On-chip Voltage Regulator– Circuit Design and Automation

Title from PDF of title page viewed May 24, 2021Dissertation advisors: Masud H Chowdhury and Yugyung LeeVitaIncludes bibliographical references (page 106-121)Thesis (Ph.D.)--School of Computing and Engineering. University of Missouri--Kansas City, 2021With the increase of density and complexity of high-performance integrated circuits and systems, including many-core chips and system-on-chip (SoC), it is becoming difficult to meet the power delivery and regulation requirements with off-chip regulators. The off-chip regulators become a less attractive choice because of the higher overheads and complexity imposed by the additional wires, pins, and pads. The increased I2R loss makes it challenging to maintain the integrity of different voltage domains under a lower supply voltage environment in the smaller technology nodes. Fully integrated on-chip voltage regulators have proven to be an effective solution to mitigate power delivery and integrity issues. Two types of regulators are considered as most promising for on-chip implementation: (i) the low-drop-out (LDO) regulator and (ii) the switched-capacitor (SC)regulator. The first part of our research mainly focused on the LDO regulator. Inspired by the recent surge of interest for cap-less voltage regulators, we presented two fully on-chip external capacitor-less low-dropout voltage regulator design. The second part of this proposal explores the complexity of designing each block of the regulator/analog circuit and proposed a design methodology for analog circuit synthesis using simulation and learning-based approach. As the complexity is increasing day-by-day in an analog circuit, hierarchical flow mostly uses for design automation. In this work, we focused mainly on Circuit-level, one of the significant steps in the flow. We presented a novel, efficient circuit synthesis flow based on simulation and learning-based optimization methods. The proposed methodology has two phases: the learning phase and the evaluation phase. Random forest, a supervised learning is used to reduce the sample points in the design space and iteration number during the learning phase. Additionally, symmetric constraints are used further to reduce the iteration number during the sizing process. We introduced a three-step circuit synthesis flow to automate the analog circuit design. We used H-spice as a simulation tool during the evaluation phase of the proposed methodology. The three most common analog circuits are chosen: single-stage differential amplifier, operational transconductance amplifier, and two-stage differential amplifier to verify the algorithm. The tool is developed in Python, and the technology we used is0.6um. We also verified the optimized result in Cadence Virtuoso.Introduction -- On-chip power delivery system -- Fundamentals of on-chip voltage regulator -- LDO design in 45NM technology -- LDO design in technology -- Analog design automation -- Proposed analog design methodology -- Energy efficient FDSOI and FINFET based power gating circuit using data retention transistor -- Conclusion and future wor

