A survey of carbon nanotube interconnects for energy efficient integrated circuits

This article is a review of the state-of-art carbon nanotube interconnects for Silicon application with respect to the recent literature. Amongst all the research on carbon nanotube interconnects, those discussed here cover 1) challenges with current copper interconnects, 2) process & growth of carbon nanotube interconnects compatible with back-end-of-line integration, and 3) modeling and simulation for circuit-level benchmarking and performance prediction. The focus is on the evolution of carbon nanotube interconnects from the process, theoretical modeling, and experimental characterization to on-chip interconnect applications. We provide an overview of the current advancements on carbon nanotube interconnects and also regarding the prospects for designing energy efficient integrated circuits. Each selected category is presented in an accessible manner aiming to serve as a survey and informative cornerstone on carbon nanotube interconnects relevant to students and scientists belonging to a range of fields from physics, processing to circuit design

Scaling and process effect on electromigration reliability for Cu/low k interconnects

textThe microelectronics industry has been managing the RC delay problem arising from aggressive line scaling, by replacing aluminum (Al) by copper (Cu) and oxide dielectric by low-k dielectric. Electromigration (EM) turned out to be a serious reliability problem for Cu interconnects due to the implementation of mechanically weaker low-k dielectrics. In addition, line width and via size scaling resulted in the need of a novel diffusion barrier, which should be uniform and thin. The objective of this dissertation is to investigate the impacts of Ta barrier process, such as barrier-first and pre-clean first, and scaling of barrier and line/via on EM reliability of Cu/low-k interconnects. For this purpose, EM statistical test structures, having different number of line segments, line width, and via width, were designed. The EM test structures were fabricated by a dualdamascene process with two metal layers (M1/Via/M2), which were then packaged for EM tests. The package-level EM tests were performed in a specially designed vacuum chamber with pure nitrogen environment. The novel barrier deposition process, called barrier-first, showed a higher (jL)[subscript c] product and prolonged EM lifetime, compared with the conventional Ta barrier deposition process, known as pre-clean first. This can be attributed to the improved uniformity and thickness of the Ta layer on the via and trench, as confirmed by TEM. As for the barrier thickness effect, the (jL)c product decreased with decreasing thickness, due to reduced Cu confinement. A direct correlation between via size and EM reliability was found; namely, EM lifetime and statistics degraded with via size. This can be attributed to the fact that critical void length to cause open circuit is about the size of via width. To investigate further line scaling effect on EM reliability, SiON (siliconoxynitride) trenchfilling process was introduced to fabricate 60-nm lines, corresponding to 45-nm technology, using a conventional, wider line lithograph technology. The EM lifetime of 60-nm fine lines with SiON filling was longer than that of a standard damascene structure, which can be attributed to a distinct via/metal-1 configuration in reducing process-induced defects at the via/metal-1 interface.Materials Science and Engineerin

Effects of scaling on microstructure evolution of Cu nanolines and impact on electromigration reliability

textScaling can significantly degrade the electromigration (EM) lifetime for Cu interconnects, raising serious reliability concerns. Different methods have emerged to enhance the EM resistance of Cu by suppressing the interface diffusion (the historically fastest diffusion path), notably using CoWP metal cap and Mn alloying. With further scaling of Cu interconnects, EM reliability becomes increasingly complex due to changes in Cu microstructure. In ultra-fine Cu lines a large population of small grains mix with bamboo-type grains, resulting in an additional contribution of grain boundary diffusion to EM degradation. With the interface diffusion suppressed by CoWP or Mn alloying, the grain structure effect becomes even more important. The objective of this study is to investigate the EM reliability of ultra-fine Cu interconnects, focusing on the scaling effect on grain structure and mass transport. First, the detailed microstructure information of Cu interconnects down to the 22 nm node was analyzed using a transmission electron microscope (TEM)-based high resolution diffraction technique. A dominant sidewall growth of {111} grains was observed for 70 nm Cu lines (45 nm node), reflecting the importance of interfacial energy in controlling grain growth. The strength of the {111} texture was found to significantly increase as line width was reduced to 40 nm (22 nm node), while the length fraction of coherent twin boundaries was reduced to ~1%. Secondly, the results from microstructure together with the deduced interfacial and grain boundary diffusivities were used to identify flux divergent sites for void formation and to analyze the grain structure effect on EM statistics using a microstructure-based kinetic model. Finally, based on the analysis of Cu grain structure evolution with downscaling, the scaling behavior of EM drift velocity was investigated for Cu interconnects with CoWP capping and Mn alloying. This enables us to project the EM lifetime and statistics for future technology nodes. The Mn alloying effect on mass transport in combination of grain structure control was found to provide an effective means to improve EM reliability especially with further scaling. In summary, this study establishes a correlation between the microstructure of Cu nanolines, void formation kinetics, and EM statistics.Mechanical Engineerin

Copper Metal for Semiconductor Interconnects

Resistance-capacitance (RC) delay produced by the interconnects limits the speed of the integrated circuits from 0.25 mm technology node. Copper (Cu) had been used to replace aluminum (Al) as an interconnecting conductor in order to reduce the resistance. In this chapter, the deposition method of Cu films and the interconnect fabrication with Cu metallization are introduced. The resulting integration and reliability challenges are addressed as well

