Quiescent current testing of CMOS data converters

Power supply quiescent current (IDDQ) testing has been very effective in VLSI circuits designed in CMOS processes detecting physical defects such as open and shorts and bridging defects. However, in sub-micron VLSI circuits, IDDQ is masked by the increased subthreshold (leakage) current of MOSFETs affecting the efficiency of I¬DDQ testing. In this work, an attempt has been made to perform robust IDDQ testing in presence of increased leakage current by suitably modifying some of the test methods normally used in industry. Digital CMOS integrated circuits have been tested successfully using IDDQ and IDDQ methods for physical defects. However, testing of analog circuits is still a problem due to variation in design from one specific application to other. The increased leakage current further complicates not only the design but also testing. Mixed-signal integrated circuits such as the data converters are even more difficult to test because both analog and digital functions are built on the same substrate. We have re-examined both IDDQ and IDDQ methods of testing digital CMOS VLSI circuits and added features to minimize the influence of leakage current. We have designed built-in current sensors (BICS) for on-chip testing of analog and mixed-signal integrated circuits. We have also combined quiescent current testing with oscillation and transient current test techniques to map large number of manufacturing defects on a chip. In testing, we have used a simple method of injecting faults simulating manufacturing defects invented in our VLSI research group. We present design and testing of analog and mixed-signal integrated circuits with on-chip BICS such as an operational amplifier, 12-bit charge scaling architecture based digital-to-analog converter (DAC), 12-bit recycling architecture based analog-to-digital converter (ADC) and operational amplifier with floating gate inputs. The designed circuits are fabricated in 0.5 μm and 1.5 μm n-well CMOS processes and tested. Experimentally observed results of the fabricated devices are compared with simulations from SPICE using MOS level 3 and BSIM3.1 model parameters for 1.5 μm and 0.5 μm n-well CMOS technologies, respectively. We have also explored the possibility of using noise in VLSI circuits for testing defects and present the method we have developed

Developing Model-Based Design Evaluation for Pipelined A/D Converters

This paper deals with a prospective approach of modeling, design evaluation and error determination applied to pipelined A/D converter architecture. In contrast with conventional ADC modeling algorithms targeted to extract the maximum ADC non-linearity error, the innovative approach presented allows to decompose magnitudes of individual error sources from a measured or simulated response of an ADC device. Design Evaluation methodology was successfully applied to Nyquist rate cyclic converters in our works [13]. Now, we extend its principles to pipelined architecture. This qualitative decomposition can significantly contribute to the ADC calibration procedure performed on the production line in term of integral and differential nonlinearity. This is backgrounded by the fact that the knowledge of ADC performance contributors provided by the proposed method helps to adjust the values of on-chip converter components so as to equalize (and possibly minimize) the total non-linearity error. In this paper, the design evaluation procedure is demonstrated on a system design example of pipelined A/D converter. Significant simulation results of each stage of the design evaluation process are given, starting from the INL performance extraction proceeded in a powerful Virtual Testing Environment implemented in Maple™ software and finishing by an error source simulation, modeling of pipelined ADC structure and determination of error source contribution, suitable for a generic process flow

