Forward Body Biased Low Power 4.0-10.6 GHz Wideband Low Noise Amplifier

A forward body biased low power Low Noise Amplifier (LNA) is designed using Common Gate (CG) topology. By using current reuse technique between the first stage and second stage Common Source topology accompanied with forward body biasing leads to low power dissipation. A series to parallel tank circuit at this stage leads to wideband design. A shunt peaking inductor at the drain terminal of second stage causes the higher frequency peak to increase leading to wide bandwidth. Two CS cascade stages are used to increase the overall gain of the proposed LNA with a buffer stage at the output for output matching. The proposed LNA attained maximum gain of 26.39 dB with a gain greater than 16 dB over entire range. The circuit gives reflection coefficient less than – 10 dB with NF 2.7 dB. With Vdd of 0.925 V, a DC current of 8.32 mA is consumed giving 7.7 mW power consumption

Design, Fault Modeling and Testing Of a Fully Integrated Low Noise Amplifier (LNA) in 45 nm CMOS Technology for Inter and Intra-Chip Wireless Interconnects

Research in recent years has demonstrated that intra and inter-chip wireless interconnects are capable of establishing energy-efficient data communications within as well as between multiple chips. This thesis introduces a circuit level design of a source degenerated two stage common source low noise amplifier suitable for such wireless interconnects in 45-nm CMOS process. The design consists of a simple two-stage common source structure based Low Noise Amplifier (LNA) to boost the degraded received signal. Operating at 60GHz, the proposed low noise amplifier consumes only 4.88 mW active power from a 1V supply while providing 17.2 dB of maximum gain at 60 GHz operating frequency at very low noise figure of 2.8 dB, which translates to a figure of merit of 16.1 GHz and IIP3 as -14.38 dBm

