A programmable microsystem using system-on-chip for real-time biotelemetry

A telemetry microsystem, including multiple sensors, integrated instrumentation and a wireless interface has been implemented. We have employed a methodology akin to that for System-on-Chip microelectronics to design an integrated circuit instrument containing several "intellectual property" blocks that will enable convenient reuse of modules in future projects. The present system was optimized for low-power and included mixed-signal sensor circuits, a programmable digital system, a feedback clock control loop and RF circuits integrated on a 5 mm × 5 mm silicon chip using a 0.6 μm, 3.3 V CMOS process. Undesirable signal coupling between circuit components has been investigated and current injection into sensitive instrumentation nodes was minimized by careful floor-planning. The chip, the sensors, a magnetic induction-based transmitter and two silver oxide cells were packaged into a 36 mm × 12 mm capsule format. A base station was built in order to retrieve the data from the microsystem in real-time. The base station was designed to be adaptive and timing tolerant since the microsystem design was simplified to reduce power consumption and size. The telemetry system was found to have a packet error rate of 10<sup>-</sup><sup>3</sup> using an asynchronous simplex link. Trials in animal carcasses were carried out to show that the transmitter was as effective as a conventional RF device whilst consuming less power

Contribution to time domain readout circuits design for multi-standard sensing system for low voltage supply and high-resolution applications

Mención Internacional en el título de doctorThis research activity has the purpose of open new possibilities in the design of capacitance-to-digital converters (CDCs) by developing a solution based on time domain conversion. This can be applied to applications related with the Internet-of-Things (IoT). These applications are present in any electronic devices where sensing is needed. To be able to reduce the area of the whole system with the required performance, micro-electromechanical systems (MEMS) sensors are used in these applications. We propose a new family of sensor readout electronics to be integrated with MEMS sensors. Within the time domain converters, Dual Slope (DS) topology is very interesting to explore a new compromise between performances, area and power consumption. DS topology has been extensively used in instrumentation. The simplicity and robustness of the blocks inside classical DS converters it is the main advantage. However, they are not efficient for applications where higher bandwidth is required. To extend the bandwidth, DS converters have been introduced into ΔΣ loops. This topology has been named as integrating converters. They increase the bandwidth compare to classical DS architecture but at the expense of higher complexity. In this work we propose the use of a new family of DS converters that keep the advantages of the classical architecture and introduce noise shaping. This way the bandwidth is increased without extra blocks. The Self-Compensated noise-shaped DS converter (the name given to the new topology) keeps the signal transfer function (STF) and the noise transfer function (NTF) of Integrating converters. However, we introduce a new arrangement in the core of the converter to do noise shaping without extra circuitry. This way the simplicity of the architecture is preserved. We propose to use the Self-Compensated DS converter as a CDC for MEMS sensors. This work makes a study of the best possible integration of the two blocks to keep the signal integrity considering the electromechanical behavior of the sensor. The purpose of this front-end is to be connected to any kind of capacitive MEMS sensor. However, to prove the concepts developed in this thesis the architecture has been connected to a pressure MEMS sensor. An experimental prototype was implemented in 130-nm CMOS process using the architecture mentioned before. A peak SNR of 103.9 dB (equivalent to 1Pa) has been achieved within a time measurement of 20 ms. The final prototype has a power consumption of 220 μW with an effective area of 0.317 mm2. The designed architecture shows good performance having competitive numbers against high resolution topologies in amplitude domain.Esta actividad de investigación tiene el propósito de explorar nuevas posibilidades en el diseño de convertidores de capacitancia a digital (CDC) mediante el desarrollo de una solución basada en la conversión en el dominio del tiempo. Estos convertidores se pueden utilizar en aplicaciones relacionadas con el mercado del Internet-de-las-cosas (IoT). Hoy en día, estas aplicaciones están presentes en cualquier dispositivo electrónico donde se necesite sensar una magnitud. Para poder reducir el área de todo el sistema con el rendimiento requerido, se utilizan sensores de sistemas micro-electromecánicos (MEMS) en estas aplicaciones. Proponemos una nueva familia de electrónica de acondicionamiento para integrar con sensores MEMS. Dentro de los convertidores de dominio de tiempo, la topología del doble-rampa (DS) es muy interesante para explorar un nuevo compromiso entre rendimiento, área y consumo de energía. La topología de DS se ha usado ampliamente en instrumentación. La simplicidad y la solidez de los bloques dentro de los convertidores DS clásicos es la principal ventaja. Sin embargo, no son eficientes para aplicaciones donde se requiere mayor ancho de banda. Para ampliar el ancho de banda, los convertidores DS se han introducido en bucles ΔΣ. Esta topología ha sido nombrada como Integrating converters. Esta topología aumenta el ancho de banda en comparación con la arquitectura clásica de DS, pero a expensas de una mayor complejidad. En este trabajo, proponemos el uso de una nueva familia de convertidores DS que mantienen las ventajas de la arquitectura clásica e introducen la configuración del ruido. De esta forma, el ancho de banda aumenta sin bloques adicionales. El convertidor Self-Compensated noise-shaped DS (el nombre dado a la nueva topología) mantiene la función de transferencia de señal (STF) y la función de transferencia de ruido (NTF) de los Integrating converters. Sin embargo, presentamos una nueva topología en el núcleo del convertidor para conformar el ruido sin circuitos adicionales. De esta manera, se preserva la simplicidad de la arquitectura. Proponemos utilizar el Self-Compensated noise-shaped DS como un CDC para sensores MEMS. Este trabajo hace un estudio de la mejor integración posible de los dos bloques para mantener la integridad de la señal considerando el comportamiento electromecánico del sensor. El propósito de este circuito de acondicionamiento es conectarse a cualquier tipo de sensor MEMS capacitivo. Sin embargo, para demostrar los conceptos desarrollados en esta tesis, la arquitectura se ha conectado a un sensor MEMS de presión. Se ha implementado dos prototipos experimentales en un proceso CMOS de 130-nm utilizando la arquitectura mencionada anteriormente. Se ha logrado una relación señal-ruido máxima de 103.9 dB (equivalente a 1 Pa) con un tiempo de medida de 20 ms. El prototipo final tiene un consumo de energía de 220 μW con un área efectiva de 0.317 mm2. La arquitectura diseñada muestra un buen rendimiento comparable con las arquitecturas en el dominio de la amplitud que muestran resoluciones equivalentes.Programa Oficial de Doctorado en Ingeniería Eléctrica, Electrónica y AutomáticaPresidente: Pieter Rombouts.- Secretario: Alberto Rodríguez Pérez.- Vocal: Dietmar Strãußnig

