A PVT tolerant voltage-controlled oscillator for automotive applications

This thesis focusses on the development of an integrated oscillator for automotive applications. The oscillator operates based on the Barkhausen criterion, which is a mathematical requirement used in electronics to predict whether a linear electronic circuit will oscillate. In this thesis, a voltage-controlled oscillator is designed for increased performance under various process, voltage and temperature (PVT) conditions. By applying a voltage reference block, the output frequency of 0.5MHz, 0.75MHz, 1MHz or 1.25MHz can be obtained. In order to compensate for the variations at PVT corners, the trimming technology is applied to increase the accuracy. The supply voltage is considered to be varying between 2.1V and 5.5V while the temperature range is -40oC -125oC.Includes bibliographical references

Design of an Ultra-Low Power RTC for the IoT

The Internet of Things is growing at an exponential rate. This new perception of reality is being researched even further nowadays because society is starting to develop an interest on these technologies. Market potential is increasing even further, since the foreseeable implementations are diverse and still to be detected. The future applications for the IoT are enthusiastic and they will increase the overall quality of life of the citizens of the world. Developing a component that is crucial for the sustainability of this implementation is the task that truly motivates the intended work for this project. Designing the full-custom circuitry and physical layout of a Real Time Clock becomes a job that has a lot of minor details that need considerable attention. These technicalities truly tone the developers skill and knowledge of different design principles. Besides, developing the solution using subthreshold CMOS techniques will put emphasis on different technological procedures. Producing devices that are heavily dependent on PVT variations, operational frequency and power consumption define this new task, that needs a stable approach to all these diverse figure of merits, even though they are all interconnected. The study and understanding of these different approaches allows for a more complex in depth grasp of this recent intriguing proceedings

Rf Power Amplifier And Oscillator Design For Reliability And Variability

CMOS RF circuit design has been an ever-lasting research field. It gained so much attention since RF circuits have high mobility and wide band efficiency, while CMOS technology has the advantage of low cost and better capability of integration. At the same time, IC circuits never stopped scaling down for the recent many decades. Reliability issues with RF circuits have become more and more severe with device scaling down: reliability effects such as gate oxide break down, hot carrier injection, negative bias temperature instability, have been amplified as the device size shrinks. Process variability issues also become more predominant as the feature size decreases. With these insights provided, reliability and variability evaluations on typical RF circuits and possible compensation techniques are highly desirable. In this work, a class E power amplifier is designed and laid out using TSMC 0.18 µm RF technology and the chip was fabricated. Oxide stress and hot electron tests were carried out at elevated supply voltage, fresh measurement results were compared with different stress conditions after 10 hours. Test results matched very well with mixed mode circuit simulations, proved that hot carrier effects degrades PA performances like output power, power efficiency, etc. Self- heating effects were examined on a class AB power amplifier since PA has high power operations. Device temperature simulation was done both in DC and mixed mode level. Different gate biasing techniques were analyzed and their abilities to compensate output power were compared. A simple gate biasing circuit turned out to be efficient to compensate selfheating effects under different localized heating situations. iv Process variation was studied on a classic Colpitts oscillator using Monte-Carlo simulation. Phase noise was examined since it is a key parameter in oscillator. Phase noise was modeled using analytical equations and supported by good match between MATLAB results and ADS simulation. An adaptive body biasing circuit was proposed to eliminate process variation. Results from probability density function simulation demonstrated its capability to relieve process variation on phase noise. Standard deviation of phase noise with adaptive body bias is much less than the one without compensation. Finally, a robust, adaptive design technique using PLL as on-chip sensor to reduce Process, Voltage, Temperature (P.V.T.) variations and other aging effects on RF PA was evaluated. The frequency and phase of ring oscillator need to be adjusted to follow the frequency and phase of input in PLL no matter how the working condition varies. As a result, the control signal of ring oscillator has to fluctuate according to the working condition, reflecting the P.V.T changes. RF circuits suffer from similar P.V.T. variations. The control signal of PLL is introduced to RF circuits and converted to the adaptive tuning voltage for substrate bias. Simulation results illustrate that the PA output power under different variations is more flat than the one with no compensation. Analytical equations show good support to what has been observed

Robust Design With Increasing Device Variability In Sub-Micron Cmos And Beyond: A Bottom-Up Framework