Design for Reliability and Low Power in Emerging Technologies

Die fortlaufende Verkleinerung von Transistor-Strukturgrößen ist einer der wichtigsten Antreiber für das Wachstum in der Halbleitertechnologiebranche. Seit Jahrzehnten erhöhen sich sowohl Integrationsdichte als auch Komplexität von Schaltkreisen und zeigen damit einen fortlaufenden Trend, der sich über alle modernen Fertigungsgrößen erstreckt. Bislang ging das Verkleinern von Transistoren mit einer Verringerung der Versorgungsspannung einher, was zu einer Reduktion der Leistungsaufnahme führte und damit eine gleichbleibenden Leistungsdichte sicherstellte. Doch mit dem Beginn von Strukturgrößen im Nanometerbreich verlangsamte sich die fortlaufende Skalierung. Viele Schwierigkeiten, sowie das Erreichen von physikalischen Grenzen in der Fertigung und Nicht-Idealitäten beim Skalieren der Versorgungsspannung, führten zu einer Zunahme der Leistungsdichte und, damit einhergehend, zu erschwerten Problemen bei der Sicherstellung der Zuverlässigkeit. Dazu zählen, unter anderem, Alterungseffekte in Transistoren sowie übermäßige Hitzeentwicklung, nicht zuletzt durch stärkeres Auftreten von Selbsterhitzungseffekten innerhalb der Transistoren. Damit solche Probleme die Zuverlässigkeit eines Schaltkreises nicht gefährden, werden die internen Signallaufzeiten üblicherweise sehr pessimistisch kalkuliert. Durch den so entstandenen zeitlichen Sicherheitsabstand wird die korrekte Funktionalität des Schaltkreises sichergestellt, allerdings auf Kosten der Performance. Alternativ kann die Zuverlässigkeit des Schaltkreises auch durch andere Techniken erhöht werden, wie zum Beispiel durch Null-Temperatur-Koeffizienten oder Approximate Computing. Wenngleich diese Techniken einen Großteil des üblichen zeitlichen Sicherheitsabstandes einsparen können, bergen sie dennoch weitere Konsequenzen und Kompromisse. Bleibende Herausforderungen bei der Skalierung von CMOS Technologien führen außerdem zu einem verstärkten Fokus auf vielversprechende Zukunftstechnologien. Ein Beispiel dafür ist der Negative Capacitance Field-Effect Transistor (NCFET), der eine beachtenswerte Leistungssteigerung gegenüber herkömmlichen FinFET Transistoren aufweist und diese in Zukunft ersetzen könnte. Des Weiteren setzen Entwickler von Schaltkreisen vermehrt auf komplexe, parallele Strukturen statt auf höhere Taktfrequenzen. Diese komplexen Modelle benötigen moderne Power-Management Techniken in allen Aspekten des Designs. Mit dem Auftreten von neuartigen Transistortechnologien (wie zum Beispiel NCFET) müssen diese Power-Management Techniken neu bewertet werden, da sich Abhängigkeiten und Verhältnismäßigkeiten ändern. Diese Arbeit präsentiert neue Herangehensweisen, sowohl zur Analyse als auch zur Modellierung der Zuverlässigkeit von Schaltkreisen, um zuvor genannte Herausforderungen auf mehreren Designebenen anzugehen. Diese Herangehensweisen unterteilen sich in konventionelle Techniken ((a), (b), (c) und (d)) und unkonventionelle Techniken ((e) und (f)), wie folgt: $\textbf{(a)}$ Analyse von Leistungszunahmen in Zusammenhang mit der Maximierung von Leistungseffizienz beim Betrieb nahe der Transistor Schwellspannung, insbesondere am optimalen Leistungspunkt. Das genaue Ermitteln eines solchen optimalen Leistungspunkts ist eine besondere Herausforderung bei Multicore Designs, da dieser sich mit den jeweiligen Optimierungszielsetzungen und der Arbeitsbelastung verschiebt. $\textbf{(b)}$ Aufzeigen versteckter Interdependenzen zwischen Alterungseffekten bei Transistoren und Schwankungen in der Versorgungsspannung durch „IR-drops“. Eine neuartige Technik wird vorgestellt, die sowohl Über- als auch Unterschätzungen bei der Ermittlung des zeitlichen Sicherheitsabstands vermeidet und folglich den kleinsten, dennoch ausreichenden Sicherheitsabstand ermittelt. $\textbf{(c)}$ Eindämmung von Alterungseffekten bei Transistoren durch „Graceful Approximation“, eine Technik zur Erhöhung der Taktfrequenz bei Bedarf. Der durch Alterungseffekte bedingte zeitlich Sicherheitsabstand wird durch Approximate Computing Techniken ersetzt. Des Weiteren wird Quantisierung verwendet um ausreichend Genauigkeit bei den Berechnungen zu gewährleisten. $\textbf{(d)}$ Eindämmung von temperaturabhängigen Verschlechterungen der Signallaufzeit durch den Betrieb nahe des Null-Temperatur Koeffizienten (N-ZTC). Der Betrieb bei N-ZTC minimiert temperaturbedingte Abweichungen der Performance und der Leistungsaufnahme. Qualitative und quantitative Vergleiche gegenüber dem traditionellen zeitlichen Sicherheitsabstand werden präsentiert. $\textbf{(e)}$ Modellierung von Power-Management Techniken für NCFET-basierte Prozessoren. Die NCFET Technologie hat einzigartige Eigenschaften, durch die herkömmliche Verfahren zur Spannungs- und Frequenzskalierungen zur Laufzeit (DVS/DVFS) suboptimale Ergebnisse erzielen. Dies erfordert NCFET-spezifische Power-Management Techniken, die in dieser Arbeit vorgestellt werden. $\textbf{(f)}$ Vorstellung eines neuartigen heterogenen Multicore Designs in NCFET Technologie. Das Design beinhaltet identische Kerne; Heterogenität entsteht durch die Anwendung der individuellen, optimalen Konfiguration der Kerne. Amdahls Gesetz wird erweitert, um neue system- und anwendungsspezifische Parameter abzudecken und die Vorzüge des neuen Designs aufzuzeigen. Die Auswertungen der vorgestellten Techniken werden mithilfe von Implementierungen und Simulationen auf Schaltkreisebene (gate-level) durchgeführt. Des Weiteren werden Simulatoren auf Systemebene (system-level) verwendet, um Multicore Designs zu implementieren und zu simulieren. Zur Validierung und Bewertung der Effektivität gegenüber dem Stand der Technik werden analytische, gate-level und system-level Simulationen herangezogen, die sowohl synthetische als auch reale Anwendungen betrachten

