LDMOS versus GaN RF power amplifier comparison based on the computing complexity needed to linearize the output

In order to maximize the efficiency of telecommunications equipment, it is necessary that the radio frequency (RF) power amplifier is situated as closely as possible to its compression ¿point. This makes its response nonlinear, and therefore it is necessary to linearize it, in order to minimize the interference that nonlinearities cause outside the useful band (adjacent channel). The system used for this linearization occupies a high percentage of the hardware and software resources of the telecommunication equipment, so it is interesting to minimize its complexity in order to make it as simple as possible. This paper analyzes the differences between the laterally diffused MOSFET (LDMOS) and gallium nitride (GaN) power amplifiers, in terms of their nonlinearity graphs, and in terms of the greater or lesser difficulty of linearization. A correct choice of power amplifier will allow for minimization of the linearization system, greatly simplifying the complexity of the final design

RF Power Amplifier Linearization in Professional Mobile Radio Communications Using Artificial Neural Networks

This paper is focused on the linearization of the radio frequency power amplifier of a professional digital handheld by means of an artificial neural network. The simplicity of the neural network that is used, together with the fact that a feedback path is unnecessary, makes this solution ideal to reduce both the cost of a handheld and its hardware complexity, while fully maintaining its performance. A compensation system is also needed to keep the linearization characteristics of the neural network stable against frequency, temperature, and voltage variations. The whole solution that comprises both the neural network and the compensation system has been implemented in the digital signal processor of a real handheld and afterward fully tested. It has proved to be satisfactory to meet the telecommunication standard requirements in all frequency, temperature, and voltage ranges under consideration while efficient to lower the computational cost of the handheld and to make its internal hardware simpler in comparison with other traditional linearization techniques. The results obtained demonstrate that a neural network can be used to linearize the power amplifiers that are used in transmitters of telecommunication equipment, leading to a significant reduction of both their hardware cost and complexity

Study Of Nanoscale Cmos Device And Circuit Reliability

The development of semiconductor technology has led to the significant scaling of the transistor dimensions -The transistor gate length drops down to tens of nanometers and the gate oxide thickness to 1 nm. In the future several years, the deep submicron devices will dominate the semiconductor industry for the high transistor density and the corresponding performance enhancement. For these devices, the reliability issues are the first concern for the commercialization. The major reliability issues caused by voltage and/or temperature stress are gate oxide breakdown (BD), hot carrier effects (HCs), and negative bias temperature instability (NBTI). They become even more important for the nanoscale CMOS devices, because of the high electrical field due to the small device size and high temperature due to the high transistor densities and high-speed performances. This dissertation focuses on the study of voltage and temperature stress-induced reliability issues in nanoscale CMOS devices and circuits. The physical mechanisms for BD, HCs, and NBTI have been presented. A practical and accurate equivalent circuit model for nanoscale devices was employed to simulate the RF performance degradation in circuit level. The parameter measurement and model extraction have been addressed. Furthermore, a methodology was developed to predict the HC, TDDB, and NBTI effects on the RF circuits with the nanoscale CMOS. It provides guidance for the reliability considerations of the RF circuit design. The BD, HC, and NBTI effects on digital gates and RF building blocks with the nanoscale devices low noise amplifier, oscillator, mixer, and power amplifier, have been investigated systematically. The contributions of this dissertation include: It provides a thorough study of the reliability issues caused by voltage and/or temperature stresses on nanoscale devices from device level to circuit level; The more real voltage stress case high frequency (900 MHz) dynamic stress, has been first explored and compared with the traditional DC stress; A simple and practical analytical method to predict RF performance degradation due to voltage stress in the nanoscale devices and RF circuits was given based on the normalized parameter degradations in device models. It provides a quick way for the designers to evaluate the performance degradations; Measurement and model extraction technologies, special for the nanoscale MOSFETs with ultra-thin, ultra-leaky gate oxide, were addressed and employed for the model establishments; Using the present existing computer-aided design tools (Cadence, Agilent ADS) with the developed models for performance degradation evaluation due to voltage or/and temperature stress by simulations provides a potential way that industry could use to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of nanotechnology, and scientists and engineers have been exploring here for years. The reliability is the first challenge for the commercialization of the nanoscale CMOS devices, which will be further downscaling into several tens or ten nanometers. The reliability is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation, from device level to circuit level, provide not only an insight on how the voltage and/or temperature stress effects on the performances, but also methods and guidance for the designers to achieve more reliable circuits with nanoscale MOSFETs in the future

