Lithographic technology for microwave integrated circuits

Conductive lithographic films (CLFs) have been developed primarily as substitutes for resin/laminate boards, which share properties with the metallisation patterns used in planar microwave integrated circuits (MICs). The authors examine the microwave properties of the films and show that, although the losses are greater, they have potential as an alternative to the traditional manufacturing process of MICs

Improvement of detectability for CMOS floating gate defects in supply current test

We already proposed a supply current test method for detecting floating gate defects in CMOS ICs. In the method, increase of the supply current caused by defects is promoted by superposing a sinusoidal signal on the supply voltage. In this study, we propose one way to improve detectability of the method for the defects. They are detected by analyzing the frequency of supply current and judging whether secondary harmonics of the sinusoidal signal exist or not. Effectiveness of our way is confirmed by some experiments.</p

An approach to dynamic power consumption current testing of CMOS ICs

© 1995 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.I/sub DDQ/ testing is a powerful strategy for detecting defects that do not alter the logic behavior of CMOS ICs. Such a technique is very effective especially in the detection of bridging defects although some opens can be also detected. However, an important set of open and parametric defects escape quiescent power supply current testing because they prevent current elevation. Extending the consumption current testing time, from the static period to the dynamic one (i.e. considering the transient current), defects not covered with I/sub DDQ/ can be detected. Simulations using an on-chip sensor show that this technique can reach a high coverage for defects preventing current and also for those raising the static power consumption.Peer ReviewedPostprint (published version

Supply Current Diagnosis in VLSI

This paper presents a technique based upon the power supply current signature (cd) which allows for the testing of mixed-signal systems, in situ. Through experiments with a microprocessor, the cd is shown to contain important information concerning the operational status of the system which may be easily extracted using approaches based on statistical signal detection theory. The fault-detection performance of these techniques is compared to that achieved through auto-regressive modeling of the cd

Iddq testing of a CMOS 10-bit charge scaling digital-to-analog converter

This work presents an effective built-in current sensor (BICS), which has a very small impact on the performance of the circuit under test (CUT). The proposed BICS works in two-modes the normal mode and the test mode. In the normal mode the BICS is isolated from the CUT due to which there is no performance degradation of the CUT. In the testing mode, our BICS detects the abnormal current caused by permanent manufacturing defects. Further more our BICS can also distinguish the type of defect induced (Gate-source short, source-drain short and drain-gate short). Our BICS requires neither an external voltage source nor current source. Hence the BICS requires less area and is more efficient than the conventional current sensors. The circuit under test is a 10-bit digital to analog converter using charge-scaling architecture

Quiescent current testing of CMOS data converters

Power supply quiescent current (IDDQ) testing has been very effective in VLSI circuits designed in CMOS processes detecting physical defects such as open and shorts and bridging defects. However, in sub-micron VLSI circuits, IDDQ is masked by the increased subthreshold (leakage) current of MOSFETs affecting the efficiency of I¬DDQ testing. In this work, an attempt has been made to perform robust IDDQ testing in presence of increased leakage current by suitably modifying some of the test methods normally used in industry. Digital CMOS integrated circuits have been tested successfully using IDDQ and IDDQ methods for physical defects. However, testing of analog circuits is still a problem due to variation in design from one specific application to other. The increased leakage current further complicates not only the design but also testing. Mixed-signal integrated circuits such as the data converters are even more difficult to test because both analog and digital functions are built on the same substrate. We have re-examined both IDDQ and IDDQ methods of testing digital CMOS VLSI circuits and added features to minimize the influence of leakage current. We have designed built-in current sensors (BICS) for on-chip testing of analog and mixed-signal integrated circuits. We have also combined quiescent current testing with oscillation and transient current test techniques to map large number of manufacturing defects on a chip. In testing, we have used a simple method of injecting faults simulating manufacturing defects invented in our VLSI research group. We present design and testing of analog and mixed-signal integrated circuits with on-chip BICS such as an operational amplifier, 12-bit charge scaling architecture based digital-to-analog converter (DAC), 12-bit recycling architecture based analog-to-digital converter (ADC) and operational amplifier with floating gate inputs. The designed circuits are fabricated in 0.5 μm and 1.5 μm n-well CMOS processes and tested. Experimentally observed results of the fabricated devices are compared with simulations from SPICE using MOS level 3 and BSIM3.1 model parameters for 1.5 μm and 0.5 μm n-well CMOS technologies, respectively. We have also explored the possibility of using noise in VLSI circuits for testing defects and present the method we have developed

Power supply partitioning for placement of built-in current sensors for IDDQ testing