Low-Power And High Performance Of An Optimized FinFET Based 8T SRAM Cell Design

The development of the nanotechnology leadsto the shrinking of the size of the transistors to nanometerregion. However, there are a lot of challenges due to sizescaling of the transistors such as short channel effects (SCEs)and threshold voltage roll-off issues. Fin-Type Field EffectTransistor (FinFET) is another alternative technology tosolve the issues of the conventional MOSFET and increasethe performance of the Static Random Access Memory(SRAM) circuit design. FinFET based SRAMs are faster andmore reliable which are often used as memory cache for highspeed operation. However, 6T SRAM cell suffers from accesstransistor sizing conflict resulting in a trade-off between readand write stability. This paper presents an investigation ofthe stability performance in retention, read and write modeof 22nm FinFET based 8T SRAM cell. The performancecomparison of 22nm FinFET based 6T and 8T SRAMs weremade. The simulation of the SRAM model are carried out inGTS Framework TCAD tool based on 22nm technology. In8T SRAM cell, two n-FinFETs are added to the conventional6T SRAM cell which will be controlled by the Read WordLine (RWL) to isolate the read and write operation path forbetter read stability. FinFET based 8T SRAM cell givesbetter performance in Static Noise Margin (SNM) and powerconsumption than 6T SRAM cells. The simulation resultsaffirms the proposed FinFET based 8T SRAM improvedread static noise margin by 166.67% and power consumptionby 76.13% as compared to the FinFET based 6T SRAM

Metamodeling-based Fast Optimization of Nanoscale Ams-socs

Modern consumer electronic systems are mostly based on analog and digital circuits and are designed as analog/mixed-signal systems on chip (AMS-SoCs). the integration of analog and digital circuits on the same die makes the system cost effective. in AMS-SoCs, analog and mixed-signal portions have not traditionally received much attention due to their complexity. As the fabrication technology advances, the simulation times for AMS-SoC circuits become more complex and take significant amounts of time. the time allocated for the circuit design and optimization creates a need to reduce the simulation time. the time constraints placed on designers are imposed by the ever-shortening time to market and non-recurrent cost of the chip. This dissertation proposes the use of a novel method, called metamodeling, and intelligent optimization algorithms to reduce the design time. Metamodel-based ultra-fast design flows are proposed and investigated. Metamodel creation is a one time process and relies on fast sampling through accurate parasitic-aware simulations. One of the targets of this dissertation is to minimize the sample size while retaining the accuracy of the model. in order to achieve this goal, different statistical sampling techniques are explored and applied to various AMS-SoC circuits. Also, different metamodel functions are explored for their accuracy and application to AMS-SoCs. Several different optimization algorithms are compared for global optimization accuracy and convergence. Three different AMS circuits, ring oscillator, inductor-capacitor voltage-controlled oscillator (LC-VCO) and phase locked loop (PLL) that are present in many AMS-SoC are used in this study for design flow application. Metamodels created in this dissertation provide accuracy with an error of less than 2% from the physical layout simulations. After optimal sampling investigation, metamodel functions and optimization algorithms are ranked in terms of speed and accuracy. Experimental results show that the proposed design flow provides roughly 5,000x speedup over conventional design flows. Thus, this dissertation greatly advances the state-of-the-art in mixed-signal design and will assist towards making consumer electronics cheaper and affordable

