Non-gyrator type active inductors

Modern CMOS radio frequency (RF) Receivers have enabled efficient and increasing applications. The main requirement is to have system in a single chip, in order to minimize area and cost. For the purpose it is required the development of inductorless circuits for the key blocks of an RF receiver. Examples of this key blocks are RC oscillators, RF band pass filters, and Low Noise Amplifiers. The present dissertation presents an inductorless wideband MOSFET-only RF Non-Gyrator Type of Active Inductors with low area, low cost, and very low power, capable of covering the whole WMTS, and ISM, band and intended for biomedical applications. The proposed circuit is based on a floating capacitor connected between two controlled current sources. The first current source, which is controlled by the circuit input voltage, has two objectives: supply current to the capacitor (2) and develop a voltage with 90º degrees in regard to the first current. The capacitor controls the second current source. The addition of one transistor compensates the capacitive parcel of the input current, in order to become purely inductive. This model, based on Active Inductors (AI) takes advantage of the 130 MOS technology to optimize the control of the quality factor. In this sense, the proposed AIs can behave as a parallel RLC Oscillator, and examples of realizations for 662 MHz to 4.1 GHz range are given. A 1.2 V power source, supply the circuit with 56.4 W at the maximum oscillation frequency. With this results, it is possible to confirm the proposed objectives, in order to have a functional Active Inductor as a key block in RF transceivers

Reconfigurable Receiver Front-Ends for Advanced Telecommunication Technologies

The exponential growth of converging technologies, including augmented reality, autonomous vehicles, machine-to-machine and machine-to-human interactions, biomedical and environmental sensory systems, and artificial intelligence, is driving the need for robust infrastructural systems capable of handling vast data volumes between end users and service providers. This demand has prompted a significant evolution in wireless communication, with 5G and subsequent generations requiring exponentially improved spectral and energy efficiency compared to their predecessors. Achieving this entails intricate strategies such as advanced digital modulations, broader channel bandwidths, complex spectrum sharing, and carrier aggregation scenarios. A particularly challenging aspect arises in the form of non-contiguous aggregation of up to six carrier components across the frequency range 1 (FR1). This necessitates receiver front-ends to effectively reject out-of-band (OOB) interferences while maintaining high-performance in-band (IB) operation. Reconfigurability becomes pivotal in such dynamic environments, where frequency resource allocation, signal strength, and interference levels continuously change. Software-defined radios (SDRs) and cognitive radios (CRs) emerge as solutions, with direct RF-sampling receivers offering a suitable architecture in which the frequency translation is entirely performed in digital domain to avoid analog mixing issues. Moreover, direct RF- sampling receivers facilitate spectrum observation, which is crucial to identify free zones, and detect interferences. Acoustic and distributed filters offer impressive dynamic range and sharp roll off characteristics, but their bulkiness and lack of electronic adjustment capabilities limit their practicality. Active filters, on the other hand, present opportunities for integration in advanced CMOS technology, addressing size constraints and providing versatile programmability. However, concerns about power consumption, noise generation, and linearity in active filters require careful consideration.This thesis primarily focuses on the design and implementation of a low-voltage, low-power RFFE tailored for direct sampling receivers in 5G FR1 applications. The RFFE consists of a balun low-noise amplifier (LNA), a Q-enhanced filter, and a programmable gain amplifier (PGA). The balun-LNA employs noise cancellation, current reuse, and gm boosting for wideband gain and input impedance matching. Leveraging FD-SOI technology allows for programmable gain and linearity via body biasing. The LNA's operational state ranges between high-performance and high-tolerance modes, which are apt for sensitivityand blocking tests, respectively. The Q-enhanced filter adopts noise-cancelling, current-reuse, and programmable Gm-cells to realize a fourth-order response using two resonators. The fourth-order filter response is achieved by subtracting the individual response of these resonators. Compared to cascaded and magnetically coupled fourth-order filters, this technique maintains the large dynamic range of second-order resonators. Fabricated in 22-nm FD-SOI technology, the RFFE achieves 1%-40% fractional bandwidth (FBW) adjustability from 1.7 GHz to 6.4 GHz, 4.6 dB noise figure (NF) and an OOB third-order intermodulation intercept point (IIP3) of 22 dBm. Furthermore, concerning the implementation uncertainties and potential variations of temperature and supply voltage, design margins have been considered and a hybrid calibration scheme is introduced. A combination of on-chip and off-chip calibration based on noise response is employed to effectively adjust the quality factors, Gm-cells, and resonance frequencies, ensuring desired bandpass response. To optimize and accelerate the calibration process, a reinforcement learning (RL) agent is used.Anticipating future trends, the concept of the Q-enhanced filter extends to a multiple-mode filter for 6G upper mid-band applications. Covering the frequency range from 8 to 20 GHz, this RFFE can be configured as a fourth-order dual-band filter, two bandpass filters (BPFs) with an OOB notch, or a BPF with an IB notch. In cognitive radios, the filter’s transmission zeros can be positioned with respect to the carrier frequencies of interfering signals to yield over 50 dB blocker rejection

