Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects

Single Event Effect Hardening Designs in 65nm CMOS Bulk Technology

Radiation from terrestrial and space environments is a great danger to integrated circuits (ICs). A single particle from a radiation environment strikes semiconductor materials resulting in voltage and current perturbation, where errors are induced. This phenomenon is termed a Single Event Effect (SEE). With the shrinking of transistor size, charge sharing between adjacent devices leads to less effectiveness of current radiation hardening methods. Improving fault-tolerance of storage cells and logic gates in advanced technologies becomes urgent and important. A new Single Event Upset (SEU) tolerant latch is proposed based on a previous hardened Quatro design. Soft error analysis tools are used and results show that the critical charge of the proposed design is approximately 2 times higher than that of the reference design with negligible penalty in area, delay, and power consumption. A test chip containing the proposed flip-flop chains was designed and exposed to alpha particles as well as heavy ions. Radiation experimental results indicate that the soft error rates of the proposed design are greatly reduced when Linear Energy Transfer (LET) is lower than 4, which makes it a suitable candidate for ground-level high reliability applications. To improve radiation tolerance of combinational circuits, two combinational logic gates are proposed. One is a layout-based hardening Cascode Voltage Switch Logic (CVSL) and the other is a fault-tolerant differential dynamic logic. Results from a SEE simulation tool indicate that the proposed CVSL has a higher critical charge, less cross section, and shorter Single Event Transient (SET) pulses when compared with reference designs. Simulation results also reveal that the proposed differential dynamic logic significantly reduces the SEU rate compared to traditional dynamic logic, and has a higher critical charge and shorter SET pulses than reference hardened design

Study of Radiation Tolerant Storage Cells for Digital Systems

Single event upsets (SEUs) are a significant reliability issue in semiconductor devices. Fully Depleted Silicon-on-Insulator (FDSOI) technologies have been shown to exhibit better SEU performance compared to bulk technologies. This is attributed to the thin Silicon (Si) layer on top of a Buried Oxide (BOX) layer, which allows each transistor to function as an insulated Si island, thus reducing the threat of charge-sharing. Moreover, the small volume of the Si in FDSOI devices results in a reduction of the amount of charge induced by an ion strike. The effects of Total Ionizing Dose (TID) on integrated circuits (ICs) can lead to changes in gate propagation delays, leakage currents, and device functionality. When IC circuits are exposed to ionizing radiation, positive charges accumulate in the gate oxide and field oxide layers, which results in reduced gate control and increased leakage current. TID effects in bulk technologies are usually simpler due to the presence of only one gate oxide layer, but FDSOI technologies have a more complex response to TID effects because of the additional BOX layer. In this research, we aim to address the challenges of developing cost-effective electronics for space applications by bridging the gap between expensive space-qualified components and high-performance commercial technologies. Key research questions involve exploring various radiation-hardening-by-design (RHBD) techniques and their trade-offs, as well as investigating the feasibility of radiation-hardened microcontrollers. The effectiveness of RHBD techniques in mitigating soft errors is well-established. In our study, a test chip was designed using the 22-nm FDSOI process, incorporating multiple RHBD Flip-Flop (FF) chains alongside a conventional FF chain. Three distinct types of ring oscillators (ROs) and a 256 kbit SRAM was also fabricated in the test chip. To evaluate the SEU and TID performance of these designs, we conducted multiple irradiation experiments with alpha particles, heavy ions, and gamma-rays. Alpha particle irradiation tests were carried out at the University of Saskatchewan using an Americium-241 alpha source. Heavy ion experiments were performed at the Texas A&M University Cyclotron Institute, utilizing Ne, Ar, Cu, and Ag in a 15 MeV/amu cocktail. Lastly, TID experiments were conducted using a Gammacell 220 Co-60 chamber at the University of Saskatchewan. By evaluating the performance of these designs under various irradiation conditions, we strive to advance the development of cost-effective, high-performance electronics suitable for space applications, ultimately demonstrating the significance of this project. When exposed to heavy ions, radiation-hardened FFs demonstrated varying levels of improvement in SEU performance, albeit with added power and timing penalties compared to conventional designs. Stacked-transistor DFF designs showed significant enhancement, while charge-cancelling and interleaving techniques further reduced upsets. Guard-gate (GG) based FF designs provided additional SEU protection, with the DFR-FF and GG-DICE FF designs showing zero upsets under all test conditions. Schmitt-trigger-based DFF designs exhibited improved SEU performance, making them attractive choices for hardening applications. The 22-nm FDSOI process proved more resilient to TID effects than the 28-nm process; however, TID effects remained prominent, with increased leakage current and SRAM block degradation at high doses. These findings offer valuable insights for designers aiming to meet performance and SER specifications for circuits in radiation environments, emphasizing the need for additional attention during the design phase for complex radiation-hardened circuits

