Area Efficient Design of Shift Register through Comparative Analysis of Latches and Flip-Flops

This work presents a energy and area-efficient shift register using pulsed latches. Energy consumption plays an important role in digital systems, because of the requirement to dissipate this energy in high-density circuits and the battery life need to be extended in portable systems such as devices with wireless communication capabilities. Flip-flops consume more energy in digital circuits. In flip flops timing problem occurs due to the redundancy, when the input and the output are in the same state. Several low-power techniques are available but all of them incur transistor-count penalties, leading to an increase in size. In this work the power and energy efficiency of several CMOS master–slave flip-flops and latches are designed and investigated. Among the flip-flops and latches compared, the proposed SSASPL (Static Sense Amplifier with Shared Pulse Generator) circuit is found to be the best energy and area efficient and this circuit is used to design a shift register. This method solves the timing problem through the use of multiple non-overlap delayed pulsed clock signals instead of single pulsed clock signal. The shift register designed by grouping the latches to several sub shift registers and using additional temporary storage latches but uses a small number of the pulsed clock signals. A 16-bit shift register using pulsed latches was fabricated using a 0.18 µm CMOS process with VDD = 1.8v. The proposed shift register saves 52% area and 44% power compared to the conventional shift register with flip-flops

Radiation Hardened by Design Methodologies for Soft-Error Mitigated Digital Architectures

abstract: Digital architectures for data encryption, processing, clock synthesis, data transfer, etc. are susceptible to radiation induced soft errors due to charge collection in complementary metal oxide semiconductor (CMOS) integrated circuits (ICs). Radiation hardening by design (RHBD) techniques such as double modular redundancy (DMR) and triple modular redundancy (TMR) are used for error detection and correction respectively in such architectures. Multiple node charge collection (MNCC) causes domain crossing errors (DCE) which can render the redundancy ineffectual. This dissertation describes techniques to ensure DCE mitigation with statistical confidence for various designs. Both sequential and combinatorial logic are separated using these custom and computer aided design (CAD) methodologies. Radiation vulnerability and design overhead are studied on VLSI sub-systems including an advanced encryption standard (AES) which is DCE mitigated using module level coarse separation on a 90-nm process with 99.999% DCE mitigation. A radiation hardened microprocessor (HERMES2) is implemented in both 90-nm and 55-nm technologies with an interleaved separation methodology with 99.99% DCE mitigation while achieving 4.9% increased cell density, 28.5 % reduced routing and 5.6% reduced power dissipation over the module fences implementation. A DMR register-file (RF) is implemented in 55 nm process and used in the HERMES2 microprocessor. The RF array custom design and the decoders APR designed are explored with a focus on design cycle time. Quality of results (QOR) is studied from power, performance, area and reliability (PPAR) perspective to ascertain the improvement over other design techniques. A radiation hardened all-digital multiplying pulsed digital delay line (DDL) is designed for double data rate (DDR2/3) applications for data eye centering during high speed off-chip data transfer. The effect of noise, radiation particle strikes and statistical variation on the designed DDL are studied in detail. The design achieves the best in class 22.4 ps peak-to-peak jitter, 100-850 MHz range at 14 pJ/cycle energy consumption. Vulnerability of the non-hardened design is characterized and portions of the redundant DDL are separated in custom and auto-place and route (APR). Thus, a range of designs for mission critical applications are implemented using methodologies proposed in this work and their potential PPAR benefits explored in detail.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

INVESTIGATING THE EFFECTS OF SINGLE-EVENT UPSETS IN STATIC AND DYNAMIC REGISTERS

Radiation-induced single-event upsets (SEUs) pose a serious threat to the reliability of registers. The existing SEU analyses for static CMOS registers focus on the circuit-level impact and may underestimate the pertinent SEU information provided through node analysis. This thesis proposes SEU node analysis to evaluate the sensitivity of static registers and apply the obtained node information to improve the robustness of the register through selective node hardening (SNH) technique. Unlike previous hardening techniques such as the Triple Modular Redundancy (TMR) and the Dual Interlocked Cell (DICE) latch, the SNH method does not introduce larger area overhead. Moreover, this thesis also explores the impact of SEUs in dynamic flip-flops, which are appealing for the design of high-performance microprocessors. Previous work either uses the approaches for static flip-flops to evaluate SEU effects in dynamic flip-flops or overlook the SEU injected during the precharge phase. In this thesis, possible SEU sensitive nodes in dynamic flip-flops are re-examined and their window of vulnerability (WOV) is extended. Simulation results for SEU analysis in non-hardened dynamic flip-flops reveal that the last 55.3 % of the precharge time and a 100% evaluation time are affected by SEUs