IDDQ testing has been a very useful test screen for CMOS circuits. However, with each technology node the background leakage of chips is rapidly increasing. As a result it is becoming more difficult to distinguish between faulty and fault-free chips using IDDQ testing. Power supply partitioning has been proposed to increase test resolution by partitioning the power supply network, such that each partition has a relatively small defect-free IDDQ level. However, at present no practical partitioning strategy is available. The contribution of this thesis is to present a practical power supply partitioning strategy. We formulate various versions of the power supply partitioning problem that are likely to be of interest depending on the constraints of the chip design. Solutions to all the variants of the problem are presented. The basic idea behind all solutions is to abstract the power topology of the chip as a flow network. We then use flow techniques to find the min-cut of the transformed network to get solutions to our various problem formulations. Experimental results for benchmark circuits verify the feasibility of our solution methodology. The problem formulations will give complete flexibility to a test engineer to decide which factors cannot be compromised (e.g. area of BICS, test quality, etc) for a particular design and accordingly choose the appropriate problem formulation. The application of this work will be the first step in the placement of Built-In Current Sensors for IDDQ testing

Test estructural i predictiu per a circuits RF CMOS

En aquesta tesi s’ha desenvolupat una tècnica de test que permet testar un LNA i un mesclador, situats en el capçal RF d’un receptor CMOS, en una configuració de test semblant al mode normal de funcionament. La circuiteria necessària per a implementar aquesta tècnica consta d’un generador IF, per a generar el senyal IF de test, i d’un mesclador auxiliar, per a obtenir el senyal RF de test. Les observables de test escollides han estat l’amplitud de la tensió de sortida del mesclador i el component DC del corrent de consum. S’ha estudiat l’eficàcia de la tècnica de test proposada utilitzant les estratègies de test estructural i predictiu, mitjançant simulacions i mesures experimentals. La seva eficàcia és comparable a altres tècniques de test existents, però l’àrea addicional dedicada a la circuiteria test és inferior.En esta tesis se ha desarrollado una técnica de test que permite verificar un LNA y un mezclador, situados en el cabezal RF de un receptor CMOS, en una configuración de test similar al modo normal de funcionamiento. Los circuitos necesarios para implementar esta técnica son: un generador IF, que permite generar la señal IF de test, y un mezclador auxiliar, para obtener la señal RF de test. Las observables de test seleccionadas han sido la amplitud de la tensión de salida y la componente DC de la corriente de consumo. Se ha estudiado la eficacia de la técnica propuesta usando las estrategias de test estructural y predictiva, mediante simulaciones y medidas experimentales. Su eficacia es comparable a otras técnicas existentes, pero el área dedicada a la circuiteria de test es inferior.This PhD thesis develops a test technique intended for the RF front end of CMOS integrated receivers. This test technique allows testing individually the building blocks of the receiver in a sequential way. The test mode configuration of each block is similar to the normal mode operation. The auxiliary circuitry required to generate the test stimuli consists of an IF generator, which generates the IF test signal, and an auxiliary mixer that produces the RF test signal by mixing the IF test signal with the local oscillator signal. The test observables selected for the test are the voltage amplitude after the IF amplifier, and the DC component of the supply current in each block. The capability of the proposed test technique to perform structural and predictive test strategies has been validated by simulation and experimentally. Its efficiency is comparable to other existing techniques, but the silicon area overhead is lower

Sensors i estratègies de test de circuits digitals CMOS per vigilància del consum

El objetivo de la tesis es realizar aportaciones en el campo de las estrategias de test basadas en la vigilancia del consumo quiescente de los circuitos integrados CMOS y de los sensores utilizados para dicho fin (test de corriente o test iddq). Para ello se analiza en primer lugar el estado del arte en el diseño de sensores para el test IDDQ y se extraen criterios para la evaluacion de la calidad de dichos sensores. En la tesis se propone un nuevo tipo de sensor integrado (proportional built-in current sensor) que utiliza como elemento transductor un transistor bipolar compatible con la tecnologia CMOS. Se caracteriza tambien su comportamiento estetico y dinamico y se realizan pruebas con circuitos experimentales para validar los analisis realizados.En la tesis se proponen dos metodos originales para el test IDDQ mediante sensores externos al circuito que se este verificando (cut): el primero se basa en la desconexion de la alimentacion del cut y en la observacion del comportamiento de sus salidas. El segundo metodo se basa en el analisis de la evolucion de la tension en el nodo de alimentacion de un CUT cuando se le aplica un conjunto de vectores de test estando el circuito alimentado por un condensador. Ambos metodos propuestos requieren un interruptor para la alimentacion del CUT con unas caracteristicas especiales. Por ello, se ha diseñado un nuevo tipo de interruptor que cumple con las especificaciones de baja resistencia en estado de conduccion y baja inyeccion de carga en el paso del estado de no conduccion al de conduccion. Finalmente, los metodos propuestos se han validado experimentalmente al ser implementados en una maquina de test convencional verificandose su efectividad en la deteccion de los defectos de multiples circuitos integrados