Improving Phase Change Memory Performance with Data Content Aware Access

A prominent characteristic of write operation in Phase-Change Memory (PCM) is that its latency and energy are sensitive to the data to be written as well as the content that is overwritten. We observe that overwriting unknown memory content can incur significantly higher latency and energy compared to overwriting known all-zeros or all-ones content. This is because all-zeros or all-ones content is overwritten by programming the PCM cells only in one direction, i.e., using either SET or RESET operations, not both. In this paper, we propose data content aware PCM writes (DATACON), a new mechanism that reduces the latency and energy of PCM writes by redirecting these requests to overwrite memory locations containing all-zeros or all-ones. DATACON operates in three steps. First, it estimates how much a PCM write access would benefit from overwriting known content (e.g., all-zeros, or all-ones) by comprehensively considering the number of set bits in the data to be written, and the energy-latency trade-offs for SET and RESET operations in PCM. Second, it translates the write address to a physical address within memory that contains the best type of content to overwrite, and records this translation in a table for future accesses. We exploit data access locality in workloads to minimize the address translation overhead. Third, it re-initializes unused memory locations with known all-zeros or all-ones content in a manner that does not interfere with regular read and write accesses. DATACON overwrites unknown content only when it is absolutely necessary to do so. We evaluate DATACON with workloads from state-of-the-art machine learning applications, SPEC CPU2017, and NAS Parallel Benchmarks. Results demonstrate that DATACON significantly improves system performance and memory system energy consumption compared to the best of performance-oriented state-of-the-art techniques.Comment: 18 pages, 21 figures, accepted at ACM SIGPLAN International Symposium on Memory Management (ISMM

Exploration of Sub-VT and Near-VT 2T Gain-Cell Memories for Ultra-Low Power Applications under Technology Scaling

Ultra-low power applications often require several kb of embedded memory and are typically operated at the lowest possible operating voltage (VDD) to minimize both dynamic and static power consumption. Embedded memories can easily dominate the overall silicon area of these systems, and their leakage currents often dominate the total power consumption. Gain-cell based embedded DRAM arrays provide a high-density, low-leakage alternative to SRAM for such systems; however, they are typically designed for operation at nominal or only slightly scaled supply voltages. This paper presents a gain-cell array which, for the first time, targets aggressively scaled supply voltages, down into the subthreshold (sub-VT) domain. Minimum VDD design of gain-cell arrays is evaluated in light of technology scaling, considering both a mature 0.18 μm CMOS node, as well as a scaled 40 nm node. We first analyze the trade-offs that characterize the bitcell design in both nodes, arriving at a best-practice design methodology for both mature and scaled technologies. Following this analysis, we propose full gain-cell arrays for each of the nodes, operated at a minimum VDD. We find that an 0.18 μm gain-cell array can be robustly operated at a sub-VT supply voltage of 400mV, providing read/write availability over 99% of the time, despite refresh cycles. This is demonstrated on a 2 kb array, operated at 1 MHz, exhibiting full functionality under parametric variations. As opposed to sub-VT operation at the mature node, we find that the scaled 40 nm node requires a near-threshold 600mV supply to achieve at least 97% read/write availability due to higher leakage currents that limit the bitcell’s retention time. Monte Carlo simulations show that a 600mV 2 kb 40 nm gain-cell array is fully functional at frequencies higher than 50 MHz

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

A Study on Performance and Power Efficiency of Dense Non-Volatile Caches in Multi-Core Systems

In this paper, we present a novel cache design based on Multi-Level Cell Spin-Transfer Torque RAM (MLC STTRAM) that can dynamically adapt the set capacity and associativity to use efficiently the full potential of MLC STTRAM. We exploit the asymmetric nature of the MLC storage scheme to build cache lines featuring heterogeneous performances, that is, half of the cache lines are read-friendly, while the other is write-friendly. Furthermore, we propose to opportunistically deactivate ways in underutilized sets to convert MLC to Single-Level Cell (SLC) mode, which features overall better performance and lifetime. Our ultimate goal is to build a cache architecture that combines the capacity advantages of MLC and performance/energy advantages of SLC. Our experiments show an improvement of 43% in total numbers of conflict misses, 27% in memory access latency, 12% in system performance, and 26% in LLC access energy, with a slight degradation in cache lifetime (about 7%) compared to an SLC cache

