Design of variation-tolerant synchronizers for multiple clock and voltage domains

PhD ThesisParametric variability increasingly affects the performance of electronic circuits as the fabrication technology has reached the level of 32nm and beyond. These parameters may include transistor Process parameters (such as threshold voltage), supply Voltage and Temperature (PVT), all of which could have a significant impact on the speed and power consumption of the circuit, particularly if the variations exceed the design margins. As systems are designed with more asynchronous protocols, there is a need for highly robust synchronizers and arbiters. These components are often used as interfaces between communication links of different timing domains as well as sampling devices for asynchronous inputs coming from external components. These applications have created a need for new robust designs of synchronizers and arbiters that can tolerate process, voltage and temperature variations. The aim of this study was to investigate how synchronizers and arbiters should be designed to tolerate parametric variations. All investigations focused mainly on circuit-level and transistor level designs and were modeled and simulated in the UMC90nm CMOS technology process. Analog simulations were used to measure timing parameters and power consumption along with a “Monte Carlo” statistical analysis to account for process variations. Two main components of synchronizers and arbiters were primarily investigated: flip-flop and mutual-exclusion element (MUTEX). Both components can violate the input timing conditions, setup and hold window times, which could cause metastability inside their bistable elements and possibly end in failures. The mean-time between failures is an important reliability feature of any synchronizer delay through the synchronizer. The MUTEX study focused on the classical circuit, in addition to a number of tolerance, based on increasing internal gain by adding current sources, reducing the capacitive loading, boosting the transconductance of the latch, compensating the existing Miller capacitance, and adding asymmetry to maneuver the metastable point. The results showed that some circuits had little or almost no improvements, while five techniques showed significant improvements by reducing τ and maintaining high tolerance. Three design approaches are proposed to provide variation-tolerant synchronizers. wagging synchronizer proposed to First, the is significantly increase reliability over that of the conventional two flip-flop synchronizer. The robustness of the wagging technique can be enhanced by using robust τ latches or adding one more cycle of synchronization. The second approach is the Metastability Auto-Detection and Correction (MADAC) latch which relies on swiftly detecting a metastable event and correcting it by enforcing the previously stored logic value. This technique significantly reduces the resolution time down from uncertain synchronization technique is proposed to transfer signals between Multiple- Voltage Multiple-Clock Domains (MVD/MCD) that do not require conventional level-shifters between the domains or multiple power supplies within each domain. This interface circuit uses a synchronous set and feedback reset protocol which provides level-shifting and synchronization of all signals between the domains, from a wide range of voltage-supplies and clock frequencies. Overall, synchronizer circuits can tolerate variations to a greater extent by employing the wagging technique or using a MADAC latch, while MUTEX tolerance can suffice with small circuit modifications. Communication between MVD/MCD can be achieved by an asynchronous handshake without a need for adding level-shifters.The Saudi Arabian Embassy in London, Umm Al-Qura University, Saudi Arabi

Robust low-power digital circuit design in nano-CMOS technologies

Device scaling has resulted in large scale integrated, high performance, low-power, and low cost systems. However the move towards sub-100 nm technology nodes has increased variability in device characteristics due to large process variations. Variability has severe implications on digital circuit design by causing timing uncertainties in combinational circuits, degrading yield and reliability of memory elements, and increasing power density due to slow scaling of supply voltage. Conventional design methods add large pessimistic safety margins to mitigate increased variability, however, they incur large power and performance loss as the combination of worst cases occurs very rarely. In-situ monitoring of timing failures provides an opportunity to dynamically tune safety margins in proportion to on-chip variability that can significantly minimize power and performance losses. We demonstrated by simulations two delay sensor designs to detect timing failures in advance that can be coupled with different compensation techniques such as voltage scaling, body biasing, or frequency scaling to avoid actual timing failures. Our simulation results using 45 nm and 32 nm technology BSIM4 models indicate significant reduction in total power consumption under temperature and statistical variations. Future work involves using dual sensing to avoid useless voltage scaling that incurs a speed loss. SRAM cache is the first victim of increased process variations that requires handcrafted design to meet area, power, and performance requirements. We have proposed novel 6 transistors (6T), 7 transistors (7T), and 8 transistors (8T)-SRAM cells that enable variability tolerant and low-power SRAM cache designs. Increased sense-amplifier offset voltage due to device mismatch arising from high variability increases delay and power consumption of SRAM design. We have proposed two novel design techniques to reduce offset voltage dependent delays providing a high speed low-power SRAM design. Increasing leakage currents in nano-CMOS technologies pose a major challenge to a low-power reliable design. We have investigated novel segmented supply voltage architecture to reduce leakage power of the SRAM caches since they occupy bulk of the total chip area and power. Future work involves developing leakage reduction methods for the combination logic designs including SRAM peripherals