CMOS VLSI correlator design for radio-astronomical signal processing : a thesis presented in partial fulfilment of the requirements for the degree of Doctor of Philosophy in Engineering at Massey University, Auckland, New Zealand

Multi-element radio telescopes employ methods of indirect imaging to capture the image of the sky. These methods are in contrast to direct imaging methods whereby the image is constructed from sensor measurements directly and involve extensive signal processing on antenna signals. The Square Kilometre Array, or the SKA, is a future radio telescope of this type that, once built, will become the largest telescope in the world. The unprecedented scale of the SKA requires novel solutions to be developed for its signal processing pipeline one of the most resource-consuming parts of which is the correlator. The SKA uses the FX correlator construction that consists of two parts: the F part that translates antenna signals into frequency domain and the X part that cross-correlates these signals between each other. This research focuses on the integrated circuit design and VLSI implementation issues of the X part of a very large FX correlator in 28 nm and 130 nm CMOS. The correlator’s main processing operation is the complex multiply-accumulation (CMAC) for which custom 28 nm CMAC designs are presented and evaluated. Performance of various memories inside the correlator also affects overall efficiency, and input-buffered and output-buffered approaches are considered with the goal of improving upon it. For output-buffered designs, custom memory control circuits have been designed and prototyped in 130 nm that improve upon eDRAM by taking advantage of sequential access patterns. For the input-buffered architecture, a new scheme is proposed that decreases the usage of the input-buffer memory by a third by making use of multiple accumulators in every CMAC. Because cross-correlation is a very data-intensive process, high-performance SerDes I/O is essential to any practical ASIC implementation. On the I/O design, the 28 nm full-rate transmitter delivering 15 Gbps per lane is presented. This design consists of the scrambler, the serialiser, the digital VCO with analog fine-tuning and the SST driver including features of a 4-tap FFE, impedance tuning and amplitude tuning