Design of broadband inductor-less RF front-ends with high dynamic range for G.hn

System-on-Chip (SoC) was adopted in recent years as one of the solutions to reduce the cost of integrated systems. When the SoC solution started to be used, the final product was actually more expensive due to lower yield. The developments in integrated technology through the years allowed the integration of more components in lesser area with a better yield. Thus, SoCs became a widely used solution to reduced the cost of the final product, integrating into a single-chip the main parts of a system: analog, digital and memory. As integrated technology kept scaling down to allow a higher density of transistors and thus providing more functionality with the same die area, the analog RF parts of the SoC became a bottleneck to cost reduction as inductors occupy a large die area and do not scale down with technology. Hence, the trend moves toward the research and design of inductor-less SoCs that further reduce the cost of the final solution. Also, as the demand for home networking high-data-rates communication systems has increased over the last decade, several standards have been developed to satisfy the requirements of each application, the most popular being wireless local area networks (WLANs) based on the IEEE 802.11 standard. However, poor signal propagation across walls make WLANs unsuitable for high-speed applications such as high-definition in-home video streaming, leading to the development of wired technologies using the existing in-home infrastructure. The ITU-T G.hn recommendation (G.9960 and G.9961) unifies the most widely used wired infrastructures at home (coaxial cables, phone lines and power lines) into a single standard for high-speed data transmission of up to 1 Gb/s. The G.hn recommendation defines a unified networking over power lines, phone lines and coaxial cables with different plans for baseband and RF. The RF-coax bandplan, where this thesis is focused, uses 50 MHz and 100 MHz bandwidth channels with 256 and 512 carriers respectively. The center frequency can range from 350 MHz to 2450 MHz. The recommendation specifies a transmission power limit of 5 dBm for the 50 MHz bandplan and 8~dBm for the 100 MHz bandplan, therefore the maximum transmitted power in each carrier is the same for both bandplans. Due to the nature of an in-home wired environment, receivers that can handle both very large and very small amplitude signals are required; when transmitter and receiver are connected on the same electric outlet there is no channel attenuation and the signal-to-noise-plus-distortion ratio (SNDR) is dominated by the receiver linearity, whereas when transmitter and receiver are several rooms apart channel attenuation is high and the SNDR is dominated by the receiver noise figure. The high dynamic range specifications for these receivers require the use of configurable-gain topologies that can provide both high-linearity and low-noise for different configurations. Thus, this thesis has been aimed at researching high dynamic range broadband inductor-less topologies to be used as the RF front-end for a G.hn receiver complying with the provided specifications. A large part of the thesis has been focused on the design of the input amplifier of the front-end, which is the most critical stage as the noise figure and linearity of the input amplifier define the achievable overall specifications of the whole front-end. Three prototypes has been manufactured using a 65 nm CMOS process: two input RFPGAs and one front-end using the second RFPGA prototype.El "sistema en un chip" (SoC) fue adoptado recientemente como una de las soluciones para reducir el coste de sistemas integrados. Cuando se empezó a utilizar la solución SoC, el producto final era más caro debido al bajo rendimiento de producción. Los avances en tecnología integrada a lo largo de los años han permitido la integración de más componentes en menos área con mejoras en rendimiento. Por lo tanto, SoCs pasó a ser una solución ampliamente utilizada para reducir el coste del producto final, integrando en un único chip las principales partes de un sistema: analógica, digital y memoria. A medida que las tecnologías integradas se reducían en tamaño para permitir una mayor densisdad de transistores y proveer mayor funcionalidad con la misma área, las partes RF analógicas del SoC pasaron a ser la limitación en la reducción de costes ya que los inductores ocupan mucha área y no escalan con la tecnología. Por lo tanto, las tendencias en investigación se mueven hacia el diseño de SoCs sin inductores que todavía reducen más el coste final del producto. También, a medida que la demanda en sistemas de comunicación domésticos de alta velocidad ha crecido a lo largo de la última década, se han desarrollado varios estándares para satisfacer los requisitos de cada aplicación, siendo las redes sin hilos (WLANs) basadas en el estándar IEEE 802.11 las más populares. Sin embargo, una pobre propagación de señal a través de las paredes hacen que las WLANs sean inadecuadas para aplicaciones de alta-velocidad como transmisión de vídeo de alta definición en tiempo real, resultando en el desarrollo de tecnologías con hilos utilizando la infraestructura existente en los domicilios. La recomendación ITU-T G.hn (G.9960 and G.9961) unifica las principales infraestructuras con hilos domésticas (cables coaxiales, línias de teléfono y línias de electricidad) en un sólo estándar para la transmisión de datos hasta 1 Gb/s. La recomendación G.hn define una red unificada sobre línias de electricidad, de teléfono y coaxiales con diferentes esquemas para banda base y RF. El esquema RF-coax en el cual se basa esta tesis, usa canales con un ancho de banda de 50 MHz y 100 MHz con 256 y 512 portadoras respectivamente. La frecuencia centra puede variar desde 350 MHz hasta 2450 MHz. La recomendación especifica un límite en la potencia de transmisión de 5 dBm para el esquema de 50 MHz y 8 dBm para el esquema de 100 MHz, de tal forma que la potencia máxima por portadora es la misma en ambos esquemas. Debido a la estructura de un entorno doméstico con hilos, los receptores deben ser capaces de procesar señales con amplitud muy grande o muy pequeña; cuando transmisor y receptor están conectados en la misma toma eléctrica no hay atenuación de canal y el ratio de señal a rudio más distorsión (SNDR) está dominado por la linealidad del receptor, mientras que cuando transmisor y receptor están separados por varias habitaciones la atenuación es elevada y el SNDR está dominado por la figura de ruido del receptor. Los elevados requisitos de rango dinámico para este tipo de receptores requieren el uso de topologías de ganancia configurable que pueden proporcionar tanto alta linealidad como bajo ruido para diferentes configuraciones. Por lo tanto, esta tesis está encarada a la investigación de topologías sin inductores de banda ancha y elevado rango dinámico para ser usadas a la entrada de un receptor G.hn cumpliendo con las especificaciones proporcionadas. Una gran parte de la tesis se ha centrado en el diseño del amplificador de entrada al ser la etapa más crítica, ya que la figura de ruido y linealidad del amplificador de entrada definen lás máximas especificaciones que el sistema puede conseguir. Se han fabricado 3 prototipos con un proceso CMOS de 65 nm: 2 amplificadores y un sistema completo con amplificador y mezclador.Postprint (published version

