1 V CMOS subthreshold log domain PDM

A new CMOS circuit strategy for very low-voltage Pulse-Duration Modulators (PDM) is proposed. Optimization of voltage supply scaling below the sum of threshold voltages is based on Instantaneous Log Companding processing through the MOSFET operating in weak inversion. A 1 V VLSI PDM circuit for very low-voltage audio applications such as Hearing Aids is presented, showing good agreement between simulated and experimental data.Comisión Interministerial de Ciencia y Tecnología TIC97-1159, TIC99-1084European Union 2306

On the design and characterization of femtoampere current-mode circuits

In this paper, we show and validate a reliable circuit design technique based on source voltage shifting for current-mode signal processing down to femtoamperes. The technique involves specific-current extractors and logarithmic current splitters for obtaining on-chip subpicoampere currents. It also uses a special on-chip sawtooth oscillator to monitor and measure currents down to a few femtoamperes. This way, subpicoampere currents are characterized without driving them off chip and requiring expensive instrumentation with complicated low leakage setups. A special current mirror is also introduced for reliably replicating such low currents. As an example, a simple log-domain first-order low-pass filter is Implemented that uses a 100-fF capacitor and a 3.5-fA bias current to achieve a cutoff frequency of 0.5 Hz. A technique for characterizing noise at these currents is also described and verified. Finally, transistor mismatch measurements are provided and discussed. Experimental measurements are shown throughout the paper, obtained from prototypes fabricated in the AMS 0.35-μm three-metal two-poly standard CMOS process.Ministerio de Ciencia y Tecnología TIC-1999-0446-C02-02, FIT-070000-2001-0859, TIC-2000-0406-P4-05, TIC-2002-10878-EEuropean Union IST-2001-3412

A silicon implementation of the fly's optomotor control system

Flies are capable of stabilizing their body during free flight by using visual motion information to estimate self-rotation. We have built a hardware model of this optomotor control system in a standard CMOS VLSI process. The result is a small, low-power chip that receives input directly from the real world through on-board photoreceptors and generates motor commands in real time. The chip was tested under closed-loop conditions typically used for insect studies. The silicon system exhibited stable control sufficiently analogous to the biological system to allow for quantitative comparisons

Low-voltage CMOS log-companding techniques for audio applications

This paper presents a collection of novel current-mode circuit techniques for the integration of very low-voltage (down to 1 V) low-power (few hundreds of μA) complete SoCs in CMOS technologies. The new design proposal is based on both, the Log Companding theory and the MOSFET operating in subthreshold. Several basic building blocks for audio amplification, AGC and arbitrary filtering are given. The feasibility of the proposed CMOS circuits is illustrated through experimental data for different design case studies in 1.2 and 0.35 μm VLSI technologies.Comisión Interministerial de Ciencia y Tecnología TIC97-1159, TIC99- 1084European Union ESPRIT-FUSE-2306

Log-domain implementation of complex dynamics reaction-diffusion neural networks

In this paper, we have identified a second-order reaction-diffusion differential equation able to reproduce through parameter setting different complex spatio-temporal behaviors. We have designed a log-domain hardware that implements the spatially discretized version of the selected reaction-diffusion equation. The logarithmic compression of the state variables allows several decades of variation of these state variables within subthreshold operation of the MOS transistors. Furthermore, as all the equation parameters are implemented as currents, they can be adjusted several decades. As a demonstrator, we have designed a chip containing a linear array of ten second-order dynamics coupled cells. Using this hardware, we have experimentally reproduced two complex spatio-temporal phenomena: the propagation of travelling waves and of trigger waves, as well as isolated oscillatory cells.Gobierno de España TIC1999-0446-C02-02Office of Naval Research (USA

Low Power Adaptive Circuits: An Adaptive Log Domain Filter and A Low Power Temperature Insensitive Oscillator Applied in Smart Dust Radio