Floating-Gate Design and Linearization for Reconfigurable Analog Signal Processing

Analog and mixed-signal integrated circuits have found a place in modern electronics design as a viable alternative to digital pre-processing. With metrics that boast high accuracy and low power consumption, analog pre-processing has opened the door to low-power state-monitoring systems when it is utilized in place of a power-hungry digital signal-processing stage. However, the complicated design process required by analog and mixed-signal systems has been a barrier to broader applications. The implementation of floating-gate transistors has begun to pave the way for a more reasonable approach to analog design. Floating-gate technology has widespread use in the digital domain. Analog and mixed-signal use of floating-gate transistors has only become a rising field of study in recent years. Analog floating gates allow for low-power implementation of mixed-signal systems, such as the field-programmable analog array, while simultaneously opening the door to complex signal-processing techniques. The field-programmable analog array, which leverages floating-gate technologies, is demonstrated as a reliable replacement to signal-processing tasks previously only solved by custom design. Living in an analog world demands the constant use and refinement of analog signal processing for the purpose of interfacing with digital systems. This work offers a comprehensive look at utilizing floating-gate transistors as the core element for analog signal-processing tasks. This work demonstrates the floating gate\u27s merit in large reconfigurable array-driven systems and in smaller-scale implementations, such as linearization techniques for oscillators and analog-to-digital converters. A study on analog floating-gate reliability is complemented with a temperature compensation scheme for implementing these systems in ever-changing, realistic environments

Built-in-self-test of RF front-end circuitry

Fuelled by the ever increasing demand for wireless products and the advent of deep submicron CMOS, RF ICs have become fairly commonplace in the semiconductor market. This has given rise to a new breed of Systems-On-Chip (SOCs) with RF front-ends tightly integrated along with digital, analog and mixed signal circuitry. However, the reliability of the integrated RF front-end continues to be a matter of significant concern and considerable research. A major challenge to the reliability of RF ICs is the fact that their performance is also severely degraded by wide tolerances in on-chip passives and package parasitics, in addition to process related faults. Due to the absence of contact based testing solutions in embedded RF SOCs (because the very act of probing may affect the performance of the RF circuit), coupled with the presence of very few test access nodes, a Built In Self Test approach (BiST) may prove to be the most efficient test scheme. However due to the associated challenges, a comprehensive and low-overhead BiST methodology for on-chip testing of RF ICs has not yet been reported in literature. In the current work, an approach to RF self-test that has hitherto been unexplored both in literature and in the commercial arena is proposed. A sensitive current monitor has been used to extract variations in the supply current drawn by the circuit-under-test (CUT). These variations are then processed in time and frequency domain to develop signatures. The acquired signatures can then be mapped to specific behavioral anomalies and the locations of these anomalies. The CUT is first excited by simple test inputs that can be generated on-chip. The current monitor extracts the corresponding variations in the supply current of the CUT, thereby creating signatures that map to various performance metrics of the circuit. These signatures can then be post-processed by low overhead on-chip circuitry and converted into an accessible form. To be successful in the RF domain any BIST architecture must be minimally invasive, reliable, offer good fault coverage and present low real estate and power overheads. The current-based self-test approach successfully addresses all these concerns. The technique has been applied to RF Low Noise Amplifiers, Mixers and Voltage Controlled Oscillators. The circuitry and post-processing techniques have also been demonstrated in silicon (using the IBM 0.25 micron RF CMOS process). The entire self-test of the RF front-end can be accomplished with a total test time of approximately 30µs, which is several orders of magnitude better than existing commercial test schemes