Low Noise Amplifier using Darlington Pair At 90nm Technology

The demand of low noise amplifier (LNA) has been rising in today’s communication system. LNA is the basic building circuit of the receiver section satellite. The design concept demonstrates the design trade off with NF, gain, power consumption. This paper reports on with analysis of wideband LNA. This paper shows the schematic of LNA by using Darlington pair amplifier. This LNA has been fabricated on 90nm CMOS process. This paper is focused on to make comparison of three stage and single stage LNA. Here, the phase mismatch between these patameters is quantitavely analyzed to study the effect on gain and noise figure (NF). In this paper, single stage LNA has shown the 23 dB measured gain, while the three stages LNA has demonstrated 29 dB measured gain. Here, LNA designed using darlington pair shows low NF of 3.3-4.8 dB, which comparable to other reported single stage LNA designs and appreciably low compared to the three stages LNA. Hence, findings from this paper suggest the use of single stage LNA designed using Darlington pair in transceiver satellite applications

Configurable circuits and their impact on multi-standard RF front-end architectures

This thesis studies configurable circuits and their impact on multi-standard RF front-end architectures. In particular, low-voltage low-power linear LNA and mixer topologies suitable for implementation in multi-standard front-ends are subject of the investigation. With respect to frequency and bandwidth, multi-standard front-ends can be implemented using either tunable or wideband LNA and mixer topologies. Based on the type of the LNA and mixer(s), multi-standard receiver RF front-ends can be divided into three groups. They can be (tunable) narrow-band, wide-band or combined. The advantages and disadvantages of the different multi-standard receiver RF front-ends have been discussed in detail. The partitioning between off-chip selectivity, on-chip selectivity provided by the LNA and mixer, linearity, power consumption and occupied chip area in each multi-standard RF front-end group are thoroughly investigated. A Figure of Merit (FOM) for the multi-standard receiver RF front-end has been introduced. Based on this FOM the most suitable multi-standard RF front-end group in terms of cost-effectiveness can be selected. In order to determine which multi-standard RF front-end group is the most cost-effective for a practical application, a GSM850/E-GSM/DCS/PCS/Bluetooth/WLANa/b/g multi-standard receiver RF front-end is chosen as a demonstrator. These standards are the most frequently used standards in wireless communication, and this combination of standards allows to users almost "anytime-anywhere" voice and data transfer. In order to verify these results, three demonstrators have been defined, designed and implemented, two wideband RF front-end circuits in 90nm CMOS and 65nm CMOS, and one combined multi-standard RF front-end circuit in 65nm CMOS. The proposed multi-standard demonstrators have been compared with the state-of the art narrow-band, wide-band and combined multi-standard RF front-ends. On the proposed multi-standard RF front-ends and the state-of the art multi-standard RF front-ends the proposed FOM have been applied. The comparison shows that the combined multi-standard RF front-end group is the most cost effective multi-standard group for this application

HIGH LINEARITY UNIVERSAL LNA DESIGNS FOR NEXT GENERATION WIRELESS APPLICATIONS

Design of the next generation (4G) systems is one of the most active and important area of research and development in wireless communications. The 2G and 3G technologies will still co-exist with the 4G for a certain period of time. Other applications such as wireless LAN (Local Area Network) and RFID are also widely used. As a result, there emerges a trend towards integrating multiple wireless functionalities into a single mobile device. Low noise amplifier (LNA), the most critical component of the receiver front-end, determines the sensitivity and noise figure of the receiver and is indispensable for the complete system. To satisfy the need for higher performance and diversity of wireless communication systems, three LNAs with different structures and techniques are proposed in the thesis based on the 4G applications. The first LNA is designed and optimized specifically for LTE applications, which could be easily added to the existing system to support different standards. In this cascode LNA, the nonlinearity coming from the common source (CS) and common gate (CG) stages are analyzed in detail, and a novel linear structure is proposed to enhance the linearity in a relatively wide bandwidth. The LNA has a bandwidth of 900MHz with the linearity of greater than 7.5dBm at the central frequency of 1.2GHz. Testing results show that the proposed structure effectively increases and maintains linearity of the LNA in a wide bandwidth. However, a broadband LNA that covers multiple frequency ranges appears more attractive due to system simplicity and low cost. The second design, a wideband LNA, is proposed to cover multiple wireless standards, such as LTE, RFID, GSM, and CDMA. A novel input-matching network is proposed to relax the tradeoff among noise figure and bandwidth. A high gain (>10dB) in a wide frequency range (1-3GHz) and a minimum NF of 2.5dB are achieved. The LNA consumes only 7mW on a 1.2V supply. The first and second LNAs are designed mainly for the LTE standard because it is the most widely used standard in the 4G communication systems. However, WiMAX, another 4G standard, is also being widely used in many applications. The third design targets on covering both the LTE and the WiMAX. An improved noise cancelling technique with gain enhancing structure is proposed in this design and the bandwidth is enlarged to 8GHz. In this frequency range, a maximum power gain of 14.5dB and a NF of 2.6-4.3dB are achieved. The core area of this LNA is 0.46x0.67mm2 and it consumes 17mW from a 1.2V supply. The three designs in the thesis work are proposed for the multi-standard applications based on the realization of the 4G technologies. The performance tradeoff among noise, linearity, and broadband impedance matching are explored and three new techniques are proposed for the tradeoff relaxation. The measurement results indicate the techniques effectively extend the bandwidth and suppress the increase of the NF and nonlinearity at high frequencies. The three proposed structures can be easily applied to the wideband and multi-standard LNA design

