Impacto e compensação da largura de banda vídeo em amplificadores de potência de elevado rendimento

The aim of this work is to determine, quantify and model the performance degradation of wideband power amplifiers when subject to concurrent multiband excitation, with a particular focus on the average efficiency variation. The origins of this degradation are traced to two main transistor properties: the output baseband current generation by the nonlinear transconductance, and the input baseband current generation by the nonlinear gate-source capacitance variation. Each mechanism is analised separately, first by providing a qualitative and intuitive explanation of the processes that lead to the observed efficiency degradation, and then by deriving models that allow the prediction of the average efficiency dependence with the input signal bandwidth. The resulting knowledge was used to improve matching network design, in order to optimize baseband impedance terminations and prevent the efficiency degradation. The derived models were experimentally validated with several PA prototypes implemented with Gallium Nitride HEMT devices, using both conventional and optimized baseband impedance matching networks, achieving over 400MHz instantaneous bandwidth with uncompromised efficiency. The consolidation of the wideband degradation mechanisms described in this work are an important step for modelling and design of wideband, high-efficiency power amplifiers in current and future concurrent multi-band communication systems.O objetivo deste trabalho é determinar, quantificar e modelar a degradação do desempenho de amplificadores de banda-larga quando submetidos a excitação multi-banda concorrente, com particular ênfase na variação do rendimento energético. As origens desta degradação são devidas a duas das principais propriedades do transístor: a geração de corrente em banda-base na saída pela variação não-linear da transcondutância, e a geração de corrente de banda-base na entrada pela variação não-linear da capacidade interna porta-fonte. Cada um destes mecanismos é analisado isoladamente, primeiro por uma explicação qualitativa e intuitiva dos processos que levam à degradação de eficiência observada e, em seguida, através da derivação de modelos que permitem a previsão da degradação do rendimento médio em função da largura de banda do sinal de entrada. O conhecimento resultante foi utilizado para melhorar o desenvolvimento de malhas de adaptação, por forma a otimizar as terminações de impedância em banda-base e prevenir a degradação do rendimento. Os modelos desenvolvidos foram validados experimentalmente em vários amplificadores de potência implementados com transístores de tecnologia GaN HEMT, utilizando malhas de adaptação convencionais e otimizadas, onde se obteve 400MHz de largura de banda instantânea sem degradação do rendimento. A consolidação dos mecanismos de degradação descritos neste trabalho são um importante passo para a modelação e projeto de amplificadores de elevado rendimento e largura-debanda para os sistemas de comunicação multi-banda concorrente convencionais e do futuro.Programa Doutoral em Engenharia Eletrotécnic

Spectrum Modeling of Out-of-Band Intermodulation for Dual-Band RF Amplifiers in OFDM Modulation

Dual-band RF amplifiers play increasingly important roles in next-generation mobile communication systems including 5G, and the out-of-band intermodulation products are often not negligible since they generate interference to adjacent channels. In this article, following our previous modeling of cross-modulation for amplified dual-band signals, an analytical expression of out-of-band intermodulation for dual-band orthogonal frequency-division multiplexing signals is derived using the third-order intercept points IP3. The experimental measurement results validate the proposed analytical expression

Millimeter-Wave Concurrent Dual-Band Sige Bicmos Rfic Phased-Array Transmitter and Components

A concurrent dual-band phased-array transmitter (TX) and its constituent components are studied in this dissertation. The TX and components are designed for the unlicensed bands, 22–29 and 57–64 GHz, using a 0.18-μm BiCMOS technology. Various studies have been done to design the components, which are suitable for the concurrent dual-band phased-array TX. The designed and developed components in this study are an attenuator, switch, phase shifter, power amplifier and power divider. Attenuators play a key role in tailoring main beam and side-lobe patterns in a phased-array TX. To perform the function in the concurrent dual-band phased-array TX, a 22–29 and 57–64 GHz concurrent dual-band attenuator with low phase variations is designed. Signal detection paths are employed at the output of the phased-array TX to monitor the phase and amplitude deviations/errors, which are larger in the high-frequency design. The detected information enables the TX to have an accurate beam tailoring and steering. A 10–67 GHz wide-band attenuator, covering the dual bands, is designed to manipulate the amplitude of the detected signal. New design techniques for an attenuator with a wide attenuation range and improved flatness are proposed. Also, a topology of dual-function circuit, attenuation and switching, is proposed. The switching turns on and off the detection path to minimize the leakages while the path is not used. Switches are used to minimize the number of components in the phased-array transceiver. With the switches, some of the bi-directional components in the transceiver such as an attenuator, phase shifter, filter, and antenna can be shared by the TX and receiver (RX) parts. In this dissertation, a high-isolation switch with a band-pass filtering response is proposed. The band-pass filtering response suppresses the undesired harmonics and intermodulation products of the TX. Phase shifters are used in phased-array TXs to steer the direction of the beam. A 24-GHz phase shifter with low insertion loss variation is designed using a transistor-body-floating technique for our phased-array TX. The low insertion loss variation minimizes the interference in the amplitude control operation (by attenuator or variable gain amplifier) in phased-array systems. BJTs in a BiCMOS process are characterized across dc to 67 GHz. A novel characterization technique, using on-wafer calibration and EM-based de-embedding both, is proposed and its accuracy at high frequencies is verified. The characterized BJT is used in designing the amplifiers in the phased-array TX. A concurrent dual-band power amplifier (PA) centered at 24 and 60 GHz is proposed and designed for the dual-band phased-array TX. Since the PA is operating in the dual frequency bands simultaneously, significant linearity issues occur. To resolve the problems, a study to find significant intermodulation (IM) products, which increase the third intermodulation (IM3) products most, has been done. Also, an advanced simulation and measurement methodology using three fundamental tones is proposed. An 8-way power divider with dual-band frequency response of 22–29 and 57–64 GHz is designed as a constituent component of the phased-array TX