Gold free ohmic contacts for III-V MOSFET devices

Over the past forty years the development of CMOS has been able to follow Moore’s law using planar silicon technology. However, this technology is reaching its limits as the density of transistors has a significant impact on the power dissipation in an integrated circuit. Alternative channel materials and device architectures will then be required in the future to reduce the power consumption of transistors. The development of CMOS technology with high mobility channel materials, specifically Ge for pMOS and III-V materials for nMOS, was the aim of the European Union FP7 funded Duallogic consortium, of which this project was part. The experimental work at the University of Glasgow was the III-V compound semiconductor MOSFET, in particular the study of Si processing compatible source/drain contacts to III-V MOSFET devices with InxGa1-xAs channel materials, which was an important aspect of this thesis. Another area investigated in this thesis is the impact of current crowding effects on source/drain contact resistance by aggressive scaling of devices. During this thesis, optimisation of a PdGe-based ohmic contact to buried channel device material with a In0.75GaAs channel led to a contact resistance of 0.15Ohm.mm compared to 1Ohm.mm in previous work by R. Hill. The PdGe-based contact also proved to be scalable in both vertical and lateral dimensions. This scaled structure was then integrated in a surface channel MOSFET device with 1μm access regions and gate lengths varying from 100nm to 20μm. The performance of the devices with 20μm gate lengths was then compared to devices with a NiGeAu based ohmic contact. An increase in RC, 1.82Ohm.mm vs. 0.94Ohm.mm, and Ron, 11.1Ohm.mm vs. 8.55Ohm.mm, was observed in the PdGe-based contact, which resulted in a decrease in gm, 92.3mS/mm vs. 103mS/mm, and Id,sat, 103mA/mm vs. 122mA/mm. However, further optimisation of the PdGe-based ohmic contact showed promising results with a contact resistance of 0.45Ohm.mm. The novel test structure is the first test structure, which makes direct contact to III-V material, with critical dimensions below the transfer length. This structure is able to experimentally observe the current crowding effects and allows for the extraction of the sheet resistance underneath the contact and a more accurate extraction of the specific contact resistivity. This offers a significant insight into the impact of the sheet resistance underneath the contact and the role it plays

Sincronização em sistemas integrados a alta velocidade

Doutoramento em Engenharia ElectrotécnicaA distribui ção de um sinal relógio, com elevada precisão espacial (baixo skew) e temporal (baixo jitter ), em sistemas sí ncronos de alta velocidade tem-se revelado uma tarefa cada vez mais demorada e complexa devido ao escalonamento da tecnologia. Com a diminuição das dimensões dos dispositivos e a integração crescente de mais funcionalidades nos Circuitos Integrados (CIs), a precisão associada as transições do sinal de relógio tem sido cada vez mais afectada por varia ções de processo, tensão e temperatura. Esta tese aborda o problema da incerteza de rel ogio em CIs de alta velocidade, com o objetivo de determinar os limites do paradigma de desenho sí ncrono. Na prossecu ção deste objectivo principal, esta tese propõe quatro novos modelos de incerteza com âmbitos de aplicação diferentes. O primeiro modelo permite estimar a incerteza introduzida por um inversor est atico CMOS, com base em parâmetros simples e su cientemente gen éricos para que possa ser usado na previsão das limitações temporais de circuitos mais complexos, mesmo na fase inicial do projeto. O segundo modelo, permite estimar a incerteza em repetidores com liga ções RC e assim otimizar o dimensionamento da rede de distribui ção de relógio, com baixo esfor ço computacional. O terceiro modelo permite estimar a acumula ção de incerteza em cascatas de repetidores. Uma vez que este modelo tem em considera ção a correla ção entre fontes de ruí do, e especialmente util para promover t ecnicas de distribui ção de rel ogio e de alimentação que possam minimizar a acumulação de incerteza. O quarto modelo permite estimar a incerteza temporal em sistemas com m ultiplos dom ínios de sincronismo. Este modelo pode ser facilmente incorporado numa ferramenta autom atica para determinar a melhor topologia para uma determinada aplicação ou para avaliar a tolerância do sistema ao ru ído de alimentação. Finalmente, usando os modelos propostos, são discutidas as tendências da precisão de rel ogio. Conclui-se que os limites da precisão do rel ogio são, em ultima an alise, impostos por fontes de varia ção dinâmica que se preveem crescentes na actual l ogica de escalonamento dos dispositivos. Assim sendo, esta tese defende a procura de solu ções em outros ní veis de abstração, que não apenas o ní vel f sico, que possam contribuir para o aumento de desempenho dos CIs e que tenham um menor impacto nos pressupostos do paradigma de desenho sí ncrono.Distributing a the clock simultaneously everywhere (low skew) and periodically everywhere (low jitter) in high-performance Integrated Circuits (ICs) has become an increasingly di cult and time-consuming task, due to technology scaling. As transistor dimensions shrink and more functionality is packed into an IC, clock precision becomes increasingly a ected by Process, Voltage and Temperature (PVT) variations. This thesis addresses the problem of clock uncertainty in high-performance ICs, in order to determine the limits of the synchronous design paradigm. In pursuit of this main goal, this thesis proposes four new uncertainty models, with di erent underlying principles and scopes. The rst model targets uncertainty in static CMOS inverters. The main advantage of this model is that it depends only on parameters that can easily be obtained. Thus, it can provide information on upcoming constraints very early in the design stage. The second model addresses uncertainty in repeaters with RC interconnects, allowing the designer to optimise the repeater's size and spacing, for a given uncertainty budget, with low computational e ort. The third model, can be used to predict jitter accumulation in cascaded repeaters, like clock trees or delay lines. Because it takes into consideration correlations among variability sources, it can also be useful to promote oorplan-based power and clock distribution design in order to minimise jitter accumulation. A fourth model is proposed to analyse uncertainty in systems with multiple synchronous domains. It can be easily incorporated in an automatic tool to determine the best topology for a given application or to evaluate the system's tolerance to power-supply noise. Finally, using the proposed models, this thesis discusses clock precision trends. Results show that limits in clock precision are ultimately imposed by dynamic uncertainty, which is expected to continue increasing with technology scaling. Therefore, it advocates the search for solutions at other abstraction levels, and not only at the physical level, that may increase system performance with a smaller impact on the assumptions behind the synchronous design paradigm