Cross-Layer Rapid Prototyping and Synthesis of Application-Specific and Reconfigurable Many-accelerator Platforms

Technological advances of recent years laid the foundation consolidation of informatisationof society, impacting on economic, political, cultural and socialdimensions. At the peak of this realization, today, more and more everydaydevices are connected to the web, giving the term ”Internet of Things”. The futureholds the full connection and interaction of IT and communications systemsto the natural world, delimiting the transition to natural cyber systems and offeringmeta-services in the physical world, such as personalized medical care, autonomoustransportation, smart energy cities etc. . Outlining the necessities of this dynamicallyevolving market, computer engineers are required to implement computingplatforms that incorporate both increased systemic complexity and also cover awide range of meta-characteristics, such as the cost and design time, reliabilityand reuse, which are prescribed by a conflicting set of functional, technical andconstruction constraints. This thesis aims to address these design challenges bydeveloping methodologies and hardware/software co-design tools that enable therapid implementation and efficient synthesis of architectural solutions, which specifyoperating meta-features required by the modern market. Specifically, this thesispresents a) methodologies to accelerate the design flow for both reconfigurableand application-specific architectures, b) coarse-grain heterogeneous architecturaltemplates for processing and communication acceleration and c) efficient multiobjectivesynthesis techniques both at high abstraction level of programming andphysical silicon level.Regarding to the acceleration of the design flow, the proposed methodologyemploys virtual platforms in order to hide architectural details and drastically reducesimulation time. An extension of this framework introduces the systemicco-simulation using reconfigurable acceleration platforms as co-emulation intermediateplatforms. Thus, the development cycle of a hardware/software productis accelerated by moving from a vertical serial flow to a circular interactive loop.Moreover the simulation capabilities are enriched with efficient detection and correctiontechniques of design errors, as well as control methods of performancemetrics of the system according to the desired specifications, during all phasesof the system development. In orthogonal correlation with the aforementionedmethodological framework, a new architectural template is proposed, aiming atbridging the gap between design complexity and technological productivity usingspecialized hardware accelerators in heterogeneous systems-on-chip and networkon-chip platforms. It is presented a novel co-design methodology for the hardwareaccelerators and their respective programming software, including the tasks allocationto the available resources of the system/network. The introduced frameworkprovides implementation techniques for the accelerators, using either conventionalprogramming flows with hardware description language or abstract