2,111 research outputs found

    A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C

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    An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2

    Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors.

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    Temperature sensors are routinely found in devices used to monitor the environment, the human body, industrial equipment, and beyond. In many such applications, the energy available from batteries or the power available from energy harvesters is extremely limited due to limited available volume, and thus the power consumption of sensing should be minimized in order to maximize operational lifetime. Here we present a new method to transduce and digitize temperature at very low power levels. Specifically, two pA current references are generated via small tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent and proportional to temperature, respectively, which are then used to charge digitally-controllable banks of metal-insulator-metal (MIM) capacitors that, via a discrete-time feedback loop that equalizes charging time, digitize temperature directly. The proposed temperature sensor was integrated into a silicon microchip and occupied 0.15 mm2 of area. Four tested microchips were measured to consume only 113 pW with a resolution of 0.21 °C and an inaccuracy of ±1.65 °C, which represents a 628× reduction in power compared to prior-art without a significant reduction in performance

    An accurate, trimless, high PSRR, low-voltage, CMOS bandgap reference IC

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    Bandgap reference circuits are used in a host of analog, digital, and mixed-signal systems to establish an accurate voltage standard for the entire IC. The accuracy of the bandgap reference voltage under steady-state (dc) and transient (ac) conditions is critical to obtain high system performance. In this work, the impact of process, power-supply, load, and temperature variations and package stresses on the dc and ac accuracy of bandgap reference circuits has been analyzed. Based on this analysis, the a bandgap reference that 1. has high dc accuracy despite process and temperature variations and package stresses, without resorting to expensive trimming or noisy switching schemes, 2. has high dc and ac accuracy despite power-supply variations, without using large off-chip capacitors that increase bill-of-material costs, 3. has high dc and ac accuracy despite load variations, without resorting to error-inducing buffers, 4. is capable of producing a sub-bandgap reference voltage with a low power-supply, to enable it to operate in modern, battery-operated portable applications, 5. utilizes a standard CMOS process, to lower manufacturing costs, and 6. is integrated, to consume less board space has been proposed. The functionality of critical components of the system has been verified through prototypes after which the performance of the complete system has been evaluated by integrating all the individual components on an IC. The proposed CMOS bandgap reference can withstand 5mA of load variations while generating a reference voltage of 890mV that is accurate with respect to temperature to the first order. It exhibits a trimless, dc 3-sigma accuracy performance of 0.84% over a temperature range of -40°C to 125°C and has a worst case ac power-supply ripple rejection (PSRR) performance of 30dB up to 50MHz using 60pF of on-chip capacitance. All the proposed techniques lead to the development of a CMOS bandgap reference that meets the low-cost, high-accuracy demands of state-of-the-art System-on-Chip environments.Ph.D.Committee Chair: Rincon-Mora, Gabriel; Committee Member: Ayazi, Farrokh; Committee Member: Bhatti, Pamela; Committee Member: Leach, W. Marshall; Committee Member: Morley, Thoma

    Design And Simulation Of Cmos-Based Bandgap Reference Voltage With Compensation Circuit Using 0.18 Μm Process Technology

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    Voltage reference circuit is important in electronic world nowadays. A CMOS based bandgap reference (BGR) circuit is preferred due to its size is smaller and consume less power. However, the drawback is the reference voltage variation of CMOS based BGR circuit is big in wide range of temperature, thus the temperature coefficient of it is high. Hence, an improved version of piecewise curvature-corrected Bandgap voltage reference circuit which has low voltage variation in wide range of temperature is introduced in this project to overcome the problem mentioned above. The BGR circuit is designed using CMOS compatible process in 0.18μm CMOS process technology and simulated by using Cadence tool. The proposed piecewise curvature-corrected BGR operate properly with output voltage of 558.6 mV to 558.3 mV by varying the voltage supply 1.4 V to 3.3 V at 27°C and the line regulation is 0.016% . Besides that, the best temperature coefficient obtained is 9.2 ppm/°C in the temperature range of -25°C to 150°C at 1.8 V. The PSSR of the proposed circuit is -69.91 dB at frequency less 10 kHz. The layout design of the proposed circuit is done by using Silterra 0.18 μm standard CMOS process and total die area is 0.0175 mm2 and temperature coefficient obtained in post layout simulation is 11.66ppm/°C. In short, it is found that the proposed design of BGR circuit is able to achieve high temperature range and relatively low voltage variation

    A Low-Power Low-Voltage Bandgap Reference in CMOS

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    Bandgap reference plays a substantial role in integrated circuit. Traditionally, it provides a constant reference voltage of 1.2051/ for other blocks in the circuit while itself is independent of temperature and power supply. However, the development of CMOS technology has brought us into a new era of high integration and ultra-low power consumption. As the gate length scales down, it is crucial to build circuits that are able to work under a very low voltage power supply, for instance, lower than the bandgap voltage of 1.205V. Building bandgap circuits to generate the conven­ tional bandgap voltage under a low voltage power supply such as 1.2V or IV is no longer practical nor useful. Thus, bandgap references working under low-voltage and consuming low-power is becoming the trend of research and development nowadays. In this thesis work, the potential structure of a low-voltage low-power bandgap reference is proposed, which is based on extracting a current that is a fraction of the traditional bandgap voltage. All the necessary blocks are designed to achieve the high accuracy bandgap reference, including bandgap core circuit, op-amp, start-up circuit and output stage. As a result, the designed bandgap reference is able to work under 1.2V power supply and provides an output reference voltage of 584.7mV. It has a variation of only 244.38fiV for the temperature range of 0°C ~ 125°C and has a variation of only 1.1mV for a power supply range of 1.08V ~ 1.32V. The layout design for the bandgap reference structure is also done carefully at the late stage, with an area of 100fj,m x 85¡xm

    UHF Power Transmission for Passive Sensor Transponders

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    Passive transponder tags operating in the ultra high frequency (UHF) range receive their power supply from the electromagnetic carrier wave from a remote base station. The maximum range is largely determined by the circuits’ current consumption and the rectifier efficiency. Reading ranges of several meters have recently been reported for several state of the art RFID (Radio frequency IDentification) tags [1]. The presented UHF transponder chip with integrated temperature sensor was designed for a 0.35 ?m CMOS process with EEPROM, Schottky diodes, and double poly layers. Due to a more complex architecture and additional functionality, the power consumption of the presented sensor transponder tag is significantly larger than that of simple RFID tags. The A/D conversion requires a stable, ripple-free supply voltage with a relatively large DC value. A novel rectifier circuit generates the supply voltage from the high frequency antenna signal. The circuit requires only -11.4 dBm input power and is insensitive to temperature and process variations. The maximum operating distance is approximately 4.5 m

    A Sub-kT/q Voltage Reference Operating at 150 mV

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    We propose a subthreshold CMOS voltage reference operating with a minimum supply voltage of only 150 mV, which is three times lower than the minimum value presently reported in the literature. The generated reference voltage is only 17.69 mV. This result has been achieved by introducing a temperature compensation technique that does not require the drain-source voltage of each MOSFET to be larger than 4kT/q. The implemented solution consists in two transistors voltage reference with two MOSFETs of the same threshold-type and exploits the dependence of the threshold voltage on transistor size. Measurements performed over a large sample population of 60 chips from two separate batches show a standard deviation of only 0.29 mV. The mean variation of the reference voltage for VDD ranging from 0.15 to 1.8 V is 359.5 μV/V, whereas the mean variation of VREF in the temperature range from 0°C to 120°C is 26.74 μV/°C. The mean power consumption at 25 °C for VDD = 0.15 V is 26.1 pW. The occupied area is 1200 μm2
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