Unreliable Silicon: Circuit through System-Level Techniques for Mitigating the Adverse Effects of Process Variation, Device Degradation and Environmental Conditions.

Designing and manufacturing integrated circuits in advanced, highly-scaled processing technologies that meet stringent specification sets is an increasingly unreliable proposition. Dimensional processing variations, time and stress dependent device degradation and potentially varying environmental conditions exacerbate deviations in performance, power and even functionality of integrated circuits. This work explores a system-level adaptive design philosophy intended to mitigate the power and performance impact of unreliable silicon devices and presents enabling circuits for SRAM variation mitigation and in-situ measurement of device degradation in 130nm and 45nm processing technologies. An adaptation of RAZOR-based DVS designed for on-chip memory power reduction and reliability lifetime improvement enables the elimination of 250 mV of voltage margin in a 1.8V design, with up to 500 mV of reduction when allowing 5% of memory operations to use multiple cycles. A novel PID-controlled dynamic reliability management (DRM) system is presented, allowing user-specified circuit lifetime to be dynamically managed via dynamic voltage and frequency scaling. Peak performance improvement of 20-35% is achievable in typical processing systems by allowing brief periods of elevated voltage operation through the real-time DRM system, while minimizing voltage during non-critical periods of operation to maximize circuit lifetime. A probabilistic analysis of oxide breakdown using the percolation model indicates the need for 1000-2000 integrated in-situ sensors to achieve oxide lifetime prediction error at or under 10%. The conclusions from the oxide analysis are used to guide the design of a series of novel on-chip reliability monitoring circuits for use in a real-time DRM system. A 130nm in-situ oxide breakdown measurement sensor presented is the first published design of an oxide-breakdown oriented circuit and is compatible with standard-cell style automatic “place and route” design styles used in the majority of application specific integrated circuit designs. Measured results show increases in gate oxide leakage of 14-35% after accelerated stress testing. A second generation design of the on-chip oxide degradation sensor is presented that reduces stress mode power consumption by 111,785X over the initial design while providing an ideal 1:1 mapping of gate leakage to output frequency in extracted simulations.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/60701/1/ekarl_1.pd

Timing speculation and adaptive reliable overclocking techniques for aggressive computer systems