programmingmodel flows, using techniques from high-level synthesis. In any case, it is providedthe option of systemic measures optimization, such as the processing speed,the throughput, the reliability, the power consumption and the design silicon area.Finally, on addressing the increased complexity in design tools of reconfigurablesystems, there are proposed novel multi-objective optimization evolutionary algo-rithms which exploit the modern multicore processors and the coarse-grain natureof multithreaded programming environments (e.g. OpenMP) in order to reduce theplacement time, while by simultaneously grouping the applications based on theirintrinsic characteristics, the effectively explore the design space effectively.The efficiency of the proposed architectural templates, design tools and methodologyflows is evaluated in relation to the existing edge solutions with applicationsfrom typical computing domains, such as digital signal processing, multimedia andarithmetic complexity, as well as from systemic heterogeneous environments, suchas a computer vision system for autonomous robotic space navigation and manyacceleratorsystems for HPC and workstations/datacenters. The results strengthenthe belief of the author, that this thesis provides competitive expertise to addresscomplex modern - and projected future - design challenges.Οι τεχνολογικές εξελίξεις των τελευταίων ετών έθεσαν τα θεμέλια εδραίωσης της πληροφοριοποίησης της κοινωνίας, επιδρώντας σε οικονομικές,πολιτικές, πολιτιστικές και κοινωνικές διαστάσεις. Στο απόγειο αυτής τη ςπραγμάτωσης, σήμερα, ολοένα και περισσότερες καθημερινές συσκευές συνδέονται στο παγκόσμιο ιστό, αποδίδοντας τον όρο «Ίντερνετ των πραγμάτων».Το μέλλον επιφυλάσσει την πλήρη σύνδεση και αλληλεπίδραση των συστημάτων πληροφορικής και επικοινωνιών με τον φυσικό κόσμο, οριοθετώντας τη μετάβαση στα συστήματα φυσικού κυβερνοχώρου και προσφέροντας μεταυπηρεσίες στον φυσικό κόσμο όπως προσωποποιημένη ιατρική περίθαλψη, αυτόνομες μετακινήσεις, έξυπνες ενεργειακά πόλεις κ.α. . Σκιαγραφώντας τις ανάγκες αυτής της δυναμικά εξελισσόμενης αγοράς, οι μηχανικοί υπολογιστών καλούνται να υλοποιήσουν υπολογιστικές πλατφόρμες που αφενός ενσωματώνουν αυξημένη συστημική πολυπλοκότητα και αφετέρου καλύπτουν ένα ευρύ φάσμα μεταχαρακτηριστικών, όπως λ.χ. το κόστος σχεδιασμού, ο χρόνος σχεδιασμού, η αξιοπιστία και η επαναχρησιμοποίηση, τα οποία προδιαγράφονται από ένα αντικρουόμενο σύνολο λειτουργικών, τεχνολογικών και κατασκευαστικών περιορισμών. Η παρούσα διατριβή στοχεύει στην αντιμετώπιση των παραπάνω σχεδιαστικών προκλήσεων, μέσω της ανάπτυξης μεθοδολογιών και εργαλείων συνσχεδίασης υλικού/λογισμικού που επιτρέπουν την ταχεία υλοποίηση καθώς και την αποδοτική σύνθεση αρχιτεκτονικών λύσεων, οι οποίες προδιαγράφουν τα μετα-χαρακτηριστικά λειτουργίας που απαιτεί η σύγχρονη αγορά. Συγκεκριμένα, στα πλαίσια αυτής της διατριβής, παρουσιάζονται α) μεθοδολογίες επιτάχυνσης της ροής σχεδιασμού τόσο για επαναδιαμορφούμενες όσο και για εξειδικευμένες αρχιτεκτονικές, β) ετερογενή αδρομερή αρχιτεκτονικά πρότυπα επιτάχυνσης επεξεργασίας και επικοινωνίας και γ) αποδοτικές τεχνικές πολυκριτηριακής σύνθεσης τόσο σε υψηλό αφαιρετικό επίπεδο προγραμματισμού,όσο και σε φυσικό επίπεδο πυριτίου.