My Ph.D. research develops a tiered systematic framework for designing process-independent and variability-tolerant integrated circuits. This bottom-up approach starts from designing self-compensated circuits as accurate building blocks, and moves up to sub-systems with negative feedback loop and full system-level calibration. a. Design methodology for self-compensated circuits My collaborators and I proposed a novel design methodology that offers designers intuitive insights to create new topologies that are self-compensated and intrinsically process-independent without external reference. It is the first systematic approaches to create "correct-by-design" low variation circuits, and can scale beyond sub-micron CMOS nodes and extend to emerging non-silicon nano-devices. We demonstrated this methodology with an addition-based current source in both 180nm and 90nm CMOS that has 2.5x improved process variation and 6.7x improved temperature sensitivity, and a GHz ring oscillator (RO) in 90nm CMOS with 65% reduction in frequency variation and 85ppm/oC temperature sensitivity. Compared to previous designs, our RO exhibits the lowest temperature sensitivity and process variation, while consuming the least amount of power in the GHz range. Another self-compensated low noise amplifiers (LNA) we designed also exhibits 3.5x improvement in both process and temperature variation and enhanced supply voltage regulation. As part of the efforts to improve the accuracy of the building blocks, I also demonstrated experimentally that due to "diversification effect", the upper bound of circuit accuracy can be better than the minimum tolerance of on-chip devices (MOSFET, R, C, and L), which allows circuit designers to achieve better accuracy with less chip area and power consumption. b. Negative feedback loop based sub-system I explored the feasibility of using high-accuracy DC blocks as low-variation "rulers-on-chip" to regulate high-speed high-variation blocks (e.g. GHz oscillators). In this way, the trade-off between speed (which can be translated to power) and variation can be effectively de-coupled. I demonstrated this proposed structure in an integrated GHz ring oscillators that achieve 2.6% frequency accuracy and 5x improved temperature sensitivity in 90nm CMOS. c. Power-efficient system-level calibration To enable full system-level calibration and further reduce power consumption in active feedback loops, I implemented a successive-approximation-based calibration scheme in a tunable GHz VCO for low power impulse radio in 65nm CMOS. Events such as power-up and temperature drifts are monitored by the circuits and used to trigger the need-based frequency calibration. With my proposed scheme and circuitry, the calibration can be performed under 135pJ and the oscillator can operate between 0.8 and 2GHz at merely 40[MICRO SIGN]W, which is ideal for extremely power-and-cost constraint applications such as implantable biomedical device and wireless sensor networks

Ultra-Low-Power Wake-up Clock Design for SoC Applications

This thesis studies how to design an ultra-low-power wake-up clock circuit for SoCapplications that essentially consists of a resistor based reference circuit, switched-capacitor branch, an ultra-low-power amplifier, a VCO and a non-overlapping clockphase generator circuit. The circuit is designed in 180-nm CMOS technology usingCAD software for circuit design, layout design, pre and post-layout simulations.At first, a brief study of different clock-generation circuit architectures is made,wherein their merits and de-merits are discussed. This is followed by a study ofan ultra-low-power amplifier, ring-oscillator-based VCO, non-overlapping clockcircuits, the bias generation circuit and the current reference circuit. Additionally,a reference current chopping technique that further improves temperature stabilityis also described. Later, the report discusses the design and simulations of theactual implementation. Analysis of the design with regards to power consumption,temperature stability and layout area are carried out. The circuit operates at8.254kHz consuming 70.4nW with a temperature stability of 7.35ppm/◦C in thetemperature range of -40◦C to 75◦C. The final layout takes an area of 0.153mm2.The final design is analysed for its functionality at various process, voltage andtemperature corners. Future improvements in the current design are also discussedat the end of this report