This dissertation focuses on exploring two low power adaptive circuits. One is an adaptive filter at audio frequency for system identification. The other is a temperature insensitive oscillator for low power radio frequency communication. The adaptive filter is presented with integrated learning rules for model reference estimation. The system is a first order low pass filter with two parameters: gain and cut-off frequency. It is implemented using multiple input floating gate transistors to realize online learning of system parameters. Adaptive dynamical system theory is used to derive robust control laws in a system identification task. Simulation results show that convergence is slower using simplified control laws but still occurs within milliseconds. Experimental results confirm that the estimated gain and cut-off frequency track the corresponding parameters of the reference filter. During operation, deterministic errors are introduced by mismatch within the analog circuit implementation. An analysis is presented which attributes the errors to current mirror mismatch. The harmonic distortion of the filter operating in different inversion is analyzed using EKV model numerically. The temperature insensitive oscillator is designed for a low power wireless network. The system is based on a current starved ring oscillator implemented using CMOS transistors instead of LC tank for less chip area and power consumption. The frequency variance with temperature is compensated by the temperature adaptive circuits. Experimental results show that the frequency stability from 5°C to 65°C has been improved 10 times with automatic compensation and at least 1 order less power is consumed than published competitors. This oscillator is applied in a 2.2GHz OOK transmitter and a 2.2GHz phase locked loop based FM receiver. With the increasing needs of compact antenna, possible high data rate and wide unused frequency range of short distance communication, a higher frequency phase locked loop used for BFSK receiver is explored using an LC oscillator for its capability at 20GHz. The success of frequency demodulation is demonstrated in the simulation results that the PLL can lock in 0.5μs with 35MHz lock-in range and 2MHz detection resolution. The model of a phase locked loop used for BFSK receiver is analyzed using Matlab

DTMOS-Based 0.4V Ultra Low-Voltage Low-Power VDTA Design and Its Application to EEG Data Processing

In this paper, an ultra low-voltage, ultra low-power voltage differencing transconductance amplifier (VDTA) is proposed. DTMOS (Dynamic Threshold Voltage MOS) transistors are employed in the design to effectively use the ultra low supply voltage. The proposed VDTA is composed of two operational transconductance amplifiers operating in the subthreshold region. Using TSMC 0.18µm process technology parameters with symmetric ±0.2V sup¬ply voltage, the total power consumption of the VDTA block is found as just 5.96 nW when the transconductances have 3.3 kHz, 3 dB bandwidth. The proposed VDTA circuit is then used in a fourth-order double-tuned band-pass filter for processing real EEG data measurements. The filter achieves close to 64 dB dynamic range at 2% THD with a total power consumption of 12.7 nW

Low-power CMOS digital-pixel Imagers for high-speed uncooled PbSe IR applications

