A 0.2pJ/conversion-step 6-bit 200MHz flash ADC with redundancy

Comunicación presentada al "27th Conference on Design of Circuits and Integrated Systems (DCIS 2012)" celebrada del 28 al 30 de Noviembre del 2012 en Avignon (Francia), organizada por el LIRMM laboratory of Montpellier: http://www.lirmm.fr/dcis2012/index.phpIn this paper, a 200MHz 6-bit Flash analog-to-digital converter (ADC) is presented. The principal objective is to obtain a digital-friendly converter. Hence, small and simple latched comparators are used and redundancy allows reducing the offset down to an acceptable level. This obviously requires calibration but reduces power consumption, since small size transistors can be used and the unused comparators are powered down. The proposed ADC is designed in UMC 0:18m CMOS technology. Full electrical simulations show that the ADC reaches an effective number of bits (ENOB) of 5.3 associated to a signal-to-noise-anddistortion ratio (SNDR) is 33dB. The converter consumes only 1.56mW and has figure-of-merit (FoM) of 0.2 pJ / conversion step.This work has been partially funded by the Junta de Andalucia project P09-TIC-5386, the Ministerio de Economia y Competitividad project TEC2011-28302, both of them cofinanced by the FEDER program.Peer Reviewe

Static and dynamic nonlinearity compensation techniques for high performance current-steering digital-to-analog converters

High-speed high-accuracy digital-to-analog converters (DACs) are the crucial building blocks for many signal processing and telecommunication systems. The current-steering architecture is extensively used for these applications. With different decoding schemes--binary-weighted, unary-coded, and segment-coded, current-steering DACs are realized by groups of matched current sources. Their performance is limited by many nonlinear mechanisms such as random mismatch errors, gradient effect, code and voltage dependence of finite output impedance, nonlinear settling time, charge injection, and switch timing errors. In this thesis, two nonlinearity compensation techniques are presented to improve the overall performance of the current-steering DACs. The first design technique is a novel digital calibration technique--complete-folding, which effectively compensates the random mismatch errors by selectively regrouping current sources into a fully binary-weighted array based on current comparisons after chip fabrication. The implementation only requires an analog current comparator and some digital circuitry. The minimum requirement of analog circuits makes complete-folding calibration suitable for DAC design in the low-voltage process. Statistical results with a behavioral model of a 14-bit segmented DAC in MATLAB show that complete-folding calibration can reduce the total gate area of current sources by a factor of almost 1200 compared to the DAC without using any calibration. Additional results also show that this new calibration technique has the superior performance in compensating random mismatch errors as compared to state-of-the-art. The second design technique is a novel output impedance linearization technique that very effectively reduces the code and voltage dependence of finite output impedance. The linearization is achieved by using a small DAC switched with control signals opposite to those for the main DAC. The area and power overhead is less than 5% of the main DAC. Simulation results with a 14-bit segmented current-steering DAC in standard 0.18μm CMOS process show that the DAC\u27s integral nonlinearity (INL) due to finite output impedance is improved by almost 5 bits. Additional results show that this technique is very robust to random mismatch errors. Moreover, not only the static linearity is improved, but most importantly there is a large dynamic linearity enhancement by output impedance linearization. Simulation results show that spurious-free dynamic range (SFDR) can be improved by almost 30 dB at the low signal frequencies and more than 8 dB for the high signal frequencies up to Nyquist rate while sampling at 500MS/s