Soft-Error Resilience Framework For Reliable and Energy-Efficient CMOS Logic and Spintronic Memory Architectures

The revolution in chip manufacturing processes spanning five decades has proliferated high performance and energy-efficient nano-electronic devices across all aspects of daily life. In recent years, CMOS technology scaling has realized billions of transistors within large-scale VLSI chips to elevate performance. However, these advancements have also continually augmented the impact of Single-Event Transient (SET) and Single-Event Upset (SEU) occurrences which precipitate a range of Soft-Error (SE) dependability issues. Consequently, soft-error mitigation techniques have become essential to improve systems\u27 reliability. Herein, first, we proposed optimized soft-error resilience designs to improve robustness of sub-micron computing systems. The proposed approaches were developed to deliver energy-efficiency and tolerate double/multiple errors simultaneously while incurring acceptable speed performance degradation compared to the prior work. Secondly, the impact of Process Variation (PV) at the Near-Threshold Voltage (NTV) region on redundancy-based SE-mitigation approaches for High-Performance Computing (HPC) systems was investigated to highlight the approach that can realize favorable attributes, such as reduced critical datapath delay variation and low speed degradation. Finally, recently, spin-based devices have been widely used to design Non-Volatile (NV) elements such as NV latches and flip-flops, which can be leveraged in normally-off computing architectures for Internet-of-Things (IoT) and energy-harvesting-powered applications. Thus, in the last portion of this dissertation, we design and evaluate for soft-error resilience NV-latching circuits that can achieve intriguing features, such as low energy consumption, high computing performance, and superior soft errors tolerance, i.e., concurrently able to tolerate Multiple Node Upset (MNU), to potentially become a mainstream solution for the aerospace and avionic nanoelectronics. Together, these objectives cooperate to increase energy-efficiency and soft errors mitigation resiliency of larger-scale emerging NV latching circuits within iso-energy constraints. In summary, addressing these reliability concerns is paramount to successful deployment of future reliable and energy-efficient CMOS logic and spintronic memory architectures with deeply-scaled devices operating at low-voltages

Fully Automated Radiation Hardened by Design Circuit Construction

abstract: A fully automated logic design methodology for radiation hardened by design (RHBD) high speed logic using fine grained triple modular redundancy (TMR) is presented. The hardening techniques used in the cell library are described and evaluated, with a focus on both layout techniques that mitigate total ionizing dose (TID) and latchup issues and flip-flop designs that mitigate single event transient (SET) and single event upset (SEU) issues. The base TMR self-correcting master-slave flip-flop is described and compared to more traditional hardening techniques. Additional refinements are presented, including testability features that disable the self-correction to allow detection of manufacturing defects. The circuit approach is validated for hardness using both heavy ion and proton broad beam testing. For synthesis and auto place and route, the methodology and circuits leverage commercial logic design automation tools. These tools are glued together with custom CAD tools designed to enable easy conversion of standard single redundant hardware description language (HDL) files into hardened TMR circuitry. The flow allows hardening of any synthesizable logic at clock frequencies comparable to unhardened designs and supports standard low-power techniques, e.g. clock gating and supply voltage scaling.Dissertation/ThesisPh.D. Electrical Engineering 201