Development of Robust Analog and Mixed-Signal Circuits in the Presence of Process- Voltage-Temperature Variations

Continued improvements of transceiver systems-on-a-chip play a key role in the advancement of mobile telecommunication products as well as wireless systems in biomedical and remote sensing applications. This dissertation addresses the problems of escalating CMOS process variability and system complexity that diminish the reliability and testability of integrated systems, especially relating to the analog and mixed-signal blocks. The proposed design techniques and circuit-level attributes are aligned with current built-in testing and self-calibration trends for integrated transceivers. In this work, the main focus is on enhancing the performances of analog and mixed-signal blocks with digitally adjustable elements as well as with automatic analog tuning circuits, which are experimentally applied to conventional blocks in the receiver path in order to demonstrate the concepts. The use of digitally controllable elements to compensate for variations is exemplified with two circuits. First, a distortion cancellation method for baseband operational transconductance amplifiers is proposed that enables a third-order intermodulation (IM3) improvement of up to 22dB. Fabricated in a 0.13µm CMOS process with 1.2V supply, a transconductance-capacitor lowpass filter with the linearized amplifiers has a measured IM3 below -70dB (with 0.2V peak-to-peak input signal) and 54.5dB dynamic range over its 195MHz bandwidth. The second circuit is a 3-bit two-step quantizer with adjustable reference levels, which was designed and fabricated in 0.18µm CMOS technology as part of a continuous-time SigmaDelta analog-to-digital converter system. With 5mV resolution at a 400MHz sampling frequency, the quantizer's static power dissipation is 24mW and its die area is 0.4mm^2. An alternative to electrical power detectors is introduced by outlining a strategy for built-in testing of analog circuits with on-chip temperature sensors. Comparisons of an amplifier's measurement results at 1GHz with the measured DC voltage output of an on-chip temperature sensor show that the amplifier's power dissipation can be monitored and its 1-dB compression point can be estimated with less than 1dB error. The sensor has a tunable sensitivity up to 200mV/mW, a power detection range measured up to 16mW, and it occupies a die area of 0.012mm^2 in standard 0.18µm CMOS technology. Finally, an analog calibration technique is discussed to lessen the mismatch between transistors in the differential high-frequency signal path of analog CMOS circuits. The proposed methodology involves auxiliary transistors that sense the existing mismatch as part of a feedback loop for error minimization. It was assessed by performing statistical Monte Carlo simulations of a differential amplifier and a double-balanced mixer designed in CMOS technologies