High-Speed Analog-to-Digital Converters for Broadband Applications

Flash Analog-to-Digital Converters (ADCs), targeting optical communication standards, have been reported in SiGe BiCMOS technology. CMOS implementation of such designs faces two challenges. The first is to achieve a high sampling speed, given the lower gain-bandwidth (lower ft) of CMOS technology. The second challenge is to handle the wide bandwidth of the input signal with a certain accuracy. Although the first problem can be relaxed by using the time-interleaved architecture, the second problem remains as a main obstacle to CMOS implementation. As a result, the feasibility of the CMOS implementation of ADCs for such applications, or other wide band applications, depends primarily on achieving a very small input capacitance (large bandwidth) at the desired accuracy. In the flash architecture, the input capacitance is traded off for the achievable accuracy. This tradeoff becomes tighter with technology scaling. An effective way to ease this tradeoff is to use resistive offset averaging. This permits the use of smaller area transistors, leading to a reduction in the ADC input capacitance. In addition, interpolation can be used to decrease the input capacitance of flash ADCs. In an interpolating architecture, the number of ADC input preamplifiers is reduced significantly, and a resistor network interpolates the missing zero-crossings needed for an N-bit conversion. The resistive network also averages out the preamplifiers offsets. Consequently, an interpolating network works also as an averaging network. The resistor network used for averaging or interpolation causes a systematic non-linearity at the ADC transfer characteristics edges. The common solution to this problem is to extend the preamplifiers array beyond the input signal voltage range by using dummy preamplifiers. However, this demands a corresponding extension of the flash ADC reference-voltage resistor ladder. Since the voltage headroom of the reference ladder is considered to be a main bottleneck in the implementation of flash ADCs in deep-submicron technologies with reduced supply voltage, extending the reference voltage beyond the input voltage range is highly undesirable. The principal objective of this thesis is to develop a new circuit technique to enhance the bandwidth-accuracy product of flash ADCs. Thus, first, a rigorous analysis of flash ADC architectures accuracy-bandwidth tradeoff is presented. It is demonstrated that the interpolating architecture achieves a superior accuracy compared to that of a full flash architecture for the same input capacitance, and hence would lead to a higher bandwidth-accuracy product, especially in deep-submicron technologies that use low power supplies. Also, the gain obtained, when interpolation is employed, is quantified. In addition, the limitations of a previous claim, which suggests that an interpolating architecture is equivalent to an averaging full flash architecture that trades off accuracy for the input capacitance, is presented. Secondly, a termination technique for the averaging/interpolation network of flash ADC preamplifiers is devised. The proposed technique maintains the linearity of the ADC at the transfer characteristics edges and cancels out the over-range voltage, consumed by the dummy preamplifiers. This makes flash ADCs more amenable for integration in deep-submicron CMOS technologies. In addition, the elimination of this over-range voltage allows a larger least-significant bit. As a result, a higher input referred offset is tolerated, and a significant reductions in the ADC input capacitance and power dissipation are achieved at the same accuracy. Unlike a previous solution, the proposed technique does not introduce negative transconductance at flash ADC preamplifiers array edges. As a result, the offset averaging technique can be used efficiently. To prove the resulting saving in the ADC input capacitance and power dissipation that is attained by the proposed termination technique, a 6-bit 1.6-GS/s flash ADC test chip is designed and implemented in 0.13-$\mu$m CMOS technology. The ADC consumes 180 mW from a 1.5-V supply and achieves a Signal-to-Noise-plus-Distortion Ratio (SNDR) of 34.5 dB and 30 dB at 50-MHz and 1450-MHz input signal frequency, respectively. The measured peak Integral-Non-Linearity (INL) and Differential-Non-Linearity (DNL) are 0.42 LSB and 0.49 LSB, respectively

High-speed Low-voltage CMOS Flash Analog-to-Digital Converter for Wideband Communication System-on-a-Chip

With higher-level integration driven by increasingly complex digital systems and downscaling CMOS processes available, system-on-a-chip (SoC) is an emerging technology of low power, high cost effectiveness and high reliability and is exceedingly attractive for applications in high-speed data conversion wireless and wideband communication systems. This research presents a novel ADC comparator design methodology; the speed and performance of which is not restricted by the supply voltage reduction and device linearity deterioration in scaling-down CMOS processes. By developing a dynamic offset suppression technique and a circuit optimization method, the comparator can achieve a 3 dB frequency of 2 GHz in 130 nanometer (nm) CMOS process. Combining this new comparator design and a proposed pipelined thermometer-Gray- binary encoder designed by the DCVSPG logic, a high-speed, low-voltage clocked-digital- comparator (CDC) pipelined CMOS flash ADC architecture is proposed for wideband communication SoC. This architecture has advantages of small silicon area, low power, and low cost. Three CDC-based pipelined CMOS flash ADCs were implemented in 130 nm CMOS process and their experimental results are reported: 1. 4-b, 2.5-GSPS ADC: SFDR of 21.48-dB, SNDR of 15.99-dB, ENOB of 2.4-b, ERBW of 1-GHz, power of 7.9-mW, and area of 0.022-mm2. 2. 4-b, 4-GSPS ADC: SFDR of 25-dB, SNDR of 18.6-dB, ENOB of 2.8-b, ERBW of 2-GHz, power of 11-mW. 3. 6-b, 4-GSPS ADC: SFDR of 48-dB at a signal frequency of 11.72-MHz, SNDR of 34.43-dB, ENOB of 5.4-b, power of 28-mW. An application of the proposed CDC-based pipelined CMOS flash ADC is 1-GHz bandwidth, 2.5-GSPS digital receiver on a chip. To verify the performance of the receiver, a mixed-signal block-level simulation and verification flow was built in Cadence AMS integrated platform. The verification results of the digital receiver using a 4-b 2.5-GSPS CDC-based pipelined CMOS ADC, a 256-point, 12-point kernel function FFT and a frequency detection logic show that two tone signals up to 1125 MHz can be detected and discriminated. A notable contribution of this research is that the proposed ADC architecture and the comparator design with dynamic offset suppression and optimization are extremely suitable for future VDSM CMOS processes and make all-digital receiver SoC design practical