Low Power CMOS Design : Exploring Radiation Tolerance in a 90 nm Low Power Commercial Process

This thesis aims to examine radiation tolerance of low power digital CMOS circuits in a commercial 90 nm low power triple-well process from TSMC. By combining supply voltage scaling and Radiation-Hardened By Design (RHBD) design techniques, the goal is to achieve low supply voltage, radiation tolerant, circuit behavior. The target circuit architecture for comparison between different radiation hardening techniques is a Successive Approximation Register (SAR) architecture comprising both combinational and sequential logic. The purpose of the SAR architecture is to emulate a larger system, since larger systems are usually composed of combinational and sequential building blocks. The method used for achieving low power operation is primarily voltage scaling, with the ultimate goal of reaching subthreshold operation, while maintaining radiation tolerant circuit behavior. Radiation hardening is performed on circuit-level by applying RHBD circuit topologies, as well as architectural-level mitigation techniques. This thesis includes three papers within the field of robust low power CMOS design. Two of the papers cover low power level shifter designs in 90 nm and 65 nm process from STMicroelectronics. The third paper examines memory element design using minority-3 gates and inverters for robust low voltage operation. Prototyping has been conducted on low power CMOS building blocks including level shifter and memory design, for potential use in future radiation tolerant designs. Prototyping has been conducted on two chips from two different 90 nm processes from STMicroelectronics and TSMC. A test setup for radiation induced errors has been developed. Experimental radiation tests of the SAR architectures were conducted at SAFE, revealing no radiation induced errors

Low-Power and Error-Resilient VLSI Circuits and Systems.

Efficient low-power operation is critically important for the success of the next-generation signal processing applications. Device and supply voltage have been continuously scaled to meet a more constrained power envelope, but scaling has created resiliency challenges, including increasing timing faults and soft errors. Our research aims at designing low-power and robust circuits and systems for signal processing by drawing circuit, architecture, and algorithm approaches. To gain an insight into the system faults due to supply voltage reduction, we researched the two primary effects that determine the minimum supply voltage (VMIN) in Intel’s tri-gate CMOS technology, namely process variations and gate-dielectric soft breakdown. We determined that voltage scaling increases the timing window that sequential circuits are vulnerable. Thus, we proposed a new hold-time violation metric to define hold-time VMIN, which has been adopted as a new design standard. Device scaling increases soft errors which affect circuit reliability. Through extensive soft error characterization using two 65nm CMOS test chips, we studied the soft error mechanisms and its dependence on supply voltage and clock frequency. This study laid the foundation of the first 65nm DSP chip design for a NASA spaceflight project. To mitigate such random errors, we proposed a new confidence-driven architecture that effectively enhances the error resiliency of deeply scaled CMOS and post-CMOS circuits. Designing low-power resilient systems can effectively leverage application-specific algorithmic approaches. To explore design opportunities in the algorithmic domain, we demonstrate an application-specific detection and decoding processor for multiple-input multiple-output (MIMO) wireless communication. To enhance the receive error rate for a robust wireless communication, we designed a joint detection and decoding technique by enclosing detection and decoding in an iterative loop to enhance both interference cancellation and error reduction. A proof-of-concept chip design was fabricated for the next-generation 4x4 256QAM MIMO systems. Through algorithm-architecture optimizations and low-power circuit techniques, our design achieves significant improvements in throughput, energy efficiency and error rate, paving the way for future developments in this area.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/110323/1/uchchen_1.pd

Cross-Layer Resiliency Modeling and Optimization: A Device to Circuit Approach

The never ending demand for higher performance and lower power consumption pushes the VLSI industry to further scale the technology down. However, further downscaling of technology at nano-scale leads to major challenges. Reduced reliability is one of them, arising from multiple sources e.g. runtime variations, process variation, and transient errors. The objective of this thesis is to tackle unreliability with a cross layer approach from device up to circuit level

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification