DESIGN, MODELING, OPTIMIZATION, AND BENCHMARKING OF INTERCONNECTS AND SCALING TECHNOLOGIES AND THEIR CIRCUIT AND SYSTEM LEVEL IMPACT

This research focuses on the future of integrated circuit (IC) scaling technologies at the device and back end of line (BEOL) level. This work includes high level modeling of different technologies and quantifying potential performance gains on a circuit and system level. From the device side, this research looks at the scaling challenges and the future scaling drivers for conventional charge-based devices implemented at the 7nm technology node and beyond. It examines the system-level performance of stacking device logic in addition to tunneling field effect transistors (TFET) and their potential as beyond-CMOS devices. Finally, this research models and benchmarks BEOL scaling challenges and evaluates proposed technological advancements such as metal barrier scaling for copper interconnects and replacing local interconnects with ruthenium. Potential impact on performance, power, and area of these interconnect technologies is quantified for fully placed and routed circuits.Ph.D

Modeling and Analysis of Noise and Interconnects for On-Chip Communication Link Design

This thesis considers modeling and analysis of noise and interconnects in onchip communication. Besides transistor count and speed, the capabilities of a modern design are often limited by on-chip communication links. These links typically consist of multiple interconnects that run parallel to each other for long distances between functional or memory blocks. Due to the scaling of technology, the interconnects have considerable electrical parasitics that affect their performance, power dissipation and signal integrity. Furthermore, because of electromagnetic coupling, the interconnects in the link need to be considered as an interacting group instead of as isolated signal paths. There is a need for accurate and computationally effective models in the early stages of the chip design process to assess or optimize issues affecting these interconnects. For this purpose, a set of analytical models is developed for on-chip data links in this thesis. First, a model is proposed for modeling crosstalk and intersymbol interference. The model takes into account the effects of inductance, initial states and bit sequences. Intersymbol interference is shown to affect crosstalk voltage and propagation delay depending on bus throughput and the amount of inductance. Next, a model is proposed for the switching current of a coupled bus. The model is combined with an existing model to evaluate power supply noise. The model is then applied to reduce both functional crosstalk and power supply noise caused by a bus as a trade-off with time. The proposed reduction method is shown to be effective in reducing long-range crosstalk noise. The effects of process variation on encoded signaling are then modeled. In encoded signaling, the input signals to a bus are encoded using additional signaling circuitry. The proposed model includes variation in both the signaling circuitry and in the wires to calculate the total delay variation of a bus. The model is applied to study level-encoded dual-rail and 1-of-4 signaling. In addition to regular voltage-mode and encoded voltage-mode signaling, current-mode signaling is a promising technique for global communication. A model for energy dissipation in RLC current-mode signaling is proposed in the thesis. The energy is derived separately for the driver, wire and receiver termination.Siirretty Doriast

Heterogeneous 2.5D integration on through silicon interposer

© 2015 AIP Publishing LLC. Driven by the need to reduce the power consumption of mobile devices, and servers/data centers, and yet continue to deliver improved performance and experience by the end consumer of digital data, the semiconductor industry is looking for new technologies for manufacturing integrated circuits (ICs). In this quest, power consumed in transferring data over copper interconnects is a sizeable portion that needs to be addressed now and continuing over the next few decades. 2.5D Through-Si-Interposer (TSI) is a strong candidate to deliver improved performance while consuming lower power than in previous generations of servers/data centers and mobile devices. These low-power/high-performance advantages are realized through achievement of high interconnect densities on the TSI (higher than ever seen on Printed Circuit Boards (PCBs) or organic substrates), and enabling heterogeneous integration on the TSI platform where individual ICs are assembled at close proximity

Solid State Circuits Technologies

The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book

Through-silicon-via-aware prediction and physical design for multi-granularity 3D integrated circuits

