Infrastructures and Algorithms for Testable and Dependable Systems-on-a-Chip

Every new node of semiconductor technologies provides further miniaturization and higher performances, increasing the number of advanced functions that electronic products can offer. Silicon area is now so cheap that industries can integrate in a single chip usually referred to as System-on-Chip (SoC), all the components and functions that historically were placed on a hardware board. Although adding such advanced functionality can benefit users, the manufacturing process is becoming finer and denser, making chips more susceptible to defects. Today’s very deep-submicron semiconductor technologies (0.13 micron and below) have reached susceptibility levels that put conventional semiconductor manufacturing at an impasse. Being able to rapidly develop, manufacture, test, diagnose and verify such complex new chips and products is crucial for the continued success of our economy at-large. This trend is expected to continue at least for the next ten years making possible the design and production of 100 million transistor chips. To speed up the research, the National Technology Roadmap for Semiconductors identified in 1997 a number of major hurdles to be overcome. Some of these hurdles are related to test and dependability. Test is one of the most critical tasks in the semiconductor production process where Integrated Circuits (ICs) are tested several times starting from the wafer probing to the end of production test. Test is not only necessary to assure fault free devices but it also plays a key role in analyzing defects in the manufacturing process. This last point has high relevance since increasing time-to-market pressure on semiconductor fabrication often forces foundries to start volume production on a given semiconductor technology node before reaching the defect densities, and hence yield levels, traditionally obtained at that stage. The feedback derived from test is the only way to analyze and isolate many of the defects in today’s processes and to increase process’s yield. With the increasing need of high quality electronic products, at each new physical assembly level, such as board and system assembly, test is used for debugging, diagnosing and repairing the sub-assemblies in their new environment. Similarly, the increasing reliability, availability and serviceability requirements, lead the users of high-end products performing periodic tests in the field throughout the full life cycle. To allow advancements in each one of the above scaling trends, fundamental changes are expected to emerge in different Integrated Circuits (ICs) realization disciplines such as IC design, packaging and silicon process. These changes have a direct impact on test methods, tools and equipment. Conventional test equipment and methodologies will be inadequate to assure high quality levels. On chip specialized block dedicated to test, usually referred to as Infrastructure IP (Intellectual Property), need to be developed and included in the new complex designs to assure that new chips will be adequately tested, diagnosed, measured, debugged and even sometimes repaired. In this thesis, some of the scaling trends in designing new complex SoCs will be analyzed one at a time, observing their implications on test and identifying the key hurdles/challenges to be addressed. The goal of the remaining of the thesis is the presentation of possible solutions. It is not sufficient to address just one of the challenges; all must be met at the same time to fulfill the market requirements

Integration of a Digital Built-in Self-Test for On-Chip Memories

The ability of testing on-chip circuitry is extremely essential to ASIC implemen- tations today. However, providing functional tests and verification for on-chip (embedded) memories always poses a huge number of challenges to the designer. Therefore, a co-existing automated built-in self-test block with the Design Under Test (DUT) seems crucial to provide comprehensive, efficient and robust testing features. The target DUT of this thesis project is the state-of-the-arts Ultra Low Power (ULP) dual-port SRAMs designed in ASIC group of EIT department at Lund University. This thesis starts from system RTL modeling and verification from an earlier project, and then goes through ASIC design phase in 28 nm FD-SOI technology from ST-Microelectronics. All scripts during the ASIC design phase are developed in TCL. This design is implemented with multiple power domains (using CPF approach and introducing level-shifters at crossing-points between domains) and multiple clock sources in order to make it possible to perform various measurements with a high reliability on different flavours of a dual-port SRAM.This design is able to reduce dramatically the complexity of verification and measurement to integrated memories. This digital integrated circuit (IC) is developed as an application-specific IC (ASIC) chip for functional verification of integrated memories and measuring them in different aspects such as power consumption. The design is automated and capable of being reconfigured easily in terms of required actions and data for testing on-chip memories. Put it in other words, this design has automated and optimized the generation of what data to be stored on which location on memories as well as how they have been treated and interpreted later on. For instance, it refreshes and delivers different operation modes and working patterns to the entire test system in order to fully utilize integrated memories, of which such an automation is instructed by the stimuli to the chip. Besides, the pattern generation of the stimuli is implemented on MATLAB in an automated way. Due to constant advancements in chip manufacturing technology, more devices are squeezed into the same silicon area. Meaning that in order to monitor more internal signals introduced by the increased complexity of the circuits, more dedicated input/output ports (the physical interface between the chip internal signals and outside world) are required, that makes the chip bonding and testing in the future difficult and time-consuming. Additionally, memories usually have a bigger number of pins for signal reactions than other circuit blocks do, the method of dealing with so many pins should also be taken into account. Thus, a few techniques are adopted in this system to assist the designers deal with all mentioned issues. Once the ASIC chip has been fabricated (manufactured) and bonded, the on-chip memories can be tested directly on a printed circuit board in a simple and flexible way: Once test instruction input is loaded into the chip, the system starts to update the system settings and then to generate the internal configurations(parameters) so that all different operations, modes or instructions related to memory testing are automatically processed

