The development of an in-vivo dosimeter for the application in radiotherapy

This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.The expectation for continual improvements in the treatment of cancer has brought quality assurance in radiotherapy under scrutiny in recent years. After a cancer diagnosis a custom treatment plan is devised to meet the particular needs of the patient's condition based on their prognosis. A cancer treatment plan will typically comprise of several cancer treatment technologies combining to form a comprehensive programme to fight the malignant growth. Inherent in each cancer treatment technology is a percentage error in treatment accuracy. Quality assurance is the medical practice to minimise the percentage error in treatment accuracy. Radiotherapy is one of the several cancer treatment technologies a patient might receive as part of their treatment plan, and in-vivo dosimetry is a quality assurance technology specifically designed to minimise the percentage error in the treatment accuracy of radiotherapy. This thesis outlines the work completed in the design of a next generation dosimeter for in-vivo dosimetry. The proposed dosimeter is intended to modernise the process of measuring the absorbed dose of ionising radiation received by the target volume during a radiotherapy session. To accomplish this goal the new dosimeter will amalgamate specialist technologies from the field of particle physics and reapply them to the field of medical physics. This thesis describes the design of a new implantable in-vivo dosimeter, a dosimeter comprising of several individual stages of electronics working together to modernise quality assurance in radiotherapy. Presented within this thesis are the results demonstrating the performance of two critical stages for this new dosimeter, including: the oating gate metal oxide field effective transistor, a radiation sensitive electronic component measuring an absorbed dose of radiation; and the micro antenna, a highly specialist wireless communications device working to transmit a high frequency radio signal. This was a collaborative project between Rutherford Appleton Laboratory and Brunel University. The presented work in this thesis was completed between March 2007 and January 2011.This study is funded by the Science and Technology Facilities Council

Radiation damage effects in charge coupled devices

This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.The effects of Sr90 beta radiation and Co60 gamma radiation on the operation of EEV buried channel charge coupled devices (CCDs) have been studied. This work was instigated by the need to qualify CCDs for the SLD vertex detector. However, the work is also relevant to other small signal, low noise applications. The results of the batch qualification are presented and the data base of ionising radiation effects on EEV CCDs has been extended to include the effects of irradiation whilst clocking at 180K. Particular attention has been aimed at investigating the charge transfer degradation due to low levels of bulk defects. The measured energy level, capture cross section and introduction rate of the main radiation induced defect agrees well with published results for the Si-E centre. Annealing studies are also presented. A model for the charge transfer degradation is proposed. This includes the effects of temperature, readout rate, signal density and irradiation type and energy. Observations are also presented on the effect of irradiation on the noise characteristics of the single stage output circuit. For low noise applications the output is run in buried channel mode. In this mode the increase in noise is dominated by the change in the operating point of the output MOSFET.EEV and the Science and Engineering Research Counci

Radiation Damage in CMOS Image Sensors for Space Applications

The space radiation environment is damaging to silicon devices, such as Complementary Metal Oxide Semiconductor (CMOS) image sensors, affecting their performance over time or causing total failure. The first part of this work investigates a Charge Coupled Device (CCD) style CMOS image sensor designed for TDI (Time Delay and Integration) mode imaging, a mode commonly used for Earth observation. Damage from high energy protons in the space environment decreases the Charge Transfer Efficiency (CTE) and increases the dark current of such devices. Experimental work on proton damaged devices is presented, showing the effects on CTE and dark current. The results are compared to a standard CCD by a simulation to take into account the different dimensions and operating conditions of the two devices. The second part of this work describes an experimental campaign to determine the effects of process variations (namely the introduction of deep doping wells and the variation of epitaxial silicon thickness) on the rate of Single Event Latchup (SEL) in CMOS Active Pixel Sensor (APS) devices. SEL is a potentially destructive phenomenon which occurs in CMOS technology but not in CCDs. Test devices were subjected to heavy ion bombardement and SEL rates recorded for a range of heavy ions causing varying amounts of ionisation. A simulation using Technology Computer Aided Design (TCAD) was developed to predict the SEL rates due to heavy ions and to understand the characteristic shape of the SEL cross section vs. Linear Energy Transfer (LET) curves produced by SEL experiments. The simuation was carried out for structures representative of each of the design variants

Temperature-Dependent Dynamic on Resistance in Gamma-Irradiated AlGaN/GaN Power HEMTs

Dynamic RON is a key parameter in terms of device reliability and the efficiency of power-switching converters. In this study, commercial off-the-shelf GaN-on-Si power high-electron-mobility transistors (HEMTs) were irradiated using different regimes of accumulative gamma rays with a 60Co source of photon energy (1.33 MeV), while a base temperature of 53 °C and 133 °C during the irradiation test was applied. This test campaign had the objective of investigating how the combination of gamma irradiation and temperature affects dynamic on-resistance (RON) behaviour. The results indicated that gate voltage bias stress affected the degradation of dynamic on-resistance when irradiation was applied, and that temperature was an accelerating factor in dynamic on-resistance degradation. Finally, we obtained a partial reduction in dynamic RON when a total ionising dose of around 140 krad(SiO2) was applied and the base temperature during the irradiation test was not high