The main objective of this research is to predict the wirelength, area, delay, and power of multi-granularity three-dimensional integrated circuits (3D ICs), to develop physical design methodologies and algorithms for the design of multi-granularity 3D ICs, and to investigate the impact of through-silicon vias (TSVs) on the quality of 3D ICs. This dissertation supports these objectives by addressing six research topics. The first pertains to analytical models that predict the interconnects of multi-granularity 3D ICs, and the second focuses on the development of analytical models of the capacitive coupling of TSVs. The third and the fourth topics present design methodologies and algorithms for the design of gate- and block-level 3D ICs, and the fifth topic pertains to the impact of TSVs on the quality of 3D ICs. The final topic addresses topography variation in 3D ICs. The first section of this dissertation presents TSV-aware interconnect prediction models for multi-granularity 3D ICs. As previous interconnect prediction models for 3D ICs did not take TSV area into account, they were not capable of predicting many important characteristics of 3D ICs related to TSVs. This section will present several previous interconnect prediction models that have been improved so that the area occupied by TSVs is taken into account. The new models show numerous important predictions such as the existence of the number of TSVs minimizing wirelength. The second section presents fast estimation of capacitive coupling of TSVs and wires. Since TSV-to-TSV and TSV-to-wire coupling capacitance is dependent on their relative locations, fast estimation of the coupling capacitance of a TSV is essential for the timing optimization of 3D ICs. Simulation results show that the analytical models presented in this section are sufficiently accurate for use at various design steps that require the computation of TSV capacitance. The third and fourth sections present design methodologies and algorithms for gate- and block-level 3D ICs. One of the biggest differences in the design of 2D and 3D ICs is that the latter requires TSV insertion. Since no widely-accepted design methodology designates when, where, and how TSVs are inserted, this work develops and presents several design methodologies for gate- and block-level 3D ICs and physical design algorithms supporting them. Simulation results based on GDSII-level layouts validate the design methodologies and present evidence of their effectiveness. The fifth section explores the impact of TSVs on the quality of 3D ICs. As TSVs become smaller, devices are shrinking, too. Since the relative size of TSVs and devices is more critical to the quality of 3D ICs than the absolute size of TSVs and devices, TSVs and devices should be taken into account in the study of the impact of TSVs on the quality of 3D ICs. In this section, current and future TSVs and devices are combined to produce 3D IC layouts and the impact of TSVs on the quality of 3D ICs is investigated. The final section investigates topography variation in 3D ICs. Since landing pads fabricated in the bottommost metal layer are attached to TSVs, they are larger than TSVs, so they could result in serious topography variation. Therefore, topography variation, especially in the bottommost metal layer, is investigated and two layout optimization techniques are applied to a global placement algorithm that minimizes the topography variation of the bottommost metal layer of 3D ICs.PhDCommittee Chair: Lim, Sung Kyu; Committee Member: Bakir, Muhannad; Committee Member: Kim, Hyesoon; Committee Member: Lee, Hsien-Hsin Sean; Committee Member: Mukhopadhyay, Saiba

Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications

Im Rahmen der vorliegenden Dissertation zum Thema „Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications“ wurde auf Basis einer 130 nm SiGe BiCMOS Technologie ein Through-Silicon Via (TSV) Technologiemodul zur Herstellung elektrischer Durchkontaktierungen für die Anwendung im Millimeterwellen und Sub-THz Frequenzbereich entwickelt. TSVs wurden mittels elektromagnetischer Simulationen modelliert und in Bezug auf ihre elektrischen Eigenschaften bis in den sub-THz Bereich bis zu 300 GHz optimiert. Es wurden die Wechselwirkungen zwischen Modellierung, Fertigungstechnologie und den elektrischen Eigenschaften untersucht. Besonderes Augenmerk wurde auf die technologischen Einflussfaktoren gelegt. Daraus schlussfolgernd wurde das TSV Technologiemodul entwickelt und in eine SiGe BiCMOS Technologie integriert. Hierzu wurde eine Via-Middle Integration gewählt, welche eine Freilegung der TSVs von der Wafer Rückseite erfordert. Durch die geringe Waferdicke von ca. 75 μm wird einen Carrier Wafer Handling Prozess verwendet. Dieser Prozess wurde unter der Randbedingung entwickelt, dass eine nachfolgende Bearbeitung der Wafer innerhalb der BiCMOS Pilotlinie erfolgen kann. Die Rückseitenbearbeitung zielt darauf ab, einen Redistribution Layer auf der Rückseite der BiCMOS Wafer zu realisieren. Hierzu wurde ein Prozess entwickelt, um gleichzeitig verschiedene TSV Strukturen mit variablen Geometrien zu realisieren und damit eine hohe TSV Design Flexibilität zu gewährleisten. Die TSV Strukturen wurden von DC bis über 300 GHz charakterisiert und die elektrischen Eigenschaften extrahiert. Dabei wurde gezeigt, dass TSV Verbindungen mit sehr geringer Dämpfung <1 dB bis 300 GHz realisierbar sind und somit ausgezeichnete Hochfrequenzeigenschaften aufweisen. Zuletzt wurden vielfältige Anwendungen wie das Grounding von Hochfrequenzschaltkreisen, Interposer mit Waveguides und 300 GHz Antennen dargestellt. Das Potential für Millimeterwellen Packaging und 3D Integration wurde evaluiert. TSV Technologien sind heutzutage in vielen Anwendungen z.B. im Bereich der Systemintegration von Digitalschaltkreisen und der Spannungsversorgung von integrierten Schaltkreisen etabliert. Im Rahmen dieser Arbeit wurde der Einsatz von TSVs für Millimeterwellen und dem sub-THz Frequenzbereich untersucht und die Anwendung für den sub-THz Bereich bis 300 GHz demonstriert. Dadurch werden neue Möglichkeiten der Systemintegration und des Packaging von Höchstfrequenzsystemen geschaffen.:Bibliographische Beschreibung List of symbols and abbreviations Acknowledgement 1. Introduction 2. FEM Modeling of BiCMOS & Interposer Through-Silicon Vias 3. Fabrication of BiCMOS & Silicon Interposer with TSVs 4. Characterization of BiCMOS Embedded Through-Silicon Vias 5. Applications 6. Conclusion and Future Work 7. Appendix 8. Publications & Patents 9. Bibliography 10. List of Figures and Table

