Ultra Low Power Digital Circuit Design for Wireless Sensor Network Applications

Ny forskning innenfor feltet trådløse sensornettverk åpner for nye og innovative produkter og løsninger. Biomedisinske anvendelser er blant områdene med størst potensial og det investeres i dag betydelige beløp for å bruke denne teknologien for å gjøre medisinsk diagnostikk mer effektiv samtidig som man åpner for fjerndiagnostikk basert på trådløse sensornoder integrert i et ”helsenett”. Målet er å forbedre tjenestekvalitet og redusere kostnader samtidig som brukerne skal oppleve forbedret livskvalitet som følge av økt trygghet og mulighet for å tilbringe mest mulig tid i eget hjem og unngå unødvendige sykehusbesøk og innleggelser. For å gjøre dette til en realitet er man avhengige av sensorelektronikk som bruker minst mulig energi slik at man oppnår tilstrekkelig batterilevetid selv med veldig små batterier. I sin avhandling ” Ultra Low power Digital Circuit Design for Wireless Sensor Network Applications” har PhD-kandidat Farshad Moradi fokusert på nye løsninger innenfor konstruksjon av energigjerrig digital kretselektronikk. Avhandlingen presenterer nye løsninger både innenfor aritmetiske og kombinatoriske kretser, samtidig som den studerer nye statiske minneelementer (SRAM) og alternative minnearkitekturer. Den ser også på utfordringene som oppstår når silisiumteknologien nedskaleres i takt med mikroprosessorutviklingen og foreslår løsninger som bidrar til å gjøre kretsløsninger mer robuste og skalerbare i forhold til denne utviklingen. De viktigste konklusjonene av arbeidet er at man ved å introdusere nye konstruksjonsteknikker både er i stand til å redusere energiforbruket samtidig som robusthet og teknologiskalerbarhet øker. Forskningen har vært utført i samarbeid med Purdue University og vært finansiert av Norges Forskningsråd gjennom FRINATprosjektet ”Micropower Sensor Interface in Nanometer CMOS Technology”

Ultra-low Voltage Digital Circuits and Extreme Temperature Electronics Design

Certain applications require digital electronics to operate under extreme conditions e.g., large swings in ambient temperature, very low supply voltage, high radiation. Such applications include sensor networks, wearable electronics, unmanned aerial vehicles, spacecraft, and energyharvesting systems. This dissertation splits into two projects that study digital electronics supplied by ultra-low voltages and build an electronic system for extreme temperatures. The first project introduces techniques that improve circuit reliability at deep subthreshold voltages as well as determine the minimum required supply voltage. These techniques address digital electronic design at several levels: the physical process, gate design, and system architecture. This dissertation analyzes a silicon-on-insulator process, Schmitt-trigger gate design, and asynchronous logic at supply voltages lower than 100 millivolts. The second project describes construction of a sensor digital controller for the lunar environment. Parts of the digital controller are an asynchronous 8031 microprocessor that is compatible with synchronous logic, memory with error detection and correction, and a robust network interface. The digitial sensor ASIC is fabricated on a silicon-germanium process and built with cells optimized for extreme temperatures

NP domino logic gates for Ultra Low Voltage and High Speed applications

In this thesis we present different configurations of digital circuits exploiting Ultra Low Voltage (ULV) NP domino logic style. The proposed logic style is utilized with the help of Floating gate transistors. The proposed NP domino logic gates are aimed to perform high speed operations in Ultra Low Voltage applications. The presented circuits may operate near the sub-threshold regime where the supply voltage is near the threshold voltage of the transistors. In terms of frequency, speed, robustness, Power Delay Product (PDP) and Energy Delay Product (EDP), the proposed ULV NP domino logic gates may offer significant improvement compared to the conventional CMOS logic gates. Different implementations of NOT, NAND and NOR gates are presented using both conventional and Pass Transistor Logic styles. Further, NAND and NOR gates are used to employ different configurations of Carry gates which is a speed limited factor in many arithmetic operations. These ULV NP domino Carry gates are simulated at different supply voltages in the range of 100mV to 400mV, and the performance results are presented with respect to delay, power, PDP and EDP. The proposed ULV NP domino Carry gates are cascaded together to perform addition in a 32-bit chain. The circuits are operated with respect to worst case scenario where the carry signal propagates through the whole chain. Multi-threshold (MTCMOS) and Variable-threshold (VTCMOS) techniques are employed in the ULV domino 32-bit carry chain in order to reduce the power consumption, meanwhile offering superb speed performance. Although the 32-bit carry chain offers a great advantage of speed improvement in the worst case scenario, the chain also introduces the drawback of enormous power consumption in the idle mode. The work in this thesis has resulted in three papers. Two of these papers represent various configurations of 1-bit ULV NP domino Carry gates, while the third paper examines the performance of one of the proposed ULV NP domino Carry gates in a 32-bit chain. The simulation results presented in this thesis are obtained using a 90nm TSMC CMOS process

