142 research outputs found
Composite cavity for enhanced efficiency of up conversion.
Methods, apparatus and systems for an up-converter resonant cavity light emitting diode device includes a semiconductor light source, an up-converter to form the light emitter with up-converting materials and an electrical source coupled with the semiconductor light source for providing electrical energy to the semiconductor light source to provide a desired wavelength emitted light. The semiconductor light source is a resonant cavity light emitting diode or laser that emits an approximately 975 nm wavelength to provide electrical and optical confinement to the semiconductor light source to fonn a resonant cavity up-converting light emitting diode (UCIRCLED). Rows and columns of electrodes provide active matrix addressing of plural sets of UC/RCLEDs for display devices. The up-converter resonant cavity light emitting diode device has applications in head mounted projection display optical system using spectrally selective beam splitters to eliminate spectral overlap between colors a
OLED microdisplays control cell behavior through optogenetics
M.C. Gather acknowledges funding from Marie Curie Career Integration Grant (PCIG45-GA-2012-334407), from the Scottish Funding Council (via SUPA), and from the RS Macdonald Charitable Trust.OLED microdisplays are introduced as a microscopic illumination platform for cell biology. The μm-scale dimensions of each pixel and the μm-thin encapsulation enable controlled light exposure of individual live cells. This breakthrough is facilitated by recent progress in ultrathin metal electrodes and by quality control via high resolution hyperspectral imaging.PostprintPeer reviewe
Combination of up-converting materials with semiconductor light sources
Methods, apparatus and systems for an up-converter resonant cavity light emitting diode device includes a semiconductor light source, an up-converter to form the light emitter with up-converting materials and an electrical source coupled with the semiconductor light source for providing electrical energy to the semiconductor light source to provide a desired wavelength emitted light. The semiconductor light source is a resonant cavity light emitting diode or laser that emits an approximately 975 nm wavelength to provide electrical and optical confinement to the semiconductor light source to form an up-converting resonant cavity light emitting diode (UCIRCLED). Rows and columns of electrodes provide active matrix addressing of plural sets of UCIRCLEDs for display devices. The up-converter resonant cavity light emitting diode device has applications in head mounted projection display optical system using spectrally selective beam splitters to eliminate spectral overlap between colors a
Composite cavity for enhanced efficiency of up conversion.
Methods, apparatus and systems for an up-converter resonant cavity light emitting diode device includes a semiconductor light source, an up-converter to form the light emitter with up-converting materials and an electrical source coupled with the semiconductor light source for providing electrical energy to the semiconductor light source to provide a desired wavelength emitted light. The semiconductor light source is a resonant cavity light emitting diode or laser that emits an approximately 975 nm wavelength to provide electrical and optical confinement to the semiconductor light source to fonn a resonant cavity up-converting light emitting diode (UCIRCLED). Rows and columns of electrodes provide active matrix addressing of plural sets of UC/RCLEDs for display devices. The up-converter resonant cavity light emitting diode device has applications in head mounted projection display optical system using spectrally selective beam splitters to eliminate spectral overlap between colors a
Active-matrix GaN micro light-emitting diode display with unprecedented brightness
Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m²
Pixel design and characterization of high-performance tandem OLED microdisplays
Organic Light-Emitting Diode (OLED) microdisplays - miniature Electronic Displays comprising a
sandwich of organic light emitting diode over a substrate containing CMOS circuits designed to function
as an active matrix backplane – were first reported in the 1990s and, since then, have advanced to the
mainstream. The smaller dimensions and higher performance of CMOS circuit elements compared to
that of equivalent thin film transistors implemented in technologies for large OLED display panels offer
a distinct advantage for ultra-miniature display screens. Conventional OLED has suffered from lifetime
degradation at high brightness and high current density. Recently, tandem-structure OLED devices have
been developed using charge generation layers to implement two or more OLED units in a single stack.
They can achieve higher brightness at a given current density. The combination of emissive-nature, fast
response, medium to high luminance, low power consumption and appropriate lifetime makes OLED a
favoured candidate for near-to-eye systems. However, it is also challenging to evaluate the pixel level
optical response of OLED microdisplays as the pixel pitch is extremely small and relative low light
output per pixel. Advanced CMOS Single Photon Avalanche Diode (SPAD) technology is progressing
rapidly and is being deployed in a wide range of applications. It is also suggested as a replacement for
photomultiplier tube (PMT) for photonic experiments that require high sensitivity. CMOS SPAD is a
potential tool for better and cheaper display optical characterizations.