Design Considerations for Wide Bandwidth Continuous-Time Low-Pass Delta-Sigma Analog-to-Digital Converters

Continuous-time (CT) delta-sigma (ΔΣ) analog-to-digital converters (ADC) have emerged as the popular choice to achieve high resolution and large bandwidth due to their low cost, power efficiency, inherent anti-alias filtering and digital post processing capabilities. This work presents a detailed system-level design methodology for a low-power CT ΔΣ ADC. Design considerations and trade-offs at the system-level are presented. A novel technique to reduce the sensitivity of the proposed ADC to clock jitter-induced feedback charge variations by employing a hybrid digital-to-analog converter (DAC) based on switched-capacitor circuits is also presented. The proposed technique provides a clock jitter tolerance of up to 5ps (rms). The system is implemented using a 5th order active-RC loop filter, 9-level quantizer and DAC, achieving 74dB SNDR over 20MHz signal bandwidth, at 400MHz sampling frequency in a 1.2V, 90 nm CMOS technology. A novel technique to improve the linearity of the feedback digital-to-analog converters (DAC) in a target 11-bits resolution, 100MHz bandwidth, 2GHz sampling frequency CT ΔΣ ADC is also presented in this work. DAC linearity is improved by combining dynamic element matching and automatic background calibration to achieve up to 18dB improvement in the SNR. Transistor-level circuit implementation of the proposed technique was done in a 1.8V, 0.18μm BiCMOS process

High speed – energy efficient successive approximation analog to digital converter using tri-level switching

This thesis reports issues and design methods used to achieve high-speed and high-resolution Successive Approximation Register analog to digital converters (SAR ADCs). A major drawback of this technique relates to the mismatch in the binary ratios of capacitors which causes nonlinearity. Another issue is the use of large capacitors due to nonlinear effect of parasitic capacitance. Nonlinear effect of capacitor mismatch is investigated in this thesis. Based on the analysis, a new Tri-level switching algorithm is proposed to reduce the matching requirement for capacitors in SAR ADCs. The integral non-linearity (INL) and the differential non-linearity (DNL) of the proposed scheme are reduced by factor of two over conventional SAR ADC, which is the lowest compared to the previously reported schemes. In addition, the switching energy of the proposed scheme is reduced by 98.02% compared with the conventional SAR architecture. A new correction method to solve metastability error of comparator based on a novel design approach is proposed which reduces the required settling time about 1.1τ for each conversion cycle. Based on the above proposed methods two SAR ADCs: an 8-bit SAR ADC with 50MS/sec sampling rate, and a 10-bit SAR split ADC with 70 MS/sec sampling rate have been designed in 0.18μm Silterra complementary metal oxide semiconductor (CMOS) technology process which works at 1.2V supply voltage and input voltage of 2.4Vp-p. The 8-bit ADC digitizes 25MHz input signal with 48.16dB signal to noise and distortion ratio (SNDR) and 52.41dB spurious free dynamic range (SFDR) while consuming about 589μW. The figure of merit (FOM) of this ADC is 56.65 fJ/conv-step. The post layout of the 10-bit ADC with 1MHz input frequency produces SNDR, SFDR and effective number of bits (ENOB) of 57.1dB, 64.05dB and 9.17Bit, respectively, while its DNL and INL are -0.9/+2.8 least significant bit (LSB) and -2.5/+2.7 LSB, respectively. The total power consumption, including digital, analog and reference power, is 1.6mW. The FOM is 71.75fJ/conv. step