Computers have changed our lives beyond our own imagination in the past several decades. The continued and progressive advancements in VLSI technology and numerous micro-architectural innovations have played a key role in the design of spectacular low-cost high performance computing systems that have become omnipresent in today\u27s technology driven world. Performance and dependability have become key concerns as these ubiquitous computing machines continue to drive our everyday life. Every application has unique demands, as they run in diverse operating environments. Dependable, aggressive and adaptive systems improve efficiency in terms of speed, reliability and energy consumption. Traditional computing systems run at a fixed clock frequency, which is determined by taking into account the worst-case timing paths, operating conditions, and process variations. Timing speculation based reliable overclocking advocates going beyond worst-case limits to achieve best performance while not avoiding, but detecting and correcting a modest number of timing errors. The success of this design methodology relies on the fact that timing critical paths are rarely exercised in a design, and typical execution happens much faster than the timing requirements dictated by worst-case design methodology. Better-than-worst-case design methodology is advocated by several recent research pursuits, which exploit dependability techniques to enhance computer system performance. In this dissertation, we address different aspects of timing speculation based adaptive reliable overclocking schemes, and evaluate their role in the design of low-cost, high performance, energy efficient and dependable systems. We visualize various control knobs in the design that can be favorably controlled to ensure different design targets. As part of this research, we extend the SPRIT3E, or Superscalar PeRformance Improvement Through Tolerating Timing Errors, framework, and characterize the extent of application dependent performance acceleration achievable in superscalar processors by scrutinizing the various parameters that impact the operation beyond worst-case limits. We study the limitations imposed by short-path constraints on our technique, and present ways to exploit them to maximize performance gains. We analyze the sensitivity of our technique\u27s adaptiveness by exploring the necessary hardware requirements for dynamic overclocking schemes. Experimental analysis based on SPEC2000 benchmarks running on a SimpleScalar Alpha processor simulator, augmented with error rate data obtained from hardware simulations of a superscalar processor, are presented. Even though reliable overclocking guarantees functional correctness, it leads to higher power consumption. As a consequence, reliable overclocking without considering on-chip temperatures will bring down the lifetime reliability of the chip. In this thesis, we analyze how reliable overclocking impacts the on-chip temperature of a microprocessor and evaluate the effects of overheating, due to such reliable dynamic frequency tuning mechanisms, on the lifetime reliability of these systems. We then evaluate the effect of performing thermal throttling, a technique that clamps the on-chip temperature below a predefined value, on system performance and reliability. Our study shows that a reliably overclocked system with dynamic thermal management achieves 25% performance improvement, while lasting for 14 years when being operated within 353K. Over the past five decades, technology scaling, as predicted by Moore\u27s law, has been the bedrock of semiconductor technology evolution. The continued downscaling of CMOS technology to deep sub-micron gate lengths has been the primary reason for its dominance in today\u27s omnipresent silicon microchips. Even as the transition to the next technology node is indispensable, the initial cost and time associated in doing so presents a non-level playing field for the competitors in the semiconductor business. As part of this thesis, we evaluate the capability of speculative reliable overclocking mechanisms to maximize performance at a given technology level. We evaluate its competitiveness when compared to technology scaling, in terms of performance, power consumption, energy and energy delay product. We present a comprehensive comparison for integer and floating point SPEC2000 benchmarks running on a simulated Alpha processor at three different technology nodes in normal and enhanced modes. Our results suggest that adopting reliable overclocking strategies will help skip a technology node altogether, or be competitive in the market, while porting to the next technology node. Reliability has become a serious concern as systems embrace nanometer technologies. In this dissertation, we propose a novel fault tolerant aggressive system that combines soft error protection and timing error tolerance. We replicate both the pipeline registers and the pipeline stage combinational logic. The replicated logic receives its inputs from the primary pipeline registers while writing its output to the replicated pipeline registers. The organization of redundancy in the proposed Conjoined Pipeline system supports overclocking, provides concurrent error detection and recovery capability for soft errors, intermittent faults and timing errors, and flags permanent silicon defects. The fast recovery process requires no checkpointing and takes three cycles. Back annotated post-layout gate-level timing simulations, using 45nm technology, of a conjoined two-stage arithmetic pipeline and a conjoined five-stage DLX pipeline processor, with forwarding logic, show that our approach, even under a severe fault injection campaign, achieves near 100% fault coverage and an average performance improvement of about 20%, when dynamically overclocked