Αναφορικά προς την επιτάχυνση της ροής σχεδιασμού, προτείνεται μια μεθοδολογία που χρησιμοποιεί εικονικές πλατφόρμες, οι οποίες αφαιρώντας τις αρχιτεκτονικές λεπτομέρειες καταφέρνουν να μειώσουν σημαντικά το χρόνο εξομοίωσης. Παράλληλα, εισηγείται η συστημική συν-εξομοίωση με τη χρήση επαναδιαμορφούμενων πλατφορμών, ως μέσων επιτάχυνσης. Με αυτόν τον τρόπο, ο κύκλος ανάπτυξης ενός προϊόντος υλικού, μετατεθειμένος από την κάθετη σειριακή ροή σε έναν κυκλικό αλληλεπιδραστικό βρόγχο, καθίσταται ταχύτερος, ενώ οι δυνατότητες προσομοίωσης εμπλουτίζονται με αποδοτικότερες μεθόδους εντοπισμού και διόρθωσης σχεδιαστικών σφαλμάτων, καθώς και μεθόδους ελέγχου των μετρικών απόδοσης του συστήματος σε σχέση με τις επιθυμητές προδιαγραφές, σε όλες τις φάσεις ανάπτυξης του συστήματος. Σε ορθογώνια συνάφεια με το προαναφερθέν μεθοδολογικό πλαίσιο, προτείνονται νέα αρχιτεκτονικά πρότυπα που στοχεύουν στη γεφύρωση του χάσματος μεταξύ της σχεδιαστικής πολυπλοκότητας και της τεχνολογικής παραγωγικότητας, με τη χρήση συστημάτων εξειδικευμένων επιταχυντών υλικού σε ετερογενή συστήματα-σε-ψηφίδα καθώς και δίκτυα-σε-ψηφίδα. Παρουσιάζεται κατάλληλη μεθοδολογία συν-σχεδίασης των επιταχυντών υλικού και του λογισμικού προκειμένου να αποφασισθεί η κατανομή των εργασιών στους διαθέσιμους πόρους του συστήματος/δικτύου. Το μεθοδολογικό πλαίσιο προβλέπει την υλοποίηση των επιταχυντών είτε με συμβατικές μεθόδους προγραμματισμού σε γλώσσα περιγραφής υλικού είτε με αφαιρετικό προγραμματιστικό μοντέλο με τη χρήση τεχνικών υψηλού επιπέδου σύνθεσης. Σε κάθε περίπτωση, δίδεται η δυνατότητα στο σχεδιαστή για βελτιστοποίηση συστημικών μετρικών, όπως η ταχύτητα επεξεργασίας, η ρυθμαπόδοση, η αξιοπιστία, η κατανάλωση ενέργειας και η επιφάνεια πυριτίου του σχεδιασμού. Τέλος, προκειμένου να αντιμετωπισθεί η αυξημένη πολυπλοκότητα στα σχεδιαστικά εργαλεία επαναδιαμορφούμενων συστημάτων, προτείνονται νέοι εξελικτικοί αλγόριθμοι πολυκριτηριακής βελτιστοποίησης, οι οποίοι εκμεταλλευόμενοι τους σύγχρονους πολυπύρηνους επεξεργαστές και την αδρομερή φύση των πολυνηματικών περιβαλλόντων προγραμματισμού (π.χ. OpenMP), μειώνουν το χρόνο επίλυσης του προβλήματος της τοποθέτησης των λογικών πόρων σε φυσικούς,ενώ ταυτόχρονα, ομαδοποιώντας τις εφαρμογές βάση των εγγενών χαρακτηριστικών τους, διερευνούν αποτελεσματικότερα το χώρο σχεδίασης.Η αποδοτικότητά των προτεινόμενων αρχιτεκτονικών προτύπων και μεθοδολογιών επαληθεύτηκε σε σχέση με τις υφιστάμενες λύσεις αιχμής τόσο σε αυτοτελής εφαρμογές, όπως η ψηφιακή επεξεργασία σήματος, τα πολυμέσα και τα προβλήματα αριθμητικής πολυπλοκότητας, καθώς και σε συστημικά ετερογενή περιβάλλοντα, όπως ένα σύστημα όρασης υπολογιστών για αυτόνομα διαστημικά ρομποτικά οχήματα και ένα σύστημα πολλαπλών επιταχυντών υλικού για σταθμούς εργασίας και κέντρα δεδομένων, στοχεύοντας εφαρμογές υψηλής υπολογιστικής απόδοσης (HPC). Τα αποτελέσματα ενισχύουν την πεποίθηση του γράφοντα, ότι η παρούσα διατριβή παρέχει ανταγωνιστική τεχνογνωσία για την αντιμετώπιση των πολύπλοκων σύγχρονων και προβλεπόμενα μελλοντικών σχεδιαστικών προκλήσεων