Design for testability of a latch-based design

Abstract. The purpose of this thesis was to decrease the area of digital logic in a power management integrated circuit (PMIC), by replacing selected flip-flops with latches. The thesis consists of a theory part, that provides background theory for the thesis, and a practical part, that presents a latch register design and design for testability (DFT) method for achieving an acceptable level of manufacturing fault coverage for it. The total area was decreased by replacing flip-flops of read-write and one-time programmable registers with latches. One set of negative level active primary latches were shared with all the positive level active latch registers in the same register bank. Clock gating was used to select which latch register the write data was loaded to from the primary latches. The latches were made transparent during the shift operation of partial scan testing. The observability of the latch register clock gating logic was improved by leaving the first bit of each latch register as a flip-flop. The controllability was improved by inserting control points. The latch register design, developed in this thesis, resulted in a total area decrease of 5% and a register bank area decrease of 15% compared to a flip-flop-based reference design. The latch register design manages to maintain the same stuck-at fault coverage as the reference design.Salpaperäisen piirin testattavuuden suunnittelu. Tiivistelmä. Tämän opinnäytetyön tarkoituksena oli pienentää digitaalisen logiikan pinta-alaa integroidussa tehonhallintapiirissä, korvaamalla valitut kiikut salpapiireillä. Opinnäytetyö koostuu teoriaosasta, joka antaa taustatietoa opinnäytetyölle, ja käytännön osuudesta, jossa esitellään salparekisteripiiri ja testattavuussuunnittelun menetelmä, jolla saavutettiin riittävän hyvä virhekattavuus salparekisteripiirille. Kokonaispinta-alaa pienennettiin korvaamalla luku-kirjoitusrekistereiden ja kerran ohjelmoitavien rekistereiden kiikut salpapiireillä. Yhdet negatiivisella tasolla aktiiviset isäntä-salpapiirit jaettiin kaikkien samassa rekisteripankissa olevien positiivisella tasolla aktiivisten salparekistereiden kanssa. Kellon portittamisella valittiin mihin salparekisteriin kirjoitusdata ladattiin yhteisistä isäntä-salpapireistä. Osittaisessa testipolkuihin perustuvassa testauksessa salpapiirit tehtiin läpinäkyviksi siirtooperaation aikana. Salparekisterin kellon portituslogiikan havaittavuutta parannettiin jättämällä jokaisen salparekisterin ensimmäinen bitti kiikuksi. Ohjattavuutta parannettiin lisäämällä ohjauspisteitä. Salparekisteripiiri, joka suunniteltiin tässä diplomityössä, pienensi kokonaispinta-alaa 5 % ja rekisteripankin pinta-alaa 15 % verrattuna kiikkuperäiseen vertailupiiriin. Salparekisteripiiri onnistuu pitämään saman juuttumisvikamallin virhekattavuuden kuin vertailupiiri

Microprocessor energy characterization and optimization through fast, accurate, and flexible simulation

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001.This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.Includes bibliographical references (p. 99-102).Energy dissipation is emerging as a key constraint for both high-performance and embedded microprocessor designs, requiring computer architects to consider energy in addition to performance when evaluating design decisions. A major limitation is the general difficulty in analyzing the energy impact of architectural and microarchitectural features without constructing detailed implementations and running slow simulations. This thesis first describes the design of a fast, accurate, and flexible circuit simulation tool which enables transition-sensitive studies of microprocessor energy consumption that would otherwise be impossible or impractical. With a simulation infrastructure in place, various optimizations are implemented that target the entire datapath and cache energy consumption. The individual energy optimizations are analyzed in detail, and the microprocessor design is characterized using various energy breakdowns and studies of the bit correlation between data values. This work shows that a few relatively simple energy-saving techniques can have a large impact in the implementation of an energy-efficient microprocessor. By fully characterizing the energy usage, this thesis establishes a coherent vision of microprocessor energy consumption, and serves as a basis and motivation for further energy optimizations.by Ronny Krashinsky.S.M

Design of a process monitor and of peripheral circuits enabling the characterisation of CMOS 45nm Ultra Low Power and Litho Friendly optimised standard cells

