Void ๊ฒ€์ถœ์„ ์œ„ํ•œ ์ƒˆ๋กœ์šด ๊ฒ€์‚ฌ ๋ฐฉ๋ฒ•์ž„์„ ํ™•์ธํ•˜์˜€๋‹ค.1. Introduction 1 1.1 Motivation 1 1.2 Outline 3 2. Background 5 2.1 Multi-chip package inspection technology and their Limit 5 2.1.1 Multi-chip package inspection using ultrasound 5 2.1.2 Multi-chip package inspection using infra-Red (IR) 6 2.1.3 Multi-chip package inspection using X-ray 8 2.2 THz inspection technology 9 2.2.1 Advantages of THz inspection technology 9 2.2.2 Issues in the THz inspection technology 12 2.2.3 THz technology for multi-chip package inspection 16 3. Resonant slit-type probe 19 3.1 Design of a resonant slit-type probe 19 3.1.1 Advantages of resonant slit-type probe 19 3.1.2 Theory of resonant slit-type probe 20 3.1.3 Resonant slit-type probe for THz wave 23 3.1.4 Matching structure of resonant slit-type probe 27 3.2 Resonant slit-type probe with rounded matching structure 27 3.2.1 Resonant slit-type probe with rounded matching structure 27 3.2.2 Fabrication of slit-type probe with rounded matching structure 34 3.2.3 Measurement of slit-type probe with rounded matching structure 37 4. Experimental setup 39 4.1 Components for CW THz imaging system 40 4.1.1 CW THz source 40 4.1.2 CW THz detector 41 4.1.3 FPGA based on fast lock-in amplifier 41 4.1.4 Fabrication of standard sample 48 4.2 CW THz Transceiver module for multi-chip package inspection 51 4.2.1 Design of THz transceiver module 51 4.2.2 Magic-tee based THz transceiver 56 4.2.3 Directional coupler based THz transceiver 56 5. Measurements and results 59 5.1 Verification of performance of THz imaging system 59 5.1.1 Measurement of spatial resolution of resonant slit-type probe with rounded matching structure 59 5.1.2 High-speed signal processing and image acquisition 60 5.2 Semiconductor chip inspection using pulsed THz wave 65 5.2.1 Inspection system using pulsed THz wave 65 5.2.2 Semiconductor chip inspection using pulsed THz wave 67 5.2.3 Transmission characteristics according to the polarization 72 5.3 Semiconductor chip inspection using CW THz wave 73 5.3.1 Semiconductor chip inspection using CW THz system based on directional Coupler 77 5.3.2 Semiconductor chip inspection using CW THz system based on magic-tee 80 5.3.3 Semiconductor chip inspection using CW THz wave 83 5.4 Multi-chip package inspection using CW THz wave 83 5.4.1 THz propagation in voids of multi-chip package in lateral inspection 83 5.4.2 Multi-chip package inspection using lateral inspection methode 85 5.4.3 Improvement of void image using image processing technique 89 5.4.4 Another application using slit-type probe (Food inspection) 93 6. Conclusion 99 Reference 103Docto

    Waveguide-based antenna arrays in multi-chip module technology

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    For mm-waves, two types of low-loss waveguide are analysed, designed and measured. One is the hollow substrate integrated waveguide (HSIW) in which the inner dielectric of a traditional substrate integrated waveguide (SIW) is removed to resemble the propagation characteristics of a standard rectangular waveguide (RWG). The measured attenuation of a WR28-like HSIW is 2 Np/m or 17 dB/m throughout the Ka band. The second is the dielectric insular image guide (DIIG) in which an insular layer is added between the dielectric and the metallic ground to further reduce the conductor loss. The measured attenuation of a Ka band DIIG is 26 dB/m at 35 GHz. Based on the two waveguides, two high-gain antenna arrays operating in the Ka band are designed and measured. One is a 6 x 6 slot antenna array, centrefed by the HSIW. The Taylor-distribution technique is applied in two orthogonal directions to suppress the sidelobe level. The measured gain of this antenna array is 17.1 dBi at the centre frequency of 35.5 GHz. The other is a double-sided 10- element dielectric insular resonator antenna (DIRA) array, end-fed by the DIIG. The Taylor-distribution technique is also applied here to achieve a gain of 15.8 dBi at the centre frequency of 36 GHz. The great potential of these high-performance antennas is that they can be integrated with other microwave components (filters, power amplifiers, etc.) to form a complete front-end or transceiver in multi-chip module (MCM) technology

    Co-Package Technology Platform for Low-Power and Low-Cost Data Centers

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    We report recent advances in photonicโ€“electronic integration developed in the European research project L3MATRIX. The aim of the project was to demonstrate the basic building blocks of a co-packaged optical system. Two-dimensional silicon photonics arrays with 64 modulators were fabricated. Novel modulation schemes based on slow light modulation were developed to assist in achieving an efficient performance of the module. Integration of DFB laser sources within each cell in the matrix was demonstrated as well using wafer bonding between the InP and SOI wafers. Improved semiconductor quantum dot MBE growth, characterization and gain stack designs were developed. Packaging of these 2D photonic arrays in a chiplet configuration was demonstrated using a vertical integration approach in which the optical interconnect matrix was flip-chip assembled on top of a CMOS mimic chip with 2D vertical fiber coupling. The optical chiplet was further assembled on a substrate to facilitate integration with the multi-chip module of the co-packaged system with a switch surrounded by several such optical chiplets. We summarize the features of the L3MATRIX co-package technology platform and its holistic toolbox of technologies to address the next generation of computing challenges

    Minimalistic SDHC-SPI hardware reader module for boot loader applications

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    This paper introduces a low-footprint full hardware boot loading solution for FPGA-based Programmable Systems on Chip. The proposed module allows loading the system code and data from a standard SD card without having to re-program the whole embedded system. The hardware boot loader is processor independent and removes the need of a software boot loader and the related memory resources. The hardware overhead introduced is manageable, even in low-range FPGA chips, and negligible in mid- and high-range devices. The implementation of the SD card reader module is explained in detail and an example of a multi-boot loader is offered as well. The multi-boot loader is implemented and tested with the Xilinx's Picoblaze microcontroller

    A Manufacturer Design Kit for Multi-Chip Power Module Layout Synthesis

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    The development of Multi-Chip Power Modules (MCPMs) has been a key factor in recent advancements in power electronics technologies. MCPMs achieve higher power density by combining multiple power semiconductor devices into one package. The work detailed in this thesis is part of an ongoing project to develop a computer-aided design software tool known as PowerSynth for MCPM layout synthesis and optimization. This thesis focuses on the definition and design of a Manufacturer Design Kit (MDK) for PowerSynth, which enables the designer to design an MCPM for a manufacturerโ€™s fabrication process. The MDK is comprised of a layer stack and technology library, design rule checking (DRC), and layout versus schematic checking. File formats have been defined for layer stack and design rule input, and import functions have been written and integrated with the existing user interface and data structures to allow PowerSynth to accept these file formats as a form of input. Finally, an exhaustive DRC function has been implemented to allow the designer to verify that a synthesized layout meets all design rules before committing the design to manufacturing. This function was validated by running DRC on an example layout solution using two different sets of design rules
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