Evaluation of STT-MRAM main memory for HPC and real-time systems

It is questionable whether DRAM will continue to scale and will meet the needs of next-generation systems. Therefore, significant effort is invested in research and development of novel memory technologies. One of the candidates for nextgeneration memory is Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM). STT-MRAM is an emerging non-volatile memory with a lot of potential that could be exploited for various requirements of different computing systems. Being a novel technology, STT-MRAM devices are already approaching DRAM in terms of capacity, frequency and device size. Special STT-MRAM features such as intrinsic radiation hardness, non-volatility, zero stand-by power and capability to function in extreme temperatures also make it particularly suitable for aerospace, avionics and automotive applications. Despite of being a conceivable alternative for main memory technology, to this day, academic research of STT-MRAM main memory remains marginal. This is mainly due to the unavailability of publicly available detailed timing parameters of this novel technology, which are required to perform a cycle accurate main memory simulation. Some researchers adopt simplistic memory models to simulate main memory, but such models can introduce significant errors in the analysis of the overall system performance. Therefore, detailed timing parameters are a must-have for any evaluation or architecture exploration study of STT-MRAM main memory. These detailed parameters are not publicly available because STT-MRAM manufacturers are reluctant to release any delicate information on the technology. This thesis demonstrates an approach to perform a cycle accurate simulation of STT-MRAM main memory, being the first to release detailed timing parameters of this technology from academia, essentially enabling researchers to conduct reliable system level simulation of STT-MRAM using widely accepted existing simulation infrastructure. Our results show that, in HPC domain STT-MRAM provide performance comparable to DRAM. Results from the power estimation indicates that STT-MRAM power consumption increases significantly for Activation/Precharge power while Burst power increases moderately and Background power does not deviate much from DRAM. The thesis includes detailed STT-MRAM main memory timing parameters to the main repositories of DramSim2 and Ramulator, two of the most widely used and accepted state-of-the-art main memory simulators. The STT-MRAM timing parameters that has been originated as a part of this thesis, are till date the only reliable and publicly available timing information on this memory technology published from academia. Finally, the thesis analyzes the feasibility of using STT-MRAM in real-time embedded systems by investigating STT-MRAM main memory impact on average system performance and WCET. STT-MRAM's suitability for the real-time embedded systems is validated on benchmarks provided by the European Space Agency (ESA), EEMBC Autobench and MediaBench suite by analyzing performance and WCET impact. In quantitative terms, our results show that STT-MRAM main memory in real-time embedded systems provides performance and WCET comparable to conventional DRAM, while opening up opportunities to exploit various advantages.Es cuestionable si DRAM continuará escalando y cumplirá con las necesidades de los sistemas de la próxima generación. Por lo tanto, se invierte un esfuerzo significativo en la investigación y el desarrollo de nuevas tecnologías de memoria. Uno de los candidatos para la memoria de próxima generación es la Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM). STT-MRAM es una memoria no volátil emergente con un gran potencial que podría ser explotada para diversos requisitos de diferentes sistemas informáticos. Al ser una tecnología novedosa, los dispositivos STT-MRAM ya se están acercando a la DRAM en términos de capacidad, frecuencia y tamaño del dispositivo. Las características especiales de STTMRAM, como la dureza intrínseca a la radiación, la no volatilidad, la potencia de reserva cero y la capacidad de funcionar en temperaturas extremas, también lo hacen especialmente adecuado para aplicaciones aeroespaciales, de aviónica y automotriz. A pesar de ser una alternativa concebible para la tecnología de memoria principal, hasta la fecha, la investigación académica de la memoria principal de STT-MRAM sigue siendo marginal. Esto se debe principalmente a la falta de disponibilidad de los parámetros de tiempo detallados públicamente disponibles de esta nueva tecnología, que se requieren para realizar un ciclo de simulación de memoria principal precisa. Algunos investigadores adoptan modelos de memoria simplistas para simular la memoria principal, pero tales modelos pueden introducir errores significativos en el análisis del rendimiento general del sistema. Por lo tanto, los parámetros de tiempo detallados son indispensables para cualquier evaluación o estudio de exploración de la arquitectura de la memoria principal de STT-MRAM. Estos parámetros detallados no están disponibles públicamente porque los fabricantes de STT-MRAM son reacios a divulgar información delicada sobre la tecnología. Esta tesis demuestra un enfoque para realizar un ciclo de simulación precisa de la memoria principal de STT-MRAM, siendo el primero en lanzar parámetros de tiempo detallados de esta tecnología desde la academia, lo que esencialmente permite a los investigadores realizar una simulación confiable a nivel de sistema de STT-MRAM utilizando una simulación existente ampliamente aceptada infraestructura. Nuestros resultados muestran que, en el dominio HPC, STT-MRAM proporciona un rendimiento comparable al de la DRAM. Los resultados de la estimación de potencia indican que el consumo de potencia de STT-MRAM aumenta significativamente para la activation/Precharge power, mientras que la Burst power aumenta moderadamente y la Background power no se desvía mucho de la DRAM. La tesis incluye parámetros detallados de temporización memoria principal de STT-MRAM a los repositorios principales de DramSim2 y Ramulator, dos de los simuladores de memoria principal más avanzados y más utilizados y aceptados. Los parámetros de tiempo de STT-MRAM que se han originado como parte de esta tesis, son hasta la fecha la única información de tiempo confiable y disponible al público sobre esta tecnología de memoria publicada desde la academia. Finalmente, la tesis analiza la viabilidad de usar STT-MRAM en real-time embedded systems mediante la investigación del impacto de la memoria principal de STT-MRAM en el rendimiento promedio del sistema y WCET. La idoneidad de STTMRAM para los real-time embedded systems se valida en los applicaciones proporcionados por la European Space Agency (ESA), EEMBC Autobench y MediaBench, al analizar el rendimiento y el impacto de WCET. En términos cuantitativos, nuestros resultados muestran que la memoria principal de STT-MRAM en real-time embedded systems proporciona un desempeño WCET comparable al de una memoria DRAM convencional, al tiempo que abre oportunidades para explotar varias ventajas