STUDY OF SINGLE-EVENT EFFECTS ON DIGITAL SYSTEMS

Microelectronic devices and systems have been extensively utilized in a variety of radiation environments, ranging from the low-earth orbit to the ground level. A high-energy particle from such an environment may cause voltage/current transients, thereby inducing Single Event Effect (SEE) errors in an Integrated Circuit (IC). Ever since the first SEE error was reported in 1975, this community has made tremendous progress in investigating the mechanisms of SEE and exploring radiation tolerant techniques. However, as the IC technology advances, the existing hardening techniques have been rendered less effective because of the reduced spacing and charge sharing between devices. The Semiconductor Industry Association (SIA) roadmap has identified radiation-induced soft errors as the major threat to the reliable operation of electronic systems in the future. In digital systems, hardening techniques of their core components, such as latches, logic, and clock network, need to be addressed. Two single event tolerant latch designs taking advantage of feedback transistors are presented and evaluated in both single event resilience and overhead. These feedback transistors are turned OFF in the hold mode, thereby yielding a very large resistance. This, in turn, results in a larger feedback delay and higher single event tolerance. On the other hand, these extra transistors are turned ON when the cell is in the write mode. As a result, no significant write delay is introduced. Both designs demonstrate higher upset threshold and lower cross-section when compared to the reference cells. Dynamic logic circuits have intrinsic single event issues in each stage of the operations. The worst case occurs when the output is evaluated logic high, where the pull-up networks are turned OFF. In this case, the circuit fails to recover the output by pulling the output up to the supply rail. A capacitor added to the feedback path increases the node capacitance of the output and the feedback delay, thereby increasing the single event critical charge. Another differential structure that has two differential inputs and outputs eliminates single event upset issues at the expense of an increased number of transistors. Clock networks in advanced technology nodes may cause significant errors in an IC as the devices are more sensitive to single event strikes. Clock mesh is a widely used clocking scheme in a digital system. It was fabricated in a 28nm technology and evaluated through the use of heavy ions and laser irradiation experiments. Superior resistance to radiation strikes was demonstrated during these tests. In addition to mitigating single event issues by using hardened designs, built-in current sensors can be used to detect single event induced currents in the n-well and, if implemented, subsequently execute fault correction actions. These sensors were simulated and fabricated in a 28nm CMOS process. Simulation, as well as, experimental results, substantiates the validity of this sensor design. This manifests itself as an alternative to existing hardening techniques. In conclusion, this work investigates single event effects in digital systems, especially those in deep-submicron or advanced technology nodes. New hardened latch, dynamic logic, clock, and current sensor designs have been presented and evaluated. Through the use of these designs, the single event tolerance of a digital system can be achieved at the expense of varying overhead in terms of area, power, and delay

Study of Layout Techniques in Dynamic Logic Circuitry for Single Event Effect Mitigation

Dynamic logic circuits are highly suitable for high-speed applications, considering the fact that they have a smaller area and faster transition. However, their application in space or other radiation-rich environments has been significantly inhibited by their susceptibility to radiation effects. This work begins with the basic operations of dynamic logic circuits, elaborates upon the physics underlying their radiation vulnerability, and evaluates three techniques that harden dynamic logic from the layout: drain extension, pulse quenching, and a proposed method. The drain extension method adds an extra drain to the sensitive node in order to improve charge sharing, the pulse quenching scheme utilizes charge sharing by duplicating a component that offsets the transient pulse, and the proposed technique takes advantage of both. Domino buffers designed using these three techniques, along with a conventional design as reference, were modeled and simulated using a 3D TCAD tool. Simulation results confirm a significant reduction of soft error rate in the proposed technique and suggest a greater reduction with angled incidence. A 130 nm chip containing designed buffer and register chains was fabricated and tested with heavy ion irradiation. According to the experiment results, the proposed design achieved 30% soft error rate reduction, with 19%, 20%, and 10% overhead in speed, power, and area, respectively