Analysis and design of low-power data converters

In a large number of applications the signal processing is done exploiting both analog and digital signal processing techniques. In the past digital and analog circuits were made on separate chip in order to limit the interference and other side effects, but the actual trend is to realize the whole elaboration chain on a single System on Chip (SoC). This choice is driven by different reasons such as the reduction of power consumption, less silicon area occupation on the chip and also reliability and repeatability. Commonly a large area in a SoC is occupied by digital circuits, then, usually a CMOS short-channel technological processes optimized to realize digital circuits is chosen to maximize the performance of the Digital Signal Proccessor (DSP). Opposite, the short-channel technology nodes do not represent the best choice for analog circuits. But in a large number of applications, the signals which are treated have analog nature (microphone, speaker, antenna, accelerometers, biopotential, etc.), then the input and output interfaces of the processing chip are analog/mixed-signal conversion circuits. Therefore in a single integrated circuit (IC) both digital and analog circuits can be found. This gives advantages in term of total size, cost and power consumption of the SoC. The specific characteristics of CMOS short-channel processes such as: • Low breakdown voltage (BV) gives a power supply limit (about 1.2 V). • High threshold voltage VTH (compared with the available voltage supply) fixed in order to limit the leakage power consumption in digital applications (of the order of 0.35 / 0.4V), puts a limit on the voltage dynamic, and creates many problems with the stacked topologies. • Threshold voltage dependent on the channel length VTH = f(L) (short channel effects). • Low value of the output resistance of the MOS (r0) and gm limited by speed saturation, both causes contribute to achieving a low intrinsic gain gmr0 = 20 to 26dB. • Mismatch which brings offset effects on analog circuits. make the design of high performance analog circuits very difficult. Realizing lowpower circuits is fundamental in different contexts, and for different reasons: lowering the power dissipation gives the capability to reduce the batteries size in mobile devices (laptops, smartphones, cameras, measuring instruments, etc.), increase the life of remote sensing devices, satellites, space probes, also allows the reduction of the size and weight of the heat sink. The reduction of power dissipation allows the realization of implantable biomedical devices that do not damage biological tissue. For this reason, the analysis and design of low power and high precision analog circuits is important in order to obtain high performance in technological processes that are not optimized for such applications. Different ways can be taken to reduce the effect of the problems related to the technology: • Circuital level: a circuit-level intervention is possible to solve a specific problem of the circuit (i.e. Techniques for bandwidth expansion, increase the gain, power reduction, etc.). • Digital calibration: it is the highest level to intervene, and generally going to correct the non-ideal structure through a digital processing, these aims are based on models of specific errors of the structure. • Definition of new paradigms. This work has focused the attention on a very useful mixed-signal circuit: the pipeline ADC. The pipeline ADCs are widely used for their energy efficiency in high-precision applications where a resolution of about 10-16 bits and sampling rates above hundreds of Mega-samples per second (telecommunication, radar, etc.) are needed. An introduction on the theory of pipeline ADC, its state of the art and the principal non-idealities that affect the energy efficiency and the accuracy of this kind of data converters are reported in Chapter 1. Special consideration is put on low-voltage low-power ADCs. In particular, for ADCs implemented in deep submicron technology nodes side effects called short channel effects exist opposed to older technology nodes where undesired effects are not present. An overview of the short channel effects and their consequences on design, and also power consuption reduction techniques, with particular emphasis on the specific techniques adopted in pipelined ADC are reported in Chapter 2. Moreover, another way may be undertaken to increase the accuracy and the efficiency of an ADC, this way is the digital calibration. In Chapter 3 an overview on digital calibration techniques, and furthermore a new calibration technique based on Volterra kernels are reported. In some specific applications, such as software defined radios or micropower sensor, some circuits should be reconfigurable to be suitable for different radio standard or process signals with different charateristics. One of this building blocks is the ADC that should be able to reconfigure the resolution and conversion frequency. A reconfigurable voltage-scalable ADC pipeline capable to adapt its voltage supply starting from the required conversion frequency was developed, and the results are reported in Chapter 4. In Chapter 5, a pipeline ADC based on a novel paradigm for the feedback loop and its theory is described