The Design Space of Ultra-low Energy Asymmetric Cryptography

The energy cost of asymmetric cryptography, a vital component of modern secure communications, inhibits its wide spread adoption within the ultra-low energy regimes such as Implantable Medical Devices (IMDs), Wireless Sensor Networks (WSNs), and Radio Frequency Identification tags (RFIDs). In literature, a plethora of hardware and software acceleration techniques exists for improving the performance of asymmetric cryptography. However, very little attention has been focused on the energy efficiency. Therefore, in this dissertation, I explore the design space thoroughly, evaluating proposed hardware acceleration techniques in terms of energy cost and showing how effective they are at reducing the energy per cryptographic operation. To do so, I estimate the energy consumption for six different hardware/software configurations across five levels of security, including both GF(p) and GF(2^m) computation. First, we design and evaluate an efficient baseline architecture for pure software-based cryptography, which is centered around a pipelined RISC processor with 256KB of program ROM and 16KB of RAM. Then, we augment our processor design with simple, yet beneficial instruction set extensions for GF(p) computation and evaluate the improvement in terms of energy per cryptographic operation compared to the baseline microarchitecture. While examining the energy breakdown of the system, it became clear that fetching instructions from program memory was contributing significantly to the overall energy consumption. Thus, we implement a parameterizable instruction cache and simulate various configurations. We determine that for our working set, the energy-optimal instruction cache is 4KB, providing a 25% energy improvement over the baseline architecture for a 192-bit key-size. Next, we introduce a reconfigurable GF(p) accelerator to our microarchitecture and mea sure the energy per operation against the baseline and the ISA extensions. For ISA extensions, we show between 1.32 and 1.45 factor improvement in energy efficiency over baseline, while for full acceleration we demonstrate a 5.17 to 6.34 factor improvement. Continuing towards greater efficiency, we investigate the energy efficiency of different arithmetic by first adding GF(2^m) instruction set extensions to our processor architecture and comparing them to their GF(p) counterpart. Finally, we design a non-configurable 163-bit GF(2^m) accelerator and perform some initial energy estimates, comparing them with our prior work. In the end, we discuss our ongoing research and make suggestions for future work. The work presented here, along with proposed future work, will aid in bringing asymmetric cryptography within reach of ultra-low energy devices

Ultra-low-power SRAM design in high variability advanced CMOS

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.Cataloged from PDF version of thesis.Includes bibliographical references (p. 163-181).Embedded SRAMs are a critical component in modern digital systems, and their role is preferentially increasing. As a result, SRAMs strongly impact the overall power, performance, and area, and, in order to manage these severely constrained trade-offs, they must be specially designed for target applications. Highly energy-constrained systems (e.g. implantable biomedical devices, multimedia handsets, etc.) are an important class of applications driving ultra-low-power SRAMs. This thesis analyzes the energy of an SRAM sub-array. Since supply- and threshold-voltage have a strong effect, targets for these are established in order to optimize energy. Despite the heavy emphasis on leakage-energy, analysis of a high-density 256x256 sub-array in 45nm LP CMOS points to two necessary optimizations: (1) aggressive supply-voltage reduction (in addition to Vt elevation), and (2) performance enhancement. Important SRAM metrics, including read/write/hold-margin and read-current, are also investigated to identify trade-offs of these optimizations. Based on the need to lower supply-voltage, a 0.35V 256kb SRAM is demonstrated in 65nm LP CMOS. It uses an 8T bit-cell with peripheral circuit-assists to improve write-margin and bit-line leakage. Additionally, redundancy, to manage the increasing impact of variability in the periphery, is proposed to improve the area-offset trade-off of sense-amplifiers, demonstrating promise for highly advanced technology nodes. Based on the need to improve performance, which is limited by density constraints, a 64kb SRAM, using an offset-compensating sense-amplifier, is demonstrated in 45nm LP CMOS with high-density 0.25[mu]m2 bit-cells.(cont.) The sense-amplifier is regenerative, but non -strobed, overcoming timing uncertainties limiting performance, and it is single-ended, for compatibility with 8T cells. Compared to a conventional strobed sense-amplifier, it achieves 34% improvement in worst-case access-time and 4x improvement in the standard deviation of the access-time.by Naveen Verma.Ph.D