Always-On 674uW @ 4GOP/s Error Resilient Binary Neural Networks with Aggressive SRAM Voltage Scaling on a 22nm IoT End-Node

Binary Neural Networks (BNNs) have been shown to be robust to random bit-level noise, making aggressive voltage scaling attractive as a power-saving technique for both logic and SRAMs. In this work, we introduce the first fully programmable IoT end-node system-on-chip (SoC) capable of executing software-defined, hardware-accelerated BNNs at ultra-low voltage. Our SoC exploits a hybrid memory scheme where error-vulnerable SRAMs are complemented by reliable standard-cell memories to safely store critical data under aggressive voltage scaling. On a prototype in 22nm FDX technology, we demonstrate that both the logic and SRAM voltage can be dropped to 0.5Vwithout any accuracy penalty on a BNN trained for the CIFAR-10 dataset, improving energy efficiency by 2.2X w.r.t. nominal conditions. Furthermore, we show that the supply voltage can be dropped to 0.42V (50% of nominal) while keeping more than99% of the nominal accuracy (with a bit error rate ~1/1000). In this operating point, our prototype performs 4Gop/s (15.4Inference/s on the CIFAR-10 dataset) by computing up to 13binary ops per pJ, achieving 22.8 Inference/s/mW while keeping within a peak power envelope of 674uW - low enough to enable always-on operation in ultra-low power smart cameras, long-lifetime environmental sensors, and insect-sized pico-drones.Comment: Submitted to ISICAS2020 journal special issu

From FPGA to ASIC: A RISC-V processor experience

This work document a correct design flow using these tools in the Lagarto RISC- V Processor and the RTL design considerations that must be taken into account, to move from a design for FPGA to design for ASIC

Low-power digital processor for wireless sensor networks

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.Includes bibliographical references (p. 69-72).In order to make sensor networks cost-effective and practical, the electronic components of a wireless sensor node need to run for months to years on the same battery. This thesis explores the design of a low-power digital processor for these sensor nodes, employing techniques such as hardwired algorithms, lowered supply voltages, clock gating and subsystem shutdown. Prototypes were built on both a FPGA and ASIC platform, in order to verify functionality and characterize power consumption. The resulting 0.18[micro]m silicon fabricated in National Semiconductor Corporation's process was operational for supply voltages ranging from 0.5V to 1.8V. At the lowest operating voltage of 0.5V and a frequency of 100KHz, the chip performs 8 full-accuracy FFT computations per second and draws 1.2nJ of total energy per cycle. Although this energy/cycle metric does not surpass existing low-energy processors demonstrated in literature or commercial products, several low-power techniques are suggested that could drastically improve the energy metrics of a future implementation.by Daniel Frederic Finchelstein.S.M

Efficient Built In Self Repair Strategy for Embedded SRAM with selecteble redundancy