Single Event Effect Hardening Designs in 65nm CMOS Bulk Technology

Radiation from terrestrial and space environments is a great danger to integrated circuits (ICs). A single particle from a radiation environment strikes semiconductor materials resulting in voltage and current perturbation, where errors are induced. This phenomenon is termed a Single Event Effect (SEE). With the shrinking of transistor size, charge sharing between adjacent devices leads to less effectiveness of current radiation hardening methods. Improving fault-tolerance of storage cells and logic gates in advanced technologies becomes urgent and important. A new Single Event Upset (SEU) tolerant latch is proposed based on a previous hardened Quatro design. Soft error analysis tools are used and results show that the critical charge of the proposed design is approximately 2 times higher than that of the reference design with negligible penalty in area, delay, and power consumption. A test chip containing the proposed flip-flop chains was designed and exposed to alpha particles as well as heavy ions. Radiation experimental results indicate that the soft error rates of the proposed design are greatly reduced when Linear Energy Transfer (LET) is lower than 4, which makes it a suitable candidate for ground-level high reliability applications. To improve radiation tolerance of combinational circuits, two combinational logic gates are proposed. One is a layout-based hardening Cascode Voltage Switch Logic (CVSL) and the other is a fault-tolerant differential dynamic logic. Results from a SEE simulation tool indicate that the proposed CVSL has a higher critical charge, less cross section, and shorter Single Event Transient (SET) pulses when compared with reference designs. Simulation results also reveal that the proposed differential dynamic logic significantly reduces the SEU rate compared to traditional dynamic logic, and has a higher critical charge and shorter SET pulses than reference hardened design

Low Power CMOS Design : Exploring Radiation Tolerance in a 90 nm Low Power Commercial Process

This thesis aims to examine radiation tolerance of low power digital CMOS circuits in a commercial 90 nm low power triple-well process from TSMC. By combining supply voltage scaling and Radiation-Hardened By Design (RHBD) design techniques, the goal is to achieve low supply voltage, radiation tolerant, circuit behavior. The target circuit architecture for comparison between different radiation hardening techniques is a Successive Approximation Register (SAR) architecture comprising both combinational and sequential logic. The purpose of the SAR architecture is to emulate a larger system, since larger systems are usually composed of combinational and sequential building blocks. The method used for achieving low power operation is primarily voltage scaling, with the ultimate goal of reaching subthreshold operation, while maintaining radiation tolerant circuit behavior. Radiation hardening is performed on circuit-level by applying RHBD circuit topologies, as well as architectural-level mitigation techniques. This thesis includes three papers within the field of robust low power CMOS design. Two of the papers cover low power level shifter designs in 90 nm and 65 nm process from STMicroelectronics. The third paper examines memory element design using minority-3 gates and inverters for robust low voltage operation. Prototyping has been conducted on low power CMOS building blocks including level shifter and memory design, for potential use in future radiation tolerant designs. Prototyping has been conducted on two chips from two different 90 nm processes from STMicroelectronics and TSMC. A test setup for radiation induced errors has been developed. Experimental radiation tests of the SAR architectures were conducted at SAFE, revealing no radiation induced errors