HIGH PERFORMANCE CMOS WIDE-BAND RF FRONT-END WITH SUBTHRESHOLD OUT OF BAND SENSING

In future, the radar/satellite wireless communication devices must support multiple standards and should be designed in the form of system-on-chip (SoC) so that a significant reduction happen on cost, area, pins, and power etc. However, in such device, the design of a fully on-chip CMOS wideband receiver front-end that can process several radar/satellite signal simultaneously becomes a multifold complex problem. Further, the inherent high-power out-of-band (OB) blockers in radio spectrum will make the receiver more non-linear, even sometimes saturate the receiver. Therefore, the proper blocker rejection techniques need to be incorporated. The primary focus of this research work is the development of a CMOS high-performance low noise wideband receiver architecture with a subthreshold out of band sensing receiver. Further, the various reconfigurable mixer architectures are proposed for performance adaptability of a wideband receiver for incoming standards. Firstly, a high-performance low- noise bandwidthenhanced fully differential receiver is proposed. The receiver composed of a composite transistor pair noise canceled low noise amplifier (LNA), multi-gate-transistor (MGTR) trans-conductor amplifier, and passive switching quad followed by Tow Thomas bi-quad second order filter based tarns-impedance amplifier. An inductive degenerative technique with low-VT CMOS architecture in LNA helps to improve the bandwidth and noise figure of the receiver. The full receiver system is designed in UMC 65nm CMOS technology and measured. The packaged LNA provides a power gain 12dB (including buffer) with a 3dB bandwidth of 0.3G – 3G, noise figure of 1.8 dB having a power consumption of 18.75mW with an active area of 1.2mm*1mm. The measured receiver shows 37dB gain at 5MHz IF frequency with 1.85dB noise figure and IIP3 of +6dBm, occupies 2mm*1.2mm area with 44.5mW of power consumption. Secondly, a 3GHz-5GHz auxiliary subthreshold receiver is proposed to estimate the out of blocker power. As a redundant block in the system, the cost and power minimization of the auxiliary receiver are achieved via subthreshold circuit design techniques and implementing the design in higher technology node (180nm CMOS). The packaged auxiliary receiver gives a voltage gain of 20dB gain, the noise figure of 8.9dB noise figure, IIP3 of -10dBm and 2G-5GHz bandwidth with 3.02mW power consumption. As per the knowledge, the measured results of proposed main-high-performancereceiver and auxiliary-subthreshold-receiver are best in state of art design. Finally, the various viii reconfigurable mixers architectures are proposed to reconfigure the main-receiver performance according to the requirement of the selected communication standard. The down conversion mixers configurability are in the form of active/passive and Input (RF) and output (IF) bandwidth reconfigurability. All designs are simulated in 65nm CMOS technology. To validate the concept, the active/ passive reconfigurable mixer configuration is fabricated and measured. Measured result shows a conversion gain of 29.2 dB and 25.5 dB, noise figure of 7.7 dB and 10.2 dB, IIP3 of -11.9 dBm and 6.5 dBm in active and passive mode respectively. It consumes a power 9.24mW and 9.36mW in passive and active case with a bandwidth of 1 to 5.5 GHz and 0.5 to 5.1 GHz for active/passive case respectively