L’evoluzione della tecnologia CMOS è caratterizzata dallo scaling delle dimensioni dei dispositivi e dalla riduzione del consumo di potenza. Dal momento che le difficoltà di realizzazione aumentano al diminuire delle dimensioni, nei nodi tecnologici più recenti la velocità del processo di scaling sta diminuendo. Uno dei maggiori problemi causati dalla riduzione delle dimensioni dei dispositivi è la variabilità del processo di fabbricazione. L’obiettivo di questo progetto è quello di ridurre gli effetti che la variabilità del processo di realizzazione nel nodo tecnologico CMOS 45 nm ha sulle prestazioni della logica digitale, grazie a metodi di design non convenzionali. In questo progetto è stato realizzato un testchip per studiare e quantificare i vantaggi, in termini di prestazioni, ottenuti tramite la progettazione di librerie standard-like ottimizzate secondo canoni di litho-friendliness (LF) e ultra low power (ULP). Le standard cells LF utilizzano layout estremamente regolari. Le standard cells ULP sono progettate per operare con tensioni di alimentazioni notevolmente ridotte. Il fine principale del testchip sta nell’ottenere una panoramica della variabilità locale e globale di parametri significativi nella progettazione digitale: ad esempio la frequenza di lavoro e il consumo di potenza. Inoltre, nel testchip sono stati realizzati alcuni circuiti originali per il monitoraggio della qualità del processo di fabbricazione. The evolution of the CMOS technology is characterized by the scaling of transistors size and by the reduction of their power dissipation. In the last technology nodes the speed of the scaling process is decreasing, since the complexity of the technology increases with its size reduction. One of the main issues caused by the shrinking of the transistor size is the variability of the fabrication process. The target of this project is to reduce the effects of the variability of the realisation process in a CMOS 45 nm technology node in digital circuits performances, using unconventional design methods. A testchip is realised in this project to investigate and to quantify the improvement of the circuit performances obtained through the design of dedicated litho-friendly (LF) and of the Ultra Low Power (ULP) standard-like libraries. The LF standard cells libraries are optimised for lithography using ultra regular layout styles. The ULP standard cells library is optimised to operate at extremely low supply voltage. The main aim of the testchip is to get insight into the local and the global variability of relevant parameters for digital design, such as operating frequency and power consumption. In this testchip some structures are also included, to develop some innovative circuits that should help to monitor the quality of the technology process

Robust low-power digital circuit design in nano-CMOS technologies

Device scaling has resulted in large scale integrated, high performance, low-power, and low cost systems. However the move towards sub-100 nm technology nodes has increased variability in device characteristics due to large process variations. Variability has severe implications on digital circuit design by causing timing uncertainties in combinational circuits, degrading yield and reliability of memory elements, and increasing power density due to slow scaling of supply voltage. Conventional design methods add large pessimistic safety margins to mitigate increased variability, however, they incur large power and performance loss as the combination of worst cases occurs very rarely. In-situ monitoring of timing failures provides an opportunity to dynamically tune safety margins in proportion to on-chip variability that can significantly minimize power and performance losses. We demonstrated by simulations two delay sensor designs to detect timing failures in advance that can be coupled with different compensation techniques such as voltage scaling, body biasing, or frequency scaling to avoid actual timing failures. Our simulation results using 45 nm and 32 nm technology BSIM4 models indicate significant reduction in total power consumption under temperature and statistical variations. Future work involves using dual sensing to avoid useless voltage scaling that incurs a speed loss. SRAM cache is the first victim of increased process variations that requires handcrafted design to meet area, power, and performance requirements. We have proposed novel 6 transistors (6T), 7 transistors (7T), and 8 transistors (8T)-SRAM cells that enable variability tolerant and low-power SRAM cache designs. Increased sense-amplifier offset voltage due to device mismatch arising from high variability increases delay and power consumption of SRAM design. We have proposed two novel design techniques to reduce offset voltage dependent delays providing a high speed low-power SRAM design. Increasing leakage currents in nano-CMOS technologies pose a major challenge to a low-power reliable design. We have investigated novel segmented supply voltage architecture to reduce leakage power of the SRAM caches since they occupy bulk of the total chip area and power. Future work involves developing leakage reduction methods for the combination logic designs including SRAM peripherals

Digital design techniques for dependable High-Performance Computing

L'abstract è presente nell'allegato / the abstract is in the attachmen

Heavy ion induced Single Event Phenomena (SEP) data for semiconductor devices from engineering testing

The accumulation of JPL data on Single Event Phenomena (SEP), from 1979 to August 1986, is presented in full report format. It is expected that every two years a supplement report will be issued for the follow-on period. This data for 135 devices expands on the abbreviated test data presented as part of Refs. (1) and (3) by including figures of Single Event Upset (SEU) cross sections as a function of beam Linear Energy Transfer (LET) when available. It also includes some of the data complied in the JPL computer in RADATA and the SPACERAD data bank. This volume encompasses bipolar and MOS (CMOS and MHNOS) device data as two broad categories for both upsets (bit-flips) and latchup. It also includes comments on less well known phenomena, such as transient upsets and permanent damage modes