Characterisation of CMOS APS Technologies for Space Applications

In recent years, the performance of scientific CMOS active pixel sensors has been improved to the point that it is now approaching that of the current silicon sensor of choice, CCDs. For some applications, CMOS APSs is believed to present significant advantages over CCDs, such as improved radiation hardness. In this work, the effect of radiation damage on a ‘baseline’ commercial APS, e2v technologies’ Jade APS, is characterised in response to gamma, proton and heavy ion irradiation. Specific performance problems encountered during this radiation characterisation, such as dark current non-uniformity under gamma irradiation, random telegraph signals under proton irradiation, and single event effects under heavy ion irradiation are described and analyzed. The X-ray spectroscopic imaging performance of the device is measured and compared to the Ocean Colour Imager APS test array showing progress towards a high frame rate spectroscopic X-ray imager for space science. The implications of these results for using similar devices in space applications are considered. Furthermore, possible novel techniques for measuring inter-pixel responsivity non-uniformity, heavy ion detection and spectroscopy, and measuring the dynamics of radiation-induced trap formation are discussed

Improved Accuracy Area Efficient Hybrid CMOS/GaN DC-DC Buck Converterfor High Step-Down Ratio Applications

abstract: Point of Load (POL) DC-DC converters are increasingly used in space applications, data centres, electric vehicles, portable computers and devices and medical electronics. Heavy computing and processing capabilities of the modern devices have ushered the use of higher battery supply voltage to increase power storage. The need to address this consumer experience driven requirement has propelled the evolution of the next generation of small form-factor power converters which can operate with higher step down ratios while supplying heavy continuous load currents without sacrificing efficiency. Constant On-Time (COT) converter topology is capable of achieving stable operation at high conversion ratio with minimum off-chip components and small silicon area. This work proposes a Constant On-Time buck dc-dc converter for a wide dynamic input range and load currents from 100mA to 10A. Accuracy of this ripple based converter is improved by a unique voltage positioning technique which modulates the reference voltage to lower the average ripple profile close to the nominal output. Adaptive On-time block features a transient enhancement scheme to assist in faster voltage droop recovery when the output voltage dips below a defined threshold. UtilizingGallium Nitride (GaN) power switches enable the proposed converter to achieve very high efficiency while using smaller size inductor-capacitor (LC) power-stage. Use of novel Superjunction devices with higher drain-source blocking voltage simplifies the complex driver design and enables faster frequency of operation. It allows 1.8VComplementary Metal-Oxide Semiconductor (CMOS) devices to effectively drive GaNpower FETs which require 5V gate signal swing. The presented controller circuit uses internal ripple generation which reduces reliance on output cap equivalent series resistance (ESR) for loop stability and facilitates ripples reduction at the output. The ripple generation network is designed to provide ai optimally stable performance while maintaining load regulation and line regulation accuracy withing specified margin. The chip with ts external Power FET package is proposed to be integrated on a printed circuit board for testing. The designed power converter is expected to operate under 200 MRad of a total ionising dose of radiation enabling it to function within large hadron collider at CERN and space satellite and probe missions.Dissertation/ThesisMasters Thesis Electrical Engineering 201

Improvements to MOS CCD technology for future X-ray astronomy missions

This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.This thesis is concerned with the development of MOS charge-coupled device (CCD) technology for future applications in X-ray astronomy. Of particular interest is increased detection efficiency of high energy X-ray photons and increased pixel readout speed for large area sensors. Chapter 2 reviews the generation of X-rays, methods for extra-terrestrial X-ray observations, detectors and provides an overview of X-ray astronomy missions. Chapter 3 discusses the CCD and introduces some of the recent technological developments that improve their overall performance for optical and X-ray photon detection. Chapter 4 presents the basic laboratory equipment and methods used to carry out the experimental work of this thesis. Chapter 5 presents the characterisation of new high resistivity devices that were manufactured by e2v technologies during the work of this thesis. Chapter 6 describes a method for estimating the depletion depth of a CCD by analysing the X-ray event patterns that are generated in CCD image data. Chapter 7 presents the equipment developed and experimental measurements taken to evaluate the high energy X-ray quantum efficiency of a high resistivity CCD. Finally, Chapter 8 describes the ongoing development and characterisation of low noise ASICs that are intended for use in future X-ray astronomy missions

Characterising the CMOS Image Sensor for the JANUS Camera on ESA’s JUICE Mission to Jupiter

The subject of this thesis is the characterisation of a scientific Complementary Metal Oxide Semiconductor (CMOS) image sensor to be used on the JANUS camera on ESA’s JUICE mission to Jupiter. The first part of this thesis investigates the initial characteristics of the device to better understand how changes in these characteristics manifest themselves over a range of tests. Initially, following total ionising dose and displacement damage, an increase in the dark current is observed. At temperatures above room temperature, it is theorised that the dark current is proportional to the exponent of the band gap of silicon. Following thermal annealing of these irradiated devices a slight recovery in the average dark current is noticed, which can be credited to the annealing of some radiation induced defects. The second part of this work investigates how image lag manifests in the image sensor, where a transitionary point to high level image lag is observed, referred to as the image lag ‘knee-point’. The signal that this knee point occurs is studied with varying total ionising dose and transfer gate voltages, allowing the cause to be hypothesised and an optimum operating condition to be recommended. The image lag is also investigated on a pixel-by-pixel basis, which is a novel approach compared to the typical average level across the whole image sensor. Measurements with devices exposed to total non-ionising doses demonstrate the creation of a population of pixels that exhibit higher levels of image lag than average, an effect that has been attributed to displacement damage in the image sensor