The Development Of A Capacitive Parasitic Element Extraction And Estimation Methodology To Improve Design Cycle

In the chip industry today, the key goals of a chip development organization is to develop and market chips within a short timeframe to gain foothold on market share. Despite this requirement, chip design and manufacturing are increasing in level of complexity due to advancement in process technology. Thus, the objective of this research is to propose a design flow around the area of parasitic extraction to improve the design cycle timeline. The proposed design flow utilizes the usage of metal fill emulation as opposed to current flow which performs metal fill insertion directly. By replacing metal fill structures with an emulation methodology in earlier iterations of the design flow, this is targeted to help reduce runtime in fill insertion stage. Design of experiments methodology utilizing RCBD, ANOVA and Fisher’s LSD are used to select an appropriate emulated metal fill width to improve emulation accuracy. The experiment is conducted on 45nm and 65nm process technologies and test cases of different sizes, ranging from 1000 gates to 21000 gates to observe differences exhibited in the outcome. When compared with the general design flow, around 92% of all the nets in the design show differences of lesser than 15% in capacitance value for 45nm and 88% for 65nm. This is in line with the permissible error of a 2.5D parasitic extraction engine to achieve within 20% difference in extracted capacitance values. Runtime reduction achieved was from 41% to 43% lesser than the general design flow for the number of 15 iterations. In industrial usage, this flow is appropriate for new designs where number of iterations required due to design optimization is high

DFM Techniques for the Detection and Mitigation of Hotspots in Nanometer Technology

With the continuous scaling down of dimensions in advanced technology nodes, process variations are getting worse for each new node. Process variations have a large influence on the quality and yield of the designed and manufactured circuits. There is a growing need for fast and efficient techniques to characterize and mitigate the effects of different sources of process variations on the design's performance and yield. In this thesis we have studied the various sources of systematic process variations and their effects on the circuit, and the various methodologies to combat systematic process variation in the design space. We developed abstract and accurate process variability models, that would model systematic intra-die variations. The models convert the variation in process into variation in electrical parameters of devices and hence variation in circuit performance (timing and leakage) without the need for circuit simulation. And as the analysis and mitigation techniques are studied in different levels of the design ow, we proposed a flow for combating the systematic process variation in nano-meter CMOS technology. By calculating the effects of variability on the electrical performance of circuits we can gauge the importance of the accurate analysis and model-driven corrections. We presented an automated framework that allows the integration of circuit analysis with process variability modeling to optimize the computer intense process simulation steps and optimize the usage of variation mitigation techniques. And we used the results obtained from using this framework to develop a relation between layout regularity and resilience of the devices to process variation. We used these findings to develop a novel technique for fast detection of critical failures (hotspots) resulting from process variation. We showed that our approach is superior to other published techniques in both accuracy and predictability. Finally, we presented an automated method for fixing the lithography hotspots. Our method showed success rate of 99% in fixing hotspots

Structure discovery techniques for circuit design and process model visualization