This PhD dissertation describes the research and development of a new low-cost medium wavelength infrared MWIR monolithic imager technology for high-speed uncooled industrial applications. It takes the baton on the latest technological advances in the field of vapour phase deposition (VPD) PbSe-based medium wavelength IR (MWIR) detection accomplished by the industrial partner NIT S.L., adding fundamental knowledge on the investigation of novel VLSI analog and mixed-signal design techniques at circuit and system levels for the development of the readout integrated device attached to the detector. The work supports on the hypothesis that, by the use of the preceding design techniques, current standard inexpensive CMOS technologies fulfill all operational requirements of the VPD PbSe detector in terms of connectivity, reliability, functionality and scalability to integrate the device. The resulting monolithic PbSe-CMOS camera must consume very low power, operate at kHz frequencies, exhibit good uniformity and fit the CMOS read-out active pixels in the compact pitch of the focal plane, all while addressing the particular characteristics of the MWIR detector: high dark-to-signal ratios, large input parasitic capacitance values and remarkable mismatching in PbSe integration. In order to achieve these demands, this thesis proposes null inter-pixel crosstalk vision sensor architectures based on a digital-only focal plane array (FPA) of configurable pixel sensors. Each digital pixel sensor (DPS) cell is equipped with fast communication modules, self-biasing, offset cancellation, analog-to-digital converter (ADC) and fixed pattern noise (FPN) correction. In-pixel power consumption is minimized by the use of comprehensive MOSFET subthreshold operation. The main aim is to potentiate the integration of PbSe-based infra-red (IR)-image sensing technologies so as to widen its use, not only in distinct scenarios, but also at different stages of PbSe-CMOS integration maturity. For this purpose, we posit to investigate a comprehensive set of functional blocks distributed in two parallel approaches: • Frame-based “Smart” MWIR imaging based on new DPS circuit topologies with gain and offset FPN correction capabilities. This research line exploits the detector pitch to offer fully-digital programmability at pixel level and complete functionality with input parasitic capacitance compensation and internal frame memory. • Frame-free “Compact”-pitch MWIR vision based on a novel DPS lossless analog integrator and configurable temporal difference, combined with asynchronous communication protocols inside the focal plane. This strategy is conceived to allow extensive pitch compaction and readout speed increase by the suppression of in-pixel digital filtering, and the use of dynamic bandwidth allocation in each pixel of the FPA. In order make the electrical validation of first prototypes independent of the expensive PbSe deposition processes at wafer level, investigation is extended as well to the development of affordable sensor emulation strategies and integrated test platforms specifically oriented to image read-out integrated circuits. DPS cells, imagers and test chips have been fabricated and characterized in standard 0.15μm 1P6M, 0.35μm 2P4M and 2.5μm 2P1M CMOS technologies, all as part of research projects with industrial partnership. The research has led to the first high-speed uncooled frame-based IR quantum imager monolithically fabricated in a standard VLSI CMOS technology, and has given rise to the Tachyon series [1], a new line of commercial IR cameras used in real-time industrial, environmental and transportation control systems. The frame-free architectures investigated in this work represent a firm step forward to push further pixel pitch and system bandwidth up to the limits imposed by the evolving PbSe detector in future generations of the device.La present tesi doctoral descriu la recerca i el desenvolupament d'una nova tecnologia monolítica d'imatgeria infraroja de longitud d'ona mitja (MWIR), no refrigerada i de baix cost, per a usos industrials d'alta velocitat. El treball pren el relleu dels últims avenços assolits pel soci industrial NIT S.L. en el camp dels detectors MWIR de PbSe depositats en fase vapor (VPD), afegint-hi coneixement fonamental en la investigació de noves tècniques de disseny de circuits VLSI analògics i mixtes pel desenvolupament del dispositiu integrat de lectura unit al detector pixelat. Es parteix de la hipòtesi que, mitjançant l'ús de les esmentades tècniques de disseny, les tecnologies CMOS estàndard satisfan tots els requeriments operacionals del detector VPD PbSe respecte a connectivitat, fiabilitat, funcionalitat i escalabilitat per integrar de forma econòmica el dispositiu. La càmera PbSe-CMOS resultant ha de consumir molt baixa potència, operar a freqüències de kHz, exhibir bona uniformitat, i encabir els píxels actius CMOS de lectura en el pitch compacte del pla focal de la imatge, tot atenent a les particulars característiques del detector: altes relacions de corrent d'obscuritat a senyal, elevats valors de capacitat paràsita a l'entrada i dispersions importants en el procés de fabricació. Amb la finalitat de complir amb els requisits previs, es proposen arquitectures de sensors de visió de molt baix acoblament interpíxel basades en l'ús d'una matriu de pla focal (FPA) de píxels actius exclusivament digitals. Cada píxel sensor digital (DPS) està equipat amb mòduls de comunicació d'alta velocitat, autopolarització, cancel·lació de l'offset, conversió analògica-digital (ADC) i correcció del soroll de patró fixe (FPN). El consum en cada cel·la es minimitza fent un ús exhaustiu del MOSFET operant en subllindar. L'objectiu últim és potenciar la integració de les tecnologies de sensat d'imatge infraroja (IR) basades en PbSe per expandir-ne el seu ús, no només a diferents escenaris, sinó també en diferents estadis de maduresa de la integració PbSe-CMOS. En aquest sentit, es proposa investigar un conjunt complet de blocs funcionals distribuïts en dos enfocs paral·lels: - Dispositius d'imatgeria MWIR "Smart" basats en frames utilitzant noves topologies de circuit DPS amb correcció de l'FPN en guany i offset. Aquesta línia de recerca exprimeix el pitch del detector per oferir una programabilitat completament digital a nivell de píxel i plena funcionalitat amb compensació de la capacitat paràsita d'entrada i memòria interna de fotograma. - Dispositius de visió MWIR "Compact"-pitch "frame-free" en base a un novedós esquema d'integració analògica en el DPS i diferenciació temporal configurable, combinats amb protocols de comunicació asíncrons dins del pla focal. Aquesta estratègia es concep per permetre una alta compactació del pitch i un increment de la velocitat de lectura, mitjançant la supressió del filtrat digital intern i l'assignació dinàmica de l'ample de banda a cada píxel de l'FPA. Per tal d'independitzar la validació elèctrica dels primers prototips respecte a costosos processos de deposició del PbSe sensor a nivell d'oblia, la recerca s'amplia també al desenvolupament de noves estratègies d'emulació del detector d'IR i plataformes de test integrades especialment orientades a circuits integrats de lectura d'imatge. Cel·les DPS, dispositius d'imatge i xips de test s'han fabricat i caracteritzat, respectivament, en tecnologies CMOS estàndard 0.15 micres 1P6M, 0.35 micres 2P4M i 2.5 micres 2P1M, tots dins el marc de projectes de recerca amb socis industrials. Aquest treball ha conduït a la fabricació del primer dispositiu quàntic d'imatgeria IR d'alta velocitat, no refrigerat, basat en frames, i monolíticament fabricat en tecnologia VLSI CMOS estàndard, i ha donat lloc a Tachyon, una nova línia de càmeres IR comercials emprades en sistemes de control industrial, mediambiental i de transport en temps real.Postprint (published version