INVESTIGATING THE EFFECTS OF SINGLE-EVENT UPSETS IN STATIC AND DYNAMIC REGISTERS

Radiation-induced single-event upsets (SEUs) pose a serious threat to the reliability of registers. The existing SEU analyses for static CMOS registers focus on the circuit-level impact and may underestimate the pertinent SEU information provided through node analysis. This thesis proposes SEU node analysis to evaluate the sensitivity of static registers and apply the obtained node information to improve the robustness of the register through selective node hardening (SNH) technique. Unlike previous hardening techniques such as the Triple Modular Redundancy (TMR) and the Dual Interlocked Cell (DICE) latch, the SNH method does not introduce larger area overhead. Moreover, this thesis also explores the impact of SEUs in dynamic flip-flops, which are appealing for the design of high-performance microprocessors. Previous work either uses the approaches for static flip-flops to evaluate SEU effects in dynamic flip-flops or overlook the SEU injected during the precharge phase. In this thesis, possible SEU sensitive nodes in dynamic flip-flops are re-examined and their window of vulnerability (WOV) is extended. Simulation results for SEU analysis in non-hardened dynamic flip-flops reveal that the last 55.3 % of the precharge time and a 100% evaluation time are affected by SEUs

Study of Radiation Tolerant Storage Cells for Digital Systems

Single event upsets (SEUs) are a significant reliability issue in semiconductor devices. Fully Depleted Silicon-on-Insulator (FDSOI) technologies have been shown to exhibit better SEU performance compared to bulk technologies. This is attributed to the thin Silicon (Si) layer on top of a Buried Oxide (BOX) layer, which allows each transistor to function as an insulated Si island, thus reducing the threat of charge-sharing. Moreover, the small volume of the Si in FDSOI devices results in a reduction of the amount of charge induced by an ion strike. The effects of Total Ionizing Dose (TID) on integrated circuits (ICs) can lead to changes in gate propagation delays, leakage currents, and device functionality. When IC circuits are exposed to ionizing radiation, positive charges accumulate in the gate oxide and field oxide layers, which results in reduced gate control and increased leakage current. TID effects in bulk technologies are usually simpler due to the presence of only one gate oxide layer, but FDSOI technologies have a more complex response to TID effects because of the additional BOX layer. In this research, we aim to address the challenges of developing cost-effective electronics for space applications by bridging the gap between expensive space-qualified components and high-performance commercial technologies. Key research questions involve exploring various radiation-hardening-by-design (RHBD) techniques and their trade-offs, as well as investigating the feasibility of radiation-hardened microcontrollers. The effectiveness of RHBD techniques in mitigating soft errors is well-established. In our study, a test chip was designed using the 22-nm FDSOI process, incorporating multiple RHBD Flip-Flop (FF) chains alongside a conventional FF chain. Three distinct types of ring oscillators (ROs) and a 256 kbit SRAM was also fabricated in the test chip. To evaluate the SEU and TID performance of these designs, we conducted multiple irradiation experiments with alpha particles, heavy ions, and gamma-rays. Alpha particle irradiation tests were carried out at the University of Saskatchewan using an Americium-241 alpha source. Heavy ion experiments were performed at the Texas A&M University Cyclotron Institute, utilizing Ne, Ar, Cu, and Ag in a 15 MeV/amu cocktail. Lastly, TID experiments were conducted using a Gammacell 220 Co-60 chamber at the University of Saskatchewan. By evaluating the performance of these designs under various irradiation conditions, we strive to advance the development of cost-effective, high-performance electronics suitable for space applications, ultimately demonstrating the significance of this project. When exposed to heavy ions, radiation-hardened FFs demonstrated varying levels of improvement in SEU performance, albeit with added power and timing penalties compared to conventional designs. Stacked-transistor DFF designs showed significant enhancement, while charge-cancelling and interleaving techniques further reduced upsets. Guard-gate (GG) based FF designs provided additional SEU protection, with the DFR-FF and GG-DICE FF designs showing zero upsets under all test conditions. Schmitt-trigger-based DFF designs exhibited improved SEU performance, making them attractive choices for hardening applications. The 22-nm FDSOI process proved more resilient to TID effects than the 28-nm process; however, TID effects remained prominent, with increased leakage current and SRAM block degradation at high doses. These findings offer valuable insights for designers aiming to meet performance and SER specifications for circuits in radiation environments, emphasizing the need for additional attention during the design phase for complex radiation-hardened circuits