A novel deep submicron bulk planar sizing strategy for low energy subthreshold standard cell libraries

Engineering andPhysical Science ResearchCouncil (EPSRC) and Arm Ltd for providing funding in the form of grants and studentshipsThis work investigates bulk planar deep submicron semiconductor physics in an attempt to improve standard cell libraries aimed at operation in the subthreshold regime and in Ultra Wide Dynamic Voltage Scaling schemes. The current state of research in the field is examined, with particular emphasis on how subthreshold physical effects degrade robustness, variability and performance. How prevalent these physical effects are in a commercial 65nm library is then investigated by extensive modeling of a BSIM4.5 compact model. Three distinct sizing strategies emerge, cells of each strategy are laid out and post-layout parasitically extracted models simulated to determine the advantages/disadvantages of each. Full custom ring oscillators are designed and manufactured. Measured results reveal a close correlation with the simulated results, with frequency improvements of up to 2.75X/2.43X obs erved for RVT/LVT devices respectively. The experiment provides the first silicon evidence of the improvement capability of the Inverse Narrow Width Effect over a wide supply voltage range, as well as a mechanism of additional temperature stability in the subthreshold regime. A novel sizing strategy is proposed and pursued to determine whether it is able to produce a superior complex circuit design using a commercial digital synthesis flow. Two 128 bit AES cores are synthesized from the novel sizing strategy and compared against a third AES core synthesized from a state-of-the-art subthreshold standard cell library used by ARM. Results show improvements in energy-per-cycle of up to 27.3% and frequency improvements of up to 10.25X. The novel subthreshold sizing strategy proves superior over a temperature range of 0 °C to 85 °C with a nominal (20 °C) improvement in energy-per-cycle of 24% and frequency improvement of 8.65X. A comparison to prior art is then performed. Valid cases are presented where the proposed sizing strategy would be a candidate to produce superior subthreshold circuits

Energy Efficient Design for Deep Sub-micron CMOS VLSIs

Over the past decade, low power, energy efficient VLSI design has been the focal point of active research and development. The rapid technology scaling, the growing integration capacity, and the mounting active and leakage power dissipation are contributing to the growing complexity of modern VLSI design. Careful power planning on all design levels is required. This dissertation tackles the low-power, low-energy challenges in deep sub-micron technologies on the architecture and circuit levels. Voltage scaling is one of the most efficient ways for reducing power and energy. For ultra-low voltage operation, a new circuit technique which allows bulk CMOS circuits to work in the sub-0. 5V supply territory is presented. The threshold voltage of the slow PMOS transistor is controlled dynamically to get a lower threshold voltage during the active mode. Due to the reduced threshold voltage, switching speed becomes faster while active leakage current is increased. A technique to dynamically manage active leakage current is presented. Energy reduction resulting from using the proposed structure is demonstrated through simulations of different circuits with different levels of complexity. As technology scales, the mounting leakage current and degraded noise immunity impact performance especially that of high performance dynamic circuits. Dual threshold technology shows a good potential for leakage reduction while meeting performance goals. A model for optimally selecting threshold voltages and transistor sizes in wide fan-in dynamic circuits is presented. On the circuit level, a novel circuit level technique which handles the trade-off between noise immunity and energy dissipation for wide fan-in dynamic circuits is presented. Energy efficiency of the proposed wide fan-in dynamic circuit is further enhanced through efficient low voltage operation. Another direct consequence of technology scaling is the growing impact of interconnect parasitics and process variations on performance. Traditionally, worst case process, parasitics, and environmental conditions are considered. Designing for worst case guarantees a fail-safe operation but requires a large delay and voltage margins. This large margin can be recovered if the design can adapt to the actual silicon conditions. Dynamic voltage scaling is considered a key enabler in reducing such margin. An on-chip process identifier to recover the margin required due to process variations is described. The proposed architecture adjusts supply voltage using a hybrid between the one-time voltage setting and the continuous monitoring modes of operation. The interconnect impact on delay is minimized through a novel adaptive voltage scaling architecture. The proposed system recovers the large delay and voltage margins required by conventional systems by closely tracking the actual critical path at anytime. By tracking the actual critical path, the proposed system is robust and more energy efficient compared to both the conventional open-loop and closed-loop systems

Design and Analysis of Improved Domino Logic with Noise Tolerance and High Performance