Graphs are one of the most used abstractions in many knowledge fields because of the easy and flexibility by which graphs can represent relationships between objects. The pervasiveness of graphs in many disciplines means that huge amounts of data are available in graph form, allowing many opportunities for the extraction of useful structure from these graphs in order to produce insight into the data. In this thesis we introduce a series of techniques to resolve well-known challenges in the areas of digital circuit design and process mining. The underlying idea that ties all the approaches together is discovering structures in graphs. We show how many problems of practical importance in these areas can be solved utilizing both common and novel structure mining approaches. In the area of digital circuit design, this thesis proposes automatically discovering frequent, repetitive structures in a circuit netlist in order to improve the quality of physical planning. These structures can be used during floorplanning to produce regular designs, which are known to be highly efficient and economical. At the same time, detecting these repeating structures can exponentially reduce the total design time. The second focus of this thesis is in the area of the visualization of process models. Process mining is a recent area of research which centers on studying the behavior of real-life systems and their interactions with the environment. Complicated process models, however, hamper this goal. By discovering the important structures in these models, we propose a series of methods that can derive visualization-friendly process models with minimal loss in accuracy. In addition, and combining the areas of circuit design and process mining, this thesis opens the area of specification mining in asynchronous circuits. Instead of the usual design flow, which involves synthesizing circuits from specifications, our proposal discovers specifications from implemented circuits. This area allows for many opportunities for verification and re-synthesis of asynchronous circuits. The proposed methods have been tested using real-life benchmarks, and the quality of the results compared to the state-of-the-art.Els grafs són una de les representacions abstractes més comuns en molts camps de recerca, gràcies a la facilitat i flexibilitat amb la que poden representar relacions entre objectes. Aquesta popularitat fa que una gran quantitat de dades es puguin trobar en forma de graf, i obre moltes oportunitats per a extreure estructures d'aquest grafs, útils per tal de donar una intuïció millor de les dades subjacents. En aquesta tesi introduïm una sèrie de tècniques per resoldre reptes habitualment trobats en les àrees de disseny de circuits digitals i mineria de processos industrials. La idea comú sota tots els mètodes proposats es descobrir automàticament estructures en grafs. En la tesi es mostra que molts problemes trobats a la pràctica en aquestes àrees poden ser resolts utilitzant nous mètodes de descobriment d'estructures. En l'àrea de disseny de circuits, proposem descobrir, automàticament, estructures freqüents i repetitives en les definicions del circuit per tal de millorar la qualitat de les etapes posteriors de planificació física. Les estructures descobertes poden fer-se servir durant la planificació per produir dissenys regulars, que son molt més econòmics d'implementar. Al mateix temps, la descoberta i ús d'aquestes estructures pot reduir exponencialment el temps total de disseny. El segon punt focal d'aquesta tesi és en l'àrea de la visualització de models de processos industrials. La mineria de processos industrials es un tema jove de recerca que es centra en estudiar el comportament de sistemes reals i les interaccions d'aquests sistemes amb l'entorn. No obstant, quan d'aquest anàlisi s'obtenen models massa complexos visualment, l'estudi n'és problemàtic. Proposem una sèrie de mètodes que, gràcies al descobriment automàtic de les estructures més importants, poden generar models molt més fàcils de visualitzar que encara descriuen el comportament del sistema amb gran precisió. Combinant les àrees de disseny de circuits i mineria de processos, aquesta tesi també obre un nou tema de recerca: la mineria d'especificacions per circuits asíncrons. En l'estil de disseny asíncron habitual, sintetitzadors automàtics generen circuits a partir de les especificacions. En aquesta tesi proposem el pas invers: descobrir automàticament les especificacions de circuits ja implementats. Així, creem noves oportunitats per a la verificació i la re-síntesi de circuits asíncrons. Els mètodes proposats en aquesta tesi s'han validat fent servir dades obtingudes d'aplicacions pràctiques, i en comparem els resultats amb els mètodes existents

VThreads: A novel VLIW chip multiprocessor with hardware-assisted PThreads

We discuss VThreads, a novel VLIW CMP with hardware-assisted shared-memory Thread support. VThreads supports Instruction Level Parallelism via static multiple-issue and Thread Level Parallelism via hardware-assisted POSIX Threads along with extensive customization. It allows the instantiation of tightlycoupled streaming accelerators and supports up to 7-address Multiple-Input, Multiple-Output instruction extensions. VThreads is designed in technology-independent Register-Transfer-Level VHDL and prototyped on 40 nm and 28 nm Field-Programmable gate arrays. It was evaluated against a PThreads-based multiprocessor based on the Sparc-V8 ISA. On a 65 nm ASIC implementation VThreads achieves up to x7.2 performance increase on synthetic benchmarks, x5 on a parallel Mandelbrot implementation, 66% better on a threaded JPEG implementation, 79% better on an edge-detection benchmark and ~13% improvement on DES compared to the Leon3MP CMP. In the range of 2 to 8 cores VThreads demonstrates a post-route (statistical) power reduction between 65% to 57% at an area increase of 1.2%-10% for 1-8 cores, compared to a similarly-configured Leon3MP CMP. This combination of micro-architectural features, scalability, extensibility, hardware support for low-latency PThreads, power efficiency and area make the processor an attractive proposition for low-power, deeply-embedded applications requiring minimum OS support