RF Amplification and Filtering Techniques for Cellular Receivers

The usage of various wireless standards, such as Bluetooth, Wi-Fi, GPS, and 4G/5G cellular, has been continually increasing. In order to utilize the frequency bands efficiently and to support new communication standards with lower power consumption, lower occupied volume and at reduced costs, multimode transceivers, software defined radios (SDRs), cognitive radios, etc., have been actively investigated. Broadband behavior of a wireless receiver is typically defined by its front-end low-noise amplifier (LNA), whose design must consider trade-offs between input matching, noise figure (NF), gain, bandwidth, linearity, and voltage headroom in a given process technology. Moreover, monolithic RF wireless receivers have been trending toward high intermediatefrequency (IF) or superhetrodyne radios thanks to recent breakthroughs in silicon integration of band-pass channel-select filters. The main motivation is to avoid the common issues in the currently predominant zero/low-IF receivers, such as poor 2nd-order nonlinearity, sensitivity to 1/f (i.e. flicker) noise and time-variant dc offsets, especially in the fine CMOS technology. To avoid interferers and blockers at the susceptible image frequencies that the high-IF entails, band-pass filters (BPF) with high quality (Q) factor components for sharp transfer-function transition characteristics are now required. In addition, integrated low-pass filters (LPF) with strong rejection of out-of-band frequency components are essential building blocks in a variety of applications, such as telecommunications, video signal processing, anti-aliasing filtering, etc. Attention is drawn toward structures featuring low noise, small area, high in-/out-of-band linearity performance, and low-power consumption. This thesis comprises three main parts. In the first part (Chapters 2 and 3), we focus on the design and implementation of several innovative wideband low-noise (transconductance) amplifiers [LN(T)A] for wireless cellular applications. In the first design, we introduce new approaches to reduce the noise figure of the noise-cancellation LNAs without sacrificing the power consumption budget, which leads to NF of 2 dB without adding extra power consumption. The proposed LNAs also have the capability to be used in current-mode receivers, especially in discrete-time receivers, as in the form of low noise transconductance amplifier (LNTA). In the second design, two different two-fold noise cancellation approaches are proposed, which not only improve the noise performance of the design, but also achieve high linearity (IIP3=+4.25 dBm). The proposed LN(T)As are implemented in TSMC 28-nm LP CMOS technology to prove that they are suitable for applications such as sub-6 GHz 5G receivers. The second objective of this dissertation research is to invent a novel method of band-pass filtering, which leads to achieving very sharp and selective band-pass filtering with high linearity and low input referred (IRN) noise (Chapter 4). This technique improves the noise and linearity performance without adding extra clock phases. Hence, the duty cycle of the clock phases stays constant, despite the sophisticated improvements. Moreover, due to its sharp filtering, it can filter out high blockers of near channels and can increase the receiver’s blocker tolerance. With the same total capacitor size and clock duty cycle as in a 1st-order complex charge-sharing band-pass filter (CS BPF), the proposed design achieves 20 dB better out-of-band filtering compared to the prior-art 1st-order CS BPF and 10 dB better out-of-band filtering compared to the conventional 2nd-order C-CS BPF. Finally, the stop-band rejection of the discrete-time infinite-impulse response (IIR) lowpass filter is improved by applying a novel technique to enhance the anti-aliasing filtering (Chapter 5). The aim is to introduce a 4th-order charge rotating (CR) discrete-time (DT) LPF, which achieves the record of stop-band rejection of 120 dB by using a novel pseudolinear interpolation technique while keeping the sampling frequency and the capacitor values constant

Linealización de amplificadores de radiofrecuencia con redes neuronales

Linealización de Amplificadores de Radiofrecuencia con Redes Neuronales:En está tesis doctoral se aborda la linealización de amplificadores de Radiofrecuencia en profundidad.En primer lugar se lleva a cabo una descripción detallada de los diversos sistemas de linealización de amplificadores de radiofrecuencia existentes en la actualidad.Posteriormente se lleva a cabo una minuciosa descripción de la modulación de telecomunicaciones TETRA, sobre la cual va a implementarse el sistema de linealización del amplificador de radiofrecuencia.A continuación se selecciona la tecnología del amplificador de Radiofrecuencia, llevando a cabo un riguroso análisis de las tres tecnologías más importantes (LDMOS, GaN y GaAs) y demostrando las principales ventajas de la solución escogida.Posteriormente, se implementa un sistema de linealización basado en redes neuronales, capaz de linealizar el amplificador de Radiofrecuencia seleccionado, de forma que se cumplan los estándares de telecomunicaciones internacionales para la modulación TETRA y consiguiendo que la complejidad del sistema sea la menor posible, de cara a poder ser implementado empleando los mínimos recursos computacionales y con el menor coste económico posible.Por último se lleva a cabo la implementación física real de la solución completa en un terminal portátil de telecomunicaciones, obteniendo unos excelentes resultados en cuanto a prestaciones y ahorro económico y de recursos computacionales de esta solución respecto a las existentes en el mercado hasta la fecha.<br /

Passive and active circuits in cmos technology for rf, microwave and millimeter wave applications