In order to incorporate the novel tandem structure OLED within the computer aided design (CAD) flow
of microdisplays, we have developed an equivalent circuit model that accurately describes the tandem
OLED electrical characteristics. Specifically, new analogue pulse width modulation (PWM) pixel
circuit designs have been implemented and fabricated in small arrays for test and characterization
purposes. We report on the design and characterization of these novel pixel drive circuits for OLED
microdisplays. Our drive circuits are designed to allow a state-of-the-art sub-pixel pitch of around 5 μm
and implemented in 130 nm CMOS. A performance comparison with a previous published analogue
PWM pixel is reported. Moreover, we have employed CMOS SPAD sensors to perform detailed optical
measurements on the OLED microdisplay pixels at very high sampling rate (50 kHz, 10 μs exposure),
very low light level (2×10-4 cd/m2) and over a very wide dynamic range (83 dB) of luminance. This
offers a clear demonstration of the potential of the CMOS SPAD technology to reveal hitherto obscure
details of the optical characteristics of individual and groups of OLED pixels and thereby in display
metrology in general.
In summary, there are three key contributions to knowledge reported in this thesis. The first is a new
equivalent circuit model specifically for tandem structure OLED. The model is verified to provide
accurately illustrate the electrical response of the tandem OLED with different materials. The second is
the novel analogue PWM pixel achieve a 5μm sub-pixel pitch with 2.4 % pixel-to-pixel variation. The
third is the new application and successful characterization experiment of OLED microdisplay pixels
with SPAD sensors. It revealed the OLED pixel overshoot behaviour with a QIS SPAD sensor
Full-Color LCD Microdisplay System Based on OLED Backlight Unit and Field-Sequential Color Driving Method
We developed a single-panel LCD microdisplay system using a field-sequential color (FSC) driving method and an organic light-emitting diode (OLED) as a backlight unit (BLU). The 0.76′′ OLED BLU with red, green, and blue (RGB) colors was fabricated by a conventional UV photolithography patterning process and by vacuum deposition of small molecule organic layers. The field-sequential driving frequency was set to 255 Hz to allow each of the RGB colors to be generated without color mixing at the given display frame rate. A prototype FSC LCD microdisplay system consisting of a 0.7′′ LCD microdisplay panel and the 0.76′′ OLED BLU successfully exhibited color display and moving picture images using the FSC driving method
The micro-LED roadmap: status quo and prospects
Micro light-emitting diode (micro-LED) will play an important role in the future generation of smart displays. They are found very attractive in many applications, such as maskless lithography, biosensor, augmented reality (AR)/mixed reality etc, at the same time. A monitor that can fulfill saturated color rendering, high display resolution, and fast response time is highly desirable, and the micro-LED-based technology could be our best chance to meet these requirements. At present, semiconductor-based red, green and blue micro-LED chips and color-conversion enhanced micro-LEDs are the major contenders for full-color high-resolution displays. Both technologies need revolutionary ways to perfect the material qualities, fabricate the device, and assemble the individual parts into a system. In this roadmap, we will highlight the current status and challenges of micro-LED-related issues and discuss the possible advances in science and technology that can stand up to the challenges. The innovation in epitaxy, such as the tunnel junction, the direct epitaxy and nitride-based quantum wells for red and ultraviolet, can provide critical solutions to the micro-LED performance in various aspects. The quantum scale structure, like nanowires or nanorods, can be crucial for the scaling of the devices. Meanwhile, the color conversion method, which uses colloidal quantum dot as the active material, can provide a hassle-free way to assemble a large micro-LED array and emphasis the full-color demonstration via colloidal quantum dot. These quantum dots can be patterned by porous structure, inkjet, or photo-sensitive resin. In addition to the micro-LED devices, the peripheral components or technologies are equally important. Microchip transfer and repair, heterogeneous integration with the electronics, and the novel 2D material cannot be ignored, or the overall display module will be very power-consuming. The AR is one of the potential customers for micro-LED displays, and the user experience so far is limited due to the lack of a truly qualified display. Our analysis showed the micro-LED is on the way to addressing and solving the current problems, such as high loss optical coupling and narrow field of view. All these efforts are channeled to achieve an efficient display with all ideal qualities that meet our most stringent viewing requirements, and we expect it to become an indispensable part of our daily life
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