RF Circuit Designs for Reliability and Process Variability Resilience

Complementary metal oxide semiconductor (CMOS) radio frequency (RF) circuit design has been an ever-lasting research field. It has gained so much attention since RF circuits offer high mobility and wide-band efficiency, while CMOS technology provides the advantage of low cost and high integration capability. At the same time, CMOS device size continues to scale to the nanometer regime. Reliability issues with RF circuits have become more challenging than ever before. Reliability mechanisms, such as gate oxide breakdown, hot carrier injection, negative bias temperature instability, have been amplified as the device size shrinks. In addition, process variability becomes a new design paradigm in modern RF circuits. In this Ph.D. work, a class F power amplifier (PA) was designed and analyzed using TSMC 180nm process technology. Its pre-layout and post-layout performances were compared. Post-layout parasitic effect decreases the output power and power-added efficiency. Physical insight of hot electron impact ionization and device self-heating was examined using the mixed-mode device and circuit simulation to mimic the circuit operating environment. Hot electron effect increases the threshold voltage and decreases the electron mobility of an n-channel transistor, which in turn decreases the output power and power-added efficiency of the power amplifier, as evidenced by the RF circuit simulation results. The device self-heating also reduces the output power and power-added efficiency of the PA. The process, voltage, and temperature (PVT) effects on a class AB power amplifier were studied. A PVT compensation technique using a current-source as an on-chip sensor was developed. The adaptive body bias design with the current sensing technique makes the output power and power-added efficiency much less sensitive to process variability, supply voltage variation, and temperature fluctuation, predicted by our derived analytical equations which are also verified by Agilent Advanced Design System (ADS) circuit simulation. Process variations and hot electron reliability on the mixer performance were also evaluated using different process corner models. The conversion gain and noise figure were modeled using analytical equations, supported by ADS circuit simulation results. A process invariant current source circuit was developed to eliminate process variation effect on circuit performance. Our conversion gain, noise figure, and output power show robust performance against PVT variations compared to those of a traditional design without using the current sensor, as evidenced by Monte Carlo statistical simulation. Finally, semiconductor process variations and hot electron reliability on the LC-voltage controlled oscillator (VCO) performance was evaluated using different process models. In our newly designed VCO, the phase noise and power consumptions are resilient against process variation effect due to the use of on-chip current sensing and compensation. Our Monte-Carlo simulation and analysis demonstrate that the standard deviation of phase noise in the new VCO design reduces about five times than that of the conventional design

Millimeter-Wave CMOS Digitally Controlled Oscillators for Automotive Radars

All-Digital-Phase-Locked-Loops (ADPLLs) are ideal for integrated circuit implementations and effectively generate frequency chirps for Frequency-Modulated-Continuous-Wave (FMCW) radar. This dissertation discusses the design requirements for integrated ADPLL, which is used as chirp synthesizer for FMCW automotive radar and focuses on an analysis of the ADPLL performance based on the Digitally-Controlled-Oscillator (DCO) design parameters and the ADPLL configuration. The fundamental principles of the FMCW radar are reviewed and the importance of linear DCO for reliable operation of the synthesizer is discussed. A novel DCO, which achieves linear frequency tuning steps is designed by arranging the available minimum Metal-Oxide-Metal (MoM) capacitor in unique confconfigurations. The DCO prototype fabricated in 65 nm CMOS fullls the requirements of the 77 GHz automotive radar. The resultant linear DCO characterization can effectively drive a chirp generation system in complete FMCW automotive radar synthesizer

An Analog Multiphase Self-Calibrating DLL to Minimize the Effects of Process, Supply Voltage, and Temperature Variations

Delay locked loops have been found to be useful tools in such applications as computing, TDCs, and communications. These system can be found in space exploration vehicles and satellites, which operate in extreme environments. Unfortunately, in these environments supply voltage and temperature will not be constant, therefore they must be under consideration when designing a DLL. Furthermore, solar radiation in conjunction with the varying environmental aspects, could cause the delay locked loop to lose it locked state. Delay locked loops are inherently good at tracking these environmental aspects, but in order to do so, the voltage controlled delay line must exhibit a very large gain, which translates to a large capture range. Assuming charged particles hit a key node in the DLL (e.g. the control voltage), the DLL would lose lock and would have to recapture it. Depending on the severity of the uctuation, this relocking process could easily take on the order of many microseconds assuming the bandwidth was kept low to minimize jitter. To date, no delay locked loops have been published for extreme environment applications. In many other extreme environment circuits, calibration techniques have been applied to minimize the environmental effects. Whereas there have been multiple calibration methods published related to delay locked loops, none of them were intended for extreme environments. Furthermore, none of these methods are directly suitable for an analog multiphase delay locked loop. The self-calibrating DLL in this work includes an all digital calibration circuit, as well as a system transient monitor. The coarse calibration helps minimize global process, voltage, and temperature errors for an analog multiphase DLL. The system monitor is used to detect any transients that might cause the DLL to unlock, which could be used to allow the DLL to be recalibrated to the new environmental conditions. The presented measurement results will demonstrate that the DLL can be used in extreme environments such as space, or other extreme environment applications