The permeation of CMOS technology to radio frequencies and beyond has fuelled an urgent need for a diverse array of passive and active circuits that address the challenges of rapidly emerging wireless applications. While traditional analog based design approaches satisfy some applications, the stringent requirements of newly emerging applications cannot necessarily be addressed by existing design ideas and compel designers to pursue alternatives. One such alternative, an amalgamation of microwave and analog design techniques, is pursued in this work. A number of passive and active circuits have been designed using a combination of microwave and analog design techniques. For passives, the most crucial challenge to their CMOS implementation is identified as their large dimensions that are not compatible with CMOS technology. To address this issue, several design techniques – including multi-layered design and slow wave structures – are proposed and demonstrated through experimental results after being suitably tailored for CMOS technology. A number of novel passive structures - including a compact 10 GHz hairpin resonator, a broadband, low loss 25-35 GHz Lange coupler, a 25-35 GHz thin film microstrip (TFMS) ring hybrid, an array of 0.8 nH and 0.4 nH multi-layered high self resonant frequency (SRF) inductors are proposed, designed and experimentally verified. A number of active circuits are also designed and notable experimental results are presented. These include 3-10 GHz and DC-20 GHz distributed low noise amplifiers (LNA), a dual wideband Low noise amplifier and 15 GHz distributed voltage controlled oscillators (DVCO). Distributed amplifiers are identified as particularly effective in the development of wideband receiver front end sub-systems due to their gain flatness, excellent matching and high linearity. The most important challenge to the implementation of distributed amplifiers in CMOS RFICs is identified as the issue of their miniaturization. This problem is solved by using integrated multi-layered inductors instead of transmission lines to achieve over 90% size compression compared to earlier CMOS implementations. Finally, a dual wideband receiver front end sub-system is designed employing the miniaturized distributed amplifier with resonant loads and integrated with a double balanced Gilbert cell mixer to perform dual band operation. The receiver front end measured results show 15 dB conversion gain, and a 1-dB compression point of -4.1 dBm in the centre of band 1 (from 3.1 to 5.0 GHz) and -5.2 dBm in the centre of band 2 (from 5.8 to 8 GHz) with input return loss less than 10 dB throughout the two bands of operation

Broadband Doherty Power Amplifiers with Enhanced Linearity for Emerging Radio Transmitters

The ever-increasing demand for utilizing wireless spectra has led to development of spectrally efficient radio systems. While these systems offer much higher data throughput, they employ more sophisticated modulation schemes, which result in wideband signals with high peak-to-average power ratios. These signal characteristics significantly complicate the design of RF transmitters, particularly power amplifiers, in terms of power efficiency and linearity requirements. Furthermore, upcoming wireless standards, such as long term evolution advanced (LTE-A) require adoption of carrier aggregation which incorporates multiple component carriers to yield aggregated channels of larger bandwidth (up to 100 MHz). On the other hand, the emerging systems are expected to support legacy standards with minimum area, cost, and power overhead, and thus call for highly-efficient linear broadband power amplifiers capable of efficiently amplifying concurrent modulated signals located over a broad carrier frequency range. This thesis focuses on Doherty power amplifiers (DPAs) with extended high-efficiency range, enhanced bandwidth and improved linearity as a solution for high-efficiency multi-band multi-standard transmitters. It addresses three major concerns associated with DPAs, namely, back-off efficiency, bandwidth, and linearity. The Thesis begins with a detailed theoretical analysis of two-way and three-way Doherty configurations from which the governing equations are derived. This is followed by a comprehensive study of bandwidth limitation in DPA variants. As the first contribution, it is shown that the two existing three-way Doherty structures, i.e., conventional and modified DPAs have inherently broadband characteristics and thus are promising solutions for multi-standard base station transmitters. As a proof of concept, a 30-W three-way modified Doherty amplifier was designed and implemented using packaged GaN transistors over 0.73-0.98 GHz. The prototype was successfully linearized under modulated signals with up to 20 MHz modulation bandwidth. To further improve the linearizability of the DPAs under wideband and multi-band modulated signals, this thesis investigates major sources of static and dynamic nonlinearity in two-way DPAs both at device and circuit levels and explores circuit techniques to mitigate them. Furthermore, the challenges of applying the Doherty technique for concurrent transmission of multiple modulated signals are tackled. The most significant contribution of this thesis is to develop a novel waveform engineering approach to designing ultrawideband DPAs. This approach completely reformulates the DPA's output combiner conditions in order to accommodate complex-valued load modulation. Moreover, it relaxes the harmonic termination requirements of the DPAs to further enlarge the Doherty design space, thereby enhancing the bandwidth. A 50-W waveform-engineered two-way DPA prototype was designed for 1.5-2.5 GHz range and was successfully linearized under intra- and inter-band carrier-aggregated signals with up to 600 MHz carrier spacing. Lastly, an input matching network design methodology is proposed for broadband DPAs. This methodology uses the novel concept of ``current contours'' to minimize the bandwidth, efficiency and linearity degradation of DPAs caused by device input non-idealities