The demands of upcoming computing, as well as the challenges of nanometer-era of VLSI design necessitate new digital logic techniques and styles that are at the same time high performance, energy efficient and robust to noise and variation. Dynamic CMOS logic gates are broadly used to design high performance circuits due to their high speed. Conversely, the vital demerit of dynamic logic style is its high noise sensitivity. The main reason for this is the sub-threshold leakage current flowing through the pull down network. With continuous technology scaling, this problem is getting more and more severe. In this thesis, a new noise tolerant dynamic CMOS circuit technique is proposed. In the proposed work, we have enhanced the behavior of the domino CMOS logic. This technique also gets benefit in terms of delay and power. This thesis describes the new low power, noise tolerant and high speed domino logic technique and presents a comparison result of this logic with previously reported schemes. Simulation results prove that, in 180 nm CMOS technology when we used this logic style to realize wide fan-in logic gates, it could achieve maximum level of noise robustness as compared to its basic counterpart. In addition, the logic also works efficiently with sequential circuits. The feasibility of this new technique is demonstrated by means of a real hardware, we have built a custom test-chip in the UMC 180 nm process technology with an ALU core, using the proposed domino logic style for each design block. In this thesis, we have also described the design and implementation of this chip. In addition to this, we have also presented initial power and delay performance comparisons between the circuit level simulated ALU and test-chip implemented in the proposed domino logic style. Finally we conclude that, the thesis contributes a very efficient logic style for wide fan-in gates, which is not only noise robust but also energy efficient and high speed

Digital ADCs and ultra-wideband RF circuits for energy constrained wireless applications by Denis Clarke Daly.

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.Cataloged from PDF version of thesis.Includes bibliographical references (p. 173-183).Ongoing advances in semiconductor technology have enabled a multitude of portable, low power devices like cellular phones and wireless sensors. Most recently, as transistor device geometries reach the nanometer scale, transistor characteristics have changed so dramatically that many traditional circuits and architectures are no longer optimal and/or feasible. As a solution, much research has focused on developing 'highly digital' circuits and architectures that are tolerant of the increased leakage, variation and degraded voltage headrooms associated with advanced CMOS processes. This thesis presents several highly digital, mixed-signal circuits and architectures designed for energy constrained wireless applications. First, as a case study, a highly digital, voltage scalable flash ADC is presented. The flash ADC, implemented in 0.18 [mu]m CMOS, leverages redundancy and calibration to achieve robust operation at supply voltages from 0.2 V to 0.9 V. Next, the thesis expands in scope to describe a pulsed, noncoherent ultra-wideband transceiver chipset, implemented in 90 nm CMOS and operating in the 3-to-5 GHz band. The all-digital transmitter employs capacitive combining and pulse shaping in the power amplifier to meet the FCC spectral mask without any off-chip filters. The noncoherent receiver system-on-chip achieves both energy efficiency and high performance by employing simple amplifier and ADC structures combined with extensive digital calibration. Finally, the transceiver chipset is integrated in a complete system for wireless insect flight control.(cont.) Through the use of a flexible PCB and 3D die stacking, the total weight of the electronics is kept to 1 g, within the carrying capacity of an adult Manduca sexta moth. Preliminary wireless flight control of a moth in a wind tunnel is demonstrated.Ph.D

Energy efficient hybrid computing systems using spin devices

Emerging spin-devices like magnetic tunnel junctions (MTJ\u27s), spin-valves and domain wall magnets (DWM) have opened new avenues for spin-based logic design. This work explored potential computing applications which can exploit such devices for higher energy-efficiency and performance. The proposed applications involve hybrid design schemes, where charge-based devices supplement the spin-devices, to gain large benefits at the system level. As an example, lateral spin valves (LSV) involve switching of nanomagnets using spin-polarized current injection through a metallic channel such as Cu. Such spin-torque based devices possess several interesting properties that can be exploited for ultra-low power computation. Analog characteristic of spin current facilitate non-Boolean computation like majority evaluation that can be used to model a neuron. The magneto-metallic neurons can operate at ultra-low terminal voltage of ∼20mV, thereby resulting in small computation power. Moreover, since nano-magnets inherently act as memory elements, these devices can facilitate integration of logic and memory in interesting ways. The spin based neurons can be integrated with CMOS and other emerging devices leading to different classes of neuromorphic/non-Von-Neumann architectures. The spin-based designs involve `mixed-mode\u27 processing and hence can provide very compact and ultra-low energy solutions for complex computation blocks, both digital as well as analog. Such low-power, hybrid designs can be suitable for various data processing applications like cognitive computing, associative memory, and currentmode on-chip global interconnects. Simulation results for these applications based on device-circuit co-simulation framework predict more than ∼100x improvement in computation energy as compared to state of the art CMOS design, for optimal spin-device parameters