Variability-Aware Design of Static Random Access Memory Bit-Cell

The increasing integration of functional blocks in today's integrated circuit designs necessitates a large embedded memory for data manipulation and storage. The most often used embedded memory is the Static Random Access Memory (SRAM), with a six transistor memory bit-cell. Currently, memories occupy more than 50% of the chip area and this percentage is only expected to increase in future. Therefore, for the silicon vendors, it is critical that the memory units yield well, to enable an overall high yield of the chip. The increasing memory density is accompanied by aggressive scaling of the transistor dimensions in the SRAM. Together, these two developments make SRAMs increasingly susceptible to process-parameter variations. As a result, in the current nanometer regime, statistical methods for the design of the SRAM array are pivotal to achieve satisfactory levels of silicon predictability. In this work, a method for the statistical design of the SRAM bit-cell is proposed. Not only does it provide a high yield, but also meets the specifications for the design constraints of stability, successful write, performance, leakage and area. The method consists of an optimization framework, which derives the optimal design parameters; i.e., the widths and lengths of the bit-cell transistors, which provide maximum immunity to the variations in the transistor's geometry and intrinsic threshold voltage fluctuations. The method is employed to obtain optimal designs in the 65nm, 45nm and 32nm technologies for different set of specifications. The optimality of the resultant designs is verified. The resultant optimal bit-cell designs in the 65nm, 45nm and 32nm technologies are analyzed to study the SRAM area and yield trade-offs associated with technology scaling. In order to achieve 50% scaling of the bit-cell area, at every technology node, two ways are proposed. The resultant designs are further investigated to understand, which mode of failure in the bit-cell becomes more dominant with technology scaling. In addition, the impact of voltage scaling on the bit-cell designs is also studied