Circuits and Systems for On-Chip RF Chemical Sensors and RF FDD Duplexers

Integrating RF bio-chemical sensors and RF duplexers helps to reduce cost and area in the current applications. Furthermore, new applications can exist based on the large scale integration of these crucial blocks. This dissertation addresses the integration of RF bio-chemical sensors and RF duplexers by proposing these initiatives. A low power integrated LC-oscillator-based broadband dielectric spectroscopy (BDS) system is presented. The real relative permittivity ε’r is measured as a shift in the oscillator frequency using an on-chip frequency-to-digital converter (FDC). The imaginary relative permittivity ε”r increases the losses of the oscillator tank which mandates a higher dc biasing current to preserve the same oscillation amplitude. An amplitude-locked loop (ALL) is used to fix the amplitude and linearize the relation between the oscillator bias current and ε”r. The proposed BDS system employs a sensing oscillator and a reference oscillator where correlated double sampling (CDS) is used to mitigate the impact of flicker noise, temperature variations and frequency drifts. A prototype is implemented in 0.18 µm CMOS process with total chip area of 6.24 mm^2 to operate in 1-6 GHz range using three dual bands LC oscillators. The achieved standard deviation in the air is 2.1 ppm for frequency reading and 110 ppm for current reading. A tunable integrated electrical balanced duplexer (EBD) is presented as a compact alternative to multiple bulky SAW and BAW duplexers in 3G/4G cellular transceivers. A balancing network creates a replica of the transmitter signal for cancellation at the input of a single-ended low noise amplifier (LNA) to isolate the receive path from the transmitter. The proposed passive EBD is based on a cross-connected transformer topology without the need of any extra balun at the antenna side. The duplexer achieves around 50 dB TX-RX isolation within 1.6-2.2 GHz range up to 22 dBm. The cascaded noise figure of the duplexer and LNA is 6.5 dB, and TX insertion loss (TXIL) of the duplexer is about 3.2 dB. The duplexer and LNA are implemented in 0.18 µm CMOS process and occupy an active area of 0.35 mm^2

A wireless RF CMOS mixed-signal interface for soil moisture measurements

This paper describes a wireless RF CMOS interface for soil moisture measurements. The interface basically comprises a Delta-Sigma (ΔΣ) modulator for acquiring an external sensor signal, and a RF section where data is transmitted to a local processing unit. The ΔΣ modulator is a single-bit, second-order modulator and it is implemented using switched-capacitors techniques in a fully-differential topology. With a sampling frequency of 423.75 kHz and an oversampling ratio (OSR) of 256, the modulator achieves a dynamic range of 98.7 dB (16.1 bit). The output of the modulator is applied to a counter, as a first-order decimation filter, and the result is stored. Prior to transmission, data is encoded as a pulse width modulated signal and assembled in a frame containing preamble and checksum control fields. This frame is then transmitted through a power amplifier operating at 433.92 MHz in class-E mode. To evaluate the ΔΣ modulator performance, the bitstream was acquired and transferred to a personal computer to perform digital filtering and decimation using MATLAB. The soil moisture sensor is based on dual-probe heat-pulse (DPHP) method and is implemented by using an integrated temperature sensor and a heater. After applying a heat-pulse for a fixed period of time, the temperature rise, that is a function of soil moisture, generates a differential voltage that is amplified and applied to the mixed-signal interface input. The described interface can also be used with other kinds of environmental sensors in a wireless sensors network. The CMOS mixed-signal interface has been implemented in a single-chip using a standard CMOS 0.7 μm process (AMI C07M-A, n-well, 2 metals and 1 poly)

Concepts for Short Range Millimeter-wave Miniaturized Radar Systems with Built-in Self-Test

This work explores short-range millimeter wave radar systems, with emphasis on miniaturization and overall system cost reduction. The designing and implementation processes, starting from the system level design considerations and characterization of the individual components to final implementation of the proposed architecture are described briefly. Several D-band radar systems are developed and their functionality and performances are demonstrated