Survey on individual components for a 5 GHz receiver system using 130 nm CMOS technology

La intención de esta tesis es recopilar información desde un punto de vista general sobre los diferentes tipos de componentes utilizados en un receptor de señales a 5 GHz utilizando tecnología CMOS. Se ha realizado una descripción y análisis de cada uno de los componentes que forman el sistema, destacando diferentes tipos de configuraciones, figuras de mérito y otros parámetros. Se muestra una tabla resumen al final de cada sección, comparando algunos diseños que se han ido presentando a lo largo de los años en conferencias internacionales de la IEEE.The intention of this thesis is to gather information from an overview point about the different types of components used in a 5 GHz receiver using CMOS technology. A review of each of the components that form the system has been made, highlighting different types of configurations, figure of merits and parameters. A summary table is shown at the end of each section, comparing many designs that have been presented over the years at international conferences of the IEEE.Departamento de Ingeniería Energética y FluidomecánicaGrado en Ingeniería en Electrónica Industrial y Automátic

Design of a low-voltage CMOS RF receiver for energy harvesting sensor node

In this thesis a CMOS low-power and low-voltage RF receiver front-end is presented. The main objective is to design this RF receiver so that it can be powered by a piezoelectric energy harvesting power source, included in a Wireless Sensor Node application. For this type of applications the major requirements are: the low-power and low-voltage operation, the reduced area and cost and the simplicity of the architecture. The system key blocks are the LNA and the mixer, which are studied and optimized with greater detail, achieving a good linearity, a wideband operation and a reduced introduction of noise. A wideband balun LNA with noise and distortion cancelling is designed to work at a 0.6 V supply voltage, in conjunction with a double-balanced passive mixer and subsequent TIA block. The passive mixer operates in current mode, allowing a minimal introduction of voltage noise and a good linearity. The receiver analog front-end has a total voltage conversion gain of 31.5 dB, a 0.1 - 4.3 GHz bandwidth, an IIP3 value of -1.35 dBm, and a noise figure lower than 9 dB. The total power consumption is 1.9 mW and the die area is 305x134.5 m2, using a standard 130 nm CMOS technology

Architectures and Circuit Techniques for High-Performance Field-Programmable CMOS Software Defined Radios