Evaluating GaN Doherty architectures for 4G Picocells, WiMax and microwave backhaul links

This paper evaluates the Doherty power amplifier architecture in terms of linearity, efficiency and design solutions. As case study four different prototypes are presented, one for 4G Picocells at 2.1 GHz, one for WiMax applications at 3.5 GHz and two for point-to-point microwave backhaul radiolinks at 7 GHz. Experimental results together with design guidelines are discussed addressing strengths and weaknesses of the Doherty architectur

Dual-Band and Broadband RF Power Amplifiers for Concurrent Signal Transmission

Broadband power amplifiers are becoming increasingly important for communications andradar phased array applications. Amplifying concurrent signals allows for increased data through- put with carrier aggregation and improved radar tracking performance, among other benefits. However, non-concurrent broadband amplifier design is limited in performance by fundamental matching limitations, and suffers further in the concurrent mode due to signal mixing. To reduce the cost of phased arrays, a low-cost GaN-on-Si technology is first investigated on which broadband power amplifiers are designed and fabricated. Various passive structures are simulated to validate process stack-up simplifications, along with the design and characterization of a narrowband proof-of-concept X-band power amplifier. Fundamental limitations are summarized and utilized to develop a design procedure for multi-stage power amplifiers with increased gain for phased array applications. This procedure is confirmed with a fabricated matching network. These results are then used in dual-band and broadband power amplifiers designs, which are fabricated with commercially available GaAs and GaN technologies. Hybrid and MMIC implementations in both cover 2-18 GHz in aggregate. The power amplifier characterization focuses on comparing each implementation in the non- concurrent and concurrent mode to understand the effect each power amplifier has on signal ampli- fication. A new broadband power amplifier architecture is developed to improve the performance of broadband power amplifier amplifying concurrent signals. Results indicate that a PA with this architecture can achieve similar power and efficiency as compared to a standard broadband PA, whereas linearity can be improved and/or simplified using this approach.</p

Wireless power transmission: R&D activities within Europe

Wireless power transmission (WPT) is an emerging technology that is gaining increased visibility in recent years. Efficient WPT circuits, systems and strategies can address a large group of applications spanning from batteryless systems, battery-free sensors, passive RF identification, near-field communications, and many others. WPT is a fundamental enabling technology of the Internet of Things concept, as well as machine-to-machine communications, since it minimizes the use of batteries and eliminates wired power connections. WPT technology brings together RF and dc circuit and system designers with different backgrounds on circuit design, novel materials and applications, and regulatory issues, forming a cross disciplinary team in order to achieve an efficient transmission of power over the air interface. This paper aims to present WPT technology in an integrated way, addressing state-of-the-art and challenges, and to discuss future R&D perspectives summarizing recent activities in Europe.The work of N. Borges Carvalho and A. J. S. Soares Boaventura was supported by the Portuguese Foundation for Science and Technology (FCT) under Project CREATION EXCL/EEI-TEL/0067/2012 and Doctoral Scholarship SFRH/BD/80615/2011. The work of H. Rogier was supported by BELSPO through the IAP Phase VII BESTCOM project and the Fund for Scientific Research-Flanders (FWO-V). The work of A. Georgiadis and A. Collado was supported by the European Union (EU) under Marie Curie FP7-PEOPLE-2009-IAPP 251557 and the Spanish Ministry of Economy and Competitiveness Project TEC 2012-39143. The work of J. A. García and M. N. Ruíz was supported by the Spanish Ministries MICINN and MINECO under FEDER co-funded Project TEC2011-29126-C03-01 and Project CSD2008-00068. The work of J. Kracek and M. Mazanek was supported in part by the Czech Ministry of Education Youth and Sports under Project OC09075–Novel Emerging Wireless Systems