Design and debugging of multi-step analog to digital converters

With the fast advancement of CMOS fabrication technology, more and more signal-processing functions are implemented in the digital domain for a lower cost, lower power consumption, higher yield, and higher re-configurability. The trend of increasing integration level for integrated circuits has forced the A/D converter interface to reside on the same silicon in complex mixed-signal ICs containing mostly digital blocks for DSP and control. However, specifications of the converters in various applications emphasize high dynamic range and low spurious spectral performance. It is nontrivial to achieve this level of linearity in a monolithic environment where post-fabrication component trimming or calibration is cumbersome to implement for certain applications or/and for cost and manufacturability reasons. Additionally, as CMOS integrated circuits are accomplishing unprecedented integration levels, potential problems associated with device scaling – the short-channel effects – are also looming large as technology strides into the deep-submicron regime. The A/D conversion process involves sampling the applied analog input signal and quantizing it to its digital representation by comparing it to reference voltages before further signal processing in subsequent digital systems. Depending on how these functions are combined, different A/D converter architectures can be implemented with different requirements on each function. Practical realizations show the trend that to a first order, converter power is directly proportional to sampling rate. However, power dissipation required becomes nonlinear as the speed capabilities of a process technology are pushed to the limit. Pipeline and two-step/multi-step converters tend to be the most efficient at achieving a given resolution and sampling rate specification. This thesis is in a sense unique work as it covers the whole spectrum of design, test, debugging and calibration of multi-step A/D converters; it incorporates development of circuit techniques and algorithms to enhance the resolution and attainable sample rate of an A/D converter and to enhance testing and debugging potential to detect errors dynamically, to isolate and confine faults, and to recover and compensate for the errors continuously. The power proficiency for high resolution of multi-step converter by combining parallelism and calibration and exploiting low-voltage circuit techniques is demonstrated with a 1.8 V, 12-bit, 80 MS/s, 100 mW analog to-digital converter fabricated in five-metal layers 0.18-µm CMOS process. Lower power supply voltages significantly reduce noise margins and increase variations in process, device and design parameters. Consequently, it is steadily more difficult to control the fabrication process precisely enough to maintain uniformity. Microscopic particles present in the manufacturing environment and slight variations in the parameters of manufacturing steps can all lead to the geometrical and electrical properties of an IC to deviate from those generated at the end of the design process. Those defects can cause various types of malfunctioning, depending on the IC topology and the nature of the defect. To relive the burden placed on IC design and manufacturing originated with ever-increasing costs associated with testing and debugging of complex mixed-signal electronic systems, several circuit techniques and algorithms are developed and incorporated in proposed ATPG, DfT and BIST methodologies. Process variation cannot be solved by improving manufacturing tolerances; variability must be reduced by new device technology or managed by design in order for scaling to continue. Similarly, within-die performance variation also imposes new challenges for test methods. With the use of dedicated sensors, which exploit knowledge of the circuit structure and the specific defect mechanisms, the method described in this thesis facilitates early and fast identification of excessive process parameter variation effects. The expectation-maximization algorithm makes the estimation problem more tractable and also yields good estimates of the parameters for small sample sizes. To allow the test guidance with the information obtained through monitoring process variations implemented adjusted support vector machine classifier simultaneously minimize the empirical classification error and maximize the geometric margin. On a positive note, the use of digital enhancing calibration techniques reduces the need for expensive technologies with special fabrication steps. Indeed, the extra cost of digital processing is normally affordable as the use of submicron mixed signal technologies allows for efficient usage of silicon area even for relatively complex algorithms. Employed adaptive filtering algorithm for error estimation offers the small number of operations per iteration and does not require correlation function calculation nor matrix inversions. The presented foreground calibration algorithm does not need any dedicated test signal and does not require a part of the conversion time. It works continuously and with every signal applied to the A/D converter. The feasibility of the method for on-line and off-line debugging and calibration has been verified by experimental measurements from the silicon prototype fabricated in standard single poly, six metal 0.09-µm CMOS process

Design of a Programmable Passive SoC for Biomedical Applications Using RFID ISO 15693/NFC5 Interface

Low power, low cost inductively powered passive biotelemetry system involving fully customized RFID/NFC interface base SoC has gained popularity in the last decades. However, most of the SoCs developed are application specific and lacks either on-chip computational or sensor readout capability. In this paper, we present design details of a programmable passive SoC in compliance with ISO 15693/NFC5 standard for biomedical applications. The integrated system consists of a 32-bit microcontroller, a sensor readout circuit, a 12-bit SAR type ADC, 16 kB RAM, 16 kB ROM and other digital peripherals. The design is implemented in a 0.18 μ m CMOS technology and used a die area of 1.52 mm × 3.24 mm. The simulated maximum power consumption of the analog block is 592 μ W. The number of external components required by the SoC is limited to an external memory device, sensors, antenna and some passive components. The external memory device contains the application specific firmware. Based on the application, the firmware can be modified accordingly. The SoC design is suitable for medical implants to measure physiological parameters like temperature, pressure or ECG. As an application example, the authors have proposed a bioimplant to measure arterial blood pressure for patients suffering from Peripheral Artery Disease (PAD)

