Multi-level simulation of nano-electronic digital circuits on GPUs

Simulation of circuits and faults is an essential part in design and test validation tasks of contemporary nano-electronic digital integrated CMOS circuits. Shrinking technology processes with smaller feature sizes and strict performance and reliability requirements demand not only detailed validation of the functional properties of a design, but also accurate validation of non-functional aspects including the timing behavior. However, due to the rising complexity of the circuit behavior and the steady growth of the designs with respect to the transistor count, timing-accurate simulation of current designs requires a lot of computational effort which can only be handled by proper abstraction and a high degree of parallelization. This work presents a simulation model for scalable and accurate timing simulation of digital circuits on data-parallel graphics processing unit (GPU) accelerators. By providing compact modeling and data-structures as well as through exploiting multiple dimensions of parallelism, the simulation model enables not only fast and timing-accurate simulation at logic level, but also massively-parallel simulation with switch level accuracy. The model facilitates extensions for fast and efficient fault simulation of small delay faults at logic level, as well as first-order parametric and parasitic faults at switch level. With the parallelization on GPUs, detailed and scalable simulation is enabled that is applicable even to multi-million gate designs. This way, comprehensive analyses of realistic timing-related faults in presence of process- and parameter variations are enabled for the first time. Additional simulation efficiency is achieved by merging the presented methods in a unified simulation model, that allows to combine the unique advantages of the different levels of abstraction in a mixed-abstraction multi-level simulation flow to reach even higher speedups. Experimental results show that the implemented parallel approach achieves unprecedented simulation throughput as well as high speedup compared to conventional timing simulators. The underlying model scales for multi-million gate designs and gives detailed insights into the timing behavior of digital CMOS circuits, thereby enabling large-scale applications to aid even highly complex design and test validation tasks

Emulating Digital Logic using Transputer Networks (Very High Parallelism = Simplicity = Performance)

Modern VLSI technology has changed the economic rules by which the balance between processing power, memory and communications is decided in computing systems. This will have a profound impact on the design rules for the controlling software. In particular, the criteria for judging efficiency of the algorithms will be somewhat different. This paper explores some of these implications through the development of highly parallel and highly distributable algorithms based on occam and transputer networks. The major results reported are a new simplicity for software designs, a corresponding ability to reason (formally and informally) about their properties, the reusability of their components and some real performance figures which demonstrate their practicality. Some guidelines to assist in these designs are also given. As a vehicle for discussion, an interactive simulator is developed for checking the functional and timing characteristics of digital logic circuits of arbitrary complexity

Analog-digital simulation of transient-induced logic errors and upset susceptibility of an advanced control system

A simulation study is described which predicts the susceptibility of an advanced control system to electrical transients resulting in logic errors, latched errors, error propagation, and digital upset. The system is based on a custom-designed microprocessor and it incorporates fault-tolerant techniques. The system under test and the method to perform the transient injection experiment are described. Results for 2100 transient injections are analyzed and classified according to charge level, type of error, and location of injection

From FPGA to ASIC: A RISC-V processor experience

This work document a correct design flow using these tools in the Lagarto RISC- V Processor and the RTL design considerations that must be taken into account, to move from a design for FPGA to design for ASIC

Overview of Hydra: a concurrent language for synchronous digital circuit design

Hydra is a computer hardware description language that integrates several kinds of software tool (simulation, netlist generation and timing analysis) within a single circuit specification. The design language is inherently concurrent, and it offers black box abstraction and general design patterns that simplify the design of circuits with regular structure. Hydra specifications are concise, allowing the complete design of a computer system as a digital circuit within a few pages. This paper discusses the motivations behind Hydra, and illustrates the system with a significant portion of the design of a basic RISC processor

Efficient Simulation of Structural Faults for the Reliability Evaluation at System-Level

In recent technology nodes, reliability is considered a part of the standard design ¿ow at all levels of embedded system design. While techniques that use only low-level models at gate- and register transfer-level offer high accuracy, they are too inefficient to consider the overall application of the embedded system. Multi-level models with high abstraction are essential to efficiently evaluate the impact of physical defects on the system. This paper provides a methodology that leverages state-of-the-art techniques for efficient fault simulation of structural faults together with transaction-level modeling. This way it is possible to accurately evaluate the impact of the faults on the entire hardware/software system. A case study of a system consisting of hardware and software for image compression and data encryption is presented and the method is compared to a standard gate/RT mixed-level approac

Computational Modalities of Belousov-Zhabotinsky Encapsulated Vesicles

We present both simulated and partial empirical evidence for the computational utility of many connected vesicle analogs of an encapsulated non-linear chemical processing medium. By connecting small vesicles containing a solution of sub-excitable Belousov-Zhabotinsky (BZ) reaction, sustained and propagating wave fragments are modulated by both spatial geometry, network connectivity and their interaction with other waves. The processing ability is demonstrated through the creation of simple Boolean logic gates and then by the combination of those gates to create more complex circuits

Chip level simulation of fault tolerant computers

Chip level modeling techniques, functional fault simulation, simulation software development, a more efficient, high level version of GSP, and a parallel architecture for functional simulation are discussed

Polarity Control at Runtime:from Circuit Concept to Device Fabrication

Semiconductor device research for digital circuit design is currently facing increasing challenges to enhance miniaturization and performance. A huge economic push and the interest in novel applications are stimulating the development of new pathways to overcome physical limitations affecting conventional CMOS technology. Here, we propose a novel Schottky barrier device concept based on electrostatic polarity control. Specifically, this device can behave as p- or n-type by simply changing an electric input bias. This device combines More-than-Moore and Beyond CMOS elements to create an efficient technology with a viable path to Very Large Scale Integration (VLSI). This thesis proposes a device/circuit/architecture co-optimization methodology, where aspects of device technology to logic circuit and system design are considered. At device level, a full CMOS compatible fabrication process is presented. In particular, devices are demonstrated using vertically stacked, top-down fabricated silicon nanowires with gate-all-around electrode geometry. Source and drain contacts are implemented using nickel silicide to provide quasi-symmetric conduction of either electrons or holes, depending on the mode of operation. Electrical measurements confirm excellent performance, showing Ion/Ioff > 10^7 and subthreshold slopes approaching the thermal limit, SS ~ 60mV/dec (~ 63mV/dec) for n(p)-type operation in the same physical device. Moreover, the shown devices behave as p-type for a polarization bias (polarity gate voltage, Vpg) of 0V, and n-type for a Vpg = 1V, confirming their compatibility with multi-level static logic circuit design. At logic gate level, two- and four-transistor logic gates are fabricated and tested. In particular, the first fully functional, two-transistor XOR logic gate is demonstrated through electrical characterization, confirming that polarity control can enable more compact logic gate design with respect to conventional CMOS. Furthermore, we show for the first time fabricated four- transistors logic gates that can be reconfigured as NAND or XOR only depending on their external connectivity. In this case, logic gates with full swing output range are experimentally demonstrated. Finally, single device and mixed-mode TCAD simulation results show that lower Vth and more optimized polarization ranges can be expected in scaled devices implementing strain or high-k technologies. At circuit and system level, a full semi-custom logic circuit design tool flow was defined and configured. Using this flow, novel logic libraries based on standard cells or regular gate fabrics were compared with standard CMOS. In this respect, results were shown in comparison to CMOS, including a 40% normalized area-delay product reduction for the analyzed standard cell libraries, and improvements of over 2× in terms of normalized delay for regular Controlled Polarity (CP)-based cells in the context of Structured ASICs. These results, in turn, confirm the interest in further developing and optimizing CP devices, as promising candidates for future digital circuit technology