Power Analysis of Sub-threshold Logics for Security Applications

Requirements of ultra-low power for many portable devices have drawn increased attention to digital sub-threshold logic design. Major reductions in power consumption and frequency of operation degradation due to the exponential decrease of the drain current in the sub-threshold region has made this logic an excellent choice, particularly for ultra-low power applications where performance is not the primary concern. Examples include RFID, wireless sensor networks and biomedical implantable devices. Along with energy consumption, security is another compelling requirement for these applications. Power analysis attacks, such as Correlation Power Analysis (CPA), are a powerful type of side channel attacks that are capable of performing a non-invasive attack with minimum equipment. As such, they present a serious threat to devices with secret information inside. This research analyzes sub-threshold logics from a previously unexplored perspective, side channel information leakage. Various transistor level and RTL circuits are implemented in the sub-threshold region as well as in the strong inversion region (normally the standard region of operation) using a 65 nm process. Measures, such as Difference of Mean Energies (DME), Normalized Energy Deviation (NED) and Normalized Standard Deviation (NSD) are employed to evaluate the implemented architectures. A CPA attack is also performed on more complex designs and the obtained correlation coefficients are used to compare sub-threshold and strong inversion logics. This research demonstrates that sub-threshold does not only increase the security against side channel attacks, but can also decrease the amount of leaked information. This research also shows that a circuit operating at sub-threshold consumes considerably less energy than the same circuit operating in strong inversion and the level of its instantaneous power consumption is significantly lower. Therefore, the noise power required to cover the secret information decreases and the attack may be dramatically more difficult due to major increase in the number of required power traces and run time. Thus, this research is important for identifying sub-threshold as a future viable technology for secure embedded applications

Function Implementation in a Multi-Gate Junctionless FET Structure

Title from PDF of title page, viewed September 18, 2023Dissertation advisor: Mostafizur RahmanVitaIncludes bibliographical references (pages 95-117)Dissertation (Ph.D.)--Department of Computer Science and Electrical Engineering, Department of Physics and Astronomy. University of Missouri--Kansas City, 2023This dissertation explores designing and implementing a multi-gate junctionless field-effect transistor (JLFET) structure and its potential applications beyond conventional devices. The JLFET is a promising alternative to conventional transistors due to its simplified fabrication process and improved electrical characteristics. However, previous research has focused primarily on the device's performance at the individual transistor level, neglecting its potential for implementing complex functions. This dissertation fills this research gap by investigating the function implementation capabilities of the JLFET structure and proposing novel circuit designs based on this technology. The first part of this dissertation presents a comprehensive review of the existing literature on JLFETs, including their fabrication techniques, operating principles, and performance metrics. It highlights the advantages of JLFETs over traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) and discusses the challenges associated with their implementation. Additionally, the review explores the limitations of conventional transistor technologies, emphasizing the need for exploring alternative device architectures. Building upon the theoretical foundation, the dissertation presents a detailed analysis of the multi-gate JLFET structure and its potential for realizing advanced functions. The study explores the impact of different design parameters, such as channel length, gate oxide thickness, and doping profiles, on the device performance. It investigates the trade-offs between power consumption, speed, and noise immunity, and proposes design guidelines for optimizing the function implementation capabilities of the JLFET. To demonstrate the practical applicability of the JLFET structure, this dissertation introduces several novel circuit designs based on this technology. These designs leverage the unique characteristics of the JLFET, such as its steep subthreshold slope and improved on/off current ratio, to implement complex functions efficiently. The proposed circuits include arithmetic units, memory cells, and digital logic gates. Detailed simulations and analyses are conducted to evaluate their performance, power consumption, and scalability. Furthermore, this dissertation explores the potential of the JLFET structure for emerging technologies, such as neuromorphic computing and bioelectronics. It investigates how the JLFET can be employed to realize energy-efficient and biocompatible devices for applications in artificial intelligence and biomedical engineering. The study investigates the compatibility of the JLFET with various materials and substrates, as well as its integration with other functional components. In conclusion, this dissertation contributes to the field of nanoelectronics by providing a comprehensive investigation into the function implementation capabilities of the multi-gate JLFET structure. It highlights the potential of this device beyond its individual transistor performance and proposes novel circuit designs based on this technology. The findings of this research pave the way for the development of advanced electronic systems that are more energy-efficient, faster, and compatible with emerging applications in diverse fields.Introduction -- Literature review -- Crosstalk principle -- Experiment of crosstalk -- Device architecture -- Simulation & results -- Conclusio