Study of initial void formation and electron wind force for scaling effects on electromigration in Cu interconnects

textThe continuing scaling of integrated circuits beyond 22nm technology node poses increasing challenges to Electromigration (EM) reliability for Cu on-chip interconnects. First, the width of Cu lines in advanced technology nodes is less than the electron mean free path which is 39nm in Cu at room temperature. This is a new size regime where any new scaling effect on EM is of basic interest. And second, the reduced line width necessitates the development of new methods to analyze the EM characteristics. Such studies will require the development of well controlled processes to fabricate suitable test structures for EM study and model verification. This dissertation is to address these critical issues for EM in Cu interconnects. The dissertation first studies the initial void growth under EM, which is critical for measurement of the EM lifetime and statistics. A method based on analyzing the resistance traces obtained from EM tests of multi-link structures has been developed. The results indicated that there are three stages in the resistance traces where the rate of the initial void growth in Stage I is lower than that in Stage III after interconnect failure and they are linearly correlated. An analysis extending the Korhonen model has been formulated to account for the initial void formation. In this analysis, the stress evolution in the line during void growth under EM was analyzed in two regions and an analytic solution was deduced for the void growth rate. A Monte Carlo grain growth simulation based on the Potts model was performed to obtain grain structures for void growth analysis. The results from this analysis agreed reasonably well with the EM experiments. The next part of the dissertation is to study the size effect on the electron wind force for a thin film and for a line with a rectangular cross section. The electron wind force was modeled by considering the momentum transfer during collision between electrons and an atom. The scaling effect on the electron wind force was found to be represented by a size factor depending on the film/line dimensions. In general, the electron wind force is enhanced with increasing dimensional confinement. Finally, a process for fabrication of Si nanotrenches was developed for deposition of Cu nanolines with well-defined profiles. A self-aligned sub-lithographic mask technique was developed using polymer residues formed on Si surfaces during reactive ion etching of Si dioxide in a fluorocarbon plasma. This method was capable to fabricate ultra-narrow Si nanotrenches down to 20nm range with rectangular profiles and smooth sidewalls, which are ideal for studying EM damage mechanisms and model verification for future technology nodes.Physic

MICROSTRUCTURAL CHARACTERIZATION AND THERMAL CYCLING RELIABILITY OF SOLDERS UNDER ISOTHERMAL AGING AND ELECTRICAL CURRENT

Solder joints on printed circuit boards provide electrical and mechanical connections between electronic devices and metallized patterns on boards. These solder joints are often the cause of failure in electronic packages. Solders age under storage and operational life conditions, which can include temperature, mechanical loads, and electrical current. Aging occurring at a constant temperature is called isothermal aging. Isothermal aging leads to coarsening of the bulk microstructure and increased interfacial intermetallic compounds at the solder-pad interface. The coarsening of the solder bulk degrades the creep properties of solders, whereas the voiding and brittleness of interfacial intermetallic compounds leads to mechanical weakness of the solder joint. Industry guidelines on solder interconnect reliability test methods recommend preconditioning the solder assemblies by isothermal aging before conducting reliability tests. The guidelines assume that isothermal aging simulates a "reasonable use period," but do not relate the isothermal aging levels with specific use conditions. Studies on the effect of isothermal aging on the thermal cycling reliability of tin-lead and tin-silver-copper solders are limited in scope, and results have been contradictory. The effect of electrical current on solder joints has been has mostly focused on current densities above 104A/cm2 with high ambient temperature (≥100oC), where electromigration, thermomigration, and Joule heating are the dominant failure mechanisms. The effect of current density below 104A/cm2 on temperature cycling fatigue of solders has not been established. This research provides the relation between isothermal aging and the thermal cycling reliability of select Sn-based solders. The Sn-based solders with 3%, 1%, and 0% silver content that have replaced tin-lead are studied and compared against tin-lead solder. The activation energy and growth exponents of the Arrhenius model for the intermetallic growth in the solders are provided. An aging metric to quantify the aging of solder joints, in terms of phase size in the solder bulk and interfacial intermetallic compound thickness at the solder-pad interface, is established. Based on the findings of thermal cycling tests on aged solder assemblies, recommendations are made for isothermal aging of solders before thermal cycling tests. Additionally, the effect of active electrical current at 103 A/cm2 on thermal cycling reliability is reported

Effects of electrical, thermal and thermal gradient stress on reliability of metal interconnects

This thesis focuses on the reliability modeling of metal interconnects under time-dependent stress. Whereas most existing reliability models are based upon the assumption that stress is constant throughout the useful life of a system, this thesis considers the more general and more realistic situation where the stress is time-dependent. In this work the stress is defined by temperature and current density variables. It is assumed that the Cumulative Density Function (CDF) is characterized by a single stress parameter that incorporates all stress-dependent variables. A closed-form expression that can be used to calculate the CDF under time-varying stress is presented and this can be used to determine the corresponding Median Time to Failure (MTF). A single parameter which can be represented as a real number is used to incorporate the total effects of the stress history making this approach applicable for dynamic power/thermal management algorithms. A reliability model that includes the effects of thermal gradient stress in the presence of temperature and current stress is also introduced. With these models, temperature measurement accuracy requirements are developed that are necessary if power/thermal management circuits are to be successful in achieving 10% accuracy in the MTF. Incorporation of a time-dependent stress model that incorporates the user-dependent electrical and thermal stress history in the power/thermal management module of a large integrated circuit offers potential for significantly improving system performance while maintaining a target reliability throughout the operating life of the integrated circuit or for improving the reliability when operated at a user-determined stress level