Circuits and Systems for On-Chip RF Chemical Sensors and RF FDD Duplexers

Integrating RF bio-chemical sensors and RF duplexers helps to reduce cost and area in the current applications. Furthermore, new applications can exist based on the large scale integration of these crucial blocks. This dissertation addresses the integration of RF bio-chemical sensors and RF duplexers by proposing these initiatives. A low power integrated LC-oscillator-based broadband dielectric spectroscopy (BDS) system is presented. The real relative permittivity ε’r is measured as a shift in the oscillator frequency using an on-chip frequency-to-digital converter (FDC). The imaginary relative permittivity ε”r increases the losses of the oscillator tank which mandates a higher dc biasing current to preserve the same oscillation amplitude. An amplitude-locked loop (ALL) is used to fix the amplitude and linearize the relation between the oscillator bias current and ε”r. The proposed BDS system employs a sensing oscillator and a reference oscillator where correlated double sampling (CDS) is used to mitigate the impact of flicker noise, temperature variations and frequency drifts. A prototype is implemented in 0.18 µm CMOS process with total chip area of 6.24 mm^2 to operate in 1-6 GHz range using three dual bands LC oscillators. The achieved standard deviation in the air is 2.1 ppm for frequency reading and 110 ppm for current reading. A tunable integrated electrical balanced duplexer (EBD) is presented as a compact alternative to multiple bulky SAW and BAW duplexers in 3G/4G cellular transceivers. A balancing network creates a replica of the transmitter signal for cancellation at the input of a single-ended low noise amplifier (LNA) to isolate the receive path from the transmitter. The proposed passive EBD is based on a cross-connected transformer topology without the need of any extra balun at the antenna side. The duplexer achieves around 50 dB TX-RX isolation within 1.6-2.2 GHz range up to 22 dBm. The cascaded noise figure of the duplexer and LNA is 6.5 dB, and TX insertion loss (TXIL) of the duplexer is about 3.2 dB. The duplexer and LNA are implemented in 0.18 µm CMOS process and occupy an active area of 0.35 mm^2

Digital Background Self-Calibration Technique for Compensating Transition Offsets in Reference-less Flash ADCs

This Dissertation focusses on proving that background calibration using adaptive algorithms are low-cost, stable and effective methods for obtaining high accuracy in flash A/D converters. An integrated reference-less 3-bit flash ADC circuit has been successfully designed and taped out in UMC 180 nm CMOS technology in order to prove the efficiency of our proposed background calibration. References for ADC transitions have been virtually implemented built-in in the comparators dynamic-latch topology by a controlled mismatch added to each comparator input front-end. An external very simple DAC block (calibration bank) allows control the quantity of mismatch added in each comparator front-end and, therefore, compensate the offset of its effective transition with respect to the nominal value. In order to assist to the estimation of the offset of the prototype comparators, an auxiliary A/D converter with higher resolution and lower conversion speed than the flash ADC is used: a 6-bit capacitive-DAC SAR type. Special care in synchronization of analogue sampling instant in both ADCs has been taken into account. In this thesis, a criterion to identify the optimum parameters of the flash ADC design with adaptive background calibration has been set. With this criterion, the best choice for dynamic latch architecture, calibration bank resolution and flash ADC resolution are selected. The performance of the calibration algorithm have been tested, providing great programmability to the digital processor that implements the algorithm, allowing to choose the algorithm limits, accuracy and quantization errors in the arithmetic. Further, systematic controlled offset can be forced in the comparators of the flash ADC in order to have a more exhaustive test of calibration

Design of Energy-Efficient A/D Converters with Partial Embedded Equalization for High-Speed Wireline Receiver Applications

As the data rates of wireline communication links increases, channel impairments such as skin effect, dielectric loss, fiber dispersion, reflections and cross-talk become more pronounced. This warrants more interest in analog-to-digital converter (ADC)-based serial link receivers, as they allow for more complex and flexible back-end digital signal processing (DSP) relative to binary or mixed-signal receivers. Utilizing this back-end DSP allows for complex digital equalization and more bandwidth-efficient modulation schemes, while also displaying reduced process/voltage/temperature (PVT) sensitivity. Furthermore, these architectures offer straightforward design translation and can directly leverage the area and power scaling offered by new CMOS technology nodes. However, the power consumption of the ADC front-end and subsequent digital signal processing is a major issue. Embedding partial equalization inside the front-end ADC can potentially result in lowering the complexity of back-end DSP and/or decreasing the ADC resolution requirement, which results in a more energy-effcient receiver. This dissertation presents efficient implementations for multi-GS/s time-interleaved ADCs with partial embedded equalization. First prototype details a 6b 1.6GS/s ADC with a novel embedded redundant-cycle 1-tap DFE structure in 90nm CMOS. The other two prototypes explain more complex 6b 10GS/s ADCs with efficiently embedded feed-forward equalization (FFE) and decision feedback equalization (DFE) in 65nm CMOS. Leveraging a time-interleaved successive approximation ADC architecture, new structures for embedded DFE and FFE are proposed with low power/area overhead. Measurement results over FR4 channels verify the effectiveness of proposed embedded equalization schemes. The comparison of fabricated prototypes against state-of-the-art general-purpose ADCs at similar speed/resolution range shows comparable performances, while the proposed architectures include embedded equalization as well