Built-in self -test (BIST) refers to those testing techniques where additional hardware is added to a design so that testing is accomplished without the aid of external hardware. Usually, a pseudo-random generator is used to apply test vectors to the circuit under test and a data compactor is used to produce a signature. To increase the reliability and yield of embedded memories, many redundancy mechanisms have been proposed. All the redundancy mechanisms bring penalty of area and complexity to embedded memories design. Considered that compiler is used to configure SRAM for different needs, the BISR had better bring no change to other modules in SRAM. To solve the problem, a new redundancy scheme is proposed in this paper. Some normal words in embedded memories can be selected as redundancy instead of adding spare words, spare rows, spare columns or spare blocks. Built-In Self-Repair (BISR) with Redundancy is an effective yield-enhancement strategy for embedded memories. This paper proposes an efficient BISR strategy which consists of a Built-In Self-Test (BIST) module, a Built-In Address-Analysis (BIAA) module and a Multiplexer (MUX) module. The BISR is designed flexible that it can provide four operation modes to SRAM users. Each fault address can be saved only once is the feature of the proposed BISR strategy. In BIAA module, fault addresses and redundant ones form a one- to- one mapping to achieve a high repair speed. Besides, instead of adding spare words, rows, columns or blocks in the SRAMs, users can select normal words as redundancy

Multi-port Memory Design for Advanced Computer Architectures

In this thesis, we describe and evaluate novel memory designs for multi-port on-chip and off-chip use in advanced computer architectures. We focus on combining multi-porting and evaluating the performance over a range of design parameters. Multi-porting is essential for caches and shared-data systems, especially multi-core System-on-chips (SOC). It can significantly increase the memory access throughput. We evaluate FinFET voltage-mode multi-port SRAM cells using different metrics including leakage current, static noise margin and read/write performance. Simulation results show that single-ended multi-port FinFET SRAMs with isolated read ports offer improved read stability and flexibility over classical double-ended structures at the expense of write performance. By increasing the size of the access transistors, we show that the single-ended multi-port structures can achieve equivalent write performance to the classical double-ended multi-port structure for 9% area overhead. Moreover, compared with CMOS SRAM, FinFET SRAM has better stability and standby power. We also describe new methods for the design of FinFET current-mode multi-port SRAM cells. Current-mode SRAMs avoid the full-swing of the bitline, reducing dynamic power and access time. However, that comes at the cost of voltage drop, which compromises stability. The design proposed in this thesis utilizes the feature of Independent Gate (IG) mode FinFET, which can leverage threshold voltage by controlling the back gate voltage, to merge two transistors into one through high-Vt and low-Vt transistors. This design not only reduces the voltage drop, but it also reduces the area in multi-port current-mode SRAM design. For off-chip memory, we propose a novel two-port 1-read, 1-write (1R1W) phasechange memory (PCM) cell, which significantly reduces the probability of blocking at the bank levels. Different from the traditional PCM cell, the access transistors are at the top and connected to the bitline. We use Verilog-A to model the behavior of Ge2Sb2Te5 (GST: the storage component). We evaluate the performance of the two-port cell by transistor sizing and voltage pumping. Simulation results show that pMOS transistor is more practical than nMOS transistor as the access device when both area and power are considered. The estimated area overhead is 1.7�, compared to single-port PCM cell. In brief, the contribution we make in this thesis is that we propose and evaluate three different kinds of multi-port memories that are favorable for advanced computer architectures

Techniques for Aging, Soft Errors and Temperature to Increase the Reliability of Embedded On-Chip Systems

This thesis investigates the challenge of providing an abstracted, yet sufficiently accurate reliability estimation for embedded on-chip systems. In addition, it also proposes new techniques to increase the reliability of register files within processors against aging effects and soft errors. It also introduces a novel thermal measurement setup that perspicuously captures the infrared images of modern multi-core processors

Testing Embedded Memories in Telecommunication Systems

Extensive system testing is mandatory nowadays to achieve high product quality. Telecommunication systems are particularly sensitive to such a requirement; to maintain market competitiveness, manufacturers need to combine reduced costs, shorter life cycles, advanced technologies, and high quality. Moreover, strict reliability constraints usually impose very low fault latencies and a high degree of fault detection for both permanent and transient faults. This article analyzes major problems related to testing complex telecommunication systems, with particular emphasis on their memory modules, often so critical from the reliability point of view. In particular, advanced BIST-based solutions are analyzed, and two significant industrial case studies presente