Regular cell design approach considering lithography-induced process variations

The deployment delays for EUVL, forces IC design to continue using 193nm wavelength lithography with innovative and costly techniques in order to faithfully print sub-wavelength features and combat lithography induced process variations. The effect of the lithography gap in current and upcoming technologies is to cause severe distortions due to optical diffraction in the printed patterns and thus degrading manufacturing yield. Therefore, a paradigm shift in layout design is mandatory towards more regular litho-friendly cell designs in order to improve line pattern resolution. However, it is still unclear the amount of layout regularity that can be introduced and how to measure the benefits and weaknesses of regular layouts. This dissertation is focused on searching the degree of layout regularity necessary to combat lithography variability and outperform the layout quality of a design. The main contributions that have been addressed to accomplish this objective are: (1) the definition of several layout design guidelines to mitigate lithography variability; (2) the proposal of a parametric yield estimation model to evaluate the lithography impact on layout design; (3) the development of a global Layout Quality Metric (LQM) including a Regularity Metric (RM) to capture the degree of layout regularity of a layout implementation and; (4) the creation of different layout architectures exploiting the benefits of layout regularity to outperform line-pattern resolution, referred as Adaptive Lithography Aware Regular Cell Designs (ALARCs). The first part of this thesis provides several regular layout design guidelines derived from lithography simulations so that several important lithography related variation sources are minimized. Moreover, a design level methodology, referred as gate biasing, is proposed to overcome systematic layout dependent variations, across-field variations and the non-rectilinear gate effect (NRG) applied to regular fabrics by properly configuring the drawn transistor channel length. The second part of this dissertation proposes a lithography yield estimation model to predict the amount of lithography distortion expected in a printed layout due to lithography hotspots with a reduced set of lithography simulations. An efficient lithography hotspot framework to identify the different layout pattern configurations, simplify them to ease the pattern analysis and classify them according to the lithography degradation predicted using lithography simulations is presented. The yield model is calibrated with delay measurements of a reduced set of identical test circuits implemented in a CMOS 40nm technology and thus actual silicon data is utilized to obtain a more realistic yield estimation. The third part of this thesis presents a configurable Layout Quality Metric (LQM) that considering several layout aspects provides a global evaluation of a layout design with a single score. The LQM can be leveraged by assigning different weights to each evaluation metric or by modifying the parameters under analysis. The LQM is here configured following two different set of partial metrics. Note that the LQM provides a regularity metric (RM) in order to capture the degree of layout regularity applied in a layout design. Lastly, this thesis presents different ALARC designs for a 40nm technology using different degrees of layout regularity and different area overheads. The quality of the gridded regular templates is demonstrated by automatically creating a library containing 266 cells including combinational and sequential cells and synthesizing several ITC'99 benchmark circuits. Note that the regular cell libraries only presents a 9\% area penalty compared to the 2D standard cell designs used for comparison and thus providing area competitive designs. The layout evaluation of benchmark circuits considering the LQM shows that regular layouts can outperform other 2D standard cell designs depending on the layout implementation.Los continuos retrasos en la implementación de la EUVL, fuerzan que el diseño de IC se realice mediante litografía de longitud de onda de 193 nm con innovadoras y costosas técnicas para poder combatir variaciones de proceso de litografía. La gran diferencia entre la longitud de onda y el tamaño de los patrones causa severas distorsiones debido a la difracción óptica en los patrones impresos y por lo tanto degradando el yield. En consecuencia, es necesario realizar un cambio en el diseño de layouts hacia diseños más regulares para poder mejorar la resolución de los patrones. Sin embargo, todavía no está claro el grado de regularidad que se debe introducir y como medir los beneficios y los perjuicios de los diseños regulares. El objetivo de esta tesis es buscar el grado de regularidad necesario para combatir las variaciones de litografía y mejorar la calidad del layout de un diseño. Las principales contribuciones para conseguirlo son: (1) la definición de diversas reglas de diseño de layout para mitigar las variaciones de litografía; (2) la propuesta de un modelo para estimar el yield paramétrico y así evaluar el impacto de la litografía en el diseño de layout; (3) el diseño de una métrica para analizar la calidad de un layout (LQM) incluyendo una métrica para capturar el grado de regularidad de un diseño (RM) y; (4) la creación de diferentes tipos de layout explotando los beneficios de la regularidad, referidos como Adaptative Lithography Aware Regular Cell Designs (ALARCs). La primera parte de la tesis, propone las diversas reglas de diseño para layouts regulares derivadas de simulaciones de litografía de tal manera que las fuentes de variación de litografía son minimizadas. Además, se propone una metodología de diseño para layouts regulares, referida como "gate biasing" para contrarrestar las variaciones sistemáticas dependientes del layout, las variaciones en la ventana de proceso del sistema litográfico y el efecto de puerta no rectilínea para configurar la longitud del canal del transistor correctamente. La segunda parte de la tesis, detalla el modelo de estimación del yield de litografía para predecir mediante un número reducido de simulaciones de litografía la cantidad de distorsión que se espera en un layout impreso debida a "hotspots". Se propone una eficiente metodología que identifica los distintos patrones de un layout, los simplifica para facilitar el análisis de los patrones y los clasifica en relación a la degradación predecida mediante simulaciones de litografía. El modelo de yield se calibra utilizando medidas de tiempo de un número reducido de idénticos circuitos de test implementados en una tecnología CMOS de 40nm y de esta manera, se utilizan datos de silicio para obtener una estimación realista del yield. La tercera parte de este trabajo, presenta una métrica para medir la calidad del layout (LQM), que considera diversos aspectos para dar una evaluación global de un diseño mediante un único valor. La LQM puede ajustarse mediante la asignación de diferentes pesos para cada métrica de evaluación o modificando los parámetros analizados. La LQM se configura mediante dos conjuntos de medidas diferentes. Además, ésta incluye una métrica de regularidad (RM) para capturar el grado de regularidad que se aplica en un diseño. Finalmente, esta disertación presenta los distintos diseños ALARC para una tecnología de 40nm utilizando diversos grados de regularidad y diferentes impactos en área. La calidad de estos diseños se demuestra creando automáticamente una librería de 266 celdas incluyendo celdas combinacionales y secuenciales y, sintetizando diversos circuitos ITC'99. Las librerías regulares solo presentan un 9% de impacto en área comparado con diseños de celdas estándar 2D y por tanto proponiendo diseños competitivos en área. La evaluación de los circuitos considerando la LQM muestra que los diseños regulares pueden mejorar otros diseños 2D dependiendo de la implementación del layout