Next-generation wireless communication systems put more stringent performance requirements on the wireless RF receiver circuits. Sensitivity, linearity, bandwidth and power consumption are some of the most important specifications that often face tightly coupled tradeoffs between them. To increase the data throughput, a large number of fragmented spectrums are being introduced to the wireless communication standards. Carrier aggregation technology needs concurrent communication across several non-contiguous frequency bands, which results in a rapidly growing number of band combinations. Supporting all the frequency bands and their aggregation combinations increases the complexity of the RF receivers. Highly flexible software defined radio (SDR) is a promising technology to address these applications scenarios with lower complexity by relaxing the specifications of the RF filters or eliminating them. However, there are still many technology challenges with both the receiver architecture and the circuit implementations. The performance requirements of the receivers can also vary across different application scenario and RF environments. Field-programmable dynamic performance tradeoff can potentially reduce the power consumption of the receiver. In this dissertation, we address the performance enhancement challenges in the wideband SDRs by innovations at both the circuit building block level and the receiver architecture level. A series of research projects are conducted to push the state-of-the-art performance envelope and add features such as field-programmable performance tradeoff and concurrent reception. The projects originate from the concept of thermal noise canceling techniques and further enhance the RF performance and add features for more capable SDR receivers. Four generations of prototype LNA or receiver chips are designed, and each of them pushes at least one aspect of the RF performance such as bandwidth, linearity, and NF. A noise-canceling distributed LNA breaks the tradeoff between NF and RF bandwidth by introducing microwave circuit techniques from the distributed amplifiers. The LNA architecture uniquely provides ultra high bandwidth and low NF at low frequencies. A family of field-programmable LNA realized field-programmable performance tradeoff with current-reuse programmable transconductance cells. Interferer-reflecting loops can be applied around the LNAs to improve their input linearity by rejecting the out-of-band interferers with a wideband low in- put impedance. A low noise transconductance amplifier (LNTA) that operates in class-AB-C is invented to can handle rail-to-rail out-of-band blocker without saturation. Class-AB and class-C transconductors form a composite amplifier to increase the linear range of the input voltage. A new antenna interface named frequency-translational quadrature-hybrid (FTQH) breaks the input impedance matching requirement of the LNAs by introducing quadrature hybrid couplers to the CMOS RFIC design. The FTQH receiver achieves wideband sub-1dB NF and supports scalable massive frequency-agile concurrent reception

Power-efficient current-mode analog circuits for highly integrated ultra low power wireless transceivers

In this thesis, current-mode low-voltage and low-power techniques have been applied to implement novel analog circuits for zero-IF receiver backend design, focusing on amplification, filtering and detection stages. The structure of the thesis follows a bottom-up scheme: basic techniques at device level for low voltage low power operation are proposed in the first place, followed by novel circuit topologies at cell level, and finally the achievement of new designs at system level. At device level the main contribution of this work is the employment of Floating-Gate (FG) and Quasi-Floating-Gate (QFG) transistors in order to reduce the power consumption. New current-mode basic topologies are proposed at cell level: current mirrors and current conveyors. Different topologies for low-power or high performance operation are shown, being these circuits the base for the system level designs. At system level, novel current-mode amplification, filtering and detection stages using the former mentioned basic cells are proposed. The presented current-mode filter makes use of companding techniques to achieve high dynamic range and very low power consumption with for a very wide tuning range. The amplification stage avoids gain bandwidth product achieving a constant bandwidth for different gain configurations using a non-linear active feedback network, which also makes possible to tune the bandwidth. Finally, the proposed current zero-crossing detector represents a very power efficient mixed signal detector for phase modulations. All these designs contribute to the design of very low power compact Zero-IF wireless receivers. The proposed circuits have been fabricated using a 0.5μm double-poly n-well CMOS technology, and the corresponding measurement results are provided and analyzed to validate their operation. On top of that, theoretical analysis has been done to fully explore the potential of the resulting circuits and systems in the scenario of low-power low-voltage applications.Programa Oficial de Doctorado en Tecnologías de las Comunicaciones (RD 1393/2007)Komunikazioen Teknologietako Doktoretza Programa Ofiziala (ED 1393/2007

Low Power Memory/Memristor Devices and Systems

This reprint focusses on achieving low-power computation using memristive devices. The topic was designed as a convenient reference point: it contains a mix of techniques starting from the fundamental manufacturing of memristive devices all the way to applications such as physically unclonable functions, and also covers perspectives on, e.g., in-memory computing, which is inextricably linked with emerging memory devices such as memristors. Finally, the reprint contains a few articles representing how other communities (from typical CMOS design to photonics) are fighting on their own fronts in the quest towards low-power computation, as a comparison with the memristor literature. We hope that readers will enjoy discovering the articles within

Parametric analog signal amplification applied to nanoscale cmos wireless digital transceivers