Calibration techniques in nyquist A/D converters

In modern systems signal processing is performed in the digital domain. Contrary to analog circuits, digital signal processing offers more robustness, programmability, error correction and storage possibility. The trend to shift the A/D converter towards the input of the system requires A/D converters with more dynamic range and higher sampling speeds. This puts extreme demands on the A/D converter and potentially increases the power consumption. Calibration Techniques in Nyquist A/D Converters analyses different A/D-converter architectures with an emphasis on the maximum achievable power efficiency. It is shown that in order to achieve high speed and high accuracy at high power efficiency, calibration is required. Calibration reduces the overall power consumption by using the available digital processing capability to relax the demands on critical power hungry analog components. Several calibration techniques are analyzed. The calibration techniques presented in this book are applicable to other analog-to-digital systems, such as those applied in integrated receivers. Further refinements will allow using analog components with less accuracy, which will then be compensated by digital signal processing. The presented methods allow implementing this without introducing a speed or power penalty

High Temperature Silicon Carbide Mixed-signal Circuits for Integrated Control and Data Acquisition

Wide bandgap semiconductor materials such as gallium nitride (GaN) and silicon carbide have grown in popularity as a substrate for power devices for high temperature and high voltage applications over the last two decades. Recent research has been focused on the design of integrated circuits for protection and control in these wide bandgap materials. The ICs developed in SiC and GaN can not only complement the power devices in high voltage and high frequency applications, but can also be used for standalone high temperature control and data acquisition circuitry. This dissertation work aims to explore the possibilities in high temperature and wide bandgap circuit design by developing a host of mixed-signal circuits that can be used for control and data acquisition. These include a family of current-mode signal processing circuits, general purpose amplifiers and comparators, and 8-bit data converters. The signal processing circuits along with amplifiers and comparators are then used to develop an integrated mixed-signal controller for a DC-DC flyback converter in a microinverter application. The 8-bit SAR ADC and the 8-bit R-2R ladder DAC open up the possibility of a remote data acquisition and control system in high temperature environments. The circuits and systems presented here offer a gateway to great opportunities in high temperature and power electronics ICs in SiC

Development of a 6-bit 15.625 MHz CMOS two-step flash analog-to-digital converter for a low dead time sub-nanosecond time measurement system

The development of a 6-bit 15.625 MHz CMOS two-step analog-to-digital converter (ADC) is presented. The ADC was developed for use in a low dead time, high-performance, sub-nanosecond time-to-digital converter (TDC). The TDC is part of a new custom CMOS application specific integrated circuit (ASIC) that will be incorporated in the next generation of front-end electronics for high-performance positron emission tomography imaging. The ADC is based upon a two-step flash architecture that reduces the comparator count by a factor-of-two when compared to a traditional flash ADC architecture and thus a significant reduction in area, power dissipation, and input capacitance of the converter is achieved. The converter contains time-interleaved auto-zeroed CMOS comparators. These comparators utilize offset correction in both the preamplifier and the subsequent regenerative latch stage to guarantee good integral and differential non-linearity performance of the converter over extreme process conditions. Also, digital error correction was employed to overcome most of the major metastability problems inherent in flash converters and to guarantee a completely monotonic transfer function. Corrected comparator offset measurements reveal that the CMOS comparator design maintains a worse case input-referred offset of less than 1 mV at conversion rates up to 8 MHz and less than a 2 mV offset at conversion rates as high as 16 MHz while dissipating less than 2.6 mW. Extensive laboratory measurements indicate that the ADC achieves differential and integral non-linearity performance of less than ±1/2 LSB with a 20 mV/LSB resolution. The ADC dissipates 90 mW from a single 5 V supply and occupies a die area of 1.97 mm x 1.13 mm in 0.8 μm CMOS technology