Thesis presented in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the subject of Electrical and Computer Engineering by the Universidade Nova de Lisboa,Faculdade de Ciências e TecnologiaSignal amplification is required in almost every analog electronic system. However noise is also present, thus imposing limits to the overall circuit performance, e.g., on the sensitivity of the radio transceiver. This drawback has triggered a major research on the field, which has been producing several solutions to achieve amplification with minimum added noise. During the Fifties, an interesting out of mainstream path was followed which was based on variable reactance instead of resistance based amplifiers. The principle of these parametric circuits permits to achieve low noise amplifiers since the controlled variations of pure reactance elements is intrinsically noiseless. The amplification is based on a mixing effect which enables energy transfer from an AC pump source to other related signal frequencies. While the first implementations of these type of amplifiers were already available at that time, the discrete-time version only became visible more recently. This discrete-time version is a promising technique since it is well adapted to the mainstream nanoscale CMOS technology. The technique itself is based on the principle of changing the surface potential of the MOS device while maintaining the transistor gate in a floating state. In order words, the voltage amplification is achieved by changing the capacitance value while maintaining the total charge unchanged during an amplification phase. Since a parametric amplifier is not intrinsically dependent on the transconductance of the MOS transistor, it does not directly suffer from the intrinsic transconductance MOS gain issues verified in nanoscale MOS technologies. As a consequence, open-loop and opamp free structures can further emerge with this additional contribution. This thesis is dedicated to the analysis of parametric amplification with special emphasis on the MOS discrete-time implementation. The use of the latter is supported on the presentation of several circuits where the MOS Parametric Amplifier cell is well suited: small gain amplifier, comparator, discrete-time mixer and filter, and ADC. Relatively to the latter, a high speed time-interleaved pipeline ADC prototype is implemented in a,standard 130 nm CMOS digital technology from United Microelectronics Corporation (UMC). The ADC is fully based on parametric MOS amplification which means that one could achieve a compact and MOS-only implementation. Furthermore, any high speed opamp has not been used in the signal path, being all the amplification steps implemented with open-loop parametric MOS amplifiers. To the author’s knowledge, this is first reported pipeline ADC that extensively used the parametric amplification concept.Fundação para a Ciência e Tecnologia through the projects SPEED, LEADER and IMPAC

Design and Characterization of Circuits for Next-Generation Wireless Communications Systems

Demand for wireless data transfer has been increasing rapidly with the rise of smart devices and mobile video streaming. With dozens of wireless applications currently in use and only a finite bandwidth to work with, engineers are challenged to both expand the upward frequency limit of high-performance, high-efficiency wireless systems and to increase the spectral efficiency of the frequency bands already in use. The development of deep sub-um silicon-on-insulator transistor technology and powerful computer-aided circuit designing tools have allowed us to create more affordable silicon-based phased array ICs at frequencies previously achievable by only military applications. The 5th generation of mobile systems (5G) is now expected to use this type of IC to offer increased wireless data capacity in densely-populated areas using mm-wave frequencies. Demand for wireless data is only expected to continue rising, particularly as new IoT applications such as autonomous vehicles become commercially viable.The work presented in this dissertation addresses both the need for expanding the usable frequency spectrum and the need to increase spectral efficiency in available bands. It includes a design for an analog beamforming matrix for a spatially multiplexed phased array receiver in silicon SOI technology, low-power high-linearity w-band amplifiers in InP HBT technology, and ultra-wideband mm-wave power amplifiers in InP HBT technology. Spatially multiplexed phased array transceivers have the potential to greatly increase the spectral efficiency of mm-wave frequency bands by re-using frequency spectrum for many data channels. This type of system can be used to create short-range high-capacity line-of-sight wireless backhaul for crowded city squares or event venues. Mm-wave power amplifiers and high-linearity amplifiers in new 130 nm InP HBT technology represent an IC performance boost which pushes the frequency limits of feasible power-efficient wireless systems. The measured power amplifier ICs produce output power of larger than 16.5 dBm at the 3-dB gain compression condition from 50 GHz to 100 GHz, and a small signal gain of 15 dB over a 90 GHz 3-dB bandwidth. The peak power-added efficiency (PAE) is larger than 8% over that same frequency range. At 90 GHz, the ICs produce 22 dBm of saturated output power and 14.7% PAE. The measured high-linearity amplifier ICs demonstrate an output-referred 3rd order intercept (OIP3) of 22 dBm, a gain of 6.4 dB, and a noise figure below 7 dB at 100 GHz. New designs for an analog MIMO beamforming matrix IC, a 100-165 GHz power amplifier, and an improved w-band high-linearity amplifier are also outlined in this dissertation